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Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Authors:
Maciej Jaworski,
Paweł Mrowiński,
Marek Burakowski,
Paweł Holewa,
Laura Zeidler,
Marcin Syperek,
Elizaveta Semenova,
Grzegorz Sęk
Abstract:
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon…
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Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D sha** of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.
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Submitted 7 June, 2024;
originally announced June 2024.
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Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Authors:
Wojciech Rudno-Rudziński,
Michał Gawełczyk,
Paweł Podemski,
Ramasubramanian Balasubramanian,
Vitalii Sichkovskyi,
Amnon J. Willinger,
Gadi Eisenstein,
Johann P. Reithmaier,
Grzegorz Sęk
Abstract:
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible wi…
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Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.
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Submitted 20 March, 2024;
originally announced March 2024.
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Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Authors:
Marek Burakowski,
Paweł Holewa,
Aurimas Sakanas,
Anna Musiał,
Grzegorz Sęk,
Paweł Mrowiński,
Kresten Yvind,
Elizaveta Semenova,
Marcin Syperek
Abstract:
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate th…
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Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
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Submitted 23 November, 2023;
originally announced November 2023.
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Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region
Authors:
Bartosz Kamiński,
Agata Zielińska,
Anna Musiał,
Ching-Wen Shih,
Imad Limame,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photoluminescence quenching were identified. We measured reflectivity spectra of the cavity structure which allowed us to verify the proposed layer design and its fabrication by comparing them with the results of simulations withi…
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We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photoluminescence quenching were identified. We measured reflectivity spectra of the cavity structure which allowed us to verify the proposed layer design and its fabrication by comparing them with the results of simulations within the transfer matrix method.
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Submitted 14 May, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Optimization of heterogeneously integrated InP-Si on-chip photonic components
Authors:
P. Mrowiński,
P. Holewa,
A. Sakanas,
G. Sęk,
E. Semenova,
M. Syperek
Abstract:
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-b…
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We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using the existing semiconductor processing technologies. Our numerical studies reveal nearly 86% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field modes along a tapered geometry. The coupling efficiency of a dipole emitting to the hybrid InP/Si waveguide is evaluated to ~60%, which results in more than 50% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plain outcoupling configurations. In the former case, the outcoupling amounts to ~26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 10%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 μm spectral range.
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Submitted 28 November, 2022; v1 submitted 31 August, 2022;
originally announced August 2022.
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Crossover from exciton-polariton condensation to photon lasing in an optical trap
Authors:
Maciej Pieczarka,
Dąbrówka Biegańska,
Christian Schneider,
Sven Höfling,
Sebastian Klembt,
Grzegorz Sęk,
Marcin Syperek
Abstract:
Optical trap** has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pum** laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation scheme. Here, we compare two experimental methods on…
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Optical trap** has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pum** laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation scheme. Here, we compare two experimental methods on a sample, where a single spot excitation experiment allowed only to observe photonic lasing in the weak coupling regime. In contrast, the ring-shaped excitation resulted in the two-threshold behavior, where an exciton-polariton condensate manifests itself at the first and photon lasing at the second threshold. Both lasing regimes are trapped in an optical potential created by the pump. We interpret the origin of this confining potential in terms of repulsive interactions of polaritons with the reservoir at the first threshold and as a result of the excessive free-carrier induced refractive index change of the microcavity at the second threshold. This observation offers a way to achieve multiple phases of photonic condensates in samples, e.g., containing novel materials as an active layer, where two-threshold behavior is impossible to achieve with a single excitation spot.
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Submitted 8 August, 2023; v1 submitted 10 December, 2021;
originally announced December 2021.
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InP-based single-photon sources operating at telecom C-band with increased extraction efficiency
Authors:
A. Musiał,
M. Mikulicz,
P. Mrowiński,
A. Zielińska,
P. Sitarek,
P. Wyborski,
M. Kuniej,
J. P. Reithmaier,
G. Sęk,
M. Benyoucef
Abstract:
In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on th…
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In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5x108 cm-2 to ~2x109 cm-2 and symmetric shape of these nanostructures together with spectral range of emission makes them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1As layers and cylindrical photonic confinement structures. Realization of such technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3+/-2)% into 0.4 numerical aperture detection optics at approx. 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.
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Submitted 31 January, 2021;
originally announced February 2021.
