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Temporal Interaction and its Role in the Evolution of Cooperation
Authors:
Yujie He,
Tianyu Ren,
Xiao-Jun Zeng,
Huawen Liang,
Liukai Yu,
Junjun Zheng
Abstract:
This research investigates the impact of dynamic interactions with time-varying topologies on the evolution of cooperative behaviours in social dilemmas. Traditional research has focused on deterministic rules governing pairwise interactions, yet the impact of interaction frequency and synchronicity on cooperation remains underexplored. Addressing this gap, our work introduces two temporal interac…
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This research investigates the impact of dynamic interactions with time-varying topologies on the evolution of cooperative behaviours in social dilemmas. Traditional research has focused on deterministic rules governing pairwise interactions, yet the impact of interaction frequency and synchronicity on cooperation remains underexplored. Addressing this gap, our work introduces two temporal interaction mechanisms to model the stochastic or periodic participation of individuals in these games, acknowledging real-life variances due to exogenous temporal factors and geographical time differences. We consider that the interaction state significantly influences both game payoff calculations and the strategy updating process, offering new insights into the emergence and sustainability of cooperation. Our results indicate that maximum game participation frequency is suboptimal under a stochastic interaction mechanism. Instead, an intermediate region of activation probability yields the highest cooperation level, especially under strong dilemma conditions. This suggests that a balance between inactivity security and interaction frequency is crucial. Furthermore, local synchronization of interactions within specific areas is shown to be beneficial, as time differences hinder the spread of cross-structures but promote the formation of dense cooperative clusters with smoother boundaries. Our findings provide an intuitive understanding of node-based temporality and probabilistic interactions, contributing to the broader discourse on resolving social dilemmas.
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Submitted 5 February, 2024; v1 submitted 22 January, 2024;
originally announced January 2024.
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Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors
Authors:
Zhao-Yi Yan,
Zhan Hou,
Kan-Hao Xue,
Tian Lu,
Ruiting Zhao,
Junying Xue,
Fan Wu,
Minghao Shao,
Jianlan Yan,
Anzhi Yan,
Zhenze Wang,
Penghui Shen,
Mingyue Zhao,
Xiangshui Miao,
Zhaoyang Lin,
Houfang Liu,
He Tian,
Yi Yang,
Tian-Ling Ren
Abstract:
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts…
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Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits.
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Submitted 20 March, 2023;
originally announced March 2023.
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Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
Authors:
M. H. Shao,
H. F. Liu,
R. He,
X. M. Li,
L. Wu,
J. Ma,
X. C. Hu,
R. T. Zhao,
Z. C. Zhong,
Y. Yu,
C. H. Wan,
Y. Yang,
C. -W. Nan,
X. D. Bai,
T. -L. Ren,
X. Renshaw Wang
Abstract:
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polariz…
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Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polarization remains to be elucidated. Here we report reversibly electrochemical control of ferroelectricity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) heterostructures with a mixed ionic-electronic LaSrMnO$_3$ electrode, achieving a hard breakdown field more than 18 MV/cm, over fourfold as high as that of typical HZO. The electrical extraction and insertion of oxygen into HZO is macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multiple polarization states and even repeatedly repaired the damaged ferroelectricity by reversed negative electric fields. Our study demonstrates the robust and switchable ferroelectricity in hafnia oxide distinctly associated with oxygen vacancy and opens up opportunities to recover, manipulate, and utilize rich ferroelectric functionalities for advanced ferroelectric functionality to empower the existing Si-based electronics such as multi-bit storage.
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Submitted 20 June, 2021;
originally announced June 2021.
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Identifying vital nodes based on reverse greedy method
Authors:
Tao Ren,
Zhe Li,
Yi Qi,
Yixin Zhang,
Simiao Liu,
Yanjie Xu,
Tao Zhou
Abstract:
The identification of vital nodes that maintain the network connectivity is a long-standing challenge in network science. In this paper, we propose a so-called reverse greedy method where the least important nodes are preferentially chosen to make the size of the largest component in the corresponding induced subgraph as small as possible. Accordingly, the nodes being chosen later are more importa…
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The identification of vital nodes that maintain the network connectivity is a long-standing challenge in network science. In this paper, we propose a so-called reverse greedy method where the least important nodes are preferentially chosen to make the size of the largest component in the corresponding induced subgraph as small as possible. Accordingly, the nodes being chosen later are more important in maintaining the connectivity. Empirical analyses on ten real networks show that the reverse greedy method performs remarkably better than well-known state-of-the-art methods.
