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Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization
Authors:
Parth Garud,
Kiumars Aryana,
Cosmin Constantin Popescu,
Steven Vitale,
Rashi Sharma,
Kathleen Richardson,
Tian Gu,
Juejun Hu,
Hyun Jung Kim
Abstract:
Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for develo** more efficient and compact optical systems for a broad range of applications including…
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Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for develo** more efficient and compact optical systems for a broad range of applications including sensing, imaging, telecommunications, and data storage. Chalcogenide-based phase change materials (PCMs) have shown great promise due to their stable, non-volatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. In this paper, we report on the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching, extending the operational lifetime of the device beyond 13,000 switching events. To achieve this, we have developed a computer-aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process, thereby significantly enhancing the lifetime of these reconfigurable devices. Our findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.
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Submitted 22 April, 2024;
originally announced April 2024.
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Electrically reconfigurable phase-change transmissive metasurface
Authors:
Cosmin Constantin Popescu,
Kiumars Aryana,
Parth Garud,
Khoi Phuong Dao,
Steven Vitale,
Vladimir Liberman,
Hyung-Bin Bae,
Tae-Woo Lee,
Myungkoo Kang,
Kathleen A. Richardson,
Carlos A. Rios Ocampo,
Yifei Zhang,
Tian Gu,
Juejun Hu,
Hyun Jung Kim
Abstract:
Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical properties of components like filters, lenses, and beam steering devices could result in dramatic reductions in size, weight, and power consumption in future optoe…
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Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical properties of components like filters, lenses, and beam steering devices could result in dramatic reductions in size, weight, and power consumption in future optoelectronic devices. Among the potential candidates for reconfigurable optics, chalcogenide-based phase change materials (PCMs) offer great promise due to their non-volatile and analogue switching characteristics. Although PCM have found widespread use in electronic data storage, these memory devices are deeply sub-micron-sized. To incorporate phase change materials into free-space optical components, it is essential to scale them up to beyond several hundreds of microns while maintaining reliable switching characteristics. This study demonstrated a non-mechanical, non-volatile transmissive filter based on low-loss PCMs with a 200 $μ$m$ \times $200 $μ$m switching area. The device/metafilter can be consistently switched between low- and high-transmission states using electrical pulses with a switching contrast ratio of 5.5 dB. The device was reversibly switched for 1250 cycles before accelerated degradation took place. The work represents an important step toward realizing free-space reconfigurable optics based on PCMs.
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Submitted 16 December, 2023;
originally announced December 2023.
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An Open-Source Multi-functional Testing Platform for Optical Phase Change Materials
Authors:
Cosmin-Constantin Popescu,
Khoi Phuong Dao,
Luigi Ranno,
Brian Mills,
Louis Martin,
Yifei Zhang,
David Bono. Brian Neltner,
Tian Gu,
Juejun Hu,
Kiumars Aryana,
William M. Humphreys,
Hyun Jung Kim,
Steven Vitale,
Paul Miller,
Christopher Roberts,
Sarah Geiger,
Dennis Callahan,
Michael Moebius,
Myungkoo Kang,
Kathleen Richardson,
Carlos A. Ríos Ocampo
Abstract:
Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. In this article, we introduce a multi-functional silicon microheater platform capable of in situ mea…
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Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. In this article, we introduce a multi-functional silicon microheater platform capable of in situ measurement of structural, kinetic, optical, and thermal properties of these materials. The platform can be fabricated leveraging industry-standard silicon foundry manufacturing processes. We fully open-sourced this platform, including complete hardware design and associated software codes.
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Submitted 12 July, 2023;
originally announced July 2023.
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Tunable quantum emitters on large-scale foundry silicon photonics
Authors:
Hugo Larocque,
Mustafa Atabey Buyukkaya,
Carlos Errando-Herranz,
Samuel Harper,
Jacques Carolan,
Chang-Min Lee,
Christopher J. K. Richardson,
Gerald L. Leake,
Daniel J. Coleman,
Michael L. Fanto,
Edo Waks,
Dirk Englund
Abstract:
Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating at…
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Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.
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Submitted 29 June, 2023; v1 submitted 10 June, 2023;
originally announced June 2023.