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Plug&play fibre-coupled 73 kHz single-photon source operating in the telecom O-band
Authors:
Anna Musial,
Kinga Zolnacz,
Nicole Srocka,
Oleh Kravets,
Jan Große,
Jacek Olszewski,
Krzysztof Poturaj,
Grzegorz Wojcik,
Pawel Mergo,
Kamil Dybka,
Mariusz Dyrkacz,
Michal Dlubek,
Kristian Lauritsen,
Andreas Bülter,
Philipp-Immanuel Schneider,
Lin Zschiedrich,
Sven Burger,
Sven Rodt,
Waclaw Urbanczyk,
Grzegorz Sek,
Stephan Reitzenstein
Abstract:
A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challeng…
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A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challenge by develo** a ready to use semiconductor quantum dot (QD)-based device that launches single photons at a wavelength of 1.3 um directly into a single-mode optical fibre. In our approach the QD is deterministically integrated into a nanophotonic structure to ensure efficient on-chip coupling into a fibre. The whole arrangement is integrated into a 19" compatible housing to enable stand-alone operation by cooling via a compact Stirling cryocooler. The realized source delivers single photons with multiphoton events probability as low as 0.15 and single-photon emission rate up to 73 kHz into a standard telecom single-mode fibre.
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Submitted 21 December, 2019;
originally announced December 2019.
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Observation of gain-pinned dissipative solitons in a microcavity laser
Authors:
Maciej Pieczarka,
Dario Poletti,
Christian Schneider,
Sven Höfling,
Elena A. Ostrovskaya,
Grzegorz Sęk,
Marcin Syperek
Abstract:
We demonstrate an experimental approach to create dissipative solitons in a microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localised structures, called gain-pinned dissipative solitons that exist due to the balance of gain and nonlinear losses and are confined to a diffract…
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We demonstrate an experimental approach to create dissipative solitons in a microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localised structures, called gain-pinned dissipative solitons that exist due to the balance of gain and nonlinear losses and are confined to a diffraction-limited volume. The ultrafast formation dynamics and decay of the gain-pinned solitons are probed directly, showing that they are created on a picosecond timescale, orders of magnitude faster than laser cavity solitons. All of the experimentally observed features and dynamics are reconstructed by using a standard complex Ginzburg-Landau model.
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Submitted 1 April, 2020; v1 submitted 21 May, 2019;
originally announced May 2019.
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Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
Authors:
Paweł Podemski,
Aleksander Maryński,
Paweł Wyborski,
Artem Bercha,
Witold Trzeciakowski,
Grzegorz Sęk
Abstract:
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single d…
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Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single dot photoluminescence excitation spectroscopy is limited mainly to dots emitting below 1 $μ$m, while nanostructures optically active in the telecommunication windows of 1.3 and 1.55 $μ$m are of particular interest, as they correspond to the desirable wavelengths in nanophotonic applications. This report presents an approach to photoluminescence excitation spectroscopy covering this application-relevant spectral range on single dot level. Experimental details are discussed, including issues related to the tunable excitation source and its spectral filtering, and illustrated with examples of photoluminescence excitation spectroscopy results from single quantum dots emitting in both the 1.3 and 1.55 $μ$m spectral ranges.
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Submitted 25 April, 2019; v1 submitted 22 March, 2019;
originally announced March 2019.
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Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
Authors:
M. Syperek,
Ł. Dusanowski,
M. Gawełczyk,
G. Sęk,
A. Somers,
J. P. Reithmaier,
S. Höfling,
J. Misiewicz
Abstract:
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum**…
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Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum** conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pum** scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.
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Submitted 24 July, 2018;
originally announced July 2018.
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Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm
Authors:
Ł. Dusanowski,
M. Gawełczyk,
J. Misiewicz,
S. Höfling,
J. P. Reithmaier,
G. Sęk
Abstract:
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with $s$-$p$ shell energy splittings far below the optical phonon energy, which strongly affects the…
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We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with $s$-$p$ shell energy splittings far below the optical phonon energy, which strongly affects the phonon-assisted relaxation. Probing the emission kinetics with time-resolved microphotoluminescence from a single dot, we observe a strongly non-monotonic temperature dependence of the charged exciton lifetime. Using a kinetic rate-equation model, we find that a relaxation side-path through the excited charged exciton triplet states may lead to such behavior. This, however, involves efficient singlet-triplet relaxation via the electron spin-flip. Thus, we interpret the results as an indirect observation of strongly enhanced electron spin relaxation without magnetic field, possibly resulting from atypical confinement characteristics.
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Submitted 28 July, 2018; v1 submitted 8 July, 2018;
originally announced July 2018.
