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Simulating nonlinear optical processes on a superconducting quantum device
Authors:
Yuan Shi,
Bram Evert,
Amy F. Brown,
Vinay Tripathi,
Eyob A. Sete,
Vasily Geyko,
Yu** Cho,
Jonathan L DuBois,
Daniel Lidar,
Ilon Joseph,
Matt Reagor
Abstract:
Simulating plasma physics on quantum computers is difficult, because most problems of interest are nonlinear, but quantum computers are not naturally suitable for nonlinear operations. In weakly nonlinear regimes, plasma problems can be modeled as wave-wave interactions. In this paper, we develop a quantization approach to convert nonlinear wave-wave interaction problems to Hamiltonian simulation…
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Simulating plasma physics on quantum computers is difficult, because most problems of interest are nonlinear, but quantum computers are not naturally suitable for nonlinear operations. In weakly nonlinear regimes, plasma problems can be modeled as wave-wave interactions. In this paper, we develop a quantization approach to convert nonlinear wave-wave interaction problems to Hamiltonian simulation problems. We demonstrate our approach using two qubits on a superconducting device. Unlike a photonic device, a superconducting device does not naturally have the desired interactions in its native Hamiltonian. Nevertheless, Hamiltonian simulations can still be performed by decomposing required unitary operations into native gates. To improve experimental results, we employ a range of error mitigation techniques. Apart from readout error mitigation, we use randomized compilation to transform undiagnosed coherent errors into well-behaved stochastic Pauli channels. Moreover, to compensate for stochastic noise, we rescale exponentially decaying probability amplitudes using rates measured from cycle benchmarking. We carefully consider how different choices of product-formula algorithms affect the overall error and show how a trade-off can be made to best utilize limited quantum resources. This study provides a point example of how plasma problems may be solved on near-term quantum computing platforms.
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Submitted 18 June, 2024;
originally announced June 2024.
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Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
Authors:
David P. Pappas,
Mark Field,
Cameron Kopas,
Joel A. Howard,
Xiqiao Wang,
Ella Lachman,
Lin Zhou,
**su Oh,
Kameshwar Yadavalli,
Eyob A. Sete,
Andrew Bestwick,
Matthew J. Kramer,
Joshua Y. Mutus
Abstract:
We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongl…
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We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.
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Submitted 26 February, 2024; v1 submitted 14 January, 2024;
originally announced January 2024.
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Modular Superconducting Qubit Architecture with a Multi-chip Tunable Coupler
Authors:
Mark Field,
Angela Q. Chen,
Ben Scharmann,
Eyob A. Sete,
Feyza Oruc,
Kim Vu,
Valentin Kosenko,
Joshua Y. Mutus,
Stefano Poletto,
Andrew Bestwick
Abstract:
We use a floating tunable coupler to mediate interactions between qubits on separate chips to build a modular architecture. We demonstrate three different designs of multi-chip tunable couplers using vacuum gap capacitors or superconducting indium bump bonds to connect the coupler to a microwave line on a common substrate and then connect to the qubit on the next chip. We show that the zero-coupli…
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We use a floating tunable coupler to mediate interactions between qubits on separate chips to build a modular architecture. We demonstrate three different designs of multi-chip tunable couplers using vacuum gap capacitors or superconducting indium bump bonds to connect the coupler to a microwave line on a common substrate and then connect to the qubit on the next chip. We show that the zero-coupling condition between qubits on separate chips can be achieved in each design and that the relaxation rates for the coupler and qubits are not noticeably affected by the extra circuit elements. Finally, we demonstrate two-qubit gate operations with fidelity at the same level as qubits with a tunable coupler on a single chip. Using one or more indium bonds does not degrade qubit coherence or impact the performance of two-qubit gates.
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Submitted 1 March, 2024; v1 submitted 17 August, 2023;
originally announced August 2023.
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Manufacturing low dissipation superconducting quantum processors
Authors:
Ani Nersisyan,
Stefano Poletto,
Nasser Alidoust,
Riccardo Manenti,
Russ Renzas,
Cat-Vu Bui,
Kim Vu,
Tyler Whyland,
Yuvraj Mohan,
Eyob A. Sete,
Sam Stanwyck,
Andrew Bestwick,
Matthew Reagor
Abstract:
Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels are present in a system with similar weight, resolution to distinguish relatively small changes is necessary to infer improvements to noise levels. For superconducting qubits, uncontrolled variation of nominal performance…
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Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels are present in a system with similar weight, resolution to distinguish relatively small changes is necessary to infer improvements to noise levels. For superconducting qubits, uncontrolled variation of nominal performance makes obtaining such resolution challenging. Here, we approach this problem by investigating specific combinations of previously reported fabrication techniques on the quality of 242 thin film superconducting resonators and qubits. Our results quantify the influence of elementary processes on dissipation at key interfaces. We report that an end-to-end optimization of the manufacturing process that integrates multiple small improvements together can produce an average ${\overline{T}_{1}=76\pm13~μ}$s across 24 qubits with the best qubits having ${T_1\geq110~μ}$s. Moreover, our analysis places bounds on energy decay rates for three fabrication-related loss channels present in state-of-the-art superconducting qubits. Understanding dissipation through such systematic analysis may pave the way for lower noise solid state quantum computers.
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Submitted 23 January, 2019;
originally announced January 2019.
