Showing 1–13 of 13 results for author: Son, N T

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

Authors: Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Igor A. Abrikosov, Nguyen T. Son, Ivan G. Ivanov

Abstract: In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications in quantum technology, the divacancy and the nitrogen-vacancy pair. We show that the photoluminescence (PL) of the axial configurations of higher symmetry (C3v) than the basal ones (C1h) can be cancelled using any excita… ▽ More In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications in quantum technology, the divacancy and the nitrogen-vacancy pair. We show that the photoluminescence (PL) of the axial configurations of higher symmetry (C3v) than the basal ones (C1h) can be cancelled using any excitation (resonant or non-resonant) with polarization parallel to the crystal axis (EL||c). The polarization selection rules are determined using group-theoretical analysis and simple physical arguments showing that phonon-assisted absorption with EL||c is prohibited despite being formally allowed by group theory. A comparison with the selection rules for the silicon vacancy, another defect with C3v symmetry, is also carried out. Using the selection rules, we demonstrate selective excitation of only one basal divacancy configuration in 4H-SiC, the P3 line and discuss the higher contrast and increased Debye-Waller factor in the selectively excited spectrum. △ Less

Submitted 25 November, 2023; originally announced November 2023.

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Authors: Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot, Nguyen Tien Son, Ivan G. Ivanov, Thomas Astner, Philipp Koller, Misagh Ghezellou, Jawad Ul-Hassan, Daniel White, Christiaan Bekker, Guido Burkard, Michael Trupke, Cristian Bonato

Abstract: Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitte… ▽ More Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks. △ Less

Submitted 24 November, 2023; v1 submitted 2 May, 2023; originally announced May 2023.

Comments: 29 pages, 20 figures, 2 tables

Journal ref: Nat Commun 14, 8448 (2023)

Broadband single-mode planar waveguides in monolithic 4H-SiC

Authors: Tom Bosma, Joop Hendriks, Misagh Ghezellou, Nguyen T. Son, Jawad Ul-Hassan, Caspar H. van der Wal

Abstract: Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavit… ▽ More Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide. △ Less

Submitted 22 February, 2022; originally announced February 2022.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131, 025703 (2022) and may be found at https://aip.scitation.org/doi/10.1063/5.0077164

Journal ref: Journal of Applied Physics 131, 025703 (2022)

Five-second coherence of a single spin with single-shot readout in silicon carbide

Authors: Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon, Alexandre Bourassa, Yu **, Yizhi Zhu, Christian Vorwerk, Alexander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen T. Son, Giulia Galli, David D. Awschalom

Abstract: An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selec… ▽ More An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selection, resulting in a high signal-to-noise ratio (SNR) that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system. The map** of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices. △ Less

Submitted 5 October, 2021; v1 submitted 4 October, 2021; originally announced October 2021.

Comments: 18 pages, 5 figures

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Authors: Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin, Di Liu, Vadim Vorobyov, Matthias Niethammer, Matthias Widmann, Tobias Linkewitz, Rainer Stöhr, Heiko B. Weber, Takeshi Ohshima, Misagh Ghezellou, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, Jörg Wrachtrup

Abstract: Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical in… ▽ More Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlap** emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications. △ Less

Submitted 12 March, 2021; v1 submitted 10 March, 2021; originally announced March 2021.

Comments: 7 pages, 4 figures

Journal ref: Applied Physics Letters 118, 144003 (2021)

Bright single photon sources in lateral silicon carbide light emitting diodes

Authors: Matthias Widmann, Matthias Niethammer, Takahiro Makino, Torsten Rendler, Stefan Lasse, Takeshi Ohshima, Jawad Ul Hassan, Nguyen Tien Son, Sang-Yun Lee, Jörg Wrachtrup

Abstract: Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine… ▽ More Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources. △ Less

Submitted 3 July, 2020; originally announced July 2020.

