Showing 1–13 of 13 results for author: Speer, T

Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

Authors: W. Adam, T. Bergauer, M. Dragicevic, M. Friedl, R. Fruehwirth, M. Hoch, J. Hrubec, M. Krammer, W. Treberspurg, W. Waltenberger, S. Alderweireldt, W. Beaumont, X. Janssen, S. Luyckx, P. Van Mechelen, N. Van Remortel, A. Van Spilbeeck, P. Barria, C. Caillol, B. Clerbaux, G. De Lentdecker, D. Dobur, L. Favart, A. Grebenyuk, Th. Lenzi , et al. (663 additional authors not shown)

Abstract: The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi… ▽ More The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Journal ref: 2016 JINST 11 P04023

Design and performance of the silicon sensors for the CMS barrel pixel detector

Authors: Y. Allkofer, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, R. Horisberger, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, M. Swartz, T. Speer

Abstract: The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program… ▽ More The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented. △ Less

Submitted 12 February, 2007; originally announced February 2007.

Comments: 22 pages, 21 figures

Journal ref: Nucl.Instrum.Meth.A584:25-41,2008

Simulation of Heavily Irradiated Silicon Pixel Detectors

Authors: M. Swartz, V. Chiochia, Y. Allkofer, C. Amsler, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer

Abstract: We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}… ▽ More We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS. △ Less

Submitted 24 May, 2006; originally announced May 2006.

Comments: Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figures

Journal ref: ECONF C0604032:0014,2006

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

Authors: M. Swartz, V. Chiochia, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer

Abstract: We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}… ▽ More We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon. △ Less

Submitted 5 January, 2006; v1 submitted 5 October, 2005; originally announced October 2005.

Comments: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005 Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee comments and to fix broken reference links

Journal ref: Nucl.Instrum.Meth. A565 (2006) 212-220

A double junction model of irradiated silicon pixel sensors for LHC

Authors: V. Chiochia, M. Swartz, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, M. Swartz, T. Speer

Abstract: In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to… ▽ More In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages. △ Less

Submitted 30 June, 2005; originally announced June 2005.

Comments: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figures

Journal ref: Nucl.Instrum.Meth.A568:51-55,2006

Extraction of electric field in heavily irradiated silicon pixel sensors

Authors: A. Dorokhov, Y. Allkofer, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. Sanders, S. Son, T. Speer, M. Swartz

Abstract: A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to… ▽ More A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors. △ Less

Submitted 25 June, 2005; v1 submitted 6 December, 2004; originally announced December 2004.

Comments: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth. A

Journal ref: Nucl.Instrum.Meth.A560:112-117,2006

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

Authors: T. Rohe, D. Bortoletto, V. Chiochia, L. M. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, D. A. Sanders, S. Son, T. Speer, M. Swartz

Abstract: The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between… ▽ More The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated. △ Less

Submitted 4 January, 2005; v1 submitted 23 November, 2004; originally announced November 2004.

Comments: 11 Pages, Presented at the 5th Int. Conf. on Radiation Effects on Semiconductor Materials Detectors and Devices, October 10-13, 2004 in Florence, Italy, v3: more typos corrected, minor changes required by the referee

Journal ref: Nucl.Instrum.Meth.A552:232-238,2005

Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

Authors: Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto, Lucien Cremaldi, Susanna Cucciarelli, Andrei Dorokhov, Christoph Hoermann, Dongwook Kim, Marcin Konecki, Danek Kotlinski, Kirill Prokofiev, Christian Regenfus, Tilman Rohe, David A. Sanders, Seunghee Son, Thomas Speer

Abstract: Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standar… ▽ More Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective do** density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trap** observed in the data. △ Less

Submitted 4 May, 2005; v1 submitted 16 November, 2004; originally announced November 2004.

