Showing 1–13 of 13 results for author: Ryu, H

Good plasmons in a bad metal

Authors: Francesco L. Ruta, Yinming Shao, Swagata Acharya, Anqi Mu, Na Hyun Jo, Sae Hee Ryu, Daria Balatsky, Dimitar Pashov, Brian S. Y. Kim, Mikhail I. Katsnelson, James G. Analytis, Eli Rotenberg, Andrew J. Millis, Mark van Schilfgaarde, D. N. Basov

Abstract: Correlated materials may exhibit unusually high resistivity increasing linearly in temperature, breaking through the Mott-Ioffe-Regel bound, above which coherent quasiparticles are destroyed. The fate of collective charge excitations, or plasmons, in these systems is a subject of debate. Several studies suggest plasmons are overdamped while others detect unrenormalized plasmons. Here, we present d… ▽ More Correlated materials may exhibit unusually high resistivity increasing linearly in temperature, breaking through the Mott-Ioffe-Regel bound, above which coherent quasiparticles are destroyed. The fate of collective charge excitations, or plasmons, in these systems is a subject of debate. Several studies suggest plasmons are overdamped while others detect unrenormalized plasmons. Here, we present direct optical images of low-loss hyperbolic plasmon polaritons (HPPs) in the correlated van der Waals metal MoOCl2. HPPs are plasmon-photon modes that waveguide through extremely anisotropic media and are remarkably long-lived in MoOCl2. Many-body theory supported by photoemission results reveals that MoOCl2 is in an orbital-selective and highly incoherent Peierls phase. Different orbitals acquire markedly different bonding-antibonding character, producing a highly-anisotropic, isolated Fermi surface. The Fermi surface is further reconstructed and made partly incoherent by electronic interactions, renormalizing the plasma frequency. HPPs remain long-lived in spite of this, allowing us to uncover previously unseen imprints of electronic correlations on plasmonic collective modes. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: 32 pages, 16 figures

Deep learning-based statistical noise reduction for multidimensional spectral data

Authors: Younsik Kim, Dong** Oh, Soonsang Huh, Dongjoon Song, Sunbeom Jeong, Junyoung Kwon, Minsoo Kim, Donghan Kim, Hanyoung Ryu, Jongkeun Jung, Wonshik Kyung, Byungmin Sohn, Suyoung Lee, Jounghoon Hyun, Yeonghoon Lee, Yeongkwan Kimand Changyoung Kim

Abstract: In spectroscopic experiments, data acquisition in multi-dimensional phase space may require long acquisition time, owing to the large phase space volume to be covered. In such case, the limited time available for data acquisition can be a serious constraint for experiments in which multidimensional spectral data are acquired. Here, taking angle-resolved photoemission spectroscopy (ARPES) as an exa… ▽ More In spectroscopic experiments, data acquisition in multi-dimensional phase space may require long acquisition time, owing to the large phase space volume to be covered. In such case, the limited time available for data acquisition can be a serious constraint for experiments in which multidimensional spectral data are acquired. Here, taking angle-resolved photoemission spectroscopy (ARPES) as an example, we demonstrate a denoising method that utilizes deep learning as an intelligent way to overcome the constraint. With readily available ARPES data and random generation of training data set, we successfully trained the denoising neural network without overfitting. The denoising neural network can remove the noise in the data while preserving its intrinsic information. We show that the denoising neural network allows us to perform similar level of second-derivative and line shape analysis on data taken with two orders of magnitude less acquisition time. The importance of our method lies in its applicability to any multidimensional spectral data that are susceptible to statistical noise. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Comments: 8 pages, 8 figures

Journal ref: Review of Scientific Instruments 92, 073901 (2021)

On-Stack Two-Dimensional Conversion of MoS2 into MoO3

Authors: Taeg Yeoung Ko, Areum Jeong, Wontaek Kim, **hwan Lee, Youngchan Kim, Jung Eun Lee, Gyeong Hee Ryu, Kwanghee Park, Dogyeong Kim, Zonghoon Lee, Min Hyung Lee, Changgu Lee, Sunmin Ryu

Abstract: Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbat… ▽ More Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks. △ Less

Submitted 10 August, 2020; originally announced August 2020.