Entanglement and control of single quantum memories in isotopically engineered silicon carbide

Authors: Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao, Mykyta Onizhuk, He Ma, Alexander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen T. Son, Giulia Galli, David D. Awschalom

Abstract: Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nu… ▽ More Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nuclear spins and present an ab initio method to predict the optimal isotopic fraction which maximizes the number of usable nuclear memories. We bolster these results by reporting high-fidelity electron spin control (F=99.984(1)%), alongside extended coherence times (T2=2.3 ms, T2DD>14.5 ms), and a >40 fold increase in dephasing time (T2*) from isotopic purification. Overall, this work underlines the importance of controlling the nuclear environment in solid-state systems and provides milestone demonstrations that link single photon emitters with nuclear memories in an industrially scalable material. △ Less

Submitted 15 May, 2020; originally announced May 2020.

Comments: 25 pages, 5 figures

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Authors: Daniil M. Lukin, Alexander D. White, Rahul Trivedi, Melissa A. Guidry, Naoya Morioka, Charles Babin, Öney O. Soykal, Jawad Ul Hassan, Nguyen Tien Son, Takeshi Ohshima, Praful K. Vasireddy, Mamdouh H. Nasr, Shuo Sun, Jean-Phillipe W. MacLean, Constantin Dory, Emilio A. Nanni, Jörg Wrachtrup, Florian Kaiser, Jelena Vučković

Abstract: The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose t… ▽ More The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons. △ Less

Submitted 27 July, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: 9 pages, 6 figures; Supplementary Information

Journal ref: npj Quantum Inf 6, 80 (2020)

Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide

Authors: Péter Udvarhelyi, Gergő Thiering, Naoya Morioka, Charles Babin, Florian Kaiser, Daniil Lukin, Takeshi Ohshima, Jawad Ul-Hassan, Nguyen Tien Son, Jelena Vučković, Jörg Wrachtrup, Adam Gali

Abstract: Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the t… ▽ More Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain polaronic gap around 5 and 22~meV for V1 and V2 centers, respectively, that results in significant difference in the temperature dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon-line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects. △ Less

Submitted 18 April, 2020; v1 submitted 8 January, 2020; originally announced January 2020.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. Applied 13, 054017 (2020)

Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Authors: Carmem M. Gilardoni, Tom Bosma, Danny van Hien, Freddie Hendriks, Björn Magnusson, Alexandre Ellison, Ivan G. Ivanov, N. T. Son, Caspar H. van der Wal

Abstract: Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spi… ▽ More Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K. △ Less

Submitted 10 December, 2019; originally announced December 2019.

Journal ref: New Journal of Physics, 22 (2020)

Quantum well stabilized point defect spin qubits

Authors: Ivády, J. Davidsson, N. Delegan, A. L. Falk, P. V. Klimov, S. J. Whiteley, S. O. Hruszkewycz, M. V. Holt, F. J. Heremans, N. T. Son, D. D. Awschalom, I. A. Abrikosov, A. Gali

Abstract: Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engine… ▽ More Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits. △ Less

Submitted 21 April, 2020; v1 submitted 28 May, 2019; originally announced May 2019.

Journal ref: Nat Commun 10, 5607 (2019)

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Authors: Matthias Niethammer, Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Shinobu Onoda, Takeshi Ohshima, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien Son, Jörg Wrachtrup

Abstract: Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limite… ▽ More Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices. △ Less

Submitted 28 March, 2019; originally announced March 2019.

Journal ref: Nature Communications vol 10, 5569 (2019)

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Authors: Marina Radulaski, Matthias Widmann, Matthias Niethammer, **gyuan Linda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzén, Takeshi Ohshima, Jörg Wrachtrup, Jelena Vučković

Abstract: Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated… ▽ More Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits. △ Less

Submitted 25 February, 2017; v1 submitted 8 December, 2016; originally announced December 2016.

Comments: 18 pages, 8 figures

Journal ref: Nano Letters 17 (3), 1782-1786 (2017)