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Single quantum dot selection and tailor-made photonic device integration using nanoscale focus pinspot
Authors:
Minho Choi,
Mireu Lee,
Sung-Yul L. Park,
Byung Su Kim,
Seongmoon Jun,
Suk In Park,
** Dong Song,
Young-Ho Ko,
Yong-Hoon Cho
Abstract:
Among the diverse platforms of quantum light sources, epitaxially grown semiconductor quantum dots (QDs) are one of the most attractive workhorses for realizing various quantum photonic technologies owing to their outstanding brightness and scalability. There exist various material systems for these QDs based on their appropriate emission bandwidth; however, only a few material systems have succes…
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Among the diverse platforms of quantum light sources, epitaxially grown semiconductor quantum dots (QDs) are one of the most attractive workhorses for realizing various quantum photonic technologies owing to their outstanding brightness and scalability. There exist various material systems for these QDs based on their appropriate emission bandwidth; however, only a few material systems have successfully grown single or low-density QDs, which are essential for quantum light sources. In most other material systems, it is difficult to realize low-density QDs, and the mesa-etching process is usually undergone in order to reduce their density. Nevertheless, the etching process irreversibly destroys the medium near the QD, which is detrimental to in-plane device integration. In this study, we apply a nondestructive luminescence picking method termed as nanoscale focus pinspot (NFP) using helium ion microscopy to reduce the luminous QD density while retaining the surrounding medium. Given that the NFP can precisely manipulate the luminescence at nanoscale resolution, a photonic device can be deterministically fabricated on the target QD matched from both spatial and spectral points of view. After applying the NFP, we extract only a single QD emission out of the high-density ensemble QD emission. Moreover, the photonic structure of a circular Bragg reflector is deterministically integrated with the selected QD, and the extraction efficiency of the QD emission has been improved 27 times. Furthermore, this technique does not destroy the medium and only controls the luminescence. Hence, it is highly applicable to various photonic structures, including photonic waveguides or photonic crystal cavities regardless of their materials.
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Submitted 16 September, 2022;
originally announced September 2022.
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Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
Authors:
Cori Haws,
Biswarup Guha,
Edgar Perez,
Marcelo Davanco,
** Dong Song,
Kartik Srinivasan,
Luca Sapienza
Abstract:
Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation ac…
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Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$μ$m x 80$μ$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.
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Submitted 10 February, 2022;
originally announced February 2022.
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Triggered single-photon generation and resonance fluorescence in ultra-low loss integrated photonic circuits
Authors:
Ashish Chanana,
Hugo Larocque,
Renan Moreira,
Jacques Carolan,
Biswarup Guha,
Vikas Anant,
** Dong Song,
Dirk Englund,
Daniel J. Blumenthal,
Kartik Srinivasan,
Marcelo Davanco
Abstract:
A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, $\leq1$ dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we rep…
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A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, $\leq1$ dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report a significant advance towards this goal, in the hybrid integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic integrated circuit. We demonstrate triggered and pure single-photon emission directly into a Si$_3$N$_4$ photonic circuit with $\approx1$ dB/m propagation loss at a wavelength of $\approx920$ nm. These losses are more than two orders of magnitude lower than reported to date for any photonic circuit with on-chip quantum emitter sources, and $>50$ % lower than for any prior foundry-compatible integrated quantum photonic circuit, to the best of our knowledge. Using these circuits we report the observation of resonance fluorescence in the strong drive regime, a milestone towards integrated coherent control of quantum emitters. These results constitute an important step forward towards the creation of scaled chip-integrated photonic quantum information systems.
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Submitted 9 February, 2022;
originally announced February 2022.
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Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector
Authors:
Cori Haws,
Edgar Perez,
Marcelo Davanco,
** Dong Song,
Kartik Srinivasan,
Luca Sapienza
Abstract:
To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communicati…
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To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications.
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Submitted 14 December, 2021;
originally announced December 2021.
