Showing 1–12 of 12 results for author: Schuller, I K

Voltage control of spin resonance in phase change materials

Authors: Tian-Yue Chen, Haowen Ren, Nareg Ghazikhanian, Ralph El Hage, Dayne Y. Sasaki, Pavel Salev, Yayoi Takamura, Ivan K. Schuller, Andrew D. Kent

Abstract: Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in spin excitations are also expected. The transition metal oxide La0.7Sr0.3MnO3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic in… ▽ More Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in spin excitations are also expected. The transition metal oxide La0.7Sr0.3MnO3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic insulator above room temperature. When LSMO is in its metallic phase a critical electrical bias has been shown to lead to an MIT that results in the formation of a paramagnetic resistive barrier transverse to the applied electric field. Using spin-transfer ferromagnetic resonance spectroscopy, we show that even for electrical biases less than the critical value that triggers the MIT, there is magnetic phase separation with the spin-excitation resonances varying systematically with applied bias. Thus, applied voltages provide a means to alter spin resonance characteristics of interest for neuromorphic circuits. △ Less

Submitted 17 June, 2024; originally announced June 2024.

The sounds of science a symphony for many instruments and voices part II

Authors: Gerard t Hooft, William D Phillips, Anton Zeilinger, Roland Allen, Jim Baggott, Francois R Bouchet, Solange M G Cantanhede, Lazaro A M Castanedo, Ana Maria Cetto, Alan A Coley, Bryan J Dalton, Peyman Fahimi, Sharon Franks, Alex Frano, Edward S Fry, Steven Goldfarb, Karlheinz Langanke, Cherif F Matta, Dimitri Nanopoulos, Chad Orzel, Sam Patrick, Viraj A A Sanghai, Ivan K Schuller, Oleg Shpyrko, Suzy Lidstrom

Abstract: Despite its amazing quantitative successes and contributions to revolutionary technologies, physics currently faces many unsolved mysteries ranging from the meaning of quantum mechanics to the nature of the dark energy that will determine the future of the Universe. It is clearly prohibitive for the general reader, and even the best informed physicists, to follow the vast number of technical paper… ▽ More Despite its amazing quantitative successes and contributions to revolutionary technologies, physics currently faces many unsolved mysteries ranging from the meaning of quantum mechanics to the nature of the dark energy that will determine the future of the Universe. It is clearly prohibitive for the general reader, and even the best informed physicists, to follow the vast number of technical papers published in the thousands of specialized journals. For this reason, we have asked the leading experts across many of the most important areas of physics to summarise their global assessment of some of the most important issues. In lieu of an extremely long abstract summarising the contents, we invite the reader to look at the section headings and their authors, and then to indulge in a feast of stimulating topics spanning the current frontiers of fundamental physics from The Future of Physics by William D Phillips and What characterises topological effects in physics? by Gerard t Hooft through the contributions of the widest imaginable range of world leaders in their respective areas. This paper is presented as a preface to exciting developments by senior and young scientists in the years that lie ahead, and a complement to the less authoritative popular accounts by journalists. △ Less

Submitted 17 April, 2024; originally announced April 2024.

Comments: 54 pages, 13 figures

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Authors: Elliot Kisiel, Pavel Salev, Ishwor Poudyal, Fellipe Baptista, Fanny Rodolakis, Zhan Zhang, Oleg Shpyrko, Ivan K. Schuller, Zahir Islam, Alex Frano

Abstract: Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavio… ▽ More Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavior are often limited due to time-consuming rastering which makes impractical many experiments aimed at investigating large spatial areas or temporal dynamics associated with the electrical triggering of the phase transition. Utilizing Dark Field X-ray Microscopy (DFXM), a novel full-field x-ray imaging technique, we study this complex filament formation process in-operando in VO2 devices from a structural perspective. We show that prior to filament formation, there is a significant gain of the metallic rutile phase beneath the metal electrodes that define the device. We observed that the filament formation follows a preferential path determined by the nucleation sites within the device. These nucleation sites are predisposed to the phase transition and can persistently maintain the high-temperature rutile phase even after returning to room temperature, which can enable a novel training/learning mechanism. Filament formation also appears to follow a preferential path determined by a nucleation site within the device which is predisposed to the rutile transition even after returning to room temperature. Finally, we found that small isolated low-temperature phase clusters can be present inside the high-temperature filaments indicating that the filament structure is not uniform. Our results provide a unique perspective on the electrically induced filament formation in metal-insulator transition materials, which further the basic understanding of this resistive switching. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Comments: 29 pages, 10 figures; 19 pages main text, 3 figures; 10 pages Supplementary material, 7 figures