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Submitted 2 July, 2019;
originally announced July 2019.
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An integrated low-voltage broadband lithium niobate phase modulator
Authors:
Tianhao Ren,
Mian Zhang,
Cheng Wang,
Linbo Shao,
Christian Reimer,
Yong Zhang,
Oliver King,
Ronald Esman,
Thomas Cullen,
Marko Loncar
Abstract:
Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (~ 1 dB) and low h…
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Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (~ 1 dB) and low half-wave voltage over a large spectral range (3.5 - 4.5 V at 5 - 40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an optical frequency comb consisting of over 40 sidebands spanning 10 nm in the telecom L-band. The high electro-optic performance combined with the high RF power-handling ability (3.1 W) of our integrated phase modulator are crucial for future photonics and microwave systems.
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Submitted 24 February, 2019;
originally announced February 2019.
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Electronically Programmable Photonic Molecule
Authors:
Mian Zhang,
Cheng Wang,
Yaowen Hu,
Amirhassan Shams-Ansari,
Tianhao Ren,
Shanhui Fan,
Marko Loncar
Abstract:
Physical systems with discrete energy levels are ubiquitous in nature and are fundamental building blocks of quantum technology. Realizing controllable artifcial atom- and molecule-like systems for light would allow for coherent and dynamic control of the frequency, amplitude and phase of photons. In this work, we demonstrate a photonic molecule with two distinct energy-levels and control it by ex…
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Physical systems with discrete energy levels are ubiquitous in nature and are fundamental building blocks of quantum technology. Realizing controllable artifcial atom- and molecule-like systems for light would allow for coherent and dynamic control of the frequency, amplitude and phase of photons. In this work, we demonstrate a photonic molecule with two distinct energy-levels and control it by external microwave excitation. We show signature two-level dynamics including microwave induced photonic Autler-Townes splitting, Stark shift, Rabi oscillation and Ramsey interference. Leveraging the coherent control of optical energy, we show on-demand photon storage and retrieval in optical microresonators by reconfguring the photonic molecule into a bright-dark mode pair. These results of dynamic control of light in a programmable and scalable electro-optic platform open doors to applications in microwave photonic signal processing, quantum photonics in the frequency domain, optical computing concepts and simulations of complex physical systems.
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Submitted 23 September, 2018;
originally announced September 2018.
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Energy Loss Due to Defect Formation from $^{206}$Pb Recoils in SuperCDMS Germanium Detectors
Authors:
Robert Agnese,
Taylor Aralis,
Tsuguo Aramaki,
Isaac Arnquist,
Elham Azadbakht,
William Baker,
Samir Banik,
D'Ann Barker,
Dan Bauer,
Thomas Binder,
Michael Bowles,
Paul Brink,
Ray Bunker,
Blas Cabrera,
Robert Calkins,
Concetta Cartaro,
David Cerdeno,
Yen-Yung Chang,
Jodi Cooley,
Brett Cornell,
Priscilla Cushman,
Philippe Di Stefano,
Todd Doughty,
Eleanor Fascione,
Tali Figueroa
, et al. (72 additional authors not shown)
Abstract:
The Super Cryogenic Dark Matter Search experiment (SuperCDMS) at the Soudan Underground Laboratory studied energy loss associated with Frenkel defect formation in germanium crystals at mK temperatures using in situ $^{210}$Pb sources. We examine the spectrum of $^{206}$Pb nuclear recoils near its expected 103 keV endpoint energy and determine an energy loss of $\left(6.08\pm0.18\right)$ %, which w…
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The Super Cryogenic Dark Matter Search experiment (SuperCDMS) at the Soudan Underground Laboratory studied energy loss associated with Frenkel defect formation in germanium crystals at mK temperatures using in situ $^{210}$Pb sources. We examine the spectrum of $^{206}$Pb nuclear recoils near its expected 103 keV endpoint energy and determine an energy loss of $\left(6.08\pm0.18\right)$ %, which we attribute to defect formation. From this result and using TRIM simulations, we extract the first experimentally determined average displacement threshold energy of $\left(19.7^{+0.6}_{-0.5}\right)$ eV for germanium. This has implications for the analysis thresholds of future germanium-based dark matter searches.
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Submitted 16 April, 2019; v1 submitted 24 May, 2018;
originally announced May 2018.