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The LHCb upgrade I
Authors:
LHCb collaboration,
R. Aaij,
A. S. W. Abdelmotteleb,
C. Abellan Beteta,
F. Abudinén,
C. Achard,
T. Ackernley,
B. Adeva,
M. Adinolfi,
P. Adlarson,
H. Afsharnia,
C. Agapopoulou,
C. A. Aidala,
Z. Ajaltouni,
S. Akar,
K. Akiba,
P. Albicocco,
J. Albrecht,
F. Alessio,
M. Alexander,
A. Alfonso Albero,
Z. Aliouche,
P. Alvarez Cartelle,
R. Amalric,
S. Amato
, et al. (1298 additional authors not shown)
Abstract:
The LHCb upgrade represents a major change of the experiment. The detectors have been almost completely renewed to allow running at an instantaneous luminosity five times larger than that of the previous running periods. Readout of all detectors into an all-software trigger is central to the new design, facilitating the reconstruction of events at the maximum LHC interaction rate, and their select…
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The LHCb upgrade represents a major change of the experiment. The detectors have been almost completely renewed to allow running at an instantaneous luminosity five times larger than that of the previous running periods. Readout of all detectors into an all-software trigger is central to the new design, facilitating the reconstruction of events at the maximum LHC interaction rate, and their selection in real time. The experiment's tracking system has been completely upgraded with a new pixel vertex detector, a silicon tracker upstream of the dipole magnet and three scintillating fibre tracking stations downstream of the magnet. The whole photon detection system of the RICH detectors has been renewed and the readout electronics of the calorimeter and muon systems have been fully overhauled. The first stage of the all-software trigger is implemented on a GPU farm. The output of the trigger provides a combination of totally reconstructed physics objects, such as tracks and vertices, ready for final analysis, and of entire events which need further offline reprocessing. This scheme required a complete revision of the computing model and rewriting of the experiment's software.
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Submitted 17 May, 2023;
originally announced May 2023.
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Electrical Programmable Multi-Level Non-volatile Photonic Random-Access Memory
Authors:
Jiawei Meng,
Yaliang Gui,
Behrouz Movahhed Nouri,
Gelu Comanescu,
Xiaoxuan Ma,
Yifei Zhang,
Cosmin-Constantin Popescu,
Myungkoo Kang,
Mario Miscuglio,
Nicola Peserico,
Kathleen A. Richardson,
Juejun Hu,
Hamed Dalir,
Volker J. Sorger
Abstract:
Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumptio…
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Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multi-state electrically-programmed low-loss non-volatile photonic memory based on a broadband transparent phase change material (Ge2Sb2Se5, GSSe) with ultra-low absorption in the amorphous state. A zero-static-power and electrically-programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/μm and an ultra-low insertion loss of total 0.12 dB for a 4-bit memory showing a 100x improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual micro-heaters validating performance tradeoffs. Experimentally we demonstrate a half-a million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks, LiDAR, and sensors for example.
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Submitted 21 June, 2022; v1 submitted 24 March, 2022;
originally announced March 2022.
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Plug-and-play quantum devices with efficient fiber-quantum dot interface
Authors:
Woong Bae Jeon,
Jong Sung Moon,
Kyu-Young Kim,
Young-Ho Ko,
Christopher J. K. Richardson,
Edo Waks,
Je-Hyung Kim
Abstract:
Incorporating solid-state quantum emitters into optical fiber networks enables the long-distance transmission of quantum information and the remote connection of distributed quantum nodes. However, interfacing quantum emitters with fiber optics encounters several challenges, including low coupling efficiency and stability. Here, we demonstrate a highly efficient fiber-interfacing photonic device t…
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Incorporating solid-state quantum emitters into optical fiber networks enables the long-distance transmission of quantum information and the remote connection of distributed quantum nodes. However, interfacing quantum emitters with fiber optics encounters several challenges, including low coupling efficiency and stability. Here, we demonstrate a highly efficient fiber-interfacing photonic device that directly launches single photons from quantum dots into a standard FC/PC-connectorized single-mode fiber (SMF28). Optimally designed photonic structures based on hole gratings produce an ultra-narrow directional beam that matches the small numerical aperture of a single-mode fiber. A pick-and-place technique selectively integrates a single miniaturized device into the core of the fiber. Our approach realizes a plug-and-play single-photon device that does not require any optical alignment and thus guarantees long-term stability. The results thus represent a major step toward practical and reliable quantum lights across a fiber network.
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Submitted 26 February, 2022;
originally announced February 2022.
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Waveguide-Integrated Mid-Infrared Photodetection using Graphene on a Scalable Chalcogenide Glass Platform
Authors:
Jordan Goldstein,
Hongtao Lin,
Skylar Deckoff-Jones,
Marek Hempel,
Ang-Yu Lu,
Kathleen A. Richardson,
Tomas Palacios,
**g Kong,
Juejun Hu,
Dirk Englund
Abstract:
The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black…
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The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO$_2$ substrates limit operation to wavelengths $λ\lesssim4\,μ\textrm{m}$. Here we overcome these challenges with a chalcogenide glass-on-CaF$_2$ PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to $λ=5.2\,μ\textrm{m}$ with a Johnson noise-limited noise-equivalent power of $1.1\,\mathrm{nW}/\mathrm{Hz}^{1/2}$, no fall-off in photoresponse up to $f = 1\,\mathrm{MHz}$, and a predicted 3-dB bandwidth of $f_{3\textrm{dB}}>1\,\mathrm{GHz}$. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications.
