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All-optical modulation with single-photons using electron avalanche
Authors:
Demid V. Sychev,
Peigang Chen,
Morris Yang,
Colton Fruhling,
Alexei Lagutchev,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
The distinctive characteristics of light such as high-speed propagation, low-loss, low cross-talk and power consumption as well as quantum properties, make it uniquely suitable for various critical applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor though is the weak optical nonlinearity of conventional medi…
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The distinctive characteristics of light such as high-speed propagation, low-loss, low cross-talk and power consumption as well as quantum properties, make it uniquely suitable for various critical applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor though is the weak optical nonlinearity of conventional media that poses challenges for the control and manipulation of light, especially with ultra-low, few-photon-level intensities. Notably, creating a photonic transistor working at single-photon intensities remains an outstanding challenge. In this work, we demonstrate all-optical modulation using a beam with single-photon intensity. Such low-energy control is enabled by the electron avalanche process in a semiconductor triggered by the impact ionization of charge carriers. This corresponds to achieving a nonlinear refractive index of n2~7*10^-3m^2/W, which is two orders of magnitude higher than in the best nonlinear optical media (Table S1). Our approach opens up the possibility of terahertz-speed optical switching at the single-photon level, which could enable novel photonic devices and future quantum photonic information processing and computing, fast logic gates, and beyond. Importantly, this approach could lead to industry-ready CMOS-compatible and chip-integrated optical modulation platforms operating with single photons.
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Submitted 18 December, 2023;
originally announced December 2023.
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Plasmonic Enhancement of Second Harmonic Generation in Weyl Semimetal TaAs
Authors:
Morris M. Yang,
Mustafa Ozlu,
Samuel Peana,
Vahagn Mkhitaryan,
Demid Sychev,
Xiaohui Xu,
Zachariah M. Martin,
Hasitha Suriya Arachchige,
Alexei Lagoutchev,
David Mandurus,
Vladimir Shalaev,
Alexandra Boltasseva
Abstract:
In this work a hybrid nanoplasmonic-Weyl Semimetal (WSM) structure is realized for the first time utilizing silver nanopatch antennas and WSM Tantalum Arsenide (TaAs). The studied hybrid WSM-nanoplasmonic structure demonstrated a substantial, over x4.5 enhancement of the second harmonic generation (SHG) process compared to a bare TaAs film. To realize the hybrid structure while preserving TaAs pro…
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In this work a hybrid nanoplasmonic-Weyl Semimetal (WSM) structure is realized for the first time utilizing silver nanopatch antennas and WSM Tantalum Arsenide (TaAs). The studied hybrid WSM-nanoplasmonic structure demonstrated a substantial, over x4.5 enhancement of the second harmonic generation (SHG) process compared to a bare TaAs film. To realize the hybrid structure while preserving TaAs properties, a scalable, non-destructive manufacturing approach was developed that involves the fabrication of TaAs flakes from single crystalline TaAs, overgrowth of a silicon nitride overlayer, and drop-casting of silver nanopatch antennas. The strong polarization response of both the bare flakes, along with the hybrid-nanoplasmonic cavities demonstrates that this approach uniquely preserves the TaAs crystal structure and its optical response while providing significant enhancement of the nonlinear properties. The developed method allows leveraging the capabilities of plasmonics to control and enhance light-matter interactions at the nanometer scale to access and engineer WSM response. This work is the first step towards high-performance nanophotonic devices utilizing WSM topological properties.
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Submitted 20 July, 2023;
originally announced July 2023.
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Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity
Authors:
Xiaohui Xu,
Abhishek. B. Solanki,
Demid Sychev,
Xingyu Gao,
Samuel Peana,
Aleksandr S. Baburin,
Karthik Pagadala,
Zachariah O. Martin,
Sarah N. Chowdhury,
Yong P. Chen,
Ilya A. Rodionov,
Alexander V. Kildishev,
Tongcang Li,
Pramey Upadhyaya,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves…
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Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects.
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Submitted 17 July, 2022;
originally announced July 2022.
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Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics
Authors:
Alexander Senichev,
Samuel Peana,
Zachariah O. Martin,
Omer Yesilyurt,
Demid Sychev,
Alexei S. Lagutchev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the sing…
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The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters.