Reconfigurable cascaded thermal neuristors for neuromorphic computing

Authors: Erbin Qiu, Yuan-Hang Zhang, Massimiliano Di Ventra, Ivan K. Schuller

Abstract: While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, we explore an alternative route based on a new class of spiking oscillators we call thermal neuristors, which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition in vanadium dioxide, we demonstrate a wide variety of rec… ▽ More While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, we explore an alternative route based on a new class of spiking oscillators we call thermal neuristors, which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition in vanadium dioxide, we demonstrate a wide variety of reconfigurable electrical dynamics mirroring biological neurons. Notably, inhibitory functionality is achieved just in a single oxide device, and cascaded information flow is realized exclusively through thermal interactions. To elucidate the underlying mechanisms of the neuristors, a detailed theoretical model is developed, which accurately reflects the experimental results. This study establishes the foundation for scalable and energy-efficient thermal neural networks, fostering progress in brain-inspired computing. △ Less

Submitted 5 October, 2023; v1 submitted 20 July, 2023; originally announced July 2023.

Quantum materials for energy-efficient neuromorphic computing

Authors: Axel Hoffmann, Shriram Ramanathan, Julie Grollier, Andrew D. Kent, Marcelo Rozenberg, Ivan K. Schuller, Oleg Shpyrko, Robert Dynes, Yeshaiahu Fainman, Alex Frano, Eric E. Fullerton, Giulia Galli, Vitaliy Lomakin, Shyue ** Ong, Amanda K. Petford-Long, Jonathan A. Schuller, Mark D. Stiles, Yayoi Takamura, Yimei Zhu

Abstract: Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, su… ▽ More Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems. △ Less

Submitted 4 April, 2022; originally announced April 2022.

Journal ref: APL Materials 10, 070904 (2022)

Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers

Authors: Christian T. Wolowiec, Juan Gabriel Ramírez, Min-Han Lee, Nicolas M. Vargas, Ali C. Basaran, Pavel Salev, Ivan K. Schuller

Abstract: We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromag… ▽ More We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film. △ Less

Submitted 23 December, 2021; originally announced December 2021.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Materials 6, 064408 (2022)

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Authors: Coline Adda, Min-Han Lee, Yoav Kalcheim, Pavel Salev, Rodolfo Rocco, Nicolas M. Vargas, Nareg Ghazikhanian, Marcelo Rozenberg, Ivan K. Schuller

Abstract: Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 device… ▽ More Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations. △ Less

Submitted 23 December, 2020; originally announced December 2020.

A hybrid optoelectronic Mott insulator

Authors: Henry Navarro, Javier del Valle, Yoav Kalcheim, Nicolas M. Vargas, Coline Adda, Minhan Lee, Pavel Lapa, Alberto Rivera-Calzada, Ivan Zaluzhnyy, Erbin Qiu, Oleg Shpyrko, Marcelo Rozenberg, Alex Frano, Ivan K. Schuller

Abstract: The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to hybridized functionalities based on external stimuli. However, the mechanisms of… ▽ More The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to hybridized functionalities based on external stimuli. However, the mechanisms of tunability and the sensitivity to external stimuli are determined by intrinsic material properties which are not always controllable. A Mott metal-insulator transition, which is technologically attractive due to the large changes in resistance, can be tuned by do**, strain, electric fields, and orbital occupancy but cannot be, in and of itself, controlled externally with light. Here we present a new approach to produce hybridized functionalities using a properly engineered photoconductor/strongly-correlated hybrid heterostructure, showing control of the Metal-to-Insulator transition (MIT) using optical means. This approach combines a photoconductor, which does not exhibit an MIT, with a strongly correlated oxide, which is not photoconducting. Due to the close proximity between the two materials, the heterostructure exhibits large volatile and nonvolatile, photoinduced resistivity changes and substantial photoinduced shifts in the MIT transition temperatures. This approach can potentially be extended to other judiciously chosen combinations of strongly correlated materials with systems which exhibit optically, electrically or magnetically controllable behavior. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

Authors: Matthias Lange, Stefan Guénon, Yoav Kalcheim, Theodor Luibrand, Nicolas Manuel Vargas, Dennis Schwebius, Reinhold Kleiner, Ivan K. Schuller, Dieter Koelle

Abstract: Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott-insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms were reported for such a system: electr… ▽ More Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott-insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms were reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V$_2$O$_3$ thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase-separation in the V$_2$O$_3$ thin film at the Mott-transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width $\lesssim$ 500\,nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects like oblique filaments, filament splitting, and hysteretic IVCs with sawtooth-like jumps at high currents in the low-resistance regime. We were able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching, in this case, is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties. △ Less

Submitted 17 June, 2021; v1 submitted 26 September, 2020; originally announced September 2020.

