Epitaxial electrical contact to graphene on SiC
Authors:
T. Le Quang,
L. Huder,
F. Lipp Bregolin,
A. Artaud,
H. Okuno,
S. Pouget,
N. Mollard,
G. Lapertot,
A. G. M Jansen,
F. Lefloch,
E. F. C Driessen,
C. Chapelier,
V. T. Renard
Abstract:
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a…
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Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.
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Submitted 11 July, 2017; v1 submitted 17 May, 2017;
originally announced May 2017.
