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CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
Authors:
Marc Jaikissoon,
Çağıl Köroğlu,
Jerry A. Yang,
Kathryn M. Neilson,
Krishna C. Saraswat,
Eric Pop
Abstract:
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (complementary metal oxide semiconductor) compatible manner would radically improve the industrial viability of 2D transistors. Here, we show silicon nit…
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Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (complementary metal oxide semiconductor) compatible manner would radically improve the industrial viability of 2D transistors. Here, we show silicon nitride cap** layers can impart strain to monolayer MoS2 transistors on conventional silicon substrates, enhancing their electrical performance with a low thermal budget (350 °C), CMOS-compatible approach. Strained back-gated and dual-gated MoS2 transistors demonstrate median increases up to 60% and 45% in on-state current, respectively. The greatest improvements are found when both transistor channels and contacts are reduced to ~200 nm, reaching saturation currents of 488 uA/um, higher than any previous reports at such short contact pitch. Simulations reveal that most benefits arise from tensile strain lowering the contact Schottky barriers, and that further reducing device dimensions (including contacts) will continue to offer increased strain and performance improvements.
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Submitted 29 June, 2024; v1 submitted 15 May, 2024;
originally announced May 2024.
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Efficiency Limit of Transition Metal Dichalcogenide Solar Cells
Authors:
Koosha Nassiri Nazif,
Frederick U. Nitta,
Alwin Daus,
Krishna C. Saraswat,
Eric Pop
Abstract:
Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 s…
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Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 solar cells under AM 1.5 G illumination as a function of TMD film thickness and material quality. We use an extended version of the detailed balance method which includes Auger and defect-assisted Shockley-Reed-Hall recombination mechanisms in addition to radiative losses, calculated from measured optical absorption spectra. We demonstrate that single-junction solar cells with TMD films as thin as 50 nm could in practice achieve up to 25% power conversion efficiency with the currently available material quality, making them an excellent choice for high-specific-power photovoltaics.
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Submitted 24 July, 2023;
originally announced July 2023.
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Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier
Authors:
Raisul Islam,
Shengjun Qin,
Sanchit Deshmukh,
Zhouchangwan Yu,
Cagil Koroglu,
Asir Intisar Khan,
Kirstin Schauble,
Krishna C. Saraswat,
Eric Pop,
H. -S. Philip Wong
Abstract:
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between…
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Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V.
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Submitted 23 March, 2022;
originally announced March 2022.
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High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells
Authors:
Koosha Nassiri Nazif,
Alwin Daus,
Jiho Hong,
Nayeun Lee,
Sam Vaziri,
Aravindh Kumar,
Frederick Nitta,
Michelle Chen,
Siavash Kananian,
Raisul Islam,
Kwan-Ho Kim,
**-Hong Park,
Ada Poon,
Mark L. Brongersma,
Eric Pop,
Krishna C. Saraswat
Abstract:
Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional do** schemes have prevented most TMD solar cells from…
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Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional do** schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ cap** for do**, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.
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Submitted 24 June, 2021; v1 submitted 19 June, 2021;
originally announced June 2021.
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Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process
Authors:
David S. Sukhdeo,
Jan Petykiewicz,
Shashank Gupta,
Daeik Kim,
Sungdae Woo,
Youngmin Kim,
Jelena Vuckovic,
Krishna C. Saraswat,
Donguk Nam
Abstract:
We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk…
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We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects.
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Submitted 25 October, 2015;
originally announced October 2015.
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Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities
Authors:
Jan Petykiewicz,
Donguk Nam,
David S. Sukhdeo,
Shashank Gupta,
Sonia Buckley,
Alexander Y. Piggott,
Jelena Vučković,
Krishna C. Saraswat
Abstract:
A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudo-heterostructure, and high-Q optical cavity. Our light emitting structure presents gr…
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A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudo-heterostructure, and high-Q optical cavity. Our light emitting structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2,000. The emission wavelength is tuned over more than 400 nm with a single lithography step. We find increased optical gain in optical cavities formed with germanium under high (>2.3%) tensile strain. Through quantitative analysis of gain/loss mechanisms, we find that free carrier absorption from the hole bands dominates the gain, resulting in no net gain even from highly strained, n-type doped germanium.
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Submitted 5 August, 2015;
originally announced August 2015.
