Showing 1–6 of 6 results for author: Rugeramigabo, E P

Polarized sub-meV Photoluminescence in 2D PbS Nanoplatelets at Cryogenic Temperatures

Authors: Pengji Li, Leon Biesterfeld, Lars Klepzig, **gzhong Yang, Huu Thoai Ngo, Ahmed Addad, Tom N. Rakow, Ruolin Guan, Eddy P. Rugeramigabo, Louis Biadala, Jannika Lauth, Michael Zopf

Abstract: Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit of excellent (near-)infrared sources continues. One notable candidate in this regard are photoluminescent two-dimensional (2D) PbS nanoplatelets (NPLs) exhibiti… ▽ More Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit of excellent (near-)infrared sources continues. One notable candidate in this regard are photoluminescent two-dimensional (2D) PbS nanoplatelets (NPLs) exhibiting excitonic emission at 720 nm (1.7 eV) directly tying to the typical emission range limit of CdSe NPLs. Here, we present the first comprehensive analysis of low-temperature PL from this material class. Ultrathin 2D PbS NPLs exhibit high crystallinity confirmed by scanning transmission electron microscopy, and revealing Moire patterns in overlap** structures. At 4K, we observe unique PL features in single PbS NPLs, including narrow zero-phonon lines with line widths down to 0.6 meV and a linear degree of polarization up to 90%. Time-resolved measurements identify trions as the dominant emission source with a 2.3 ns decay time. Sub-meV spectral diffusion and no immanent blinking over minutes is observed, as well as discrete spectral jumps without memory effects. These findings advance the understanding and underpin the potential of colloidal PbS NPLs for optical and quantum technologies. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

Authors: Chenxi Ma, **gzhong Yang, Pengji Li, Eddy P. Rugeramigabo, Michael Zopf, Fei Ding

Abstract: Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes t… ▽ More Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs. △ Less

Submitted 12 January, 2024; v1 submitted 2 January, 2024; originally announced January 2024.

Comments: 12 pages, 5 figures

Journal ref: Opt. Express 32, 14789-14800 (2024)

High-rate intercity quantum key distribution with a semiconductor single-photon source

Authors: **gzhong Yang, Zenghui Jiang, Frederik Benthin, Joscha Hanel, Tom Fandrich, Raphael Joos, Stephanie Bauer, Sascha Kolatschek, Ali Hreibi, Eddy Patrick Rugeramigabo, Michael Jetter, Simone Luca Portalupi, Michael Zopf, Peter Michler, Stefan Kück, Fei Ding

Abstract: Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of sin… ▽ More Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 * 10^{-5} with an average quantum bit error ratio of ~ 0.65 % are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications. △ Less

Submitted 2 July, 2024; v1 submitted 30 August, 2023; originally announced August 2023.

Comments: 10 pages, 4 figures

Journal ref: Light Sci Appl 13, 150 (2024)

A solid-state source of single and entangled photons at diamond SiV$^-$-center transitions operating at 80K

Authors: Xin Cao, **gzhong Yang, Tom Fandrich, Yiteng Zhang, Eddy P. Rugeramigabo, Benedikt Brechtken, Rolf J. Haug, Michael Zopf, Fei Ding

Abstract: Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanopho… ▽ More Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices incorporating the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of Silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to 80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications. △ Less

Submitted 27 April, 2023; originally announced April 2023.

Surface quantum dots with pure, coherent, and blinking-free single photon emission

Authors: Xin Cao, **gzhong Yang, Pengji Li, Tom Fandrich, Eddy P. Rugeramigabo, Vlastimil Křápek, Chenxi Ma, Frederik Benthin, Robert Keil, Benedikt Brechtken, Rolf J. Haug, Michael Oestreich, Yiteng Zhang, Constantin Schmidt, Zhao An, Michael Zopf, Fei Ding

Abstract: The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performan… ▽ More The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $μ$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing. △ Less

Submitted 12 May, 2023; v1 submitted 27 July, 2022; originally announced July 2022.

Comments: New experiments show that the results have to be re-interpreted, most likely leading to a new manuscript

Statistical limits for quantum networks with semiconductor entangled photon sources

Authors: **gzhong Yang, Michael Zopf, Pengji Li, Nand Lal Sharma, Weijie Nie, Frederik Benthin, Tom Fandrich, Eddy Patrick Rugeramigabo, Caspar Hopfmann, Robert Keil, Oliver G. Schmidt, Fei Ding

Abstract: Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swap** with sources of polarization-entangled photons from the commonly used biexcito… ▽ More Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swap** with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swap** based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality. △ Less

Submitted 10 June, 2022; v1 submitted 14 September, 2021; originally announced September 2021.

Comments: 9 pages, 4 figures

Journal ref: Physical Review B 105, 235305