Showing 1–1 of 1 results for author: Sarnelli, E

Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

Authors: M. Campajola, F. Di Capua, D. Fiore, E. Sarnelli, A. Aloisio

Abstract: Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damag… ▽ More Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Comments: This is an author-created, un-copyedited version of an article accepted for publication/published in Nuclear Instruments and Methods in Physics Research Section A. The Version of Record is available online at https://doi.org/10.1016/j.nima.2019.162722

Journal ref: Nuclear Inst. and Methods in Physics Research, A 947 (2019) 162722