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Electrical Manipulation of Telecom Color Centers in Silicon
Authors:
Aaron M. Day,
Madison Sutula,
Jonathan R. Dietz,
Alexander Raun,
Denis D. Sukachev,
Mihir K. Bhaskar,
Evelyn L. Hu
Abstract:
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble opti…
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Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.
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Submitted 14 November, 2023;
originally announced November 2023.
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Deterministic Creation of Strained Color Centers in Nanostructures via High-Stress Thin Films
Authors:
Daniel R. Assumpcao,
Chang **,
Madison Sutula,
Sophie W. Ding,
Phong Pham,
Can M. Knaut,
Mihir K. Bhaskar,
Abishrant Panday,
Aaron M. Day,
Dylan Renaud,
Mikhail D. Lukin,
Evelyn Hu,
Bartholomeus Machielse,
Marko Loncar
Abstract:
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence proper…
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Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon vacancy centers have been shown to operate at temperatures beyond 1K without phonon-mediated decoherence. In this work we combine high-stress silicon nitride thin films with diamond nanostructures in order to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of $\sim 4 \times 10^{-4}$. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.
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Submitted 4 November, 2023; v1 submitted 13 September, 2023;
originally announced September 2023.
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Development of a Boston-area 50-km fiber quantum network testbed
Authors:
Eric Bersin,
Matthew Grein,
Madison Sutula,
Ryan Murphy,
Yan Qi Huan,
Mark Stevens,
Aziza Suleymanzade,
Catherine Lee,
Ralf Riedinger,
David J. Starling,
Pieter-Jan Stas,
Can M. Knaut,
Neil Sinclair,
Daniel R. Assumpcao,
Yan-Cheng Wei,
Erik N. Knall,
Bartholomeus Machielse,
Denis D. Sukachev,
David S. Levonian,
Mihir K. Bhaskar,
Marko Lončar,
Scott Hamilton,
Mikhail Lukin,
Dirk Englund,
P. Benjamin Dixon
Abstract:
Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Bo…
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Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities.
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Submitted 5 January, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Telecom networking with a diamond quantum memory
Authors:
Eric Bersin,
Madison Sutula,
Yan Qi Huan,
Aziza Suleymanzade,
Daniel R. Assumpcao,
Yan-Cheng Wei,
Pieter-Jan Stas,
Can M. Knaut,
Erik N. Knall,
Carsten Langrock,
Neil Sinclair,
Ryan Murphy,
Ralf Riedinger,
Matthew Yeh,
C. J. Xin,
Saumil Bandyopadhyay,
Denis D. Sukachev,
Bartholomeus Machielse,
David S. Levonian,
Mihir K. Bhaskar,
Scott Hamilton,
Hongkun Park,
Marko Lončar,
Martin M. Fejer,
P. Benjamin Dixon
, et al. (2 additional authors not shown)
Abstract:
Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy…
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Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy (SiV) center in diamond to the telecom O-band, maintaining low noise ($g^2(0)<0.1$) and high indistinguishability ($V=89\pm8\%$). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50 km deployed fiber link, to the visible band and map** their quantum states onto a diamond quantum memory with fidelity $\mathcal{F}=87\pm 2.5 \% $. These results demonstrate the viability of SiV quantum memories integrated with telecom-band systems for scalable quantum networking applications.
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Submitted 17 July, 2023;
originally announced July 2023.
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Large-scale optical characterization of solid-state quantum emitters
Authors:
Madison Sutula,
Ian Christen,
Eric Bersin,
Michael P. Walsh,
Kevin C. Chen,
Justin Mallek,
Alexander Melville,
Michael Titze,
Edward S. Bielejec,
Scott Hamilton,
Danielle Braje,
P. Benjamin Dixon,
Dirk R. Englund
Abstract:
Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color center…
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Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color centers by registering them to a fabricated machine-readable global coordinate system, enabling systematic comparison of the same color center sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of color centers and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable accelerated identification of useful quantum emitters at chip-scale, enabling advances in scaling up color center platforms for quantum information applications, materials science, and device design and characterization.
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Submitted 24 October, 2022;
originally announced October 2022.
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Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities
Authors:
Aaron M. Day,
Jonathan R. Dietz,
Madison Sutula,
Matthew Yeh,
Evelyn L. Hu
Abstract:
High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in develo** scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-int…
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High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in develo** scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-integrated spin defects using a nanosecond-pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon monovacancy (V$_{Si}^-$) defect formation within the $100~\text{nm}^3$ cavity mode volume. We observe defect spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold, and show single-shot local annealing of the intrinsic background defects at the V$_{Si}^-$ formation sites. This real-time in-situ method of localized defect formation, paired with demonstration of cavity-integrated defect spins, marks an important step in engineering cavity-emitter coupling for quantum networking.
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Submitted 5 October, 2022; v1 submitted 30 September, 2022;
originally announced October 2022.
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An integrated photonic engine for programmable atomic control
Authors:
Ian Christen,
Madison Sutula,
Thomas Propson,
Hamed Sattari,
Gregory Choong,
Christopher Panuski,
Alexander Melville,
Justin Mallek,
Scott Hamilton,
P. Benjamin Dixon,
Adrian J. Menssen,
Danielle Braje,
Amir H. Ghadimi,
Dirk Englund
Abstract:
Solutions for scalable, high-performance optical control are important for the development of scaled atom-based quantum technologies. Modulation of many individual optical beams is central to the application of arbitrary gate and control sequences on arrays of atoms or atom-like systems. At telecom wavelengths, miniaturization of optical components via photonic integration has pushed the scale and…
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Solutions for scalable, high-performance optical control are important for the development of scaled atom-based quantum technologies. Modulation of many individual optical beams is central to the application of arbitrary gate and control sequences on arrays of atoms or atom-like systems. At telecom wavelengths, miniaturization of optical components via photonic integration has pushed the scale and performance of classical and quantum optics far beyond the limitations of bulk devices. However, these material platforms for high-speed telecom integrated photonics are not transparent at the short wavelengths required by leading atomic systems. Here, we propose and implement a scalable and reconfigurable photonic architecture for multi-channel quantum control using integrated, visible-light modulators based on thin-film lithium niobate. Our approach combines techniques in free-space optics, holography, and control theory together with a sixteen-channel integrated photonic device to stabilize temporal and cross-channel power deviations and enable precise and uniform control. Applying this device to a homogeneous constellation of silicon-vacancy artificial atoms in diamond, we present techniques to spatially and spectrally address a dynamically-selectable set of these stochastically-positioned point emitters. We anticipate that this scalable and reconfigurable optical architecture will lead to systems that could enable parallel individual programmability of large many-body atomic systems, which is a critical step towards universal quantum computation on such hardware.
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Submitted 13 August, 2022;
originally announced August 2022.
