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Purcell enhancement of silicon W centers in circular Bragg grating cavities
Authors:
Baptiste Lefaucher,
Jean-Baptiste Jager,
Vincent Calvo,
Félix Cache,
Alrik Durand,
Vincent Jacques,
Isabelle Robert-Philip,
Guillaume Cassabois,
Yoann Baron,
Frédéric Mazen,
Sébastien Kerdilès,
Shay Reboh,
Anaïs Dréau,
Jean-Michel Gérard
Abstract:
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum el…
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Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($η_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.
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Submitted 27 October, 2023;
originally announced October 2023.
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Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
Authors:
B. Lefaucher,
J. -B. Jager,
V. Calvo,
A. Durand,
Y. Baron,
F. Cache,
V. Jacques,
I. Robert-Philip,
G. Cassabois,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Khoury,
M. Abbarchi,
A. Dréau,
J. -M. Gérard
Abstract:
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wi…
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We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.
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Submitted 11 October, 2022;
originally announced October 2022.
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Single G centers in silicon fabricated by co-implantation with carbon and proton
Authors:
Yoann Baron,
Alrik Durand,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Shay Reboh,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, rea…
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We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $μ$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.
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Submitted 28 April, 2022;
originally announced April 2022.
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Detection of single W-centers in silicon
Authors:
Yoann Baron,
Alrik Durand,
Péter Udvarhelyi,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Vincent Mazzocchi,
Jean-Michel Gérard,
Adam Gali,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial compl…
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Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$μ$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.
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Submitted 28 April, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Broad diversity of near-infrared single-photon emitters in silicon
Authors:
A. Durand,
Y. Baron,
W. Redjem,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
J. -M. Gérard,
I. Robert-Philip,
M. Abbarchi,
V. Jacques,
G. Cassabois,
A. Dréau
Abstract:
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse the…
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We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
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Submitted 23 October, 2020; v1 submitted 21 October, 2020;
originally announced October 2020.
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Optimal architecture for diamond-based wide-field thermal imaging
Authors:
R. Tanos,
W. Akhtar,
S. Monneret,
F. Favaro de Oliveira,
G. Seniutinas,
M. Munsch,
P. Maletinsky,
L. le Gratiet,
I. Sagnes,
A. Dréau,
C. Gergely,
V. Jacques,
G. Baffou,
I. Robert-Philip
Abstract:
Nitrogen-Vacancy centers in diamond possess an electronic spin resonance that strongly depends on temperature, which makes them efficient temperature sensor with a sensitivity down to a few mK/$\sqrt{\rm Hz}$. However, the high thermal conductivity of the host diamond may strongly damp any temperature variations, leading to invasive measurements when probing local temperature distributions. In vie…
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Nitrogen-Vacancy centers in diamond possess an electronic spin resonance that strongly depends on temperature, which makes them efficient temperature sensor with a sensitivity down to a few mK/$\sqrt{\rm Hz}$. However, the high thermal conductivity of the host diamond may strongly damp any temperature variations, leading to invasive measurements when probing local temperature distributions. In view of determining possible and optimal configurations for diamond-based wide-field thermal imaging, we here investigate, both experimentally and numerically, the effect of the presence of diamond on microscale temperature distributions. Three geometrical configurations are studied: a bulk diamond substrate, a thin diamond layer bonded on quartz and diamond nanoparticles dispersed on quartz. We show that the use of bulk diamond substrates for thermal imaging is highly invasive, in the sense that it prevents any substantial temperature increase. Conversely, thin diamond layers partly solve this issue and could provide a possible alternative for microscale thermal imaging. Dispersions of diamond nanoparticles throughout the sample appear as the most relevant approach as they do not affect the temperature distribution, although NV centers in nanodiamonds yield lower temperature sensitivities compared to bulk diamond.
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Submitted 27 January, 2020;
originally announced January 2020.
