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Characterization of the low electric field and zero-temperature two-level-system loss in hydrogenated amorphous silicon
Authors:
Fabien Defrance,
Andrew D. Beyer,
Shibo Shu,
Jack Sayers,
Sunil R. Golwala
Abstract:
Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly important for loss in photolithographically fabricated superconducting mm-wave/THz transmission lines. For both lumped-element and transmission-line structures, native…
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Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly important for loss in photolithographically fabricated superconducting mm-wave/THz transmission lines. For both lumped-element and transmission-line structures, native amorphous surface oxide films are typically the sites of such TLS in non-microstripline geometries, while loss in the (usually amorphous) dielectric film itself usually dominates in microstriplines. We report here on the demonstration of low TLS loss at GHz frequencies in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconducting lumped-element resonators using parallel-plate capacitors (PPCs). The values we obtain from two recipes in different deposition machines, 7$\,\times\,10^{-6}$ and 12$\,\times\,10^{-6}$, improve on the best achieved in the literature by a factor of 2--4 for a-Si:H and are comparable to recent measurements of amorphous germanium. Moreover, we have taken care to extract the true zero-temperature, low-field loss tangent of these films, accounting for temperature and field saturation effects that can yield misleading results. Such robustly fabricated and characterized films render the use of PPCs with deposited amorphous films a viable architecture for superconducting resonators, and they also promise extremely low loss and high quality factor for photolithographically fabricated superconducting mm-wave/THz transmission lines used in planar antennas and resonant filters.
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Submitted 6 March, 2024;
originally announced March 2024.
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Flat silicon gradient index lens with deep reactive-ion-etched 3-layer anti-reflection structure for millimeter and submillimeter wavelengths
Authors:
Fabien Defrance,
Cecile Jung-Kubiak,
John Gill,
Sofia Rahiminejad,
Theodore Macioce,
Jack Sayers,
Goutam Chattopadhyay,
Sunil R. Golwala
Abstract:
We present the design, fabrication, and characterization of a 100 mm diameter, flat, gradient-index (GRIN) lens fabricated with high-resistivity silicon, combined with a three-layer anti-reflection (AR) structure optimized for 160-355 GHz. Multi-depth, deep reactive-ion etching (DRIE) enables patterning of silicon wafers with sub-wavelength structures (posts or holes) to locally change the effecti…
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We present the design, fabrication, and characterization of a 100 mm diameter, flat, gradient-index (GRIN) lens fabricated with high-resistivity silicon, combined with a three-layer anti-reflection (AR) structure optimized for 160-355 GHz. Multi-depth, deep reactive-ion etching (DRIE) enables patterning of silicon wafers with sub-wavelength structures (posts or holes) to locally change the effective refractive index and thus create anti-reflection layers and a radial index gradient. The structures are non-resonant and, for sufficiently long wavelengths, achromatic. Hexagonal holes varying in size with distance from the optical axis create a parabolic index profile decreasing from 3.15 at the center of the lens to 1.87 at the edge. The AR structure consists of square holes and cross-shaped posts. We have fabricated a lens consisting of a stack of five 525 $μ$m thick GRIN wafers and one AR wafer on each face. We have characterized the lens over the frequency range 220-330 GHz, obtaining behavior consistent with Gaussian optics down to -14 dB and transmittance between 75% and 100%.
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Submitted 10 May, 2024; v1 submitted 31 January, 2024;
originally announced January 2024.
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Hierarchical phased-array antennas coupled to Al KIDs: a scalable architecture for multi-band mm/submm focal planes
Authors:
Jean-Marc Martin,
Junhan Kim,
Fabien Defrance,
Shibo Shu,
Andrew D. Beyer,
Peter K. Day,
Jack Sayers,
Sunil R. Golwala
Abstract:
We present the optical characterization of two-scale hierarchical phased-array antenna kinetic inductance detectors (KIDs) for millimeter/submillimeter wavelengths. Our KIDs have a lumped-element architecture with parallel plate capacitors and aluminum inductors. The incoming light is received with a hierarchical phased array of slot-dipole antennas, split into 4 frequency bands (between 125 GHz a…
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We present the optical characterization of two-scale hierarchical phased-array antenna kinetic inductance detectors (KIDs) for millimeter/submillimeter wavelengths. Our KIDs have a lumped-element architecture with parallel plate capacitors and aluminum inductors. The incoming light is received with a hierarchical phased array of slot-dipole antennas, split into 4 frequency bands (between 125 GHz and 365 GHz) with on-chip lumped-element band-pass filters, and routed to different KIDs using microstriplines. Individual pixels detect light for the 3 higher frequency bands (190-365 GHz) and the signals from four individual pixels are coherently summed to create a larger pixel detecting light for the lowest-frequency band (125-175 GHz). The spectral response of the band-pass filters was measured using Fourier transform spectroscopy (FTS), the far-field beam pattern of the phased-array antennas was obtained using an infrared source mounted on a 2-axis translating stage, and the optical efficiency of the KIDs was characterized by observing loads at 294 K and 77 K. We report on the results of these three measurements.
