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Broadband, Temperature Tolerant and Passively Biased Resonantly Enhanced Mach-Zehnder Modulators
Authors:
S. Romero-García,
A. Moscoso-Mártir,
J. Nojic,
S. Sharif-Azadeh,
J. Müller,
B. Shen,
F. Merget,
J. Witzens
Abstract:
We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω mat…
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We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω matched linear traveling wave modulator with comparable phase shifter technology, drive voltage and output optical modulation amplitude. Passive biasing of the Mach-Zehnder interferometer is further implemented by replacing a splitter element in the MZM with a novel device combining splitting and fiber coupling functionalities in a single, multi-modal structure, that converts permanent fiber placement into a phase correction. Both concepts are combined in a single modulator device, removing the need for any type of active control in a wide temperature operation range.
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Submitted 31 October, 2018;
originally announced December 2018.
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Stabilization and frequency control of a DFB laser with a tunable optical reflector integrated in a Silicon Photonics PIC
Authors:
Johannes Hauck,
Matthias Schrammen,
Sebastían Romero-García,
Juliana Müller,
Bin Shen,
Jens Richter,
Florian Merget,
Jeremy Witzens
Abstract:
We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcati…
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We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcation modes triggered by reflections occurring elsewhere on the chip. A semi-analytical model describing laser dynamics under combined optical feedback from the input facet of the edge coupler and from the tunable on-chip reflector fits the measurements. Compensation of detrimental effects from reflections induced elsewhere on a transceiver chip may allow moving isolators downstream in future communications systems, facilitating direct hybrid laser integration in Silicon Photonics chips, provided a suitable feedback signal for a control system can be identified. Moreover, the optical frequency tuning at lower feedback levels can be used to form a rapidly tunable optical oscillator as part of an optical phase locked loop, circumventing the problem of the thermal to free carrier effect crossover in the FM response of injection current controlled semiconductor laser diodes.
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Submitted 28 July, 2016;
originally announced July 2016.
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Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser
Authors:
Alvaro Moscoso-Mártir,
Juliana Müller,
Johannes Hauck,
Nicolas Chimot,
Rony Setter,
Avner Badihi,
Daniel E. Rasmussen,
Alexandre Garreau,
Mads Nielsen,
Elmira Islamova,
Sebastián Romero-García,
Bin Shen,
Anna Sandomirsky,
Sylvie Rockman,
Chao Li,
Saeed Sharif Azadeh,
Guo-Qiang Lo,
Elad Mentovich,
Florian Merget,
François Lelarge,
Jeremy Witzens
Abstract:
We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gb…
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We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further analyzed taking cross gain modulation and four wave mixing into account. While semiconductor mode-locked lasers have been identified as a potential light source for low cost Datacom WDM transceivers for some time, this is, to the best of our knowledge, the first comprehensive investigation of the overall link budget in a Silicon Photonics implementation showing this technology to be a credible contender for low latency datacenter interconnects.
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Submitted 27 May, 2016;
originally announced May 2016.
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High Speed WDM Interconnect Using Silicon Photonics Ring Modulators and Mode-Locked Laser
Authors:
Juliana Müller,
Johannes Hauck,
Alvaro Moscoso-Mártir,
Nicolas Chimot,
Sebastian Romero-García,
Bin Shen,
Florian Merget,
François Lelarge,
Jeremy Witzens
Abstract:
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
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Submitted 26 October, 2015;
originally announced October 2015.
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Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides
Authors:
Sebastian Romero-García,
Bahareh Marzban,
Florian Merget,
Bin Shen,
Jeremy Witzens
Abstract:
We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguide…
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We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-Pérot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and 3.8 um (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology.
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Submitted 6 October, 2013;
originally announced October 2013.