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Single artificial atoms in silicon emitting at telecom wavelengths
Authors:
W. Redjem,
A. Durand,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
H. S. Nguyen,
S. Cueff,
J. -M. Gérard,
I. Robert-Philip,
B. Gil,
D. Caliste,
P. Pochet,
M. Abbarchi,
V. Jacques,
A. Dréau,
G. Cassabois
Abstract:
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch…
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Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
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Submitted 7 January, 2020;
originally announced January 2020.
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Weak signal enhancement by non-linear resonance control in a forced nano-electromechanical resonator
Authors:
Avishek Chowdhury,
Marcel G. Clerc,
Sylvain Barbay,
Isabelle Robert-Philip,
Remy Braive
Abstract:
Driven non-linear resonators can display sharp resonances or even multistable behaviours amenable to induce strong enhancements of weak signals. Such enhancements can make use of the phenomenon of vibrational resonance whereby a weak low-frequency signal applied to a bistable resonator can be amplified by driving the non-linear oscillator with another appropriately-adjusted non-resonant high-frequ…
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Driven non-linear resonators can display sharp resonances or even multistable behaviours amenable to induce strong enhancements of weak signals. Such enhancements can make use of the phenomenon of vibrational resonance whereby a weak low-frequency signal applied to a bistable resonator can be amplified by driving the non-linear oscillator with another appropriately-adjusted non-resonant high-frequency field. Here we demonstrate the resonant enhancement of a weak signal by use of a vibrational force yet in a monostable system consisting of a driven nano-electromechanical nonlinear resonator. The oscillator is subjected to a strong quasi-resonant drive and to two additional tones: a weak signal at lower frequency and a non-resonant driving at an intermediate frequency. We show experimentally and theoretically a significant enhancement of the weak signal thanks to the occurence of vibrational resonance enabled by the presence of the intermediate frequency driving. We analyse this phenomenon in terms of coherent nonlinear resonance manipulation. Our results illustrate a general mechanism which may have applications in the fields of radio-frequency signal processing or sensing for instance.
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Submitted 1 October, 2019;
originally announced October 2019.
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Phase Stochastic Resonance in a forced nano-electromechanical oscillator
Authors:
Avishek Chowdhury,
Sylvain Barbay,
Marcel G. Clerc,
Isabelle Robert-Philip,
Rémy Braive
Abstract:
Stochastic resonance is a general phenomenon usually observed in one-dimensional, amplitude modulated, bistable systems.We show experimentally the emergence of phase stochastic resonance in the bidimensional response of a forced nano-electromechanical membrane by evidencing the enhancement of a weak phase modulated signal thanks to the addition of phase noise. Based on a general forced Duffing osc…
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Stochastic resonance is a general phenomenon usually observed in one-dimensional, amplitude modulated, bistable systems.We show experimentally the emergence of phase stochastic resonance in the bidimensional response of a forced nano-electromechanical membrane by evidencing the enhancement of a weak phase modulated signal thanks to the addition of phase noise. Based on a general forced Duffing oscillator model, we demonstrate experimentally and theoretically that phase noise acts multiplicatively inducing important physical consequences. These results may open interesting prospects for phase noise metrology or coherent signal transmission applications in nanomechanical oscillators. Moreover, our approach, due to its general character, may apply to various systems.
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Submitted 1 February, 2018;
originally announced February 2018.