Journal ref: 2D materials, 4, 2016, 014003

Static Rashba Effect by Surface Reconstruction and Photon Recycling in the Dynamic Indirect Gap of APbBr3 (A = Cs, CH3NH3) Single Crystals

Authors: Hongsun Ryu, Dae Young Park, K. McCall, Hye Ryung Byun, Yongjun Lee, Tae Jung Kim, Mun Seok Jeong, Jeongyong Kim, Mercouri G. Kanatzidis, Joon I. Jang

Abstract: Recently, halide perovskites have gained significant attention from the perspective of efficient spintronics owing to Rashba effect. This effect occurs as a consequence of strong spin-orbit coupling under noncentrosymmetric environment, which can be dynamic and/or static. However, there exist intense debates on the origin of broken inversion symmetry since the halide perovskites typically crystall… ▽ More Recently, halide perovskites have gained significant attention from the perspective of efficient spintronics owing to Rashba effect. This effect occurs as a consequence of strong spin-orbit coupling under noncentrosymmetric environment, which can be dynamic and/or static. However, there exist intense debates on the origin of broken inversion symmetry since the halide perovskites typically crystallize into a centrosymmetric structure. In order to clarify the issue, we examine both dynamic and static effects in the all-inorganic CsPbBr3 and organic-inorganic CH3NH3PbBr3 (MAPbBr3) perovskite single crystals by employing temperature- and polarization-dependent photoluminescence excitation spectroscopy. The perovskite single crystals manifest the dynamic effect by photon recycling in the indirect Rashba gap, causing dual peaks in the photoluminescence. But the effect vanishes in CsPbBr3 at low temperatures (< 50 K), accompanied by a striking color change of the crystal, arising presumably from lower degrees of freedom for inversion symmetry breaking associated with the thermal motion of the spherical Cs cation, compared with the polar MA cation in MAPbBr3. We also show that static Rashba effect occurs only in MAPbBr3 below 90 K due to surface reconstruction via MA-cation ordering, which likely extends across a few layers from the crystal surface to the interior. We further demonstrate that this static Rashba effect can be completely suppressed upon surface treatment with poly methyl methacrylate (PMMA) coating. We believe that our results provide a rationale for the Rashba effects in halide perovskites. △ Less

Submitted 25 August, 2020; v1 submitted 22 July, 2020; originally announced July 2020.

Lattice-mismatched semiconductor heterostructures

Authors: Dong Liu, Sang June Cho, Jung-Hun Seo, Kwangeun Kim, Munho Kim, Jian Shi, Xin Yin, Wonsik Choi, Chen Zhang, Jisoo Kim, Mohadeseh A. Baboli, Jeongpil Park, Jihye Bong, In-Kyu Lee, Jiarui Gong, Solomon Mikael, Jae Ha Ryu, Parsian K. Mohseni, Xiuling Li, Shaoqin Gong, Xudong Wang, Zhenqiang Ma

Abstract: Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severe… ▽ More Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theory on the role of interface oxide in forming the heterostructures, we describe experimental demonstrations of Ge/Si (diamond lattices), Si/GaAs (zinc blende lattice), GaAs/GaN (hexagon lattice), and Si/GaN heterostructures. Extraordinary electrical performances in terms of ideality factor, current on/off ratio, and reverse breakdown voltage are measured from p-n diodes fabricated from the four types of heterostructures, significantly outperforming diodes derived from other methods. Our demonstrations indicate the versatility of the ultra-thin-oxide-interface approach in forming lattice-mismatched heterostructures, open up a much larger possibility for material combinations for heterostructures, and pave the way toward broader applications in electronic and optoelectronic realms. △ Less

Submitted 25 December, 2018; originally announced December 2018.

