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Growth of large-sized relaxor ferroelectric PZN-PT single crystals by modified flux growth method
Authors:
P. Vijayakumar,
C. Manikandan,
R. M. Sarguna,
Edward Prabu Amaladass,
K. Ganesan,
Varsha Roy,
E. Varadarajan,
S. Ganesamoorthy
Abstract:
A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is maintained in the crucible base by flowing air at a controlled rate. This method restricts the number of spontaneously nucleated crystals at crucible bottom, reduc…
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A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is maintained in the crucible base by flowing air at a controlled rate. This method restricts the number of spontaneously nucleated crystals at crucible bottom, reduces loss of volatile PbO component and favours the growth of large-sized PZN-PT single crystals. Large-sized PZN-PT single crystals of dimensions ~ 22x20x14 mm3 are reproducibly grown by the proposed method. The electrical characteristics of the PZN-PT wafers oriented along the <100>, <010> and <001> directions are investigated. PZN-PT wafers oriented along the <001> direction exhibited superior piezoelectric coefficient (d33) of ~ 2221 pm/V. The homogeneity of the physical parameters is analysed by preparing 10 elements with dimensions of ~5x2.5x2.5 mm3 which were cut from single wafer oriented along the <001> direction. The ferro-, piezo- and dielectric characteristics of these wafers were found to be highly uniform with small standard deviation. The observation of d33 value with less than 2 % deviation from mean value confirms the growth of high quality PZN-PT single crystals.
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Submitted 11 December, 2023;
originally announced December 2023.
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Development of travelling heater method for growth of detector grade CdZnTe single crystals
Authors:
P. Vijayakumar,
Edward Prabu Amaladass K. Ganesan R. M. Sarguna,
Varsha Roy,
S. Ganesamoorthy
Abstract:
We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30 - 80 C/cm), high precision translation (1 - 25 mm per day) and rotation (1 - 50 rpm) assemblies to meet the stringent conditions that are ess…
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We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30 - 80 C/cm), high precision translation (1 - 25 mm per day) and rotation (1 - 50 rpm) assemblies to meet the stringent conditions that are essential to grow detector grade CdZnTe single crystals. Further, a load cell in the THM system enables continuous monitoring of the growth. Systematic growth experiments were performed to optimize the various growth parameters in order to achieve large grain single crystals. Herein, the effect of temperature gradient and growth rate on the increase in grain size is discussed in detail. Each successful growth experiment yields a minimum of four detector grade elements of dimensions 10 x 10 x 5 mm3 from a starting charge of 100 g of CdZnTe. The crystalline nature and quality of the detector elements were evaluated using Laue, NIR transmission spectroscopy and I-V characteristics. Crystals with resistivity greater than ~ 1-10 giga-ohm-cm were identified for testing gamma ray detection. The photo peak of 137Cs was resolved with an energy resolution of 4.2 % at 662 keV and its measured electron mobility lifetime product is found to be ~ 3.3 x 10-3 cm2/V. The demonstration of the gamma ray detection with a relatively high μτ product is the testimony to the successful growth of detector grade CdZnTe single crystals by an indigenously developed THM system.
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Submitted 11 December, 2023;
originally announced December 2023.
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Structural and optical properties of beta irradiated YAlO3 single crystals
Authors:
M. Suganya,
K. Ganesan,
P. Vijayakumar,
S. Jakathamani,
Amirdha Sher Gill,
O. Annalakshmi,
S. K. Srivastava,
R. M. Sarguna,
S. Ganesamoorthy
Abstract:
We report on the growth, structural and optical properties of YAlO3 single crystals grown by optical floating zone technique. Powder X-ray diffraction and Raman spectroscopic studies confirm the phase purity of the crystals. Raman analysis reveals that the intensity and line-width of Raman bands increase significantly with beta irradiation indicating the formation of structural defects in YAlO3 la…
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We report on the growth, structural and optical properties of YAlO3 single crystals grown by optical floating zone technique. Powder X-ray diffraction and Raman spectroscopic studies confirm the phase purity of the crystals. Raman analysis reveals that the intensity and line-width of Raman bands increase significantly with beta irradiation indicating the formation of structural defects in YAlO3 lattice. The optical properties are studied through UV-visible absorption, and photoluminescence emission and excitation spectroscopies under pre- and post- beta irradiation. The optical studies indicate the presence of Sm and Cr impurities by exhibiting characteristic emission lines in the orange red region. Further, a systematic study on the thermoluminescence (TL) characteristics of the crystal is also carried out at different doses of beta irradiation. The crystals exhibit a prominent TL glow peak at 239 C for less than 5 Gy doses while a weak second glow peak evolves at higher doses. Also, the crystals show a nearly linear dose response in the studied range from 0.1 to 10 Gy. The glow curve analysis reveals that the TL emission obeys the first order kinetics model. Based on the optical studies, the plausible mechanism for the TL glow curve is discussed in terms of the intrinsic defects and impurities that are present in the crystal.
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Submitted 5 June, 2020;
originally announced June 2020.