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High-finesse Fabry-Perot cavities with bidimensional Si$_3$N$_4$ photonic-crystal slabs
Authors:
Xu Chen,
Clément Chardin,
Kevin Makles,
Charles Caër,
Sheon Chua,
Rémy Braive,
Isabelle Robert-Philip,
Tristan Briant,
Pierre-Francois Cohadon,
Antoine Heidmann,
Thibaut Jacqmin,
Samuel Deléglise
Abstract:
Light scattering by a two-dimensional photonic crystal slab (PCS) can result in dramatic interference effects associated with Fano resonances. Such devices offer appealing alternatives to distributed Bragg reflectors or filters for various applications such as optical wavelength and polarization filters, reflectors, semiconductor lasers, photodetectors, bio-sensors, or non-linear optical component…
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Light scattering by a two-dimensional photonic crystal slab (PCS) can result in dramatic interference effects associated with Fano resonances. Such devices offer appealing alternatives to distributed Bragg reflectors or filters for various applications such as optical wavelength and polarization filters, reflectors, semiconductor lasers, photodetectors, bio-sensors, or non-linear optical components. Suspended PCSs also find natural applications in the field of optomechanics, where the mechanical modes of a suspended slab interact via radiation pressure with the optical field of a high finesse cavity. The reflectivity and transmission properties of a defect-free suspended PCS around normal incidence can be used to couple out-of-plane mechanical modes to an optical field by integrating it in a free space cavity. Here, we demonstrate the successful implementation of a PCS reflector on a high-tensile stress Si$_3$N$_4$ nanomembrane. We illustrate the physical process underlying the high reflectivity by measuring the photonic crystal band diagram. Moreover, we introduce a clear theoretical description of the membrane scattering properties in the presence of optical losses. By embedding the PCS inside a high-finesse cavity, we fully characterize its optical properties. The spectrally, angular, and polarization resolved measurements demonstrate the wide tunability of the membrane's reflectivity, from nearly 0 to 99.9470~$\pm$ 0.0025 \%, and show that material absorption is not the main source of optical loss. Moreover, the cavity storage time demonstrated in this work exceeds the mechanical period of low-order mechanical drum modes. This so-called resolved sideband condition is a prerequisite to achieve quantum control of the mechanical resonator with light.
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Submitted 13 June, 2016; v1 submitted 23 March, 2016;
originally announced March 2016.
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2D photonic-crystal optomechanical nanoresonator
Authors:
K. Makles,
T. Antoni,
A. G. Kuhn,
S. Deléglise,
T. Briant,
P. F. Cohadon,
R. Braive,
G. Beaudoin,
L. Pinard,
C. Michel,
V. Dolique,
R. Flaminio,
G. Cagnoli,
I. Robert-Philip,
A. Heidmann
Abstract:
We present the optical optimization of an optomechanical device based on a suspended InP membrane patterned with a 2D near-wavelength grating (NWG) based on a 2D photonic-crystal geometry. We first identify by numerical simulation a set of geometrical parameters providing a reflectivity higher than 99.8 % over a 50-nm span. We then study the limitations induced by the finite value of the optical w…
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We present the optical optimization of an optomechanical device based on a suspended InP membrane patterned with a 2D near-wavelength grating (NWG) based on a 2D photonic-crystal geometry. We first identify by numerical simulation a set of geometrical parameters providing a reflectivity higher than 99.8 % over a 50-nm span. We then study the limitations induced by the finite value of the optical waist and lateral size of the NWG pattern using different numerical approaches. The NWG grating, pierced in a suspended InP 265 nm-thick membrane, is used to form a compact microcavity involving the suspended nano-membrane as end mirror. The resulting cavity has a waist size smaller than 10 $μ$m and a finesse in the 200 range. It is used to probe the Brownian motion of the mechanical modes of the nanomembrane.
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Submitted 23 October, 2014;
originally announced October 2014.
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Unequivocal differentiation of coherent and chaotic light through interferometric photon correlation measurements
Authors:
Armand Lebreton,
Izo Abram,
Rémy Braive,
Isabelle Sagnes,
Isabelle Robert-Philip,
Alexios Beveratos
Abstract:
We present a novel experimental technique that can differentiate unequivocally between chaotic light and coherent light with amplitude fluctuations, and thus permits to characterize unambiguously the output of a laser. This technique consists of measuring the second-order intensity cross-correlation at the outputs of an unbalanced Michelson interferometer. It is applied to a chaotic light source a…
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We present a novel experimental technique that can differentiate unequivocally between chaotic light and coherent light with amplitude fluctuations, and thus permits to characterize unambiguously the output of a laser. This technique consists of measuring the second-order intensity cross-correlation at the outputs of an unbalanced Michelson interferometer. It is applied to a chaotic light source and to the output of a semiconductor nanolaser whose "standard" intensity correlation function above-threshold displays values compatible with a mixture of coherent and chaotic light. Our experimental results demonstrate that the output of such lasers is not partially chaotic but is indeed a coherent state with amplitude fluctuations.
