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One Trillion True Random Bits Generated with a Field Programmable Gate Array Actuated Magnetic Tunnel Junction
Authors:
Andre Dubovskiy,
Troy Criss,
Ahmed Sidi El Valli,
Laura Rehm,
Andrew D. Kent,
Andrew Haas
Abstract:
Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses. However, our implementation used high-end and expensive electronics, such as a high bandwidth arbitrary waveform generator and analog-to-digital converter, and was…
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Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses. However, our implementation used high-end and expensive electronics, such as a high bandwidth arbitrary waveform generator and analog-to-digital converter, and was limited to relatively low data rates. Here, we significantly increase the speed of true random number generation (TRNG) of our stochastic actuated pMTJs (SMART-pMTJs) using Field Programmable Gate Arrays (FPGAs), demonstrating the generation of over $10^{12}$ bits at rates exceeding 10Mb/s. The resulting bitstreams pass the NIST Statistical Test Suite for randomness with only one XOR operation. In addition to a hundred-fold reduction in the setup cost and a thousand-fold increase in bitrate, the advancement includes simplifying and optimizing random bit generation with a custom-designed analog daughter board to interface an FPGA and SMART-pMTJ. The resulting setup further enables FPGA at-speed processing of MTJ data for stochastic modeling and cryptography.
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Submitted 22 April, 2024;
originally announced April 2024.
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Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Authors:
Md Golam Morshed,
Laura Rehm,
Ankit Shukla,
Yunkun Xie,
Samiran Ganguly,
Shaloo Rakheja,
Andrew D. Kent,
Avik W. Ghosh
Abstract:
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) based on low-barrier magnets (LBMs) are natural sources of TRNGs, they tend to suffer from device-to-device variability, low speed, and temperature sensi…
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True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) based on low-barrier magnets (LBMs) are natural sources of TRNGs, they tend to suffer from device-to-device variability, low speed, and temperature sensitivity. Instead, medium-barrier magnets (MBMs) operated with nanosecond pulses - denoted, stochastic magnetic actuated random transducer (SMART) devices - are potentially superior candidates for such applications. We present a systematic analysis of spin-torque-driven switching of MBM-based pMTJs (Eb ~ 20 - 40 kBT) as a function of pulse duration (1 ps to 1 ms), by numerically solving their macrospin dynamics using a 1-D Fokker-Planck equation. We investigate the impact of voltage, temperature, and process variations (MTJ dimensions and material parameters) on the switching probability of the device. Our findings indicate SMART devices activated by short-duration pulses (< 1 ns) are much less sensitive to process-voltage-temperature (PVT) variations while consuming lower energy (~ fJ) than the same devices operated with longer pulses. Our results show a path toward building fast, energy-efficient, and robust TRNG hardware units for solving optimization problems.
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Submitted 28 October, 2023;
originally announced October 2023.
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A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
Authors:
Ankit Shukla,
Laura Heller,
Md Golam Morshed,
Laura Rehm,
Avik W. Ghosh,
Andrew D. Kent,
Shaloo Rakheja
Abstract:
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with $\lesssim$ 200~Mb/s throughput and pJ/bit energy consumption. A high temper…
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Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with $\lesssim$ 200~Mb/s throughput and pJ/bit energy consumption. A high temperature sensitivity, however, adversely affects their performance as a TRNG. Superparamagnetic MTJs employing low-barrier magnets (LBMs) have also been used for TRNG operation. Although LBM-based MTJs can operate at low energy, they suffer from slow dynamics, sensitivity to process variations, and low fabrication yield. In this paper, we model a TRNG based on medium-barrier magnets (MBMs) with perpendicular magnetic anisotropy. The proposed MBM-based TRNG is driven with short voltage pulses to induce ballistic, yet stochastic, magnetization switching. We show that the proposed TRNG can operate at frequencies of about 500~MHz while consuming less than 100~fJ/bit of energy. In the short-pulse ballistic limit, the switching probability of our device shows robustness to variations in temperature and material parameters relative to LBMs and HBMs. Our results suggest that MBM-based MTJs are suitable candidates for building fast and energy-efficient TRNG hardware units for probabilistic computing.
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Submitted 18 April, 2023;
originally announced April 2023.