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Control of single quantum emitters in bio-inspired aperiodic nano-photonic devices
Authors:
Oliver J. Trojak,
Sean Gorsky,
Connor Murray,
Fabrizio Sgrignuoli,
Felipe Arruda Pinheiro,
Suk-In Park,
** Dong Song,
Luca Dal Negro,
Luca Sapienza
Abstract:
Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial…
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Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial for cavity quantum electrodynamics experiments and for the development of classical and quantum light sources. Here, we report on the demonstration of enhanced light-matter interaction and Purcell effects on a chip, based on bio-inspired aperiodic devices fabricated in silicon nitride and gallium arsenide. Internal light sources, namely optically-active defect centers in silicon nitride and indium arsenide single quantum dots, are used to image and characterize, by means of micro-photoluminescence spectroscopy, the individual optical modes confined by photonic membranes with Vogel-spiral geometry. By studying the statistics of the measured optical resonances, in partnership with rigorous multiple scattering theory, we observe log-normal distributions and report quality factors with values as high as 2201+/-443. Building on the strong light confinement achieved in this novel platform, we further investigate the coupling of single semiconductor quantum dots to the confined optical modes. Our results show cavity quantum electrodynamics effects providing strong modifications of the spontaneous emission decay of single optical transitions: we show control of the decay lifetime of single emitters with a dynamic range reaching 20. Our findings improve the understanding of the fundamental physical properties of light-emitting Vogel-spiral systems, show their application to quantum photonic devices, and form the basis for the further development of classical and quantum active devices on a chip.
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Submitted 18 January, 2020;
originally announced January 2020.
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Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits
Authors:
Peter Schnauber,
Anshuman Singh,
Johannes Schall,
Suk In Park,
** Dong Song,
Sven Rodt,
Kartik Srinivasan,
Stephan Reitzenstein,
Marcelo Davanco
Abstract:
Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and netwo…
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Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\textit{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si$_3$N$_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si$_3$N$_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.
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Submitted 28 May, 2019;
originally announced May 2019.
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Combined metallic nano-rings and solid-immersion lenses for bright emission from single InAs/GaAs quantum dots
Authors:
Oliver Joe Trojak,
Christopher Woodhead,
Suk-In Park,
** Dong Song,
Robert James Young,
Luca Sapienza
Abstract:
Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this iss…
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Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this issue, we present a device that combines a metallic nano-ring, positioned on the sample surface and centered around the emitter, and an epoxy-based super-solid immersion lens, deterministically deposited above the ring devices. We show that the combined broadband lensing effect of the nano-ring and of the super-solid immersion lens significantly increases the extraction of light emitted by single InAs/GaAs quantum dots into free space: we observe enhancements in the emitted intensity by the nano-ring of up to a factor 20 and by the super-solid immersion lens of up to a factor 10. Such cumulative enhancements allow us to measure photon fluxes approaching 1 million counts per second, from a single InAs/GaAs quantum dot in bulk. The combined broad-band enhancement in the extraction of light can be implemented with any kind of classical and quantum solid-state emitter and opens the path to the realisation of scalable bright devices. The same approach can also be implemented to improve the absorption of light, for instance for small-area broadband photo-detectors.
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Submitted 22 January, 2018;
originally announced January 2018.
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GaAs droplet quantum dots with nanometer-thin cap** layer for plasmonic applications
Authors:
Suk In Park,
Oliver Joe Trojak,
Eunhye Lee,
** Dong Song,
Jihoon Kyhm,
Ilki Han,
Jongsu Kim,
Gyu-Chul Yi,
Luca Sapienza
Abstract:
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) cap** layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic…
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We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) cap** layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single quantum dots, at near-infrared wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are ideal candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.
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Submitted 29 October, 2017;
originally announced October 2017.
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Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
Authors:
** Liu,
Kumarasiri Konthasinghe,
Marcelo Davanco,
John Lawall,
Vikas Anant,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
** Dong Song,
Ben Ma,
Ze Sheng Chen,
Hai Qiao Ni,
Zhi Chuan Niu,
Kartik Srinivasan
Abstract:
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optic…
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Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.
