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A Thin Film Lithium Niobate Near-Infrared Platform for Multiplexing Quantum Nodes
Authors:
Daniel Assumpcao,
Dylan Renaud,
Aida Baradari,
Beibei Zeng,
Chawina De-Eknamkul,
C. J. Xin,
Amirhassan Shams-Ansari,
David Barton,
Bartholomeus Machielse,
Marko Loncar
Abstract:
Practical quantum networks will require quantum nodes consisting of many memory qubits. This in turn will increase the complexity of the photonic circuits needed to control each qubit and will require strategies to multiplex memories and overcome the inhomogeneous distribution of their transition frequencies. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range, compa…
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Practical quantum networks will require quantum nodes consisting of many memory qubits. This in turn will increase the complexity of the photonic circuits needed to control each qubit and will require strategies to multiplex memories and overcome the inhomogeneous distribution of their transition frequencies. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range, compatible with the transition frequencies of leading quantum memory systems, can provide solutions to these needs. In this work, we realize a VNIR thin-film lithium niobate (TFLN) integrated photonics platform with the key components to meet these requirements. These include low-loss couplers ($<$ 1 dB/facet), switches ($>$ 20 dB extinction), and high-bandwidth electro-optic modulators ($>$ 50 GHz). With these devices we demonstrate high-efficiency and CW-compatible frequency shifting ($>$ 50 $\%$ efficiency at 15 GHz), as well as simultaneous laser amplitude and frequency control through a nested modulator structure. Finally, we highlight an architecture for multiplexing quantum memories using the demonstrated TFLN components, and outline how this platform can enable a 2-order of magnitude improvement in entanglement rates over single memory nodes. Our results demonstrate that TFLN can meet the necessary performance and scalability benchmarks to enable large-scale quantum nodes.
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Submitted 6 May, 2024;
originally announced May 2024.
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Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate
Authors:
C. J. Xin,
Shengyuan Lu,
Jiayu Yang,
Amirhassan Shams-Ansari,
Boris Desiatov,
Letícia S. Magalhães,
Soumya S. Ghosh,
Erin McGee,
Dylan Renaud,
Nicholas Achuthan,
Arseniy Zvyagintsev,
David Barton III,
Neil Sinclair,
Marko Lončar
Abstract:
Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectri…
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Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectric poling, to fabrication tolerances. Here, we propose a scalable fabrication process aimed at improving the wavelength-accuracy of optical frequency mixers in TFLN. In contrast to the conventional pole-before-etch approach, we first define the waveguide in TFLN and then perform ferroelectric poling. This sequence allows for precise metrology before and after waveguide definition to fully capture the geometry imperfections. Systematic errors can also be calibrated by measuring a subset of devices to fine-tune the QPM design for remaining devices on the wafer. Using this method, we fabricated a large number of second harmonic generation devices aimed at generating 737 nm light, with 73% operating within 5 nm of the target wavelength. Furthermore, we also demonstrate thermo-optic tuning and trimming of the devices via cladding deposition, with the former bringing ~96% of tested devices to the target wavelength. Our technique enables the rapid growth of integrated quantum frequency converters, photon pair sources, and optical parametric amplifiers, thus facilitating the integration of TFLN-based nonlinear frequency mixers into more complex and functional photonic systems.
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Submitted 18 April, 2024;
originally announced April 2024.
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Integrated electro-optics on thin-film lithium niobate
Authors:
Yaowen Hu,
Di Zhu,
Shengyuan Lu,
Xinrui Zhu,
Yunxiang Song,
Dylan Renaud,
Daniel Assumpcao,
Rebecca Cheng,
CJ Xin,
Matthew Yeh,
Hana Warner,
Xiangwen Guo,
Amirhassan Shams-Ansari,
David Barton,
Neil Sinclair,
Marko Loncar
Abstract:
Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in particular enable essential electronic high-speed control for photonics while offering substantial photonic parallelism for electronics. Recent strides in thin-film…
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Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in particular enable essential electronic high-speed control for photonics while offering substantial photonic parallelism for electronics. Recent strides in thin-film lithium niobate photonics have ushered revolutionary advancements in electro-optics. This technology not only offers the requisite strong electro-optic coupling but also boasts ultra-low optical loss and high microwave bandwidth. Further, its tight confinement and compatibility with nanofabrication allow for unprecedented reconfigurability and scalability, facilitating the creation of novel and intricate devices and systems that were once deemed nearly impossible in bulk systems. Building upon this platform, the field has witnessed the emergence of various groundbreaking electro-optic devices surpassing the current state of the art, and introducing functionalities that were previously non-existent. This technological leap forward provides a unique framework to explore various realms of physics as well, including photonic non-Hermitian synthetic dimensions, active topological physics, and quantum electro-optics. In this review, we present the fundamental principles of electro-optics, drawing connections between fundamental science and the forefront of technology. We discuss the accomplishments and future prospects of integrated electro-optics, enabled by thin-film lithium niobate platform.
