Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
Authors:
Peng Li,
**jun Ding,
Steven S. -L. Zhang,
James Kally,
Timothy Pillsbury,
Olle G. Heinonen,
Gaurab Rimal,
Chong Bi,
August DeMann,
Stuart B. Field,
Weigang Wang,
**ke Tang,
J. S. Jiang,
Axel Hoffmann,
Nitin Samarth,
Mingzhong Wu
Abstract:
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that ha…
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A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
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Submitted 16 December, 2020;
originally announced December 2020.
Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
Authors:
Tao Liu,
James Kally,
Timothy Pillsbury,
Chuanpu Liu,
Houchen Chang,
**jun Ding,
Yang Cheng,
Maria Hilse,
Roman Engel-Herbert,
Anthony Richardella,
Nitin Samarth,
Mingzhong Wu
Abstract:
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the dam** in Y3Fe5O12. Such TSS-induced c…
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This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the dam** in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.
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Submitted 6 June, 2020;
originally announced June 2020.
