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Post-fabrication tuning of circular Bragg resonators for enhanced emitter-cavity coupling
Authors:
Tobias M. Krieger,
Christian Weidinger,
Thomas Oberleitner,
Gabriel Undeutsch,
Michele B. Rota,
Naser Tajik,
Maximilian Aigner,
Quirin Buchinger,
Christian Schimpf,
Ailton J. Garcia Jr.,
Saimon F. Covre da Silva,
Sven Höfling,
Tobias Huber-Loyola,
Rinaldo Trotta,
Armando Rastelli
Abstract:
Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial…
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Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate ~16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.
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Submitted 27 September, 2023;
originally announced September 2023.
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Controlling the Photon Number Coherence of Solid-state Quantum Light Sources for Quantum Cryptography
Authors:
Yusuf Karli,
Daniel A. Vajner,
Florian Kappe,
Paul C. A. Hagen,
Lena M. Hansen,
René Schwarz,
Thomas K. Bracht,
Christian Schimpf,
Saimon F. Covre da Silva,
Philip Walther,
Armando Rastelli,
Vollrath Martin Axt,
Juan C. Loredo,
Vikas Remesh,
Tobias Heindel,
Doris E. Reiter,
Gregor Weihs
Abstract:
Quantum communication networks rely on quantum cryptographic protocols including quantum key distribution (QKD) using single photons. A critical element regarding the security of QKD protocols is the photon number coherence (PNC), i.e. the phase relation between the zero and one-photon Fock state, which critically depends on the excitation scheme. Thus, to obtain flying qubits with the desired pro…
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Quantum communication networks rely on quantum cryptographic protocols including quantum key distribution (QKD) using single photons. A critical element regarding the security of QKD protocols is the photon number coherence (PNC), i.e. the phase relation between the zero and one-photon Fock state, which critically depends on the excitation scheme. Thus, to obtain flying qubits with the desired properties, optimal pum** schemes for quantum emitters need to be selected. Semiconductor quantum dots generate on-demand single photons with high purity and indistinguishability. Exploiting two-photon excitation of a quantum dot combined with a stimulation pulse, we demonstrate the generation of high-quality single photons with a controllable degree of PNC. Our approach provides a viable route toward secure communication in quantum networks.
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Submitted 31 May, 2023;
originally announced May 2023.
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Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface
Authors:
Santanu Manna,
Huiying Huang,
Saimon Filipe Covre da Silva,
Christian Schimpf,
Michele B. Rota,
Barbara Lehner,
Marcus Reindl,
Rinaldo Trotta,
Armando Rastelli
Abstract:
Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passiva…
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Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.
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Submitted 5 February, 2022;
originally announced February 2022.
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Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
Authors:
Javier Martin-Sanchez,
Rinaldo Trotta,
Antonio Mariscal,
Rosalia Serna,
Giovanni Piredda,
Sandra Stroj,
Johannes Edlinger,
Christian Schimpf,
Johannes Aberl,
Thomas Lettner,
Johannes Wildmann,
Huiying Huang,
Xueyong Yuan,
Dorian Ziss,
Julian Stangl,
Armando Rastelli
Abstract:
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to…
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The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.
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Submitted 19 October, 2017;
originally announced October 2017.
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Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics
Authors:
Xueyong Yuan,
Fritz Weihausen-Brinkmann,
Javier Martín-Sánchez,
Giovanni Piredda,
Vlastimil Křápek,
Yongheng Huo,
Huiying Huang,
Christian Schimpf,
Oliver G. Schmidt,
Johannes Edlinger,
Gabriel Bester,
Rinaldo Trotta,
Armando Rastelli
Abstract:
The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that th…
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The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in plane uniaxial stress. By using piezoelectric strain actuators featuring strain-amplification we study the evolution of the selection rules and excitonic fine-structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry properties of the system. The experimental and computational results suggest that uniaxial stress, may be the right tool to obtain quantum light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.
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Submitted 10 October, 2018; v1 submitted 11 October, 2017;
originally announced October 2017.
