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Coherent Acoustic Phonons in Plasmonic Nanoparticles: Elastic Properties and Dissipation at Low Temperatures
Authors:
Hilario D. Boggiano,
Thomas Possmayer,
Luis Morguet,
Lin Nan,
Luca Sortino,
Stefan A. Maier,
Emiliano Cortés,
Gustavo Grinblat,
Andrea V. Bragas,
Leonardo de S. Menezes
Abstract:
We studied the frequency and quality factor of mechanical plasmonic nanoresonators as a function of temperature, ranging from ambient to 4 K. Our investigation focused on individual gold nanorods and nanodisks of various sizes. We observed that oscillation frequencies increase linearly as temperature decreases until saturation is reached at cryogenic temperatures. This behavior is explained by the…
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We studied the frequency and quality factor of mechanical plasmonic nanoresonators as a function of temperature, ranging from ambient to 4 K. Our investigation focused on individual gold nanorods and nanodisks of various sizes. We observed that oscillation frequencies increase linearly as temperature decreases until saturation is reached at cryogenic temperatures. This behavior is explained by the temperature dependence of the elastic modulus, with a Debye temperature compatible with reported bulk values for gold. To describe the behavior of the quality factor, we developed a model considering the nanostructures as anelastic solids, identifying a dissipation peak around 150 K due to a thermally activated process, likely of the Niblett-Wilks mechanism type. Importantly, our findings suggest that external dissipation factors are more critical to improving quality factors than internal friction, which can be increased by modifying the nanoresonator's environment. Our results enable the design of structures with high vibration frequencies and quality factors by effectively controlling external losses.
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Submitted 8 July, 2024;
originally announced July 2024.
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Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Authors:
Alessandro Catanzaro,
Armando Genco,
Charalambos Louca,
David A. Ruiz-Tijerina,
Daniel J. Gillard,
Luca Sortino,
Aleksey Kozikov,
Evgeny M. Alexeev,
Riccardo Pisoni,
Lee Hague,
Kenji Watanabe,
Takashi Taniguchi,
Klauss Ensslin,
Kostya S. Novoselov,
Vladimir Fal'ko,
Alexander I. Tartakovskii
Abstract:
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M…
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Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Submitted 23 September, 2023;
originally announced September 2023.
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Optically addressable spin defects coupled to bound states in the continuum metasurfaces
Authors:
Luca Sortino,
Angus Gale,
Lucca Kühner,
Chi Li,
Jonas Biechteler,
Fedja J. Wendisch,
Mehran Kianinia,
Haoran Ren,
Milos Toth,
Stefan A. Maier,
Igor Aharonovich,
Andreas Tittl
Abstract:
Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologie…
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Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances leveraging quasi-bound states in the continuum (qBICs). Coupling between spin defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth facilitated by Q factors exceeding $10^2$. Our findings demonstrate a new class of spin based metasurfaces and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission.
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Submitted 6 March, 2024; v1 submitted 9 June, 2023;
originally announced June 2023.
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Radiative suppression of exciton-exciton annihilation in a two-dimensional semiconductor
Authors:
Luca Sortino,
Merve Gülmüs,
Benjamin Tilmann,
Leonardo de S. Menezes,
Stefan A. Maier
Abstract:
Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton annihilation (EEA) processes, setting a fundamental limit for their photonic applications. In this work, we demonstrate suppression of EEA via enhancement of light…
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Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton annihilation (EEA) processes, setting a fundamental limit for their photonic applications. In this work, we demonstrate suppression of EEA via enhancement of light-matter interaction in hybrid 2D semiconductor-dielectric nanophotonic platforms, by coupling excitons in WS$ _2 $ monolayers with optical Mie resonances in dielectric nanoantennas. The hybrid system reaches an intermediate light-matter coupling regime, with photoluminescence enhancement factors up to 10$ ^2 $. Probing the exciton ultrafast dynamics reveal suppressed EEA for coupled excitons, even under high exciton densities $>$ 10$^{12}$ cm$^{-2} $. We extract EEA coefficients in the order of 10$^{-3} $, compared to 10$^{-2} $ for uncoupled monolayers, as well as absorption enhancement of 3.9 and a Purcell factor of 4.5. Our results highlight engineering the photonic environment as a route to achieve higher quantum efficiencies for low-power hybrid devices, and larger exciton densities, towards strongly correlated excitonic phases in 2D semiconductors.