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Submitted 11 April, 2024; v1 submitted 9 April, 2024;
originally announced April 2024.
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Integrated resonant electro-optic comb enabled by platform-agnostic laser integration
Authors:
Isaac Luntadila Lufungula,
Amirhassan Shams-Ansari,
Dylan Renaud,
Camiel Op de Beeck,
Stijn Cuyvers,
Stijn Poelman,
Maximilien Billet,
Gunther Roelkens,
Marko Loncar,
Bart Kuyken
Abstract:
The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands f…
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The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands for ultra-low optical loss, wider bandgaps, and optical nonlinearities necessitate other platforms. Develo** integrated lasers on less mature platforms is arduous and costly due to limited throughput or unconventional process requirements. In response, we propose a novel platform-agnostic laser integration technique utilizing a singular design and process flow, applicable without modification to a diverse range of platforms. Leveraging a two-step micro-transfer printing method, we achieve nearly identical laser performance across platforms with refractive indices between 1.7 and 2.5. Experimental validation demonstrates strikingly similar laser characteristics between devices processed on lithium niobate and silicon nitride platforms. Furthermore, we showcase the integration of a laser with a resonant electro-optic comb generator on the thin-film lithium niobate platform, producing over 80 comb lines spanning 12 nm. This versatile technique transcends platform-specific limitations, facilitating applications like microwave photonics, handheld spectrometers, and cost-effective Lidar systems, across multiple platforms.
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Submitted 8 February, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Cavity-enhanced narrowband spectral filters using rare-earth ions doped in thin-film lithium niobate
Authors:
Yuqi Zhao,
Dylan Renaud,
Demitry Farfurnik,
Yuxi Jiang,
Subhojit Dutta,
Neil Sinclair,
Marko Loncar,
Edo Waks
Abstract:
On-chip optical filters are fundamental components in optical signal processing. While rare-earth ion-doped crystals offer ultra-narrow optical filtering via spectral hole burning, their applications have primarily been limited to those using bulk crystals, restricting their utility. In this work, we demonstrate cavity-enhanced spectral filtering based on rare-earth ions in an integrated nonlinear…
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On-chip optical filters are fundamental components in optical signal processing. While rare-earth ion-doped crystals offer ultra-narrow optical filtering via spectral hole burning, their applications have primarily been limited to those using bulk crystals, restricting their utility. In this work, we demonstrate cavity-enhanced spectral filtering based on rare-earth ions in an integrated nonlinear optical platform. We incorporate rare-earth ions into high quality-factor ring resonators patterned in thin-film lithium niobate. By spectral hole burning at 4K in a critically coupled resonance mode, we achieve bandpass filters ranging from 7 MHz linewidth, with 13.0 dB of extinction, to 24 MHz linewidth, with 20.4 dB of extinction. By reducing the temperature to 100 mK to eliminate phonon broadening, we achieve an even narrower linewidth of 681 kHz, which is comparable to the narrowest filter linewidth demonstrated in an integrated photonic device, while only requiring a small device footprint. Moreover, the cavity enables reconfigurable filtering by varying the cavity coupling rate. For instance, as opposed to the bandpass filter, we demonstrate a bandstop filter utilizing an under-coupled ring resonator. Such versatile integrated spectral filters with high extinction ratio and narrow linewidth could serve as fundamental components for optical signal processing and optical memories on-a-chip.