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Submitted 29 December, 2021;
originally announced December 2021.
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Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials
Authors:
Carlos Ríos,
Qingyang Du,
Yifei Zhang,
Cosmin-Constantin Popescu,
Mikhail Y. Shalaginov,
Paul Miller,
Christopher Roberts,
Myungkoo Kang,
Kathleen A. Richardson,
Tian Gu,
Steven A. Vitale,
Juejun Hu
Abstract:
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state…
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Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, a bi-stable transparent phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $π$/$μ$m and a low insertion loss of 0.3 dB/$π$, which can be further improved upon streamlined design. We also pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultra-compact PCM phase shifter.
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Submitted 21 March, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
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Deep Convolutional Neural Networks to Predict Mutual Coupling Effects in Metasurfaces
Authors:
Sensong An,
Bowen Zheng,
Mikhail Y. Shalaginov,
Hong Tang,
Hang Li,
Li Zhou,
Yunxi Dong,
Mohammad Haerinia,
Anuradha Murthy Agarwal,
Clara Rivero-Baleine,
Myungkoo Kang,
Kathleen A. Richardson,
Tian Gu,
Juejun Hu,
Clayton Fowler,
Hualiang Zhang
Abstract:
Metasurfaces have provided a novel and promising platform for the realization of compact and large-scale optical devices. The conventional metasurface design approach assumes periodic boundary conditions for each element, which is inaccurate in most cases since the near-field coupling effects between elements will change when surrounded by non-identical structures. In this paper, we propose a deep…
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Metasurfaces have provided a novel and promising platform for the realization of compact and large-scale optical devices. The conventional metasurface design approach assumes periodic boundary conditions for each element, which is inaccurate in most cases since the near-field coupling effects between elements will change when surrounded by non-identical structures. In this paper, we propose a deep learning approach to predict the actual electromagnetic (EM) responses of each target meta-atom placed in a large array with near-field coupling effects taken into account. The predicting neural network takes the physical specifications of the target meta-atom and its neighbors as input, and calculates its phase and amplitude in milliseconds. This approach can be applied to explain metasurfaces' performance deterioration caused by mutual coupling and further used to optimize their efficiencies once combined with optimization algorithms. To demonstrate the efficacy of this methodology, we obtain large improvements in efficiency for a beam deflector and a metalens over the conventional design approach. Moreover, we show the correlations between a metasurface's performance and its design errors caused by mutual coupling are not bound to certain specifications (materials, shapes, etc.). As such, we envision that this approach can be readily applied to explore the mutual coupling effects and improve the performance of various metasurface designs.
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Submitted 2 February, 2021;
originally announced February 2021.
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Achieving a quantum smart workforce
Authors:
Clarice D. Aiello,
D. D. Awschalom,
Hannes Bernien,
Tina Brower-Thomas,
Kenneth R. Brown,
Todd A. Brun,
Justin R. Caram,
Eric Chitambar,
Rosa Di Felice,
Michael F. J. Fox,
Stephan Haas,
Alexander W. Holleitner,
Eric R. Hudson,
Jeffrey H. Hunt,
Robert Joynt,
Scott Koziol,
H. J. Lewandowski,
Douglas T. McClure,
Jens Palsberg,
Gina Passante,
Kristen L. Pudenz,
Christopher J. K. Richardson,
Jessica L. Rosenberg,
R. S. Ross,
Mark Saffman
, et al. (7 additional authors not shown)
Abstract:
Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. Thi…
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Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. This manuscript not only addresses policy makers and funding agencies (both public and private and from the regional to the international level) but also contains needs identified by industry leaders and discusses the difficulties inherent in creating an inclusive QISE curriculum. We report on the status of eighteen post-secondary education programs in QISE and provide guidance for building new programs. Lastly, we encourage the development of a comprehensive strategic plan for quantum education and workforce development as a means to make the most of the ongoing substantial investments being made in QISE.
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Submitted 23 October, 2020;
originally announced October 2020.