Comments: (18 pages, 12 figures)

A caloritronics-based Mott neuristor

Authors: Javier del Valle, Pavel Salev, Yoav Kalcheim, Ivan K. Schuller

Abstract: Machine learning imitates the basic features of biological neural networks to efficiently perform tasks such as pattern recognition. This has been mostly achieved at a software level, and a strong effort is currently being made to mimic neurons and synapses with hardware components, an approach known as neuromorphic computing. CMOS-based circuits have been used for this purpose, but they are non-s… ▽ More Machine learning imitates the basic features of biological neural networks to efficiently perform tasks such as pattern recognition. This has been mostly achieved at a software level, and a strong effort is currently being made to mimic neurons and synapses with hardware components, an approach known as neuromorphic computing. CMOS-based circuits have been used for this purpose, but they are non-scalable, limiting the device density and motivating the search for neuromorphic materials. While recent advances in resistive switching have provided a path to emulate synapses at the 10 nm scale, a scalable neuron analogue is yet to be found. Here, we show how heat transfer can be utilized to mimic neuron functionalities in Mott nanodevices. We use the Joule heating created by current spikes to trigger the insulator-to-metal transition in a biased VO2 nanogap. We show that thermal dynamics allow the implementation of the basic neuron functionalities: activity, leaky integrate-and-fire, volatility and rate coding. By using local temperature as the internal variable, we avoid the need of external capacitors, which reduces neuristor size by several orders of magnitude. This approach could enable neuromorphic hardware to take full advantage of the rapid advances in memristive synapses, allowing for much denser and complex neural networks. More generally, we show that heat dissipation is not always an undesirable effect: it can perform computing tasks if properly engineered. △ Less

Submitted 3 March, 2019; originally announced March 2019.

Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing

Authors: Javier del Valle, Juan Gabriel Ramírez, Marcelo J. Rozenberg, Ivan K. Schuller

Abstract: This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introducti… ▽ More This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. We discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain. △ Less

Submitted 31 October, 2018; originally announced December 2018.

Comments: To appear in Journal of Applied Physics. 43 pages

Improving sequencing by tunneling with multiplexing and cross-correlations

Authors: P. Boynton, A. V. Balatsky, I. K. Schuller, M. Di Ventra

Abstract: Sequencing by tunneling is a next-generation approach to read single-base information using electronic tunneling transverse to the single-stranded DNA (ssDNA) backbone while the latter is translocated through a narrow channel. The original idea considered a single pair of electrodes to read out the current and distinguish the bases [1, 2]. Here, we propose an improvement to the original sequencing… ▽ More Sequencing by tunneling is a next-generation approach to read single-base information using electronic tunneling transverse to the single-stranded DNA (ssDNA) backbone while the latter is translocated through a narrow channel. The original idea considered a single pair of electrodes to read out the current and distinguish the bases [1, 2]. Here, we propose an improvement to the original sequencing by tunneling method, in which $N$ pairs of electrodes are built in series along a synthetic nanochannel. While the ssDNA is forced through the channel using a longitudinal field it passes by each pair of electrodes for long enough time to gather a minimum of $m$ tunneling current measurements, where $m$ is determined by the level of sequencing error desired. Each current time series for each nucleobase is then cross-correlated together, from which the DNA bases can be distinguished. We show using random sampling of data from classical molecular dynamics, that indeed the sequencing error is significantly reduced as the number of pairs of electrodes, $N$, increases. Compared to the sequencing ability of a single pair of electrodes, cross-correlating $N$ pairs of electrodes is exponentially better due to the approximate log-normal nature of the tunneling current probability distributions. We have also used the Fenton-Wilkinson approximation to analytically describe the mean and variance of the cross-correlations that are used to distinguish the DNA bases. The method we suggest is particularly useful when the measurement bandwidth is limited, allowing a smaller electrode gap residence time while still promising to consistently identify the DNA bases correctly. △ Less

Submitted 21 September, 2015; v1 submitted 28 January, 2014; originally announced January 2014.

Comments: 8 pages, 4 figures

Journal ref: Journal of Computational Electronics 13 (2014) 794-800