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Submitted 30 May, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Deterministic Creation of Strained Color Centers in Nanostructures via High-Stress Thin Films
Authors:
Daniel R. Assumpcao,
Chang **,
Madison Sutula,
Sophie W. Ding,
Phong Pham,
Can M. Knaut,
Mihir K. Bhaskar,
Abishrant Panday,
Aaron M. Day,
Dylan Renaud,
Mikhail D. Lukin,
Evelyn Hu,
Bartholomeus Machielse,
Marko Loncar
Abstract:
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence proper…
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Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon vacancy centers have been shown to operate at temperatures beyond 1K without phonon-mediated decoherence. In this work we combine high-stress silicon nitride thin films with diamond nanostructures in order to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of $\sim 4 \times 10^{-4}$. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.
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Submitted 4 November, 2023; v1 submitted 13 September, 2023;
originally announced September 2023.
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Cryogenic packaging of nanophotonic devices with a low coupling loss < 1 dB
Authors:
Beibei Zeng,
Chawina De-Eknamkul,
Daniel Assumpcao,
Dylan Renaud,
Zhuoxian Wang,
Daniel Riedel,
Jeonghoon Ha,
Carsten Robens,
David Levonian,
Mikhail Lukin,
Ralf Riedinger,
Mihir Bhaskar,
Denis Sukachev,
Marko Loncar,
Bart Machielse
Abstract:
Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with s…
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Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with sub-dB losses from optical fibers to nanophotonic circuits. Here we report a technique for reproducibly generating a permanently packaged interface between a tapered optical fiber and nanophotonic devices with a record-low coupling loss < 1 dB per facet at near-infrared wavelengths (~730 nm) that remains stable from 300 K to 30 mK. We further demonstrate the compatibility of this technique with etched lithium niobate on insulator waveguides. The technique lifts performance limitations imposed by scattering as light transfers between photonic devices and optical fibers, paving the way for scalable integration of photonic technologies at both room and cryogenic temperatures.
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Submitted 10 August, 2023; v1 submitted 16 June, 2023;
originally announced June 2023.
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Sub-1 Volt and High-Bandwidth Visible to Near-Infrared Electro-Optic Modulators
Authors:
Dylan Renaud,
Daniel Rimoli Assumpcao,
Graham Joe,
Amirhassan Shams-Ansari,
Di Zhu,
Yaowen Hu,
Neil Sinclair,
Marko Loncar
Abstract:
Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product ($V_π$L), optical loss, and EO bandwidth. However, applications in optical imaging, optogenet…
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Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product ($V_π$L), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. In this work, we realize VNIR amplitude and phase modulators featuring $V_π$L's of sub-1 V$\cdot\,$cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit a $V_π$L as low as 0.55 V$\cdot\,$cm at 738 nm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the new opportunities these high-performance modulators offer by demonstrating the first integrated EO frequency combs at VNIR wavelengths, with over 50 lines and tunable spacing, and the first frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method.
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Submitted 8 February, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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Microchannel cooling for the LHCb VELO Upgrade I
Authors:
Oscar Augusto De Aguiar Francisco,
Wiktor Byczynski,
Kazu Akiba,
Claudia Bertella,
Alexander Bitadze,
Matthew Brock,
Bartosz Bulat,
Guillaume Button,
Jan Buytaert,
Stefano De Capua,
Riccardo Callegari,
Christine Castellana,
Andrea Catinaccio,
Catherine Charrier,
Collette Charvet,
Victor Coco,
Paula Collins,
Jordan Degrange,
Raphael Dumps,
Diego Alvarez Feito,
Julian Freestone,
Mariusz Jedrychowski,
Vinicius Franco Lima,
Abraham Gallas,
Wouter Hulsbergen
, et al. (35 additional authors not shown)
Abstract:
The LHCb VELO Upgrade I, currently being installed for the 2022 start of LHC Run 3, uses silicon microchannel coolers with internally circulating bi-phase \cotwo for thermal control of hybrid pixel modules operating in vacuum. This is the largest scale application of this technology to date. Production of the microchannel coolers was completed in July 2019 and the assembly into cooling structures…
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The LHCb VELO Upgrade I, currently being installed for the 2022 start of LHC Run 3, uses silicon microchannel coolers with internally circulating bi-phase \cotwo for thermal control of hybrid pixel modules operating in vacuum. This is the largest scale application of this technology to date. Production of the microchannel coolers was completed in July 2019 and the assembly into cooling structures was completed in September 2021. This paper describes the R\&D path supporting the microchannel production and assembly and the motivation for the design choices. The microchannel coolers have excellent thermal peformance, low and uniform mass, no thermal expansion mismatch with the ASICs and are radiation hard. The fluidic and thermal performance is presented.
