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On-chip Nanophotonic Broadband Wavelength Detector with 2D-Electron Gas
Authors:
Vishal Kaushik,
Swati Rajput,
Sulabh Srivastav,
Lalit Singh,
Prem Babu,
Elham Heidari,
Moustafa Ahmed,
Yas Al-Hadeethi,
Hamed Dalir,
Volker J. Sorger,
Mukesh Kumar
Abstract:
Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters necessitates the development of a simple, on-chip platform for easy-to-use wavelength detection system. Also, intensity fluctuations hinder precise, noise free detec…
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Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters necessitates the development of a simple, on-chip platform for easy-to-use wavelength detection system. Also, intensity fluctuations hinder precise, noise free detection of spectral information. Here we propose a novel approach of utilizing wavelength sensitive photocurrent across semiconductor heterojunctions to experimentally validate broadband wavelength detection on an on-chip platform with simple fabrication process. The proposed device utilizes linear frequency response of internal photoemission via 2-D electron gas in a ZnO based heterojunction along with a reference junction for coherent common mode rejection. We report sensitivity of 0.96 uA/nm for a broad wavelength-range of 280 nm from 660-940 nm. Simple fabrication process, efficient intensity noise cancelation along with heat resistance and radiation hardness of ZnO makes the proposed platform simple, low-cost and efficient alternative for several applications such as optical spectrometers, sensing and IOTs.
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Submitted 4 November, 2021;
originally announced November 2021.
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Implementation of the exact semi-classical light-matter interaction - the easy way
Authors:
Lasse Kragh Sørensen,
Emil Kieri,
Shruti Srivastav,
Marcus Lundberg,
Roland Lindh
Abstract:
We present an analytical and numerical solution of the calculation of the transition moments for the exact semi-classical light-matter interaction for wavefunctions expanded in a Gaussian basis. By a simple manipulation we show that the exact semi-classical light-matter interaction of a plane wave can be compared to a Fourier transformation of a Gaussian where analytical recursive formulas are wel…
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We present an analytical and numerical solution of the calculation of the transition moments for the exact semi-classical light-matter interaction for wavefunctions expanded in a Gaussian basis. By a simple manipulation we show that the exact semi-classical light-matter interaction of a plane wave can be compared to a Fourier transformation of a Gaussian where analytical recursive formulas are well known and hence making the difficulty in the implementation of the exact semi-classical light-matter interaction comparable to the transition dipole. Since the evaluation of the analytical expression involves a new Gaussian we instead have chosen to evaluate the integrals using a standard Gauß-Hermite quadrature since this is faster. A brief discussion of the numerical advantages of the exact semi-classical light-matter interaction in comparison to the multipole expansion along with the unphysical interpretation of the multipole expansion is discussed. Numerical examples on [CuCl$_4$]$^{2-}$ to show that the usual features of the multipole expansion is immediately visible also for the exact semi-classical light-matter interaction and that this can be used to distinguish between symmetries. Calculation on [FeCl$_4$]$^{1-}$ is presented to demonstrate the better numerical stability with respect to the choice of basis set in comparison to the multipole expansion and finally Fe-O-Fe to show origin independence is a given for the exact operator. The implementation is freely available in OpenMolcas.
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Submitted 5 September, 2018;
originally announced September 2018.
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Effect of nanostructure on thermoelectric properties of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ in 300-600 K range
Authors:
Saurabh Singh,
Simant Kumar Srivastav,
Ashutosh Patel,
Ratnamala Chatterjee,
Sudhir Kumar Pandey
Abstract:
In oxide materials, nanostructuring effect has been found very promising approach for the enhancement of \textit{figure-of-merit}, \textit{ZT}. In the present work, we have synthesized La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) compound using sol-gel method and samples of crystallite size of 34, 41, and 49 nm were obtained by giving different heat treatment. Seebeck coefficient ($α$), electrical resisti…
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In oxide materials, nanostructuring effect has been found very promising approach for the enhancement of \textit{figure-of-merit}, \textit{ZT}. In the present work, we have synthesized La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) compound using sol-gel method and samples of crystallite size of 34, 41, and 49 nm were obtained by giving different heat treatment. Seebeck coefficient ($α$), electrical resistivity ($ρ$), and thermal conductivity ($κ$) measurements were carried out in 300-600 K temperature range. The systematic change in the values of $α$ from $\sim$ -19 $μ$V/K to $\sim$ -24 $μ$V/K and drastic reduction in the values of $κ$ from $\sim$0.88 W/mK to $\sim$0.23 W/mK are observed as crystallite size is reduced from 49 nm to 34 nm at $\sim$600 K. Also, fall in the values of $ρ$ in the paramagnetic (PM) insulator phase (400-600 K) are effectively responsible for the increasing trend in the values of \textit{ZT} at high temperature. For the crystallite size of 41 nm, value of \textit{ZT} at 600 K was found to be $\sim$0.017, which can be further increased up to $\sim$0.045 around 650 K temperature. The predicted value of \textit{ZT} suggests that LSMO can be suitable oxide material for thermoelectric applications at high temperature.
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Submitted 4 October, 2017; v1 submitted 21 September, 2017;
originally announced September 2017.
