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Multi-Band Petahertz Currents Resolved via High Harmonic Generation Spectroscopy
Authors:
Ayelet Julie Uzan,
Gal Orenstein,
Álvaro Jiménez-Galán,
Chris McDonald,
Rui E. F Silva,
Barry D. Bruner,
Nikolai D. Klimkin,
Valerie Blanchet,
Talya Arusi-Parpar,
Michael Krüger,
Alexey N. Rubtsov,
Olga Smirnova,
Misha Ivanov,
Binghai Yan,
Thomas Brabec,
Nirit Dudovich
Abstract:
Strong field driven electric currents in condensed matter systems open new frontiers in petahertz electronics. In this regime new challenges arise as the role of the band structure and the quantum nature of electron-hole dynamics have yet to be resolved. Here we reveal the underlying attosecond dynamics that dictates the temporal evolution of carriers in multi-band solid state systems, via high ha…
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Strong field driven electric currents in condensed matter systems open new frontiers in petahertz electronics. In this regime new challenges arise as the role of the band structure and the quantum nature of electron-hole dynamics have yet to be resolved. Here we reveal the underlying attosecond dynamics that dictates the temporal evolution of carriers in multi-band solid state systems, via high harmonic generation (HHG) spectroscopy. We demonstrate that when the electron-hole relative velocity approaches zero, enhanced quantum interference leads to the appearance of spectral caustics in the HHG spectrum. Introducing the role of the dynamical joint density of states (JDOS) we identify its direct map** into the spectrum, exhibiting singularities at the spectral caustics. By probing these singularities, we visualize the structure of multiple unpopulated high conduction bands. Our results open a new path in the control and study of attosecond quasi-particle interactions within the field dressed band structure of crystals.
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Submitted 14 December, 2018; v1 submitted 6 December, 2018;
originally announced December 2018.
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Optical echo in photonic crystals
Authors:
A. E. Antipov,
A. N. Rubtsov
Abstract:
The dynamics of photonic wavepacket in the effective oscillator potential is studied. The oscillator potential is constructed on a base of one dimensional photonic crystal with a period of unit cell adiabatically varied in space. The structure has a locally equidistant discrete spectrum. This leads to an echo effect, i.e. the periodical reconstruction of the packet shape. The effect can be obser…
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The dynamics of photonic wavepacket in the effective oscillator potential is studied. The oscillator potential is constructed on a base of one dimensional photonic crystal with a period of unit cell adiabatically varied in space. The structure has a locally equidistant discrete spectrum. This leads to an echo effect, i.e. the periodical reconstruction of the packet shape. The effect can be observed in a nonlinear response of the system. Numerical estimations for porous-silicon based structures are presented for femtosecond Ti:Sapphire laser pump.
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Submitted 14 December, 2006;
originally announced December 2006.
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DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces
Authors:
O. A. Aktsipetrov,
A. A. Fedyanin,
A. V. Melnikov,
E. D. Mishina,
A. N. Rubtsov,
M. H. Anderson,
P. T. Wilson,
M. ter Beek,
X. F. Hu,
J. I. Dadap,
M. C. Downer
Abstract:
The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition…
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The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, do** concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures.
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Submitted 3 June, 1998; v1 submitted 1 June, 1998;
originally announced June 1998.