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Stochastic magnetic actuated random transducer devices based on perpendicular magnetic tunnel junctions
Authors:
Laura Rehm,
Corrado Carlo Maria Capriata,
Misra Shashank,
J. Darby Smith,
Mustafa Pinarbasi,
B. Gunnar Malm,
Andrew D. Kent
Abstract:
True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs) activated by short duration (ns) pulses in the ballistic limit for such applications. In this limit, a pulse can transform the Boltzmann distribution of initial free…
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True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs) activated by short duration (ns) pulses in the ballistic limit for such applications. In this limit, a pulse can transform the Boltzmann distribution of initial free layer magnetization states into randomly magnetized down or up states, i.e. a bit that is 0 or 1, easily determined by measurement of the junction's tunnel resistance. It is demonstrated that bitstreams with millions of events: 1) are very well described by the binomial distribution; 2) can be used to create a uniform distribution of 8-bit random numbers; 3) pass multiple statistical tests for true randomness, including all the National Institute of Standards tests for random number generators with only one XOR operation; and 4) can have no drift in the bit probability with time. The results presented here show that pMTJs operated in the ballistic regime can generate true random numbers at GHz bitrates, while being more robust to environmental changes, such as their operating temperature, compared to other stochastic nanomagnetic devices.
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Submitted 15 September, 2022; v1 submitted 3 September, 2022;
originally announced September 2022.
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Thermal effects in spin torque switching of perpendicular magnetic tunnel junctions at cryogenic temperatures
Authors:
Laura Rehm,
Georg Wolf,
Bartek Kardasz,
Egecan Cogulu,
Yizhang Chen,
Mustafa Pinarbasi,
Andrew D. Kent
Abstract:
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperature dependence of the spin torque switching probability of state-of-the-art perpendicular magnetic tunnel junction nanopillars (40 to 60 nm in diameter)…
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Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperature dependence of the spin torque switching probability of state-of-the-art perpendicular magnetic tunnel junction nanopillars (40 to 60 nm in diameter) from room temperature down to 4 K, sampling up to a million switching events. The junction temperature at the switching voltage---obtained from the thermally assisted spin torque switching model---saturates at temperatures below about 75 K, showing that junction heating is significant below this temperature and that spin torque switching remains highly stochastic down to 4 K. A model of heat flow in a nanopillar junction shows this effect is associated with the reduced thermal conductivity and heat capacity of the metals in the junction.
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Submitted 3 September, 2020;
originally announced September 2020.
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Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures
Authors:
Laura Rehm,
Georg Wolf,
Bartek Kardasz,
Mustafa Pinarbasi,
Andrew D. Kent
Abstract:
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration spin-transfer switching characteristics of perpendicular magnetic tunnel junction (pMTJ) nanopillar devices (40 to 60 nm in diameter) and contrast them to their ro…
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Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration spin-transfer switching characteristics of perpendicular magnetic tunnel junction (pMTJ) nanopillar devices (40 to 60 nm in diameter) and contrast them to their room temperature properties. Interestingly, at fixed pulse voltage overdrive the characteristic switching time decreases with temperature, in contrast to macrospin model predictions, with the largest reduction in switching time occurring between room temperature and 150 K. The switching energy increases with decreasing temperature, but still compares very favorably to other types of spin-transfer devices at 4 K, with < 300 fJ required per switch. Write error rate (WER) measurements show highly reliable (WER <= 5x10^-5 with 4 ns pulses at 4 K) demonstrating the promise of pMTJ devices for cryogenic applications and routes to further device optimization.
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Submitted 1 October, 2019;
originally announced October 2019.
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Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer
Authors:
Laura Rehm,
Volker Sluka,
Graham E. Rowlands,
Minh-Hai Nguyen,
Thomas A. Ohki,
Andrew D. Kent
Abstract:
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute perma…
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We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and increased Gilbert dam** for the dilute permalloy free layer relative to the permalloy devices. Our study demonstrates that reducing the magnetization of the free layer increases the switching speed while greatly reducing the switching energy and shows a promising route toward even lower power magnetic memory devices compatible with superconducting electronics.
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Submitted 30 May, 2019;
originally announced May 2019.
