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Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Authors:
Maciej Jaworski,
Paweł Mrowiński,
Marek Burakowski,
Paweł Holewa,
Laura Zeidler,
Marcin Syperek,
Elizaveta Semenova,
Grzegorz Sęk
Abstract:
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon…
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Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D sha** of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.
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Submitted 7 June, 2024;
originally announced June 2024.
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Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Authors:
Marek Burakowski,
Paweł Holewa,
Aurimas Sakanas,
Anna Musiał,
Grzegorz Sęk,
Paweł Mrowiński,
Kresten Yvind,
Elizaveta Semenova,
Marcin Syperek
Abstract:
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate th…
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Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
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Submitted 23 November, 2023;
originally announced November 2023.
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High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Authors:
Paweł Holewa,
Daniel A. Vajner,
Emilia Zięba-Ostój,
Maja Wasiluk,
Benedek Gaál,
Aurimas Sakanas,
Marek Burakowski,
Paweł Mrowiński,
Bartosz Krajnik,
Meng Xiong,
Kresten Yvind,
Niels Gregersen,
Anna Musiał,
Alexander Huck,
Tobias Heindel,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic…
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Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
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Submitted 23 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.
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Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
Authors:
Yury Berdnikov,
Pawel Holewa,
Shima Kadkhodazadeh,
Jan Mikolaj Smigiel,
Adrianna Frackowiak,
Aurimas Sakanas,
Kresten Yvind,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailo…
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Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.
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Submitted 26 January, 2023;
originally announced January 2023.
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Optimization of heterogeneously integrated InP-Si on-chip photonic components
Authors:
P. Mrowiński,
P. Holewa,
A. Sakanas,
G. Sęk,
E. Semenova,
M. Syperek
Abstract:
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-b…
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We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using the existing semiconductor processing technologies. Our numerical studies reveal nearly 86% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field modes along a tapered geometry. The coupling efficiency of a dipole emitting to the hybrid InP/Si waveguide is evaluated to ~60%, which results in more than 50% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plain outcoupling configurations. In the former case, the outcoupling amounts to ~26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 10%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 μm spectral range.
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Submitted 28 November, 2022; v1 submitted 31 August, 2022;
originally announced August 2022.
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Crossover from exciton-polariton condensation to photon lasing in an optical trap
Authors:
Maciej Pieczarka,
Dąbrówka Biegańska,
Christian Schneider,
Sven Höfling,
Sebastian Klembt,
Grzegorz Sęk,
Marcin Syperek
Abstract:
Optical trap** has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pum** laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation scheme. Here, we compare two experimental methods on…
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Optical trap** has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pum** laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation scheme. Here, we compare two experimental methods on a sample, where a single spot excitation experiment allowed only to observe photonic lasing in the weak coupling regime. In contrast, the ring-shaped excitation resulted in the two-threshold behavior, where an exciton-polariton condensate manifests itself at the first and photon lasing at the second threshold. Both lasing regimes are trapped in an optical potential created by the pump. We interpret the origin of this confining potential in terms of repulsive interactions of polaritons with the reservoir at the first threshold and as a result of the excessive free-carrier induced refractive index change of the microcavity at the second threshold. This observation offers a way to achieve multiple phases of photonic condensates in samples, e.g., containing novel materials as an active layer, where two-threshold behavior is impossible to achieve with a single excitation spot.
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Submitted 8 August, 2023; v1 submitted 10 December, 2021;
originally announced December 2021.
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Observation of gain-pinned dissipative solitons in a microcavity laser
Authors:
Maciej Pieczarka,
Dario Poletti,
Christian Schneider,
Sven Höfling,
Elena A. Ostrovskaya,
Grzegorz Sęk,
Marcin Syperek
Abstract:
We demonstrate an experimental approach to create dissipative solitons in a microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localised structures, called gain-pinned dissipative solitons that exist due to the balance of gain and nonlinear losses and are confined to a diffract…
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We demonstrate an experimental approach to create dissipative solitons in a microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localised structures, called gain-pinned dissipative solitons that exist due to the balance of gain and nonlinear losses and are confined to a diffraction-limited volume. The ultrafast formation dynamics and decay of the gain-pinned solitons are probed directly, showing that they are created on a picosecond timescale, orders of magnitude faster than laser cavity solitons. All of the experimentally observed features and dynamics are reconstructed by using a standard complex Ginzburg-Landau model.
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Submitted 1 April, 2020; v1 submitted 21 May, 2019;
originally announced May 2019.
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Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
Authors:
M. Syperek,
Ł. Dusanowski,
M. Gawełczyk,
G. Sęk,
A. Somers,
J. P. Reithmaier,
S. Höfling,
J. Misiewicz
Abstract:
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum**…
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Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum** conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pum** scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.
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Submitted 24 July, 2018;
originally announced July 2018.
