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Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications
Authors:
Daniele Nazzari,
Lukas Wind,
Masiar Sistani,
Dominik Mayr,
Kihye Kim,
Walter M. Weber
Abstract:
Artificial neural networks (ANNs) have had an enormous impact on a multitude of sectors, from research to industry, generating an unprecedented demand for tailor-suited hardware platforms. Their training and execution is highly memory-intensive, clearly evidencing the limitations affecting the currently available hardware based on the von Neumann architecture, which requires frequent data shuttlin…
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Artificial neural networks (ANNs) have had an enormous impact on a multitude of sectors, from research to industry, generating an unprecedented demand for tailor-suited hardware platforms. Their training and execution is highly memory-intensive, clearly evidencing the limitations affecting the currently available hardware based on the von Neumann architecture, which requires frequent data shuttling due to the physical separation of logic and memory units. This does not only limit the achievable performances but also greatly increases the energy consumption, hindering the integration of ANNs into low-power platforms. New Logic in Memory (LiM) architectures, able to unify memory and logic functionalities into a single component, are highly promising for overcoming these limitations, by drastically reducing the need of data transfers. Recently, it has been shown that a very flexible platform for logic applications can be realized recurring to a multi-gated Schottky-Barrier Field Effect Transistor (SBFET). If equipped with memory capabilities, this architecture could represent an ideal building block for versatile LiM hardware. To reach this goal, here we investigate the integration of a ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) layer onto Dual Top Gated SBFETs. We demonstrate that HZO polarization charges can be successfully employed to tune the height of the two Schottky barriers, influencing the injection behavior, thus defining the transistor mode, switching it between n and p-type transport. The modulation strength is strongly dependent on the polarization pulse height, allowing for the selection of multiple current levels. All these achievable states can be well retained over time, thanks to the HZO stability. The presented result show how ferroelectric-enhanced SBFETs are promising for the realization of novel LiM hardware, enabling low-power circuits for ANNs execution.
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Submitted 30 April, 2024;
originally announced April 2024.
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Surface Protection and Activation of Mid-IR Plasmonic Waveguides for Spectroscopy of Liquids
Authors:
Mauro David,
Ismael C. Doganlar,
Daniele Nazzari,
Elena Arigliani,
Dominik Wacht,
Masiar Sistani,
Hermann Detz,
Georg Ramer,
Bernhard Lendl,
Walter M. Weber,
Gottfried Strasser,
Borislav Hinkov
Abstract:
Liquid spectroscopy in the mid-infrared spectral range is a very powerful, yet premature technique for selective and sensitive molecule detection. Due to the lack of suitable concepts and materials for versatile miniaturized sensors, it is often still limited to bulky systems and offline analytics. Mid-infrared plasmonics is a promising field of current research for such compact and surface-sensit…
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Liquid spectroscopy in the mid-infrared spectral range is a very powerful, yet premature technique for selective and sensitive molecule detection. Due to the lack of suitable concepts and materials for versatile miniaturized sensors, it is often still limited to bulky systems and offline analytics. Mid-infrared plasmonics is a promising field of current research for such compact and surface-sensitive structures, enabling new pathways for much-needed photonic integrated sensors. In this work, we focus on extending the concept of Ge/Au-based mid-infrared plasmonic waveguides to enable broadband liquid detection. Through the implementation of high-quality dielectric passivation layers deposited by atomic layer deposition (ALD), we cover the weak and water-soluble Ge native oxide. We show that approximately 10 nm of e.g. Al2O3 or ZrO2 can already protect the plasmonic waveguides for up to 90 min of direct water exposure. This unlocks integrated sensing schemes for broadband molecule detection based on mid-infrared plasmonics. In a proof-of-concept experiment, we further demonstrate that the ZrO2 coated waveguides can be activated by surface functionalization, allowing the selective measurement of diethyl ether at a wavelength of 9.38 μm.
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Submitted 25 May, 2023;
originally announced May 2023.
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Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures
Authors:
Nadine Gächter,
Fabian Könemann,
Masiar Sistani,
Maximilian G. Bartmann,
Marilyne Sousa,
Philipp Staudinger,
Alois Lugstein,
Bernd Gotsmann
Abstract:
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical cu…
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The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.
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Submitted 28 June, 2020;
originally announced June 2020.
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Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions
Authors:
Masiar Sistani,
Maximilian G. Bartmann,
Nicholas A. Güsken,
Rupert F. Oulton,
Hamid Keshmiri,
Minh Anh Luong,
Zahra Sadre-Momtaz,
Martien I. den Hertog,
Alois Lugstein
Abstract:
Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultra-scaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photo-catalysis and photo-detection. However, a detailed understanding of plasmonic hot carrier generation and particularl…
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Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultra-scaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photo-catalysis and photo-detection. However, a detailed understanding of plasmonic hot carrier generation and particularly the transfer at metal-semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal-semiconductor (Al-Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal-semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al-Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge leading to negative differential resistance.
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Submitted 15 June, 2020;
originally announced June 2020.
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In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots
Authors:
M. Luong,
E. Robin,
N. Pauc,
P. Gentile,
M. Sistani,
A. Lugstein,
M Spies,
B Fernandez,
M. den Hertog
Abstract:
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the size becomes sufficiently small. In the search for high performance devices without variability, it is of high interest to allow deterministic fabrication of n…
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Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the size becomes sufficiently small. In the search for high performance devices without variability, it is of high interest to allow deterministic fabrication of nanowire quantum dots, avoiding sample variability and obtaining atomic scale precision on the fabricated dot size. In this paper, we present a reliable fabrication process to produce sub-10 nm Ge quantum dots (QDs), using a combination of ex-situ thermal annealing via rapid thermal annealing (RTA) and in-situ Joule heating technique in a transmission electron microscope (TEM). First we present in-situ direct joule heating experiments showing how the heating electrode could be damaged due to the formation of Al crystals and voids at the vicinity of the metal/NW contact, likely related with electro-migration phenomena. We show that the contact quality can be preserved by including an additional ex-situ RTA step prior to the in-situ heating. The in-situ observations also show in real-time how the exchange reaction initiates simultaneously from several locations underneath the Al contact pad, and the Al crystal grows gradually inside the initial Ge NW with the growth interface along a Ge(111) lattice plane. Once the reaction front moves out from underneath the contact metal, two factors jeopardize an atomically accurate control of the Al/Ge reaction interface. We observed a local acceleration of the reaction interface due to the electron beam irradiation in the transmission electron microscope as well as the appearance of large jumps of the interface in unpassivated Ge wires while a smooth advancement of the reaction interface was observed in wires with an Al2O3 protecting shell on the surface. Carefully controlling all aspects of the exchange reaction, we demonstrate a fabrication process combining ex-situ and in-situ heating techniques to precisely control and produce axial Al/Ge/Al NW heterostructures with an ultra-short Ge segment down to 8 nanometers. Practically, the scaling down of Ge segment length is only limited by the microscope resolution.
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Submitted 24 January, 2020;
originally announced January 2020.