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Submitted 23 December, 2021;
originally announced December 2021.
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Electrically-pumped high-power laser transmitter integrated on thin-film lithium niobate
Authors:
Amirhassan Shams-Ansari,
Dylan Renaud,
Rebecca Cheng,
Linbo Shao,
Lingyan He,
Di Zhu,
Mengjie Yu,
Hannah R. Grant,
Leif Johansson,
Mian Zhang,
Marko Loncar
Abstract:
Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and lowpropagation loss. However, fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN…
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Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and lowpropagation loss. However, fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN chip. Here we achieve this goal, and demonstrate integrated high-power lasers on TFLN platform with up to 60 mW of optical power in the waveguides. We use this platform to realize a highpower transmitter consisting an electrically-pumped laser integrated with a 50 GHz modulator.
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Submitted 25 November, 2021; v1 submitted 16 November, 2021;
originally announced November 2021.
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Telecommunication-wavelength two-dimensional photonic crystal cavities in a thin single-crystal diamond membrane
Authors:
Kazuhiro Kuruma,
Afaq Habib Piracha,
Dylan Renaud,
Cleaven Chia,
Neil Sinclair,
Athavan Nadarajah,
Alastair Stacey,
Steven Prawer,
Marko Lončar
Abstract:
We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8\times10^6$ and a relatively smal…
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We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8\times10^6$ and a relatively small mode volume of ~2$(λ/n)^3$. The cavities are fabricated in the membrane using electron-beam lithography and vertical dry etching. We observe cavity resonances over a wide wavelength range spanning the telecommunication O- and S-bands (1360 nm-1470 nm) with Q factors of up to ~1800. Our method offers a new direction for on-chip diamond nanophotonic applications in the telecommunication-wavelength range.
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Submitted 26 October, 2021; v1 submitted 29 June, 2021;
originally announced June 2021.
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Coupling of a Single Tin-vacancy Center to a Photonic Crystal Cavity in Diamond
Authors:
Kazuhiro Kuruma,
Benjamin **ault,
Cleaven Chia,
Dylan Renaud,
Patrick Hoffmann,
Satoshi Iwamoto,
Carsten Ronning,
Marko Lončar
Abstract:
We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11,000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas deso…
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We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11,000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the beta factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.
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Submitted 11 June, 2021; v1 submitted 4 May, 2021;
originally announced May 2021.
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Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer
Authors:
Ryan J. Gelly,
Dylan Renaud,
Xing Liao,
Benjamin **ault,
Stefan Bogdanovic,
Giovanni Scuri,
Kenji Watanabe,
Takashi Taniguchi,
Bernhard Urbaszek,
Hongkun Park,
Marko Lončar
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscap…
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Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.
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Submitted 1 March, 2021;
originally announced March 2021.
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Optimal X-ray filters for EDXRF analysis
Authors:
Daniel Maier,
Olivier Limousin,
Diana Renaud,
Francois Visticot
Abstract:
This work presents a semi-analytical approach to answer the question of optimal beam filtering in the case of EDXRF measurements with an X-ray tube. A collection of programs, called xfilter, is presented that is capable to find the optimal filter material, the optimal filter thickness, and the optimal scattering angle, for all possible combinations of trace elements, target materials, and tube vol…
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This work presents a semi-analytical approach to answer the question of optimal beam filtering in the case of EDXRF measurements with an X-ray tube. A collection of programs, called xfilter, is presented that is capable to find the optimal filter material, the optimal filter thickness, and the optimal scattering angle, for all possible combinations of trace elements, target materials, and tube voltages. The concepts of the calculations are introduced in a general manner and demonstrated with a specific example, the detection of gold K_alpha1 XRF within human tissue. Comparing the calculation results and an EDXRF measurement shows excellent agreement.
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Submitted 13 January, 2020; v1 submitted 31 July, 2019;
originally announced July 2019.