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Nonlinear Mid-infrared Metasurface based on a Phase-Change Material
Authors:
Fuyong Yue,
Riccardo Piccoli,
Mikhail Y. Shalaginov,
Tian Gu,
Kathleen Richardson,
Roberto Morandotti,
Juejun Hu,
Luca Razzari
Abstract:
The mid-wave infrared (MWIR) spectral region (3-5 μm) is important to a vast variety of applications in imaging, sensing, spectroscopy, surgery, and optical communications. Efficient third-harmonic generation (THG), converting light from the MWIR range into the near-infrared, a region with mature optical detection and manipulation technologies, offers the opportunity to mitigate a commonly recogni…
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The mid-wave infrared (MWIR) spectral region (3-5 μm) is important to a vast variety of applications in imaging, sensing, spectroscopy, surgery, and optical communications. Efficient third-harmonic generation (THG), converting light from the MWIR range into the near-infrared, a region with mature optical detection and manipulation technologies, offers the opportunity to mitigate a commonly recognized limitation of current MWIR systems. In this work, we present the possibility of boosting THG in the MWIR through a metasurface design. Specifically, we demonstrate a 30-fold enhancement in a highly nonlinear phase change material Ge2Sb2Se4Te1 (GSST), by patterning arrays of subwavelength cylinders supporting a magnetic dipolar resonance. The unprecedented broadband transparency, large refractive index, and remarkably high nonlinear response, together with unique phase-change properties, make GSST-based metasurfaces an appealing solution for reconfigurable and ultra-compact nonlinear devices operating in the MWIR.
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Submitted 30 August, 2020;
originally announced August 2020.
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Electrically Reconfigurable Nonvolatile Metasurface Using Low-Loss Optical Phase Change Material
Authors:
Yifei Zhang,
Clayton Fowler,
Junhao Liang,
Bilal Azhar,
Mikhail Y. Shalaginov,
Skylar Deckoff-Jones,
Sensong An,
Jeffrey B. Chou,
Christopher M. Roberts,
Vladimir Liberman,
Myungkoo Kang,
Carlos Ríos,
Kathleen A. Richardson,
Clara Rivero-Baleine,
Tian Gu,
Hualiang Zhang,
Juejun Hu
Abstract:
Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe…
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Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe to be the first electrically reconfigurable nonvolatile metasurfaces based on O-PCMs. The O-PCM alloy used in the devices, Ge2Sb2Se4Te1 (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss, and a large reversible switching volume, enabling significantly enhanced light-matter interactions within the active O-PCM medium. Capitalizing on these favorable attributes, we demonstrated continuously tunable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering.
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Submitted 2 September, 2020; v1 submitted 15 August, 2020;
originally announced August 2020.
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Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene
Authors:
Carlos Ríos,
Yifei Zhang,
Mikhail Shalaginov,
Skylar Deckoff-Jones,
Haozhe Wang,
Sensong An,
Hualiang Zhang,
Myungkoo Kang,
Kathleen A. Richardson,
Christopher Roberts,
Jeffrey B. Chou,
Vladimir Liberman,
Steven A. Vitale,
**g Kong,
Tian Gu,
Juejun Hu
Abstract:
Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfigurat…
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Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$π$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms.
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Submitted 15 July, 2020;
originally announced July 2020.
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Positive attitudinal shifts and a narrowing gender gap: Do expertlike attitudes correlate to higher learning gains for women in the physics classroom?
Authors:
Alma Robinson,
John H. Simonetti,
Kasey Richardson,
Megan Wawro
Abstract:
A large body of research shows that using interactive engagement pedagogy in the introductory physics classroom consistently results in significant student learning gains; however, with a few exceptions, those learning gains tend not to be accompanied by more expertlike attitudes and beliefs about physics and learning physics. In fact, in both traditionally taught and active learning classroom env…
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A large body of research shows that using interactive engagement pedagogy in the introductory physics classroom consistently results in significant student learning gains; however, with a few exceptions, those learning gains tend not to be accompanied by more expertlike attitudes and beliefs about physics and learning physics. In fact, in both traditionally taught and active learning classroom environments, students often become more novicelike in their attitudes and beliefs following a semester of instruction. Further, prior to instruction, men typically score higher than women on conceptual inventories, such as the Force Concept Inventory (FCI), and more expertlike on attitudinal surveys, such as the Colorado Learning Attitudes about Science Survey (CLASS), and those gender gaps generally persist following instruction. In this paper, we analyze three years of pre-post matched data for physics majors at Virginia Tech on the FCI and the CLASS. The courses were taught using a blended pedagogical model of peer instruction, group problem solving, and direct instruction, along with an explicit focus on the importance of conceptual understanding and a growth mindset. We found that the FCI gender gap decreased, and both men and women showed positive, expertlike shifts on the CLASS. Perhaps most surprisingly, we found a meaningful correlation between a student's post- CLASS score and normalized FCI gain for women, but not for men.
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Submitted 13 January, 2021; v1 submitted 5 March, 2020;
originally announced March 2020.