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Submitted 28 March, 2013;
originally announced March 2013.
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Theory of Interferometric Photon-Correlation Measurements: Differentiating Coherent from Chaotic Light
Authors:
A. Lebreton,
I. Abram,
R. Braive,
I. Sagnes,
I. Robert-Philip,
A. Beveratos
Abstract:
Interferometric photon-correlation measurements, which correspond to the second-order intensity cross-correlations between the two output ports of an unbalanced Michelson interferometer, are sensitive to both amplitude and phase fluctuations of an incoming beam of light. Here, we present the theoretical framework behind these measurements and show that they can be used to unambiguously differentia…
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Interferometric photon-correlation measurements, which correspond to the second-order intensity cross-correlations between the two output ports of an unbalanced Michelson interferometer, are sensitive to both amplitude and phase fluctuations of an incoming beam of light. Here, we present the theoretical framework behind these measurements and show that they can be used to unambiguously differentiate a coherent wave undergoing dynamical amplitude and phase fluctuations from a chaotic state of light. This technique may thus be used to characterize the output of nanolasers and monitor the onset of coherent emission.
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Submitted 28 February, 2013;
originally announced February 2013.
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Stochastically sustained population oscillations in high-beta nanolasers
Authors:
A. Lebreton,
I. Abram,
N. Takemura,
M. Kuwata-Gonokami,
I. Robert-Philip,
A. Beveratos
Abstract:
Non-linear dynamical systems involving small populations of individuals may sustain oscillations in the population densities arising from the discrete changes in population numbers due to random events. By applying these ideas to nanolasers operating with small numbers of emitting dipoles and photons at threshold, we show that such lasers should display photon and dipole population cycles above th…
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Non-linear dynamical systems involving small populations of individuals may sustain oscillations in the population densities arising from the discrete changes in population numbers due to random events. By applying these ideas to nanolasers operating with small numbers of emitting dipoles and photons at threshold, we show that such lasers should display photon and dipole population cycles above threshold, which should be observable as a periodic modulation in the second-order correlation function of the nanolaser output. Such a modulation was recently reported in a single-mode vertical-cavity surface-emitting semiconductor laser.
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Submitted 14 December, 2012;
originally announced December 2012.
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Deformable two-dimensional photonic crystal slab for cavity optomechanics
Authors:
T. Antoni,
A. G. Kuhn,
T. Briant,
P. -F. Cohadon,
A. Heidmann,
R. Braive,
A. Beveratos,
I. Abram,
L. Le Gatiet,
I. Sagnes,
I. Robert-Philip
Abstract:
We have designed photonic crystal suspended membranes with optimized optical and mechanical properties for cavity optomechanics. Such resonators sustain vibration modes in the megahertz range with quality factors of a few thousand. Thanks to a two-dimensional square lattice of holes, their reflectivity at normal incidence at 1064 nm reaches values as high as 95%. These two features, combined with…
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We have designed photonic crystal suspended membranes with optimized optical and mechanical properties for cavity optomechanics. Such resonators sustain vibration modes in the megahertz range with quality factors of a few thousand. Thanks to a two-dimensional square lattice of holes, their reflectivity at normal incidence at 1064 nm reaches values as high as 95%. These two features, combined with the very low mass of the membrane, open the way to the use of such periodic structures as deformable end-mirrors in Fabry-Perot cavities for the investigation of cavity optomechanical effects
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Submitted 1 July, 2011;
originally announced July 2011.