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Submitted 12 April, 2023;
originally announced April 2023.
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High-Q nanophotonics over the full visible spectrum enabled by hexagonal boron nitride metasurfaces
Authors:
Lucca Kühner,
Luca Sortino,
Benjamin Tilmann,
Thomas Weber,
Kenji Watanabe,
Takashi Taniguchi,
Stefan A. Maier,
Andreas Tittl
Abstract:
All-dielectric optical metasurfaces with high quality (Q) factors have so far been hampered by the lack of simultaneously lossless and high refractive index (RI) materials over the full visible spectrum. To achieve broad spectral coverage, the use of low-index materials is, in fact, unavoidable due to the inverse correlation between the band-gap energy (and therefore the optical losses) and the RI…
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All-dielectric optical metasurfaces with high quality (Q) factors have so far been hampered by the lack of simultaneously lossless and high refractive index (RI) materials over the full visible spectrum. To achieve broad spectral coverage, the use of low-index materials is, in fact, unavoidable due to the inverse correlation between the band-gap energy (and therefore the optical losses) and the RI. However, for Mie resonant photonics, smaller RIs are associated with reduced Q factors and mode volume confinement. In this work, we leverage symmetry-broken bound states in the continuum (BICs) to efficiently suppress radiation losses from the low-index (n~2) van der Waals material hexagonal boron nitride (hBN), realizing metasurfaces with high-Q resonances over the complete visible spectrum. In particular, we analyze the rational use of low and high RI materials as resonator components and harness our insights to experimentally demonstrate sharp BIC resonances with Q factors above 300, spanning wavelengths between 400 nm and 1000 nm from a single hBN flake. Moreover, we utilize the enhanced electric near-fields to demonstrate second harmonic generation (SHG) with enhancement factors above 102. Our results provide a theoretical and experimental framework for the implementation of low RI materials as photonic media for metaoptics.
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Submitted 20 October, 2022;
originally announced October 2022.
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Strong light-matter interaction with self-hybridized bound states in the continuum in monolithic van der Waals metasurfaces
Authors:
Thomas Weber,
Lucca Kühner,
Luca Sortino,
Amine Ben Mhenni,
Nathan P. Wilson,
Julius Kühne,
Jonathan J. Finley,
Stefan A. Maier,
Andreas Tittl
Abstract:
Photonic bound states in the continuum (BICs) are a standout nanophotonic platform for strong light-matter coupling with transition metal dichalcogenides (TMDCs), but have so far mostly been employed as all-dielectric metasurfaces with adjacent TMDC layers, incurring limitations related to strain, mode overlap, and material integration. In this work, we experimentally demonstrate for the first tim…
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Photonic bound states in the continuum (BICs) are a standout nanophotonic platform for strong light-matter coupling with transition metal dichalcogenides (TMDCs), but have so far mostly been employed as all-dielectric metasurfaces with adjacent TMDC layers, incurring limitations related to strain, mode overlap, and material integration. In this work, we experimentally demonstrate for the first time asymmetry-dependent BIC resonances in 2D arrays of monolithic metasurfaces composed solely of the nanostructured bulk TMDC WS$_2$ with BIC modes exhibiting sharp and tailored linewidths, ideal for selectively enhancing light-matter interactions. Geometrical variation enables the tuning of the BIC resonances across the exciton resonance in bulk WS$_2$, revealing the strong-coupling regime with an anti-crossing pattern and a Rabi splitting of 116 meV. The precise control over the radiative loss channel provided by the BIC concept is harnessed to tailor the Rabi splitting via a geometrical asymmetry parameter of the metasurface. Crucially, the coupling strength itself can be controlled and is shown to be independent of material-intrinsic losses. Our BIC-driven monolithic metasurface platform can readily incorporate other TMDCs or excitonic materials to deliver previously unavailable fundamental insights and practical device concepts for polaritonic applications.
