A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators
Authors:
Kiyoung Ko,
Daewon Suk,
Dohyeong Kim,
Soobong Park,
Betul Sen,
Dae-Gon Kim,
Yingying Wang,
Shixun Dai,
Xunsi Wang,
Rong** Wang,
Byung Jae Chun,
Kwang-Hoon Ko,
Peter T. Rakich,
Duk-Yong Choi,
Hansuek Lee
Abstract:
Ultra-high-Q optical resonators have facilitated recent advancements in on-chip photonics by effectively harnessing nonlinear phenomena providing useful functionalities. While these breakthroughs, primarily focused on the near-infrared region, have extended interest to longer wavelengths holding importance for monitoring and manipulating molecules, the absence of ultra-high-Q resonators in this re…
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Ultra-high-Q optical resonators have facilitated recent advancements in on-chip photonics by effectively harnessing nonlinear phenomena providing useful functionalities. While these breakthroughs, primarily focused on the near-infrared region, have extended interest to longer wavelengths holding importance for monitoring and manipulating molecules, the absence of ultra-high-Q resonators in this region remains a significant challenge. Here, we have developed on-chip microresonators with a remarkable Q-factor of 38 million, surpassing previous mid-infrared records by over 30 times. Employing innovative fabrication techniques, including the spontaneous formation of light-guiding geometries during material deposition, resonators with internal multilayer structures have been seamlessly created and passivated with chalcogenide glasses within a single chamber. Major loss factors, especially airborne-chemical absorption, were thoroughly investigated and mitigated by extensive optimization of resonator geometries and fabrication procedures. This allowed us to access the fundamental loss performance offered by doubly purified chalcogenide glass sources, as demonstrated in their fiber form. Exploiting this ultra-high-Q resonator, we successfully demonstrated Brillouin lasing on a chip for the first time in the mid-infrared, with a threshold power of 91.9 μW and a theoretical Schawlow-Townes linewidth of 83.45 Hz, far surpassing carrier phase noise. Our results showcase the effective integration of cavity-enhanced optical nonlinearities into on-chip mid-infrared photonics.
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Submitted 10 April, 2024;
originally announced April 2024.