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Submitted 26 October, 2017;
originally announced October 2017.
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Metallic nanorings for broadband, enhanced extraction of light from solid-state emitters
Authors:
Oliver J. Trojak,
Suk In Park,
** Dong Song,
Luca Sapienza
Abstract:
We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as hi…
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We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as high as a factor 20. Such a device is intrinsically broadband and therefore compatible with any kind of solid-state light source. We foresee the fabrication of metallic rings via scalable techniques, like nano-imprint, and their implementation to improve the emission of classical and quantum light from solid-state sources. Furthermore, while increasing the brightness of the devices, the metallic rings can also act as top contacts for the local application of electric fields for carrier injection or wavelength tuning.
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Submitted 25 April, 2017;
originally announced April 2017.
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Experimental triple-slit interference in a strongly-driven V-type artificial atom
Authors:
Adetunmise C. Dada,
Ted S. Santana,
Antonios Koutroumanis,
Yong Ma,
Suk-In Park,
** D. Song,
Brian D. Gerardot
Abstract:
Rabi oscillations of a two-level atom appear as a quantum interference effect between the amplitudes associated to atomic superpositions, in analogy with the classic double-slit experiment which manifests a sinusoidal interference pattern. By extension, through direct detection of time-resolved resonance fluorescence from a quantum-dot neutral exciton driven in the Rabi regime, we experimentally d…
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Rabi oscillations of a two-level atom appear as a quantum interference effect between the amplitudes associated to atomic superpositions, in analogy with the classic double-slit experiment which manifests a sinusoidal interference pattern. By extension, through direct detection of time-resolved resonance fluorescence from a quantum-dot neutral exciton driven in the Rabi regime, we experimentally demonstrate triple-slit-type quantum interference via quantum erasure in a V-type three-level artificial atom. This result is of fundamental interest in the experimental studies of the properties of V-type 3-level systems and may pave the way for further insight into their coherence properties as well as applications for quantum information schemes. It also suggests quantum dots as candidates for multi-path-interference experiments for probing foundational concepts in quantum physics.
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Submitted 1 August, 2017; v1 submitted 7 March, 2017;
originally announced March 2017.
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Indistinguishable and efficient single photons from a quantum dot in a planar nanobeam waveguide
Authors:
Gabija Kiršanskė,
Henri Thyrrestrup,
Raphaël S. Daveau,
Chris L. Dreeßen,
Tommaso Pregnolato,
Leonardo Midolo,
Petru Tighineanu,
Alisa Javadi,
Søren Stobbe,
Rüdiger Schott,
Arne Ludwig,
Andreas D. Wieck,
Suk In Park,
** D. Song,
Andreas V. Kuhlmann,
Immo Söllner,
Matthias C. Löbl,
Richard J. Warburton,
Peter Lodahl
Abstract:
We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a sin…
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We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a single-photon purity larger than 99.4% and a photon indistinguishability of up to 94+-1% by using p-shell excitation combined with spectral filtering to reduce photon jitter. A temperature-dependent study allows pinpointing the residual decoherence processes notably the effect of phonon broadening. Strict resonant excitation is implemented as well as another mean of suppressing photon jitter, and the additional complexity of suppressing the excitation laser source is addressed. The study opens a clear pathway towards the long-standing goal of a fully deterministic source of indistinguishable photons, which is integrated on a planar photonic chip.
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Submitted 3 October, 2017; v1 submitted 27 January, 2017;
originally announced January 2017.
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Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters
Authors:
** Liu,
Macelo Davanco,
Luca Sapienza,
Kumarasiri Konthasinghe,
Jose Vinicius De Miranda Cardoso,
** Dong Song,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locati…
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We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a $>50$~$μ$m~$\times$~50~$μ$m field of view are determined with $\approx4.5$~nm uncertainty (one standard deviation) in a 1~s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross-correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.