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A Freeform Dielectric Metasurface Modeling Approach Based on Deep Neural Networks
Authors:
Sensong An,
Bowen Zheng,
Mikhail Y. Shalaginov,
Hong Tang,
Hang Li,
Li Zhou,
Jun Ding,
Anuradha Murthy Agarwal,
Clara Rivero-Baleine,
Myungkoo Kang,
Kathleen A. Richardson,
Tian Gu,
Juejun Hu,
Clayton Fowler,
Hualiang Zhang
Abstract:
Metasurfaces have shown promising potentials in sha** optical wavefronts while remaining compact compared to bulky geometric optics devices. Design of meta-atoms, the fundamental building blocks of metasurfaces, relies on trial-and-error method to achieve target electromagnetic responses. This process includes the characterization of an enormous amount of different meta-atom designs with differe…
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Metasurfaces have shown promising potentials in sha** optical wavefronts while remaining compact compared to bulky geometric optics devices. Design of meta-atoms, the fundamental building blocks of metasurfaces, relies on trial-and-error method to achieve target electromagnetic responses. This process includes the characterization of an enormous amount of different meta-atom designs with different physical and geometric parameters, which normally demands huge computational resources. In this paper, a deep learning-based metasurface/meta-atom modeling approach is introduced to significantly reduce the characterization time while maintaining accuracy. Based on a convolutional neural network (CNN) structure, the proposed deep learning network is able to model meta-atoms with free-form 2D patterns and different lattice sizes, material refractive indexes and thicknesses. Moreover, the presented approach features the capability to predict meta-atoms' wide spectrum responses in the timescale of milliseconds, which makes it attractive for applications such as fast meta-atom/metasurface on-demand designs and optimizations.
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Submitted 31 December, 2019;
originally announced January 2020.
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Reconfigurable all-dielectric metalens with diffraction limited performance
Authors:
Mikhail Y. Shalaginov,
Sensong An,
Yifei Zhang,
Fan Yang,
Peter Su,
Vladimir Liberman,
Jeffrey B. Chou,
Christopher M. Roberts,
Myungkoo Kang,
Carlos Rios,
Qingyang Du,
Clayton Fowler,
Anuradha Agarwal,
Kathleen Richardson,
Clara Rivero-Baleine,
Hualiang Zhang,
Juejun Hu,
Tian Gu
Abstract:
Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency especially for non mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning co…
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Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency especially for non mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning covering the full 2$π$ range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling switching of metasurfaces between two arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for active meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 $μ$m wavelength. The metalens is constructed using Ge2Sb2Se4Te1 (GSST), an O-PCM with a large refractive index contrast ($Δ$ n > 1) and unique broadband low-loss characteristics in both amorphous and crystalline states. The reconfigurable metalens features focusing efficiencies above 20% at both states for linearly polarized light and a record large switching contrast ratio of 29.5 dB. We further validated aberration-free imaging using the metalens at both optical states, which represents the first experimental demonstration of a non-mechanical active metalens with diffraction-limited performance.
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Submitted 10 December, 2019; v1 submitted 29 November, 2019;
originally announced November 2019.
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A Novel Modeling Approach for All-Dielectric Metasurfaces Using Deep Neural Networks
Authors:
Sensong An,
Clayton Fowler,
Bowen Zheng,
Mikhail Y. Shalaginov,
Hong Tang,
Hang Li,
Li Zhou,
Jun Ding,
Anuradha Murthy Agarwal,
Clara Rivero-Baleine,
Kathleen A. Richardson,
Tian Gu,
Juejun Hu,
Hualiang Zhang
Abstract:
Metasurfaces have become a promising means for manipulating optical wavefronts in flat and high-performance optical devices. Conventional metasurface device design relies on trial-and-error methods to obtain target electromagnetic (EM) response, an approach that demands significant efforts to investigate the enormous number of possible meta-atom structures. In this paper, a deep neural network app…
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Metasurfaces have become a promising means for manipulating optical wavefronts in flat and high-performance optical devices. Conventional metasurface device design relies on trial-and-error methods to obtain target electromagnetic (EM) response, an approach that demands significant efforts to investigate the enormous number of possible meta-atom structures. In this paper, a deep neural network approach is introduced that significantly improves on both speed and accuracy compared to techniques currently used to assemble metasurface-based devices. Our neural network approach overcomes three key challenges that have limited previous neural-network-based design schemes: input/output vector dimensional mismatch, accurate EM-wave phase prediction, as well as adaptation to 3-D dielectric structures, and can be generically applied to a wide variety of metasurface device designs across the entire electromagnetic spectrum. Using this new methodology, examples of neural networks capable of producing on-demand designs for meta-atoms, metasurface filters, and phase-change reconfigurable metasurfaces are demonstrated.
