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Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform
Authors:
Nicholas S. Yama,
I-Tung Chen,
Srivatsa Chakravarthi,
Bingzhao Li,
Christian Pederson,
Bethany E. Matthews,
Steven R. Spurgeon,
Daniel E. Perea,
Mark G. Wirth,
Peter V. Sushko,
Mo Li,
Kai-Mei C. Fu
Abstract:
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In t…
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The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional map**, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
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Submitted 19 May, 2023;
originally announced May 2023.
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Evaluating Stage Motion for Automated Electron Microscopy
Authors:
Kevin R. Fiedler,
Matthew Olszta,
Kayla Yano,
Christina Doty,
Derek Hopkins,
Sarah Akers,
Steven R. Spurgeon
Abstract:
Precise control is an essential and elusive quality of emerging self-driving microscopes. It is widely understood these instruments must be capable of performing rapid, high-volume, and arbitrary movements for practical self-driving operation. However, stage movements are difficult to automate at scale, owing to mechanical instability, hysteresis, and thermal drift. Such difficulties pose major ba…
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Precise control is an essential and elusive quality of emerging self-driving microscopes. It is widely understood these instruments must be capable of performing rapid, high-volume, and arbitrary movements for practical self-driving operation. However, stage movements are difficult to automate at scale, owing to mechanical instability, hysteresis, and thermal drift. Such difficulties pose major barriers to intelligent microscope designs that require repeatable, precise movements. To guide design of emerging instruments, it is necessary to understand the behavior of existing designs to identify rate limiting steps for full autonomy. Here we describe a general framework to evaluate stage motion in any electron microscope. We define metrics to evaluate stage degrees of freedom, propose solutions to improve performance, and comment on fundamental limits to automated experimentation using present hardware.
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Submitted 16 December, 2022;
originally announced December 2022.
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Free-Standing Epitaxial SrTiO$_3$ Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy
Authors:
Hyo** Yoon,
Tristan K. Truttmann,
Fengdeng Liu,
Bethany E. Matthews,
Sooho Choo,
Qun Su,
Vivek Saraswat,
Sebastian Manzo,
Michael S. Arnold,
Mark E. Bowden,
Jason K. Kawasaki,
Steven J. Koester,
Steven R. Spurgeon,
Scott A. Chambers,
Bharat Jalan
Abstract:
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, w…
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The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphene. The technique produces films with self-regulating cation stoichiometry control and epitaxial orientation to the oxide substrate. Furthermore, the films can be exfoliated and transferred to foreign substrates while leaving the graphene on the original substrate. These results open the door to future studies of previously unattainable free-standing nano-membranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy, and has potentially important implications for the commercial application of perovskite oxides in flexible electronics.
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Submitted 17 June, 2022;
originally announced June 2022.
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Scanning Transmission Electron Microscopy of Oxide Interfaces and Heterostructures
Authors:
Steven R. Spurgeon
Abstract:
Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications. While precision synthesis techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD), provide a high degree of control over these systems,…
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Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications. While precision synthesis techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD), provide a high degree of control over these systems, there remains a disconnect between ideal and realized materials. Because thin films adopt structures and chemistries distinct from their bulk counterparts, it is often difficult to predict what properties will emerge. The complex energy landscape of the synthesis process is also strongly influenced by non-equilibrium growth conditions imposed by the substrate, as well as the kinetics of thin film crystallization and fluctuations in process variables, all of which can lead to significant deviations from targeted outcomes. High-resolution structural and chemical characterization techniques, as described in this volume, are needed to verify growth models, bound theoretical calculations, and guide materials design. While many characterization options exist, most are spatially-averaged or indirect, providing only partial insight into the complex behavior of these systems. Over the past several decades, scanning transmission electron microscopy (STEM) has become a cornerstone of oxide heterostructure characterization owing to its ability to simultaneously resolve structure, chemistry, and defects at the highest spatial resolution. STEM methods are an essential complement to averaged scattering techniques, offering a direct picture of resulting materials that can inform and refine the growth process to achieve targeted properties. There is arguably no other technique that can provide such a broad array of information at the atomic-scale, all within a single experimental session.
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Submitted 10 January, 2020; v1 submitted 3 January, 2020;
originally announced January 2020.