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Submitted 21 December, 2016;
originally announced December 2016.
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Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Authors:
Luca Sapienza,
** Liu,
** Dong Song,
Stefan Falt,
Werner Wegscheider,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane…
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We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions. This behavior is observed across multiple wafers produced in different growth chambers. Our characterization approach is relevant to applications in which single quantum dots are embedded within nanofabricated photonic devices, where such large surface features can affect the interaction with confined optical fields and the quality of the single-photon emission. In particular, we anticipate using this approach to screen quantum dots not only based on their optical properties, but also their surrounding surface topographies.
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Submitted 6 December, 2016;
originally announced December 2016.
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Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide
Authors:
Raphaël S. Daveau,
Krishna C. Balram,
Tommaso Pregnolato,
** Liu,
Eun H. Lee,
** D. Song,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
Leonardo Midolo,
Søren Stobbe,
Kartik Srinivasan,
Peter Lodahl
Abstract:
Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupl…
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Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupler is recorded first on an independent device containing an on-chip reflector. Reflection measurements establish that the chip-to-fiber coupling efficiency exceeds 80 %. The detailed characterization of a high-efficiency photonic-crystal waveguide extended with a tapered out-coupling section is then performed. The corresponding overall single-photon source efficiency is 10.9 % $\pm$ 2.3 %, which quantifies the success probability to prepare an exciton in the quantum dot, couple it out as a photon in the waveguide, and subsequently transfer it to the fiber. The applied out-coupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources.
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Submitted 27 October, 2016;
originally announced October 2016.
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Acousto-optic and opto-acoustic modulation in piezo-optomechanical circuits
Authors:
Krishna C. Balram,
Marcelo I. Davanco,
B. Robert Ilic,
Ji-Hoon Kyhm,
** Dong Song,
Kartik Srinivasan
Abstract:
Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We…
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Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the RF carrier are mapped to the optical field. We also show opto-acoustic modulation, in which the application of optical pulses gates the transmission of propagating acoustic waves. The time-domain characteristics of this system under both pulsed RF and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modeled through the coupled mode equations of cavity optomechanics.
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Submitted 28 September, 2016;
originally announced September 2016.
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Indistinguishable single photons with flexible electronic triggering
Authors:
Adetunmise C. Dada,
Ted S. Santana,
Ralph N. E. Malein,
Antonios Koutroumanis,
Yong Ma,
Joanna M. Zajac,
Ju Y. Lim,
** D. Song,
Brian D. Gerardot
Abstract:
A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum c…
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A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum circuit or network will trigger the generation of an indistinguishable photon. Further, operating the photon source up to the limit imposed by its lifetime is desirable. Here, we report on the application of a true on-demand approach in which we can electronically trigger the precise arrival time of a single photon as well as control the excitation pulse duration based on resonance fluorescence from a single InAs/GaAs quantum dot. We investigate in detail the effect of the finite duration of an excitation $π$ pulse on the degree of photon antibunching. Finally, we demonstrate that highly indistinguishable single photons can be generated using this on-demand approach, enabling maximum flexibility for future applications.
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Submitted 6 May, 2016; v1 submitted 7 January, 2016;
originally announced January 2016.
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Coherent coupling between radio frequency, optical, and acoustic waves in piezo-optomechanical circuits
Authors:
Krishna C. Balram,
Marcelo Davanco,
** Dong Song,
Kartik Srinivasan
Abstract:
The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipula…
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The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency field through the piezo-electric effect, or optically through the strong photoelastic effect. We use this to demonstrate a novel acoustic wave interference effect, analogous to coherent population trap** in atomic systems, in which the coherent mechanical motion induced by the electrical drive can be completely cancelled out by the optically-driven motion. The ability to manipulate cavity optomechanical systems with equal facility through either photonic or phononic channels enables new device and system architectures for signal transduction between the optical, electrical, and mechanical domains.
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Submitted 6 August, 2015;
originally announced August 2015.
