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Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Heterostructures
Authors:
Da Lin,
Jason Lynch,
Sudong Wang,
Zekun Hu,
Rajeev Kumar Rai,
Huairuo Zhang,
Chen Chen,
Shalini Kumari,
Eric Stach,
Albert V. Davydov,
Joan M. Redwing,
Deep Jariwala
Abstract:
Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experime…
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Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition metal dichalcogenides (TMDCs). We experimentally demonstrate an average total absorption in the visible range (450 nm - 700 nm) of > 70% using > 4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency (PCE) of 15.54% and a specific power > 300 W g^-1 may be achieved in a photovoltaic cell based on this metamaterial absorber.
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Submitted 6 July, 2024;
originally announced July 2024.
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High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Authors:
Seunguk Song,
Kwan-Ho Kim,
Rachael Keneipp,
Nicholas Trainor,
Chen Chen,
Jeffrey Zheng,
Joan M. Redwing,
Marija Drndić,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistan…
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Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistance between the metal electrodes and the channel. Here, we report a significant enhancement in performance of contact-engineered FeFETs with a 2D MoS2 channel and a ferroelectric Al0.68Sc0.32N (AlScN) gate dielectric. Replacing Ti with In contact electrodes results in a fivefold increase in on-state current (~120 uA/um at 1 V) and on-to-off ratio (~2*10^7) in the FeFETs. In addition, the high carrier concentration in the MoS2 channel during the on-state (> 10^14 cm^-2) facilitates the observation of a metal-to-insulator phase transition in monolayer MoS2 permitting observation of high field effect mobility (> 100 cm^2V^-1s^-1) at cryogenic temperatures. Our work and devices broaden the potential of FeFETs and provides a unique platform to implement high-carrier-density transport in a 2D channel.
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Submitted 4 June, 2024;
originally announced June 2024.
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Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
Authors:
Simrjit Singh,
Kwan-Ho Kim,
Kiyoung Jo,
Pariasadat Musavigharavi,
Bumho Kim,
Jeffrey Zheng,
Nicholas Trainor,
Chen Chen,
Joan M. Redwing,
Eric A Stach,
Roy H Olsson III,
Deep Jariwala
Abstract:
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-eff…
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Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices.
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Submitted 14 November, 2023;
originally announced November 2023.
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Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures
Authors:
Gwangwoo Kim,
Benjamin Huet,
Christopher E. Stevens,
Kiyoung Jo,
Jeng-Yuan Tsai,
Saiphaneendra Bachu,
Meghan Leger,
Kyung Yeol Ma,
Nicholas R. Glavin,
Hyeon Suk Shin,
Nasim Alem,
Qimin Yan,
Joshua R. Hedrickson,
Joan M. Redwing,
Deep Jariwala
Abstract:
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engine…
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Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
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Submitted 12 July, 2023;
originally announced July 2023.
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Light-driven C-H bond activation mediated by 2D transition metal dichalcogenides
Authors:
**gang Li,
Di Zhang,
Zhongyuan Guo,
Xi Jiang,
Jonathan M. Larson,
Haoyue Zhu,
Tianyi Zhang,
Yuqian Gu,
Brian Blankenship,
Min Chen,
Zilong Wu,
Suichu Huang,
Robert Kostecki,
Andrew M. Minor,
Costas P. Grigoropoulos,
Deji Akinwande,
Mauricio Terrones,
Joan M. Redwing,
Hao Li,
Yuebing Zheng
Abstract:
C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H activation in complex organic materials mediated by 2D transition metal dichalcogenides (TMDCs) and the resultant solid-state synthesis of luminescent carbon dots…
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C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H activation in complex organic materials mediated by 2D transition metal dichalcogenides (TMDCs) and the resultant solid-state synthesis of luminescent carbon dots in a spatially-resolved fashion. We unravel the efficient H adsorption and a lowered energy barrier of C-C coupling mediated by 2D TMDCs to promote C-H activation. Our results shed light on 2D materials for C-H activation in organic compounds for applications in organic chemistry, environmental remediation, and photonic materials.
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Submitted 15 November, 2023; v1 submitted 16 August, 2022;
originally announced August 2022.
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arXiv:2204.00397
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.other
physics.app-ph
physics.optics
High Density, Localized Quantum Emitters in Strained 2D Semiconductors
Authors:
Gwangwoo Kim,
Hyong Min Kim,
Pawan Kumar,
Mahfujur Rahaman,
Christopher E. Stevens,
Jonghyuk Jeon,
Kiyoung Jo,
Kwan-Ho Kim,
Nicholas Trainor,
Haoyue Zhu,
Byeong-Hyeok Sohn,
Eric A. Stach,
Joshua R. Hendrickson,
Nicholas R Glavin,
Joonki Suh,
Joan M. Redwing,
Deep Jariwala
Abstract:
Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained…
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Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources.
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Submitted 1 April, 2022;
originally announced April 2022.
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Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Authors:
Kwan-Ho Kim,
Seyong Oh,
Merrilyn Mercy Adzo Fiagbenu,
Jeffrey Zheng,
Pariasadat Musavigharavi,
Pawan Kumar,
Nicholas Trainor,
Areej Aljarb,
Yi Wan,
Hyong Min Kim,
Keshava Katti,
Zichen Tang,
Vincent C. Tung,
Joan Redwing,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field…
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Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
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Submitted 6 January, 2022;
originally announced January 2022.
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Light-Matter Coupling in Scalable Van der Waals Superlattices
Authors:
Pawan Kumar,
Jason Lynch,
Baokun Song,
Haonan Ling,
Francisco Barrera,
Huiqin Zhang,
Surendra B. Anantharaman,
Jagrit Digani,
Haoyue Zhu,
Tanushree H. Choudhury,
Clifford McAleese,
Xiaochen Wang,
Ben R. Conran,
Oliver Whear,
Michael J. Motala,
Michael Snure,
Christopher Muratore,
Joan M. Redwing,
Nicholas R. Glavin,
Eric A. Stach,
Artur R. Davoyan,
Deep Jariwala
Abstract:
Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks…
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Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.
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Submitted 25 March, 2021;
originally announced March 2021.