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Submitted 5 September, 2022;
originally announced September 2022.
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Van der Waals Materials for Applications in Nanophotonics
Authors:
Panaiot G. Zotev,
Yue Wang,
Daniel Andres-Penares,
Toby Severs Millard,
Sam Randerson,
Xuerong Hu,
Luca Sortino,
Charalambos Louca,
Mauro Brotons-Gisbert,
Tahiyat Huq,
Stefano Vezzoli,
Riccardo Sapienza,
Thomas F. Krauss,
Brian Gerardot,
Alexander I. Tartakovskii
Abstract:
Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v…
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Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.
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Submitted 31 October, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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Radial bound states in the continuum for polarization-invariant nanophotonics
Authors:
Lucca Kühner,
Luca Sortino,
Rodrigo Berté,
Juan Wang,
Haoran Ren,
Stefan A. Maier,
Yuri S. Kivshar,
Andreas Tittl
Abstract:
All-dielectric nanophotonics underpinned by the physics of bound states in the continuum (BICs) have demonstrated breakthrough applications in nanoscale light manipulation, frequency conversion and optical sensing. Leading BIC implementations range from isolated nanoantennas with localized electromagnetic fields to symmetry-protected metasurfaces with controllable resonance quality (Q) factors. Ho…
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All-dielectric nanophotonics underpinned by the physics of bound states in the continuum (BICs) have demonstrated breakthrough applications in nanoscale light manipulation, frequency conversion and optical sensing. Leading BIC implementations range from isolated nanoantennas with localized electromagnetic fields to symmetry-protected metasurfaces with controllable resonance quality (Q) factors. However, they either require structured light illumination with complex beam-sha** optics or large, fabrication-intense arrays of polarization-sensitive unit cells, hindering tailored nanophotonic applications and on-chip integration. Here, we introduce radial quasi bound states in the continuum (radial BICs) as a new class of radially distributed electromagnetic modes controlled by structural asymmetry in a ring of dielectric rod pair resonators. The radial BIC platform provides polarization-invariant and tunable high-Q resonances with strongly enhanced near fields in an ultracompact footprint as low as 2 $μ$m$^2$. We demonstrate radial BIC realizations in the visible for sensitive biomolecular detection and enhanced second-harmonic generation from monolayers of transition metal dichalcogenides, opening new perspectives for compact, spectrally selective, and polarization-invariant metadevices for multi-functional light-matter coupling, multiplexed sensing, and high-density on-chip photonics.
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Submitted 30 August, 2022; v1 submitted 10 June, 2022;
originally announced June 2022.
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Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps
Authors:
Panaiot G. Zotev,
Yue Wang,
Luca Sortino,
Toby Severs Millard,
Nic Mullin,
Donato Conteduca,
Mostafa Shagar,
Armando Genco,
Jamie K. Hobbs,
Thomas F. Krauss,
Alexander I. Tartakovskii
Abstract:
Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structu…
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Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe$_2$ monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240. We introduce post-fabrication atomic force microscope repositioning and rotation of dimer nano-antennas, achieving gaps as small as 10$\pm$5 nm, opening the possibility to a host of potential applications including strong Purcell enhancement of single photon emitters and optical trap**, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nano-photonics by exploring new applications enabled by their unique properties.
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Submitted 2 December, 2021; v1 submitted 19 May, 2021;
originally announced May 2021.
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Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas
Authors:
L. Sortino,
P. G. Zotev,
S. Mignuzzi,
J. Cambiasso,
D. Schmidt,
A. Genco,
M. Aßmann,
M. Bayer,
S. A. Maier,
R. Sapienza,
A. I. Tartakovskii
Abstract:
Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we…
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Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe$_2$. We observe a photoluminescence enhancement exceeding 10$^4$ compared with WSe$_2$ placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10$^3$. Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors.
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Submitted 11 November, 2019; v1 submitted 20 June, 2019;
originally announced June 2019.