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Single-photon nonlinear optics with a quantum dot in a waveguide
Authors:
A. Javadi,
I. Söllner,
M. Arcari,
S. L. Hansen,
L. Midolo,
S. Mahmoodian,
G. Kiršanskė,
T. Pregnolato,
E. H. Lee,
J. D. Song,
S. Stobbe,
P. Lodahl
Abstract:
Strong nonlinear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, nonlinear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitt…
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Strong nonlinear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, nonlinear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitter, and highly correlated many-photon states may be created . Here we show that a single quantum dot in a photonic-crystal waveguide can be utilized as a giant nonlinearity sensitive at the single-photon level. The nonlinear response is revealed from the intensity and quantum statistics of the scattered photons, and contains contributions from an entangled photon-photon bound state. The quantum nonlinearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.
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Submitted 26 April, 2015;
originally announced April 2015.
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Moving boundary and photoelastic coupling in GaAs optomechanical resonators
Authors:
Krishna C. Balram,
M. Davanco,
Ju Young Lim,
** Dong Song,
K. Srinivasan
Abstract:
Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact, quantified by the coupling rate $g_{0}$. Here, we develop GaAs optomechanical resonators and investigate the moving dielectric boundary and photoelastic contribution…
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Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact, quantified by the coupling rate $g_{0}$. Here, we develop GaAs optomechanical resonators and investigate the moving dielectric boundary and photoelastic contributions to $g_{0}$. First, we consider coupling between the fundamental radial breathing mechanical mode and a 1550 nm band optical whispering gallery mode in microdisks. For decreasing disk radius from $R=5$ $μ$m to $R=1$ $μ$m, simulations and measurements show that $g_{0}$ changes from being dominated by the moving boundary contribution to having an equal photoelastic contribution. Next, we design and demonstrate nanobeam optomechanical crystals in which a $2.5$ GHz mechanical breathing mode couples to a 1550 nm optical mode predominantly through the photoelastic effect. We show a significant (30 $\%$) dependence of $g_{0}$ on the device's in-plane orientation, resulting from the difference in GaAs photoelastic coefficients along different crystalline axes, with fabricated devices exhibiting $g_{\text{0}}/2π$ as high as 1.1 MHz for orientation along the [110] axis. GaAs nanobeam optomechanical crystals are a promising system which can combine the demonstrated large optomechanical coupling strength with additional functionality, such as piezoelectric actuation and incorporation of optical gain media.
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Submitted 22 September, 2014;
originally announced September 2014.
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Deterministic photon-emitter coupling in chiral photonic circuits
Authors:
Immo Söllner,
Sahand Mahmoodian,
Sofie Lindskov Hansen,
Leonardo Midolo,
Alisa Javadi,
Gabija Kiršanskė,
Tommaso Pregnolato,
Haitham El-Ella,
Eun Hye Lee,
** Dong Song,
Søren Stobbe,
Peter Lodahl
Abstract:
The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interacti…
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The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interaction between light and matter. Adding chiral functionalities to nanophotonic waveguides lead to new opportunities enabling integrated and robust quantum-photonic devices or the observation of novel topological photonic states. In a regular waveguide, a quantum emitter radiates photons in either of two directions, and photon emission and absorption are reverse processes. This symmetry is violated in nanophotonic structures where a non-transversal local electric field implies that both photon emission and scattering may become directional. Here we experimentally demonstrate that the internal state of a quantum emitter determines the chirality of single-photon emission in a specially engineered photonic-crystal waveguide. Single-photon emission into the waveguide with a directionality of more than 90\% is observed under conditions where practically all emitted photons are coupled to the waveguide. Such deterministic and highly directional photon emission enables on-chip optical diodes, circulators operating at the single-photon level, and deterministic quantum gates. Based on our experimental demonstration, we propose an experimentally achievable and fully scalable deterministic photon-photon CNOT gate, which so far has been missing in photonic quantum-information processing where most gates are probabilistic.