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Higher-order photon correlations in pulsed photonic crystal nanolasers
Authors:
David Elvira,
Xavier Hachair,
V. Verma,
Remy Braive,
Gregoire Beaudoin,
Isabelle Robert-Philip,
Isabelle Sagnes,
Burm Baek,
Sae Woo Nam,
Eric A. Dauler,
Izo Abram,
Martin J. Stevens,
Alexios Beveratos
Abstract:
We report on the higher-order photon correlations of a high-$β$ nanolaser under pulsed excitation at room temperature. Using a multiplexed four-element superconducting single photon detector we measured g$^{(n)}(\vec{0})$ with $n$=2,3,4. All orders of correlation display partially chaotic statistics, even at four times the threshold excitation power. We show that this departure from coherence and…
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We report on the higher-order photon correlations of a high-$β$ nanolaser under pulsed excitation at room temperature. Using a multiplexed four-element superconducting single photon detector we measured g$^{(n)}(\vec{0})$ with $n$=2,3,4. All orders of correlation display partially chaotic statistics, even at four times the threshold excitation power. We show that this departure from coherence and Poisson statistics is due to the quantum fluctuations associated with the small number of dipoles and photons involved in the lasing process.
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Submitted 7 June, 2011;
originally announced June 2011.
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Optomechanical coupling in a two-dimensional photonic crystal defect cavity
Authors:
Emanuel Gavartin,
Remy Braive,
Isabelle Sagnes,
Olivier Arcizet,
Alexios Beveratos,
Tobias J. Kippenberg,
Isabelle Robert-Philip
Abstract:
Periodically structured materials can sustain both optical and mechanical modes. Here we investigate and observe experimentally the optomechanical properties of a conventional two-dimensional suspended photonic crystal defect cavity with a mode volume of $\sim$$3(λ/n)^{3}$. Two families of mechanical modes are observed: flexural modes, associated to the motion of the whole suspended membrane, and…
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Periodically structured materials can sustain both optical and mechanical modes. Here we investigate and observe experimentally the optomechanical properties of a conventional two-dimensional suspended photonic crystal defect cavity with a mode volume of $\sim$$3(λ/n)^{3}$. Two families of mechanical modes are observed: flexural modes, associated to the motion of the whole suspended membrane, and localized modes with frequencies in the GHz regime corresponding to localized phonons in the optical defect cavity of diffraction-limited size. We demonstrate direct measurements of the optomechanical vacuum coupling rate using a frequency calibration technique. The highest measured values exceed 250 kHz, demonstrating strong coupling of optical and mechanical modes in such structures.
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Submitted 29 November, 2010;
originally announced November 2010.
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Metal-coated nano-cylinder cavity for broadband nonclassical light emission
Authors:
I. Maksymov,
Mondher Besbes,
Jean-Paul Hugonin,
J. Yang,
Alexios Beveratos,
Isabelle Sagnes,
Isabelle Robert-Philip,
Philippe Lalanne
Abstract:
A novel metal-coated nanocylinder-cavity architecture fully compatible with III-V GaInAs technology and benefiting from a broad spectral range enhancement of the localdensity- of-states is proposed as an integrated source of non-classical light. Due to a judicious selection of the mode volume, the cavity combines good collection efficiency (\gg 45%), large Purcell factors (\gg 15) over a 80-nm spe…
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A novel metal-coated nanocylinder-cavity architecture fully compatible with III-V GaInAs technology and benefiting from a broad spectral range enhancement of the localdensity- of-states is proposed as an integrated source of non-classical light. Due to a judicious selection of the mode volume, the cavity combines good collection efficiency (\gg 45%), large Purcell factors (\gg 15) over a 80-nm spectral range, and a low sensitivity to inevitable spatial mismatches between the single emitter and the cavity mode. This represents a decisive step towards the implementation of reliable solid-state devices for the generation of entangled photon pairs at infrared wavelengths.
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Submitted 3 November, 2010;
originally announced November 2010.