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Ultimate Limit of Biaxial Tensile Strain and N-Type Do** for Realizing an Efficient Low-Threshold Ge Laser
Authors:
David S. Sukhdeo,
Shashank Gupta,
Krishna C. Saraswat,
Birendra,
Dutt,
Donguk Nam
Abstract:
We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type do**. Our finding shows that there exist ultimate limits beyond which point no further benefit can be realized through increased tensile strain or n-type do**. Here were quantify these limits, showing that the op…
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We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type do**. Our finding shows that there exist ultimate limits beyond which point no further benefit can be realized through increased tensile strain or n-type do**. Here were quantify these limits, showing that the optimal design for minimizing threshold involves about 3.7% biaxial tensile strain and 2x1018 cm-3 n-type do**, whereas the optimal design for maximum slope efficiency involves about 2.3% biaxial tensile strain with 1x1019 cm-3 n-type do**. Increasing the strain and/or do** beyond these limits will degrade the threshold or slope efficiency, respectively.
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Submitted 2 July, 2015;
originally announced July 2015.
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Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources
Authors:
David S. Sukhdeo,
Krishna C. Saraswat,
Birendra,
Dutt,
Donguk Nam
Abstract:
We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it beco…
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We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it becomes a direct bandgap semiconductor, the ~1 ns defect-limited carrier lifetime of typical epitaxial Ge limits the LED internal quantum efficiency to less than 10%. In contrast, if the epitaxial Ge carrier lifetime can be increased to its bulk value, internal quantum efficiencies exceeding 90% become possible. For Ge lasers, we show that the defect-limited lifetime becomes increasing important as tensile strain is introduced, and that this defect-limited lifetime must be improved if the full benefits of strain are to be realized. We conversely show that improving the material quality supersedes much of the utility of n-type do** for Ge lasers.
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Submitted 29 June, 2015;
originally announced June 2015.
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Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser
Authors:
David S. Sukhdeo,
Shashank Gupta,
Krishna C. Saraswat,
Birendra Dutt,
Donguk Nam
Abstract:
We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain medium. This anomalous reduction is accompanied by an abrupt jump in the emission wavelength and is explained by how the light-hole band raises relative to the he…
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We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain medium. This anomalous reduction is accompanied by an abrupt jump in the emission wavelength and is explained by how the light-hole band raises relative to the heavy-hole band due to uniaxial strain. Approximately 3.2% uniaxial strain is required to achieve this anomalous threshold reduction for 1x1019 cm-3 n-type do**, and a complex interaction between uniaxial strain and n-type do** is observed. This anomalous threshold reduction represents a substantial performance advantage for uniaxially strained Ge lasers relative to other forms of Ge band engineering such as biaxial strain or tin alloying. Achieving this critical combination of uniaxial strain and do** for the anomalous threshold reduction is dramatically more relevant to practical devices than realizing a direct band gap.
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Submitted 28 June, 2015;
originally announced June 2015.
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Theoretical Modeling for the Interaction of Tin alloying with N-Type Do** and Tensile Strain for GeSn Lasers
Authors:
David S. Sukhdeo,
Krishna C. Saraswat,
Birendra,
Dutt,
Donguk Nam
Abstract:
We investigate the interaction of tin alloying with tensile strain and n-type do** for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect of tin alloying on conduction band changes, we calculate how threshold current density and slope efficiency are affected by tin alloying in the presence of tens…
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We investigate the interaction of tin alloying with tensile strain and n-type do** for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect of tin alloying on conduction band changes, we calculate how threshold current density and slope efficiency are affected by tin alloying in the presence of tensile strain and n-type do**. Our results show that while there exists a negative interaction between tin alloying and n-type do**, tensile strain can be effectively combined with tin alloying to dramatically improve the Ge gain medium in terms of both reducing the threshold and increasing the expected slope efficiency. Through quantitative modeling we find the best design to include large amounts of both tin alloying and tensile strain but only moderate amounts of n-type do** if researchers seek to achieve the best possible performance in a Ge-based laser.
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Submitted 28 June, 2015;
originally announced June 2015.
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A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics
Authors:
David S. Sukhdeo,
Donguk Nam,
Ju-Hyung Kang,
Mark L. Brongersma,
Krishna C. Saraswat
Abstract:
Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating a…
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Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to biaxially strained germanium lasers for silicon-compatible optical interconnects.
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Submitted 3 November, 2014;
originally announced November 2014.