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Submitted 8 June, 2019;
originally announced June 2019.
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A fiber-integrated single photon source emitting at telecom wavelengths
Authors:
Chang-Min Lee,
Mustafa Atabey Buyukkaya,
Shahriar Aghaeimeibodi,
Christopher J. K. Richardson,
Edo Waks
Abstract:
Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the…
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Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.
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Submitted 13 February, 2019;
originally announced February 2019.
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Large Stark Tuning of InAs/InP Quantum Dots
Authors:
Shahriar Aghaeimeibodi,
Chang-Min Lee,
Mustafa Atabey Buyukkaya,
Christopher J. K. Richardson,
Edo Waks
Abstract:
InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to…
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InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.
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Submitted 4 December, 2018;
originally announced December 2018.
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Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics
Authors:
Yifei Zhang,
Jeffrey B. Chou,
Junying Li,
Huashan Li,
Qingyang Du,
Anupama Yadav,
Si Zhou,
Mikhail Y. Shalaginov,
Zhuoran Fang,
Huikai Zhong,
Christopher Roberts,
Paul Robinson,
Bridget Bohlin,
Carlos Ríos,
Hongtao Lin,
Myungkoo Kang,
Tian Gu,
Jamie Warner,
Vladimir Liberman,
Kathleen Richardson,
Juejun Hu
Abstract:
Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index…
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Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (delta n) and optical loss (delta k), simultaneously. The coupling of both optical properties fundamentally limits the function and performance of many potential applications. In this article, we introduce a new class of O-PCMs, Ge-Sb-Se-Te (GSST) which breaks this traditional coupling, as demonstrated with an optical figure of merit improvement of more than two orders of magnitude. The first-principle computationally optimized alloy, Ge2Sb2Se4Te1, combines broadband low optical loss (1-18.5 micron), large optical contrast (delta n = 2.0), and significantly improved glass forming ability, enabling an entirely new field of infrared and thermal photonic devices. We further leverage the material to demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio, as well as an electrically addressed, microsecond switched pixel level spatial light modulator, thereby validating its promise as a platform material for scalable nonvolatile photonics.
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Submitted 5 November, 2018; v1 submitted 1 November, 2018;
originally announced November 2018.
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Integration of Quantum Emitters with Lithium Niobate Photonics
Authors:
Shahriar Aghaeimeibodi,
Boris Desiatov,
Je-Hyung Kim,
Chang-Min Lee,
Mustafa Atabey Buyukkaya,
Aziz Karasahin,
Christopher J. K. Richardson,
Richard P. Leavitt,
Marko Lončar,
Edo Waks
Abstract:
The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulat…
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The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.
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Submitted 12 October, 2018;
originally announced October 2018.
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Super-radiant emission from quantum dots in a nanophotonic waveguide
Authors:
Je-Hyung Kim,
Shahriar Aghaeimeibodi,
Christopher J. K. Richardson,
Richard P. Leavitt,
Edo Waks
Abstract:
Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique an…
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Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between distant two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step towards establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip.
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Submitted 10 April, 2018;
originally announced April 2018.
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Hybrid integration of solid-state quantum emitters on a silicon photonic chip
Authors:
Je-Hyung Kim,
Shahriar Aghaeimeibodi,
Christopher J. K. Richardson,
Richard P. Leavitt,
Dirk Englund,
Edo Waks
Abstract:
Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum pho…
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Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.
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Submitted 12 August, 2017;
originally announced August 2017.
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Chalcogenide Glass-on-Graphene Photonics
Authors:
Hongtao Lin,
Yi Song,
Yizhong Huang,
Derek Kita,
Kaiqi Wang,
Lan Li,
Junying Li,
Hanyu Zheng,
Skylar Deckoff-Jones,
Zhengqian Luo,
Haozhe Wang,
Spencer Novak,
Anupama Yadav,
Chung-Che Huang,
Tian Gu,
Daniel Hewak,
Kathleen Richardson,
**g Kong,
Juejun Hu
Abstract:
Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D mate…
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Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators.
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Submitted 5 March, 2017;
originally announced March 2017.
