Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon
Authors:
Alexander V. Bulgakov,
Juraj Sládek,
Jan Hrabovský,
Inam Mirza,
Wladimir Marine,
Nadezhda M. Bulgakova
Abstract:
A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are co…
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A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are compared with monochromatic pulses of the same total energy. Particular attention is given to low-fluence irradiation regimes when the energy densities in each pulse are below the ablation threshold and thus no shielding of the subsequent pulse by the ablation products occurs. The sequence order of pulses is demonstrated to be essential in bi-color ablation with higher material removal rates when a shorter-wavelength pulse arrives first at the surface. At long delays of 30-100 ps, the dual-wavelength ablation is found to be particularly strong with the formation of deep smooth craters. This is explained by the expansion of a hot liquid layer produced by the first pulse with a drastic decrease in the surface reflectivity at this timescale. The results provide insight into the processes of dual-wavelength laser ablation offering a better control of the energy deposition into material.
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Submitted 24 February, 2024;
originally announced February 2024.
The curvature-induced magnetization in CrI3 bilayer: flexomagnetic effect enhancement in van der Waals antiferromagnets
Authors:
Lei Qiao,
Jan Sladek,
Vladimir Sladek,
Alexey S. Kaminskiy,
Alexander P. Pyatakov,
Wei Ren
Abstract:
The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced magnetization, is also possible in this material. In the present paper, based on the first principle calculations, we estimate the flexomagnetic effect to be 200 μBÅ t…
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The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced magnetization, is also possible in this material. In the present paper, based on the first principle calculations, we estimate the flexomagnetic effect to be 200 μBÅ that is two orders of magnitude higher than it was predicted for the referent antiperovskite flexomagnetic material Mn3GaN. The two major factors of flexomagnetic effect enhancement related to the peculiarities of antiferromagnetic structure of van der Waals magnets is revealed: the strain-dependent ferromagnetic coupling in each layer and large interlayer distance separating antiferromagnetically coupled ions. Since 2D systems are naturally prone to mechanical deformation, the emerging field of flexomagnetism is of special interest for application in spintronics of van der Waals materials and straintronics in particular.
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Submitted 11 July, 2023;
originally announced July 2023.