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Submitted 12 January, 2015; v1 submitted 17 June, 2014;
originally announced June 2014.
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Near-unity coupling efficiency of a quantum emitter to a photonic-crystal waveguide
Authors:
M. Arcari,
I. Söllner,
A. Javadi,
S. Lindskov Hansen,
S. Mahmoodian,
J. Liu,
H. Thyrrestrup,
E. H. Lee,
J. D. Song,
S. Stobbe,
P. Lodahl
Abstract:
A quantum emitter efficiently coupled to a nanophotonic waveguide constitutes a promising system for the realization of single-photon transistors, quantum-logic gates based on giant single-photon nonlinearities, and high bit-rate deterministic single-photon sources. The key figure of merit for such devices is the $β$-factor, which is the probability for an emitted single photon to be channeled int…
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A quantum emitter efficiently coupled to a nanophotonic waveguide constitutes a promising system for the realization of single-photon transistors, quantum-logic gates based on giant single-photon nonlinearities, and high bit-rate deterministic single-photon sources. The key figure of merit for such devices is the $β$-factor, which is the probability for an emitted single photon to be channeled into a desired waveguide mode. We report on the experimental achievement of $β= 98.43 \pm 0.04\%$ for a quantum dot coupled to a photonic-crystal waveguide, corresponding to a single-emitter cooperativity of $η= 62.7 \pm 1.5$. This constitutes a nearly ideal photon-matter interface where the quantum dot acts effectively as a 1D "artificial" atom, since it interacts almost exclusively with just a single propagating optical mode. The $β$-factor is found to be remarkably robust to variations in position and emission wavelength of the quantum dots. Our work demonstrates the extraordinary potential of photonic-crystal waveguides for highly efficient single-photon generation and on-chip photon-photon interaction.
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Submitted 26 September, 2014; v1 submitted 10 February, 2014;
originally announced February 2014.
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Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy
Authors:
Petru Tighineanu,
Raphaël Daveau,
Eun Hye Lee,
** Dong Song,
Søren Stobbe,
Peter Lodahl
Abstract:
We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for str…
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We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for strongly-confined excitons, in contrast to the theoretical prediction that excitons in large quantum dots exhibit the so-called giant oscillator strength. We attribute these findings to localized ground-state excitons in potential minima created by material intermixing during growth. We provide further evidence for the strong-confinement regime of excitons by extracting the size of electron and hole wavefunctions from the phonon-broadened photoluminescence spectra. Furthermore, we explore the temperature dependence of the decay dynamics and, for some quantum dots, observe a pronounced reduction in the effective transition strength with temperature. We quantify and explain these effects as being an intrinsic property of large quantum dots owing to thermal excitation of the ground-state exciton. Our results provide a detailed understanding of the optical properties of large quantum dots in general, and of quantum dots grown by droplet epitaxy in particular.
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Submitted 4 April, 2014; v1 submitted 28 June, 2013;
originally announced June 2013.
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Fabrication and tuning of plasmonic optical nanoantennas around droplet epitaxy quantum dots by cathodoluminescence
Authors:
Gilles Nogues,
Quentin Merotto,
Guillaume BACHELIER,
Eun Hye Lee,
** Dong Song
Abstract:
We use cathodoluminescence to locate droplet epitaxy quantum dots with a precision $\lesssim$ nm before fabricating nanoantennas in their vicinity by electron-beam lithography. Cathodoluminescence is further used to evidence the effect of the antennas as a function of their length on the light emitted by the dot. Experimental results are in good agreement with numerical simulations of the structur…
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We use cathodoluminescence to locate droplet epitaxy quantum dots with a precision $\lesssim$ nm before fabricating nanoantennas in their vicinity by electron-beam lithography. Cathodoluminescence is further used to evidence the effect of the antennas as a function of their length on the light emitted by the dot. Experimental results are in good agreement with numerical simulations of the structures.
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Submitted 12 June, 2013;
originally announced June 2013.