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Chiral Phase Change Nanomaterials
Authors:
Joshua A. Burrow,
Md Shah Alam,
Evan M. Smith,
Riad Yahiaoui,
Ryan Laing,
Piyush J. Shah,
Thomas A. Searles,
Shivashankar Vangala,
Joshua R. Hendrickson,
Andrew Sarangan,
Imad Agha
Abstract:
Chiral nanostructures offer the ability to respond to the vector nature of a light beam at the nanoscale. While naturally chiral materials offer a path towards scalability, engineered structures offer a path to wavelength tunability through geometric manipulation. Neither approach, however, allows for temporal control of chirality. Therefore, in the best of all worlds, it is crucial to realize chi…
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Chiral nanostructures offer the ability to respond to the vector nature of a light beam at the nanoscale. While naturally chiral materials offer a path towards scalability, engineered structures offer a path to wavelength tunability through geometric manipulation. Neither approach, however, allows for temporal control of chirality. Therefore, in the best of all worlds, it is crucial to realize chiral materials that possess the quality of scalability, tailored wavelength response, and dynamic control at high speeds. Here, a new class of intrinsically chiral phase change nanomaterials (PCNMs) is proposed and explored, based on a scalable bottom-up fabrication technique with a high degree of control in three dimensions. Angular resolved Mueller Matrix and spectroscopic ellipsometry are performed to characterize the optical birefringence and dichroism, and a numerical model is provided to explain the origin of optical activity. This work achieves the critical goal of demonstrating high-speed dynamic switching of chirality over 50,000 cycles via the underlying PCNM.
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Submitted 18 November, 2021;
originally announced November 2021.
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Polarization Selective Modulation of the Supercavity Resonance from Friedrich-Wintgen Bound States in the Continuum
Authors:
C. Kyaw,
R. Yahiaoui,
J. A. Burrow,
V. Tran,
K. Keelen,
W. Sims,
E. C. Red,
W. S. Rockward,
M. A. Thomas,
A. Sarangan,
I. Agha,
T. A. Searles
Abstract:
Bound states in the continuum (BICs) are widely studied for their ability to confine light, produce sharp resonances for sensing applications and serve as avenues for lasing action with topological characteristics. Recent experiments have demonstrated the existence of exotic modes which occur in off-$Γ$\ points not accessible by symmetry-protected BICs, Freidrich-Wintgen (FW) BICs. In previous wor…
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Bound states in the continuum (BICs) are widely studied for their ability to confine light, produce sharp resonances for sensing applications and serve as avenues for lasing action with topological characteristics. Recent experiments have demonstrated the existence of exotic modes which occur in off-$Γ$\ points not accessible by symmetry-protected BICs, Freidrich-Wintgen (FW) BICs. In previous works, FW BICs were formed by either varying the incident angle or through geometric manipulation. On the contrary, in this work we demonstrate the formation of FW BICs induced by different linear polarization states of incident terahertz waves. Furthermore, as predicted by theory, the position of the FW BIC region is verified to change as a function of asymmetry. This allows for a unique parameter, incident polarization, to induce the FW BIC and modulate the supercavity resonance with the degree of asymmetry. The polarization-selective quasi-BICs observed near the FW BIC have potential applications in lasing, spectral filtering and high-performance sensing devices.
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Submitted 16 January, 2020;
originally announced January 2020.
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Phase change dynamics and 2-dimensional 4-bit memory in Ge2Sb2Te5 via telecom-band encoding
Authors:
Gary A. Sevison,
Shiva Farzinazar,
Joshua A. Burrow,
Christopher Perez,
Heungdong Kwon,
Jaeho Lee,
Mehdi Asheghi,
Kenneth E. Goodson,
Andrew Sarangan,
Joshua Hendrickson,
Imad Agha
Abstract:
As modern computing gets continuously pushed up against the von Neumann Bottleneck -- limiting the ultimate speeds for data transfer and computation -- new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these proto…
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As modern computing gets continuously pushed up against the von Neumann Bottleneck -- limiting the ultimate speeds for data transfer and computation -- new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these protocols, we require an optical memory: either a multilevel/accumulator memory, or a computational memory. Here, we propose and demonstrate a 2-dimensional 4-bit fully optical non-volatile memory using Ge2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.
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Submitted 7 October, 2019;
originally announced November 2019.
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Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms
Authors:
Joshua A. Burrow,
Riad Yahiaoui,
Wesley Sims,
Zizwe A. Chase,
Viet Tran,
Andrew Sarangan,
Jay Mathews,
Willie S. Rockward,
Imad Agha,
Thomas A. Searles
Abstract:
It is well established that nearly all high-quality (Q) Fano-like resonances in terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in a decline of Q-factor and an increase in the resonance intensity. Therefore, in order to determine the optimal design for applications in THz sensing, a Figure of Merit (FoM) is required. Previous studies have identified the asymmetry regimes at…
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It is well established that nearly all high-quality (Q) Fano-like resonances in terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in a decline of Q-factor and an increase in the resonance intensity. Therefore, in order to determine the optimal design for applications in THz sensing, a Figure of Merit (FoM) is required. Previous studies have identified the asymmetry regimes at which the peak FoM occurs for various, specific unit cell geometries. However to date, there is no systematic comparison of the resulting FoMs for common and novel geometries. Here, a THz planar metafilm featuring split ring resonators with four distributed capacitive gaps is investigated to compare three unique methods of implementing asymmetry: (1) adjacent L-bracket translation, (2) capacitive gap translation and (3) increasing gap width. The results obtained find that by translating two gaps and increasing the bottom gap width of the unit cell, the high-Q Fano-like resonances are $6 \times$ higher than the FoM for the fundamental dipole mode. This work further informs the design process for THz metasurfaces and as such will help to define their applications in photonics and sensing.