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High-Q mid-infrared chalcogenide glass resonators
Authors:
Hongtao Lin,
Lan Li,
Yi Zou,
Spencer Novak,
Kathleen Richardson,
Juejun Hu
Abstract:
In this letter, we fabricated and characterized chalcogenide glass resonators monolithically integrated on mid-infrared transparent CaF2 substrates. The devices feature an intrinsic Q-factor of 4E5 at 5.2 micron wavelength, which represents the highest Q-factor reported in planar mid-infrared resonators. It is found that moisture can significantly impact the device performance when the device was…
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In this letter, we fabricated and characterized chalcogenide glass resonators monolithically integrated on mid-infrared transparent CaF2 substrates. The devices feature an intrinsic Q-factor of 4E5 at 5.2 micron wavelength, which represents the highest Q-factor reported in planar mid-infrared resonators. It is found that moisture can significantly impact the device performance when the device was exposed to an ambient environment, although the high-Q characteristics can be restored after undergoing an annealing treatment. Using these devices, we further demonstrated on-chip cavity-enhanced spectroscopy to quantify mid-IR absorption of ethanol solutions around 5.2 micron wavelength.
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Submitted 3 November, 2018; v1 submitted 13 December, 2016;
originally announced December 2016.
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Two-photon interference from independent cavity-coupled emitters on-a-chip
Authors:
Je-Hyung Kim,
Christopher J. K. Richardson,
Richard P. Leavitt,
Edo Waks
Abstract:
Interactions between solid-state quantum emitters and cavities are important for a broad range of applications in quantum communication, linear optical quantum computing, nonlinear photonics, and photonic quantum simulation. These applications often require combining many devices on a single chip with identical emission wavelengths in order to generate two-photon interference, the primary mechanis…
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Interactions between solid-state quantum emitters and cavities are important for a broad range of applications in quantum communication, linear optical quantum computing, nonlinear photonics, and photonic quantum simulation. These applications often require combining many devices on a single chip with identical emission wavelengths in order to generate two-photon interference, the primary mechanism for achieving effective photon-photon interactions. Such integration remains extremely challenging due to inhomogeneous broadening and fabrication errors that randomize the resonant frequencies of both the emitters and cavities. In this letter we demonstrate two-photon interference from independent cavity-coupled emitters on the same chip, providing a potential solution to this long-standing problem. We overcome spectral mismatch between different cavities due to fabrication errors by depositing and locally evaporating a thin layer of condensed nitrogen. We integrate optical heaters to tune individual dots within each cavity to the same resonance with better than 3 μeV of precision. Combining these tuning methods, we demonstrate two-photon interference between two devices spaced by less than 15 μm on the same chip with a post-selected visibility of 33%. These results pave the way to integrate multiple quantum light sources on the same chip to develop quantum photonic devices.
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Submitted 8 August, 2016;
originally announced August 2016.
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Two-photon interference from a bright single photon source at telecom wavelengths
Authors:
Je-Hyung Kim,
Tao Cai,
Christopher J. K. Richardson,
Richard P. Leavitt,
Edo Waks
Abstract:
Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a beamsplitter, which implements effective photon-photon interactions. However, deterministic generation of indistinguishable single photons with high brightness…
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Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a beamsplitter, which implements effective photon-photon interactions. However, deterministic generation of indistinguishable single photons with high brightness remains a challenging problem. We demonstrate two-photon interference at telecom wavelengths using an InAs/InP quantum dot in a nanophotonic cavity. The cavity enhances the quantum dot emission, resulting in a nearly Gaussian transverse mode profile with high out-coupling efficiency exceeding 36% after multi-photon correction. We also observe Purcell enhanced spontaneous emission rate up to 4. Using this source, we generate linearly polarized, high purity single photons at 1.3 micron wavelength and demonstrate the indistinguishable nature of the emission using a two-photon interference measurement, which exhibits indistinguishable visibilities of 18% without post-selection and 67% with post-selection. Our results provide a promising approach to generate bright, deterministic single photons at telecom wavelength for applications in quantum networking and quantum communication.
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Submitted 18 May, 2016; v1 submitted 17 November, 2015;
originally announced November 2015.
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High-Performance, High-Index-Contrast Chalcogenide Glass Photonics on Silicon and Unconventional Non-planar Substrates
Authors:
Yi Zou,
Danning Zhang,
Hongtao Lin,
Lan Li,
Loise Moreel,
Jie Zhou,
Qingyang Du,
Okechukwu Ogbuu,
Sylvain Danto,
J. David Musgraves,
Kathleen Richardson,
Kevin D. Dobson,
Robert Birkmire,
Juejun Hu
Abstract:
This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-index-contrast photonic structures on both silicon and plastic substrates. The fabrication technique combines low-temperature chalcogenide glass film deposition and resist-free single-step thermal nanoimprint to process low-loss (1.6 dB/cm), sub-micron single-mode waveguides with a smooth surf…
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This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-index-contrast photonic structures on both silicon and plastic substrates. The fabrication technique combines low-temperature chalcogenide glass film deposition and resist-free single-step thermal nanoimprint to process low-loss (1.6 dB/cm), sub-micron single-mode waveguides with a smooth surface finish using simple contact photolithography. Using this approach, the first chalcogenide glass micro-ring resonators are fabricated by thermal nanoimprint. The devices exhibit an ultra-high quality-factor of 400,000 near 1550 nm wavelength, which represents the highest value reported in chalcogenide glass micro-ring resonators. Furthermore, sub-micron nanoimprint of chalcogenide glass films on non-planar plastic substrates is demonstrated, which establishes the method as a facile route for monolithic fabrication of high-index-contrast devices on a wide array of unconventional substrates.