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Submitted 30 January, 2024;
originally announced January 2024.
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A kinetic inductance detectors array design for high background conditions at 150 GHz
Authors:
Shibo Shu,
Jack Sayers,
Peter K. Day
Abstract:
We present a design for an array of kinetic inductance detectors (KIDs) integrated with phased array antennas for imaging at 150 GHz under high background conditions. The microstrip geometry KID detectors are projected to achieve photon noise limited sensitivity with larger than 100 pW absorbed optical power. Both the microstrip KIDs and the antenna feed network make use of a low-loss amorphous si…
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We present a design for an array of kinetic inductance detectors (KIDs) integrated with phased array antennas for imaging at 150 GHz under high background conditions. The microstrip geometry KID detectors are projected to achieve photon noise limited sensitivity with larger than 100 pW absorbed optical power. Both the microstrip KIDs and the antenna feed network make use of a low-loss amorphous silicon dielectric. A new aspect of the antenna implementation is the use of a NbTiN microstrip feed network to facilitate impedance matching to the 50 Ohm antenna. The array has 256 pixels on a 6-inch wafer and each pixel has two polarizations with two Al KIDs. The KIDs are designed with a half wavelength microstrip transmission line with parallel plate capacitors at the two ends. The resonance frequency range is 400 to 800 MHz. The readout feedline is also implemented in microstrip and has an impedance transformer from 50 Ohm to 9 Ohm at its input and output.
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Submitted 25 May, 2022; v1 submitted 10 December, 2021;
originally announced December 2021.
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Investigation of the Non-equilibrium State of Strongly Correlated Materials by Complementary Ultrafast Spectroscopy Techniques
Authors:
Hamoon Hedayat,
Charles J. Sayers,
Arianna Ceraso,
Jasper van Wezel,
Stephen R. Clark,
Claudia Dallera,
Giulio Cerullo,
Enrico Da Como,
Ettore Carpene
Abstract:
Photoinduced non-thermal phase transitions are new paradigms of exotic non-equilibrium physics of strongly correlated materials. An ultrashort optical pulse can drive the system to a new order through complex microscopic interactions that do not occur in the equilibrium state. Ultrafast spectroscopies are unique tools to reveal the underlying mechanisms of such transitions which lead to transient…
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Photoinduced non-thermal phase transitions are new paradigms of exotic non-equilibrium physics of strongly correlated materials. An ultrashort optical pulse can drive the system to a new order through complex microscopic interactions that do not occur in the equilibrium state. Ultrafast spectroscopies are unique tools to reveal the underlying mechanisms of such transitions which lead to transient phases of matter. Yet, their individual specificities often do not provide an exhaustive picture of the physical problem. One effective solution to enhance their performance is the integration of different ultrafast techniques. This provides an opportunity to simultaneously probe physical phenomena from different perspectives whilst maintaining the same experimental conditions. In this context, we performed complementary experiments by combining time-resolved reflectivity and time and angle-resolved photoemission spectroscopy. We demonstrated the advantage of this combined approach by investigating the complex charge density wave (CDW) phase in 1$\it{T}$-TiSe$_{2}$. Specifically, we show the key role of lattice degrees of freedom to establish and stabilize the CDW in this material.
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Submitted 4 December, 2020;
originally announced December 2020.
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Flat low-loss silicon gradient index lens for millimeter and submillimeter wavelengths
Authors:
Fabien Defrance,
Cecile Jung-Kubiak,
Sofia Rahiminejad,
Theodore Macioce,
Jack Sayers,
Jake Connors,
Simon Radford,
Goutam Chattopadhyay,
Sunil Golwala
Abstract:
We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by subwavelength holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very…
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We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by subwavelength holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very wide bandwidth, allowing the fabrication of achromatic lenses up to submillimeter wavelengths. The designed GRIN lens was successfully simulated and shows an expected efficiency better than that of a classic silicon plano-concave spherical lens with approximately the same thickness and focal length. Deep reactive ion etching (DRIE) and wafer-bonding of several patterned wafers will be used to realize our first GRIN lens prototype.
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Submitted 21 November, 2019;
originally announced November 2019.