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Submitted 5 December, 2018;
originally announced December 2018.
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Harmonic Generation in Metal-Insulator and Metal-Insulator-Metal Nanostructures
Authors:
Mallik M. R. Hussain,
Imad Agha,
Zhengning Gao,
Domenico deCeglia,
Maria A. Vincenti,
Andrew Sarangan,
Michael Scalora,
Parag Banerjee,
Joseph W. Haus
Abstract:
We report that the second and third harmonic signal reductions with insulator film surface coverage over a gold substrate gives a measure of the electron density in the spill out volume of the insulator, which is dubbed metal insulator gap states. For metal-insulator-metal (MIM) structures we observe enhancement saturation and quenching of the third harmonic efficiencies well above the efficiencie…
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We report that the second and third harmonic signal reductions with insulator film surface coverage over a gold substrate gives a measure of the electron density in the spill out volume of the insulator, which is dubbed metal insulator gap states. For metal-insulator-metal (MIM) structures we observe enhancement saturation and quenching of the third harmonic efficiencies well above the efficiencies for metal-insulator (MI) samples. The measured optical harmonics of scattered light from MI and MIM systems are compared with detailed simulations of the nonlinear interactions including free electron spill out into the insulator, nonlocal and electron quantum tunneling effects. Gold coated substrates are covered with variable thin insulator film thicknesses using atomic layer deposition. Optical harmonics of light scattered from two insulator materials (ZnO and Al2O3) are measured in our experiments. Based on our simulations we conclude that the observed MIM signal enhancement effects are primarily due to nonlocal phenomena in an electron gas.
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Submitted 5 October, 2018;
originally announced October 2018.
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Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel do**: Towards RF-compatible phase-change devices
Authors:
Pengfei Guo,
Joshua A. Burrow,
Gary A. Sevison,
Aditya Sood,
Mehdi Asheghi,
Joshua R. Hendrickson,
Kenneth E. Goodson,
Imad Agha,
Andrew Sarangan
Abstract:
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective do** scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most imp…
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High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective do** scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that do** produces the desired electrical performance without adversely affecting the film's optical properties. The nickel do** level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices at amorphous and crystalline states were obtained using ellipsometry which echoes the results from XRD. The material's thermal transport properties are measured using time-domain thermoreflectance (TDTR), showing no change upon do**. The advantages of this do** system will open up new opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.
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Submitted 5 September, 2018;
originally announced October 2018.
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Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling
Authors:
Riad Yahiaoui,
Joshua A. Burrow,
Sirak M. Mekonen,
Andrew Sarangan,
Jay Mathews,
Imad Agha,
Thomas A. Searles
Abstract:
We demonstrate a classical analogue of electromagnetically induced transparency (EIT) in a highly flexible planar terahertz metamaterial (MM) comprised of three-gap split ring resonators. The keys to achieve EIT in this system are the frequency detuning and hybridization processes between two bright modes coexisting in the same unit cell as opposed to bright-dark modes. We present experimental ver…
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We demonstrate a classical analogue of electromagnetically induced transparency (EIT) in a highly flexible planar terahertz metamaterial (MM) comprised of three-gap split ring resonators. The keys to achieve EIT in this system are the frequency detuning and hybridization processes between two bright modes coexisting in the same unit cell as opposed to bright-dark modes. We present experimental verification of two-bright mode coupling for a terahertz EIT-MM in the context of numerical results and theoretical analysis based on a coupled Lorentz oscillator model. In addition, a hybrid variation of the EIT-MM is proposed and implemented numerically in order to dynamically tune the EIT window by incorporating photosensitive silicon pads in the split gap region of the resonators. As a result, this hybrid MM enables the potential active optical control of a transition from the on-state (EIT mode) to the off-state (dipole mode).
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Submitted 23 December, 2017;
originally announced December 2017.
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Polarization-dependent electromagnetic responses of ultrathin and highly flexible asymmetric terahertz metasurfaces
Authors:
Joshua A. Burrow,
Riad Yahiaoui,
Andrew Sarangan,
Imad Agha,
Jay Mathews,
Thomas A. Searles
Abstract:
We report the polarization-dependent electromagnetic response from a series of novel terahertz (THz) metasurfaces where asymmetry is introduced through the displacement of two adjacent metallic arms separated by a distance $δ$. For all polarization states, the symmetric metasurface exhibits a low quality (Q) factor fundamental dipole mode. By breaking the symmetry, we experimentally observe a seco…
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We report the polarization-dependent electromagnetic response from a series of novel terahertz (THz) metasurfaces where asymmetry is introduced through the displacement of two adjacent metallic arms separated by a distance $δ$. For all polarization states, the symmetric metasurface exhibits a low quality (Q) factor fundamental dipole mode. By breaking the symmetry, we experimentally observe a secondary dipole-like mode with a Q factor nearly $9\times$ higher than the fundamental resonance. As $δ$ increases, the fundamental dipole mode $f_{1}$ redshifts and the secondary mode $f_{2}$ blueshifts creating a highly transmissive spectral window. Polarization-dependent measurements reveal a full suppression of $f_{2}$ for all asymmetries at $θ\geq 60^\circ$. Furthermore, at $δ\geq 60 \text{ }μ\text{m}$, we observe a polarization selective electromagnetic induced transparency (EIT) for the fundamental mode. This work paves the way for applications in filtering, sensing and slow-light devices common to other high Q factor THz metasurfaces with EIT-like response.
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Submitted 18 October, 2017;
originally announced October 2017.