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Submitted 13 August, 2013;
originally announced August 2013.
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3-D Integrated Flexible Glass Photonics
Authors:
Lan Li,
Hongtao Lin,
Shutao Qiao,
Yi Zou,
Sylvain Danto,
Kathleen Richardson,
J. David Musgraves,
Nanshu Lu,
Juejun Hu
Abstract:
Photonic integration on plastic substrates enables emerging applications ranging from flexible interconnects to conformal sensors on biological tissues. Such devices are traditionally fabricated using pattern transfer, which is complicated and has limited integration capacity. Here we pioneered a monolithic approach to realize flexible, high-index-contrast glass photonics with significantly improv…
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Photonic integration on plastic substrates enables emerging applications ranging from flexible interconnects to conformal sensors on biological tissues. Such devices are traditionally fabricated using pattern transfer, which is complicated and has limited integration capacity. Here we pioneered a monolithic approach to realize flexible, high-index-contrast glass photonics with significantly improved processing throughput and yield. Noting that the conventional multilayer bending theory fails when laminates have large elastic mismatch, we derived a mechanics theory accounting for multiple neutral axes in one laminated structure to accurately predict its strain-optical coupling behavior. Through combining monolithic fabrication and local neutral axis designs, we fabricated devices that boast record optical performance (Q=460,000) and excellent mechanical flexibility enabling repeated bending down to sub-millimeter radius without measurable performance degradation, both of which represent major improvements over state-of-the-art. Further, we demonstrate that our technology offers a facile fabrication route for 3-D high-index-contrast photonics difficult to process using traditional methods.
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Submitted 26 July, 2013; v1 submitted 22 July, 2013;
originally announced July 2013.
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Demonstration of mid-infrared waveguide photonic crystal cavities
Authors:
Hongtao Lin,
Lan Li,
Fei Deng,
Chaoying Ni,
Sylvain Danto,
J. David Musgraves,
Kathleen Richardson,
Juejun Hu
Abstract:
We have demonstrated what we believe to be the first waveguide photonic crystal cavity operating in the mid-infrared. The devices were fabricated from Ge23Sb7S70 chalcogenide glass on CaF2 substrates by combing photolithographic patterning and focus ion beam milling. The waveguide-coupled cavities were characterized using a fiber end fire coupling method at 5.2 μm wavelength, and a loaded quality…
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We have demonstrated what we believe to be the first waveguide photonic crystal cavity operating in the mid-infrared. The devices were fabricated from Ge23Sb7S70 chalcogenide glass on CaF2 substrates by combing photolithographic patterning and focus ion beam milling. The waveguide-coupled cavities were characterized using a fiber end fire coupling method at 5.2 μm wavelength, and a loaded quality factor of ~ 2,000 was measured near the critical coupling regime.
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Submitted 20 May, 2013;
originally announced May 2013.
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Effects of alpha-effect fluctuations on simple nonlinear dynamo models
Authors:
K. J. Richardson,
M. R. E. Proctor
Abstract:
We investigate the interaction of a fluctuating alpha-effect with large-scale shear in a simple nonlinear 1-dimensional dynamo wave model. We firstly extend the calculations of Proctor (2007, MNRAS, 41, L39-L42) to include spatial variation of the fluctuations, and find that there can be a mechanism for magnetic field generation, even when the mean alpha is zero, provided the spatiotemporal spectr…
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We investigate the interaction of a fluctuating alpha-effect with large-scale shear in a simple nonlinear 1-dimensional dynamo wave model. We firstly extend the calculations of Proctor (2007, MNRAS, 41, L39-L42) to include spatial variation of the fluctuations, and find that there can be a mechanism for magnetic field generation, even when the mean alpha is zero, provided the spatiotemporal spectrum of the fluctuations has an appropriate form. We investigate mean-field dynamo action when the new term arising from the fluctuations is non-zero, and present results concerning the stability and frequency of the solutions and parity selection in the nonlinear regime. The relation between the asymptotic theory and explicit simulation of a traditional mean-field model with a fluctuating function for the alpha-effect term is discussed.
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Submitted 10 November, 2010;
originally announced November 2010.