Comments: 29 pages, 6 figures, 1 table. Supplementary Information not included

Wireless Power Transfer for High-precision Position Detection of Railroad Vehicles

Authors: Hyun-Gyu Ryu, Dongsoo Har

Abstract: Detection of vehicle position is critical for successful operation of intelligent transportation system. In case of railroad transportation systems, position information of railroad vehicles can be detected by GPS, track circuits, and so on. In this paper, position detection based on tags onto sleepers of the track is investigated. Position information stored in the tags is read by a reader placed… ▽ More Detection of vehicle position is critical for successful operation of intelligent transportation system. In case of railroad transportation systems, position information of railroad vehicles can be detected by GPS, track circuits, and so on. In this paper, position detection based on tags onto sleepers of the track is investigated. Position information stored in the tags is read by a reader placed at the bottom of running railroad vehicle. Due to limited capacity of battery or its alternative in the tags, power required for transmission of position information to the reader is harvested by the tags from the power wirelessly transferred from the reader. Basic mechanism in wireless power transfer is magnetic induction and power transfer efficiency according to the relative location of the reader to a tag is discussed with simulation results. Since power transfer efficiency is significantly affected by the ferromagnetic material (steel) at the bottom of the railroad vehicle and the track, magnetic beam sha** by ferrite material is carried out. With the ferrite material for magnetic beam sha**, degradation of power transfer efficiency due to the steel is substantially reduced. Based on the experimental results, successful wireless power transfer to the tag coil is possible when transmitted power from the reader coil is close to a few watts. △ Less

Submitted 31 August, 2015; originally announced August 2015.

Comments: 2015 IEEE Power, Communication and Information Technology Conference (PCITC) accepted, preprinted

Analytic Model of Variable Characteristic of Coefficient of Restitution and Its Application to Soccer Ball Trajectory Planning

Authors: Hwan-Taek Ryu, Byung-Ju Yi, Younghun Kwon

Abstract: In this article, we investigate the behavior of the coefficient of restitution (COR) which is an important parameter in many impact-related fields. In many cases, the COR is considered as a constant value, but it varies according to many variables. In this paper, we introduce an analytical variable COR model considering aero dynamics along with its verification through experiment. To introduce and… ▽ More In this article, we investigate the behavior of the coefficient of restitution (COR) which is an important parameter in many impact-related fields. In many cases, the COR is considered as a constant value, but it varies according to many variables. In this paper, we introduce an analytical variable COR model considering aero dynamics along with its verification through experiment. To introduce and analyze the variable characteristic of the COR model, the collision phenomenon between a pendulum and two kinds of ball is employed as an example and aerodynamics such as drag force is considered for analyzing the after-effect of the collision. Collision velocity of the pendulum, dynamic parameters of colliding bodies, contact time, drag coefficient, the air density, and the cross-sectional area of the ball are found as the typical variables of analytical COR model. This observation generalizes the result in previous researches. To verify new COR model, the travel distances for the curve-fitted constant COR model and the curve-fitted variable COR model are compared through simulation and experiment. Moreover, comparison between constant COR and variable COR is presented in several point of views. Finally, using the variable COR model, the travel distance of the ball for collision velocity, which is beyond the curve-fitted range, is estimated. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5μm)

Authors: Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck

Abstract: The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emission at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can… ▽ More The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emission at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by using low growth rates, the incorporation of strain-reducing cap** layers or growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also allows greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain and composition. In this paper we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric (TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers. △ Less

Submitted 15 December, 2010; originally announced December 2010.

Comments: Abstract

Journal ref: J. of Applied Physics, 2010

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Authors: Muhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, Shaikh S. Ahmed, Hubert Krenner, Timothy B. Boykin, Gerhard Klimeck

Abstract: Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explici… ▽ More Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions. △ Less

Submitted 22 June, 2011; v1 submitted 18 August, 2010; originally announced August 2010.

Comments: Accepted for publication in IOP Nanotechnology Journal

Journal ref: Nanotechnology 22, 315709, 2011

A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium

Authors: Hoon Ryu, Sunhee Lee, Gerhard Klimeck

Abstract: A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high do** density with many electrons, a highly parallelized self-consistent Schroedinger-Poisson solver is used with atomistic representations of multiple impu… ▽ More A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high do** density with many electrons, a highly parallelized self-consistent Schroedinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile. △ Less

Submitted 25 March, 2010; originally announced March 2010.