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Definition of the stimulated emission threshold in high-$β$ nanoscale lasers through phase-space reconstruction
Authors:
Hachair Xavier,
Rémy Braive,
Gian-Lucca Lippi,
Elvira David,
Luc Le Gratiet,
Aristide Lemaître,
Abram Izo,
Isabelle Sagnes,
Isabelle Robert-Philip,
Alexios Beveratos
Abstract:
Nanoscale lasers sustain few optical modes so that the fraction of spontaneous emission $β$ funnelled into the useful (lasing) mode is high (of the order of few 10$^{-1}$) and the threshold, which traditionally corresponds to an abrupt kink in the light in- light out curve, becomes ill-defined. We propose an alternative definition of the threshold, based on the dynamical response of the laser, whi…
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Nanoscale lasers sustain few optical modes so that the fraction of spontaneous emission $β$ funnelled into the useful (lasing) mode is high (of the order of few 10$^{-1}$) and the threshold, which traditionally corresponds to an abrupt kink in the light in- light out curve, becomes ill-defined. We propose an alternative definition of the threshold, based on the dynamical response of the laser, which is valid even for $β=1$ lasers. The laser dynamics is analyzed through a reconstruction of its phase-space trajectory for pulsed excitation. Crossing the threshold brings about a change in the shape of the trajectory and in the area contained in it. An unambiguous definition of the threshold in terms of this change is shown theoretically and illustrated experimentally in a photonic crystal laser.
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Submitted 16 February, 2011; v1 submitted 10 May, 2010;
originally announced May 2010.
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Demonstration of coherent emission from high-$β$ photonic crystal nanolasers at room temperature
Authors:
Richard Hostein,
Remy Braive,
Luc Le Gratiet,
Anne Talneau,
Gregoire Beaudoin,
Isabelle Robert-Philip,
Isabelle Sagnes,
Alexios Beveratos
Abstract:
We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emissi…
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We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emission is observed, and coherent emission is obtained at 8 times the threshold power.
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Submitted 25 March, 2010;
originally announced March 2010.
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Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band
Authors:
Richard Hostein,
Rémy Braive,
Matthieu Larqué,
Ko-Hsin Lee,
Anne Talneau,
Luc Le Gratiet,
Isabelle Robert-Philip,
Isabelle Sagnes,
Alexios Beveratos
Abstract:
We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancem…
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We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.
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Submitted 25 March, 2009;
originally announced March 2009.
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Transient chirp in high speed photonic crystal quantum dots lasers with controlled spontaneous emission
Authors:
Remy Braive,
Sylvain Barbay,
Isabelle Sagnes,
Audrey Miard,
Isabelle Robert-Philip,
Alexios Beveratos
Abstract:
We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic crystal slab cavity, embedding self-assembled quantum dots as gain material. The implementation of cavity electrodynamics effects increases significantly the large signal modulation bandwidth, with measured modulation speeds of the order of 10 GHz while kee** an ex…
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We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic crystal slab cavity, embedding self-assembled quantum dots as gain material. The implementation of cavity electrodynamics effects increases significantly the large signal modulation bandwidth, with measured modulation speeds of the order of 10 GHz while kee** an extinction ratio of 19 dB. A linear transient wavelength shift is reported, corresponding to a chirp of less than 100 pm for a 35-ps laser pulse. We observe that the chirp characteristics are independent of the repetition rate of the laser up to 10 GHz.
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Submitted 9 December, 2008;
originally announced December 2008.
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Bell inequalities and density matrix for polarization entangled photons out of a two-photon cascade in a single quantum dot
Authors:
Matthieu Larqué,
Isabelle Robert-Philip,
Alexios Beveratos
Abstract:
We theoretically investigate the joint photodetection probabilities of the biexciton-exciton cascade in single semiconductor quantum dots and analytically derive the density matrix and the Bell's inequalities of the entangled state. Our model includes different mechanisms that may spoil or even destroy entanglement such as dephasing, energy splitting of the relay excitonic states and incoherent…
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We theoretically investigate the joint photodetection probabilities of the biexciton-exciton cascade in single semiconductor quantum dots and analytically derive the density matrix and the Bell's inequalities of the entangled state. Our model includes different mechanisms that may spoil or even destroy entanglement such as dephasing, energy splitting of the relay excitonic states and incoherent population exchange between these relay levels. We explicitly relate the fidelity of entanglement to the dynamics of these processes and derive a threshold for violation of Bell's inequalities. Applied to standard InAs/GaAs self-assembled quantum dots, our model indicates that spontaneous emission enhancement of the excitonic states by cavity effects increases the fidelity of entanglement to a value allowing for violation of Bell's inequalities.
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Submitted 9 April, 2008; v1 submitted 23 January, 2008;
originally announced January 2008.