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Submitted 17 May, 2022;
originally announced May 2022.
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Machine learning assisted quantum super-resolution microscopy
Authors:
Zhaxylyk A. Kudyshev,
Demid Sychev,
Zachariah Martin,
Simeon I. Bogdanov,
Xiaohui Xu,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
One of the main characteristics of optical imaging systems is the spatial resolution, which is restricted by the diffraction limit to approximately half the wavelength of the incident light. Along with the recently developed classical super-resolution techniques, which aim at breaking the diffraction limit in classical systems, there is a class of quantum super-resolution techniques which leverage…
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One of the main characteristics of optical imaging systems is the spatial resolution, which is restricted by the diffraction limit to approximately half the wavelength of the incident light. Along with the recently developed classical super-resolution techniques, which aim at breaking the diffraction limit in classical systems, there is a class of quantum super-resolution techniques which leverage the non-classical nature of the optical signals radiated by quantum emitters, the so-called antibunching super-resolution microscopy. This approach can ensure a factor of $\sqrt{n}$ improvement in the spatial resolution by measuring the n-th order autocorrelation function. The main bottleneck of the antibunching super-resolution microscopy is the time-consuming acquisition of multi-photon event histograms. We present a machine learning-assisted approach for the realization of rapid antibunching super-resolution imaging and demonstrate 12 times speed-up compared to conventional, fitting-based autocorrelation measurements. The developed framework paves the way to the practical realization of scalable quantum super-resolution imaging devices that can be compatible with various types of quantum emitters.
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Submitted 7 July, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
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Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates
Authors:
Xiaohui Xu,
Zachariah O. Martin,
Demid Sychev,
Alexei S. Lagutchev,
Yong Chen,
Takashi Taniguchi,
Kenji Watanabe,
Vladimir M. Shalaev,
Alexandra Boltasseva
Abstract:
Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, the…
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Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, they either rely on a substrate nanopatterning procedure that is not compatible with integrated photonic devices or utilize a radiation source that might cause unpredictable damage to hBN and underlying substrates. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip. The method is applied to thin hBN flakes (less than 25 nm in thickness) on flat silicon-dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPEs yields are above 30% by utilizing multiple indent sizes, and a maximum yield of 36% is demonstrated for the indent size of around 400 nm. Our results mark an important step towards the deterministic creation and integration of hBN SPEs with photonic and plasmonic on-chip devices.
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Submitted 28 June, 2021;
originally announced June 2021.
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Room temperature single-photon emitters in silicon nitride
Authors:
Alexander Senichev,
Zachariah O. Martin,
Samuel Peana,
Demid Sychev,
Xiaohui Xu,
Alexei S. Lagutchev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observat…
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Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform.
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Submitted 16 April, 2021;
originally announced April 2021.
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Entanglement of macroscopically distinct states of light
Authors:
Demid V. Sychev,
Valeriy A. Novikov,
Khurram K. Pirov,
Christoph Simon,
A. I. Lvovsky
Abstract:
Schrödinger's famous Gedankenexperiment has inspired multiple generations of physicists to think about apparent paradoxes that arise when the logic of quantum physics is applied to macroscopic objects. The development of quantum technologies enabled us to produce physical analogues of Schrödinger's cats, such as superpositions of macroscopically distinct states as well as entangled states of micro…
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Schrödinger's famous Gedankenexperiment has inspired multiple generations of physicists to think about apparent paradoxes that arise when the logic of quantum physics is applied to macroscopic objects. The development of quantum technologies enabled us to produce physical analogues of Schrödinger's cats, such as superpositions of macroscopically distinct states as well as entangled states of microscopic and macroscopic entities. Here we take one step further and prepare an optical state which, in Schrödinger's language, is equivalent to a superposition of two cats, one of which is dead and the other alive, but it is not known in which state each individual cat is. Specifically, the alive and dead states are, respectively, the displaced single photon and displaced vacuum (coherent state), with the magnitude of displacement being on a scale of $10^8$ photons. These two states have significantly different photon statistics and are therefore macroscopically distinguishable.
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Submitted 15 February, 2019; v1 submitted 31 October, 2018;
originally announced November 2018.