Comments: 8 pages, 11 figures. Talk presented at the 2004 IEEE Nuclear Science Symposium, October 18-21, Rome, Italy. Submitted to IEEE Transactions on Nuclear Science

Journal ref: IEEE Trans.Nucl.Sci. 52 (2005) 1067-1075

Type inversion in irradiated silicon: a half truth

Authors: M. Swartz, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, A. Dorokhov, M. Konecki, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer

Abstract: Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standar… ▽ More Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective do** density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trap** observed in the data. △ Less

Submitted 13 September, 2004; v1 submitted 9 September, 2004; originally announced September 2004.

Comments: 18 pages, LaTeX document, 11 figures, version 2 fixes small typos

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

Authors: T. Rohe, D. Bortoletto, V. Chiochia, L. M. Cremaldi, S. Cucciarelli, A. Dorokhov, M. Konecki, K. Prokofiev, C. Regenfus, D. A. Sanders, S. Son, T. Speer, M. Swartz

Abstract: This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full ana… ▽ More This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed. △ Less

Submitted 31 August, 2004; v1 submitted 2 December, 2003; originally announced December 2003.

Comments: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title changed

Journal ref: IEEE Trans.Nucl.Sci.51:1150-1157,2004

Tests of silicon sensors for the CMS pixel detector

Authors: A. Dorokhov, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, M. Konecki, K. Prokofiev, C. Regenfus, T. Rohe, D. Sanders, S. Son, T. Speer, M. Swartz

Abstract: The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel… ▽ More The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages. △ Less

Submitted 11 November, 2003; originally announced November 2003.

Comments: Talk presented at 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, September 29-October 1, 2003, Firenze, Italy. Proceedings will be published in Nuclear Instr. & Methods in Phys. Research, Section A

Journal ref: Nucl.Instrum.Meth.A530:71-76,2004

Vertex reconstruction framework and its implementation for CMS

Authors: T. Boccali, R. Fruhwirth, W. Waltenberger, K. Prokofiev, T. Speer, P. Vanlaer

Abstract: The class framework developed for vertex reconstruction in CMS is described. We emphasize how we proceed to develop a flexible, efficient and reliable piece of reconstruction software. We describe the decomposition of the algorithms into logical parts, the mathematical toolkit, and the way vertex reconstruction integrates into the CMS reconstruction project ORCA. We discuss the tools that we hav… ▽ More The class framework developed for vertex reconstruction in CMS is described. We emphasize how we proceed to develop a flexible, efficient and reliable piece of reconstruction software. We describe the decomposition of the algorithms into logical parts, the mathematical toolkit, and the way vertex reconstruction integrates into the CMS reconstruction project ORCA. We discuss the tools that we have developed for algorithm evaluation and optimization and for code release. △ Less

Submitted 2 June, 2003; originally announced June 2003.

Comments: Talk from the 2003 Computing in High Energy and Nuclear Physics (CHEP03), La Jolla, Ca, USA, March 2003, 4 pages, LaTeX, no figures. PSN TULT012

Journal ref: ECONF C0303241:TULT012,2003

New vertex reconstruction algorithms for CMS

Authors: R. Fruehwirth, W. Waltenberger, K. Prokofiev, T. Speer, P. Vanlaer, E. Chabanat, N. Estre

Abstract: The reconstruction of interaction vertices can be decomposed into a pattern recognition problem (``vertex finding'') and a statistical problem (``vertex fitting''). We briefly review classical methods. We introduce novel approaches and motivate them in the framework of high-luminosity experiments like at the LHC. We then show comparisons with the classical methods in relevant physics channels The reconstruction of interaction vertices can be decomposed into a pattern recognition problem (``vertex finding'') and a statistical problem (``vertex fitting''). We briefly review classical methods. We introduce novel approaches and motivate them in the framework of high-luminosity experiments like at the LHC. We then show comparisons with the classical methods in relevant physics channels △ Less

Submitted 1 June, 2003; originally announced June 2003.

Comments: Talk from the 2003 Computing in High Energy and Nuclear Physics (CHEP03), La Jolla, Ca, USA, March 2003, 5 pages, LaTeX, 3 eps figures. PSN TULT013

Journal ref: ECONF C0303241:TULT013,2003