Comments: IEEE proceedings of the 13th International Workshop on Computational Electronics (IWCE-13)

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

Authors: Sunhee Lee, Hoon Ryu, Zheng** Jiang, Gerhard Klimeck

Abstract: Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to be pursued. The Nanoelectronic Modeling Tool (NEMO 3-D) has satisfied the requirement by including emprical $sp^{3}s^{*}$ and $sp^{3}d^{5}s^{*}$ tight binding… ▽ More Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to be pursued. The Nanoelectronic Modeling Tool (NEMO 3-D) has satisfied the requirement by including emprical $sp^{3}s^{*}$ and $sp^{3}d^{5}s^{*}$ tight binding models and considering strain to successfully simulate various semiconductor material systems. Computationally, however, NEMO 3-D needs significant improvements to utilize increasing supply of processors. This paper introduces the new modeling tool, OMEN 3-D, and discusses the major computational improvements, the 3-D domain decomposition and the multi-level parallelism. As a featured application, a full 3-D parallelized Schrödinger-Poisson solver and its application to calculate the bandstructure of $δ$ doped phosphorus(P) layer in silicon is demonstrated. Impurity bands due to the donor ion potentials are computed. △ Less

Submitted 24 March, 2010; v1 submitted 23 March, 2010; originally announced March 2010.

Comments: 4 pages, 6 figures, IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Bei**g, May 27-29 2009

Journal ref: IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Bei**g, May 27-29 2009

Multimillion Atom Simulations with NEMO 3-D

Authors: Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin, Gerhard Klimeck

Abstract: The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representa… ▽ More The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representation of the underlying material become important. The variety of geometries, materials, and do** configurations in semiconductor devices at the nanoscale suggests that a general nanoelectronic modeling tool is needed. The Nanoelectronic Modeling tool (NEMO 3-D) has been developed to address these needs. Based on the atomistic valence-force field (VFF) method and a variety of nearest-neighbor tight-binding models, NEMO 3-D enables the computation of strain for over 64 million atoms and of electronic structure for over 52 million atoms, corresponding to volumes of (110nmx110nmx110nm) and (101nmx101nmx101nm), respectively. This article discusses the theoretical models, essential algorithmic and computational components, and optimization methods that have been used in the development and the deployment of NEMO 3-D. Also, successful applications of NEMO 3-D are demonstrated in the atomistic calculation of single-particle electronic states of (1) self-assembled quantum dots including long-range strain and piezoelectricity; (2) stacked quantum dots ; (3) Phosphorus impurities in Silicon used in quantum computation; (4) Si on SiGe quantum wells (QWs); and (5) SiGe nanowires. △ Less

Submitted 13 January, 2009; originally announced January 2009.

Comments: 35 pages; 37 figures

Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data

Authors: Muhammad Usman, Hoon Ryu, Insoo Woo, David Ebert, Gerhard Klimeck

Abstract: Low-loss optical communication requires light sources at 1.5um wavelengths. Experiments showed without much theoretical guidance that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an InxGa1-xAs strain-reducing cap** layer (SRCL). In this work systematic multimillion atom electronic structure calculations qualitatively and quantitatively explain f… ▽ More Low-loss optical communication requires light sources at 1.5um wavelengths. Experiments showed without much theoretical guidance that InAs/GaAs quantum dots (QDs) may be tuned to such wavelengths by adjusting the In fraction in an InxGa1-xAs strain-reducing cap** layer (SRCL). In this work systematic multimillion atom electronic structure calculations qualitatively and quantitatively explain for the first time available experimental data. The NEMO 3-D simulations treat strain in a 15 million atom system and electronic structure in a subset of ~9 million atoms using the experimentally given nominal geometries and without any further parameter adjustments the simulations match the nonlinear behavior of experimental data very closely. With the match to experimental data and the availability of internal model quantities significant insight can be gained through map** to reduced order models and their relative importance. We can also demonstrate that starting from simple models has in the past led to the wrong conclusions. The critical new insight presented here is that the QD changes its shape. The quantitative simulation agreement with experiment without any material or geometry parameter adjustment in a general atomistic tool leads us to believe that the era of nano Technology Computer Aided Design (nano-TCAD) is approaching. NEMO 3-D will be released on nanoHUB.org where the community can duplicate and expand on the results presented here through interactive simulations. △ Less

Submitted 19 December, 2008; originally announced December 2008.

Comments: 14 pages, 11 figures. Accepted for Publication in IEEE Trans. on Nanotechnology