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Optically Pumped Terahertz Amplitude Modulation in Type-II Ge QD/Si heterostructures grown via Molecular Beam Epitaxy
Authors:
Suprovat Ghosh,
Abir Mukherjee,
Sudarshan Singh,
Samit K Ray,
Ananjan Basu,
Santanu Manna,
Samaresh Das
Abstract:
This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in the Terahertz (THz) regime. In this work, Ge QDs, pumped by an above bandgap near infrared wavelength, exhibit THz amplitude modulation in the frequency range of 0.1-1.0 THz. The epitaxial Ge QDs outperform reference SOI s…
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This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in the Terahertz (THz) regime. In this work, Ge QDs, pumped by an above bandgap near infrared wavelength, exhibit THz amplitude modulation in the frequency range of 0.1-1.0 THz. The epitaxial Ge QDs outperform reference SOI substrate in THz amplitude modulation owing to higher carrier generation in weakly confined dots compared to its bulk counterpart. This is further corroborated using theoretical model based on the non-equilibrium Green's function (NEGF) method. This model enables the calculation of photo carriers generated (PCG) and their confinement in the Ge QD region. Our model also reroutes the calculation from PCG to corresponding plasma frequency and hence to refractive index and THz photo-conductivity. Moreover, the photo-generated confined holes accumulation at the Ge QDs-Si interface is elevated after optical illumination, leading to a decreased THz photo-conductivity. This augmentation in THz photo-conductivity contributes to a significant enhancement of THz modulation depth ~77% at Ge QDs-Si interfaces compared to bare SOI at 0.1 THz.
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Submitted 3 July, 2024;
originally announced July 2024.
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Charge transfer mediated giant photo-amplification in air-stable $α$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts
Authors:
Shreyasi Das,
Arup Ghorai,
Sourabh Pal,
Somnath Mahato,
Soumen Das,
Samit K. Ray
Abstract:
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI…
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Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $α$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $α$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 Å) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for develo** mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.
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Submitted 30 December, 2022;
originally announced January 2023.
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High performance Broadband Photodetection Based on Graphene -- MoS$_{2x}$Se$_{2(1-x)}$ Alloy Engineered Phototransistors
Authors:
Shubhrasish Mukherjee,
Didhiti Bhattacharya,
Samit Kumar Ray,
Atindra Nath Pal
Abstract:
The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC materials through chemical route has opened realistic possibilities to fabricate hybrid multi-functional devices. By synthesizing nanosheets with different com…
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The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC materials through chemical route has opened realistic possibilities to fabricate hybrid multi-functional devices. By synthesizing nanosheets with different composites of MoS$_{2x}$Se$_{2(1-x)}$ (x = 0 to 1) using simple chemical methods, we systematically investigate the photo response properties of three terminal hybrid devices by decorating large area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, graphene-MoSSe hybrid phototransistor exhibits superior optoelectronic properties than its binary counterparts. The device exhibits extremely high photoresponsivity (>10$^4$ A/W), low noise equivalent power (~10$^{-14}$ W/Hz$^{0.5}$), higher specific detectivity (~ 10$^{11}$ Jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broadband light absorption of MoSSe, ultrafast charge transport in graphene, along with controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large area scalability with wafer-scale production of MoS$_{2x}$Se$_{2(1-x)}$ alloys, having important implication towards facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van-der-Waals materials.
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Submitted 30 June, 2022;
originally announced June 2022.
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Momentum domain polarization probing of forward and inverse spin Hall effect of leaky modes in plasmonic crystals
Authors:
Jeeban Kumar Nayak,
Harley Suchiang,
Subir Kumar Ray,
Ayan Banerjee,
Subhasish Dutta Gupta,
Nirmalya Ghosh
Abstract:
Simultaneous manifestation of both forward and inverse photonic Spin Hall effect in geometrically tailored anisotropic waveguided plasmonic crystal system is observed through the excitation of the leaky hybridized quasiguided modes. The quasiguided modes of the plasmonic crystal manifested in the far-field momentum (Fourier) domain as circular ring-like intensity distributions, and the different s…
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Simultaneous manifestation of both forward and inverse photonic Spin Hall effect in geometrically tailored anisotropic waveguided plasmonic crystal system is observed through the excitation of the leaky hybridized quasiguided modes. The quasiguided modes of the plasmonic crystal manifested in the far-field momentum (Fourier) domain as circular ring-like intensity distributions, and the different spin orbit interaction (SOI) effects revealed their exclusive signature as polarization-dependent azimuthal intensity lobes on top of it. Using a darkfield Fourier domain polarization Mueller matrix platform, we have observed input spin (circular polarization)- dependent trajectory of the leaky quasiguided modes in the momentum domain (forward spin Hall effect) and its reciprocal effect as the wave vector-controlled spin selection of quasiguided modes (inverse spin Hall effect). These effects are separately manifested in characteristic Mueller matrix elements enabling their interpretation as geometrical circular anisotropy effects. Resonance-enabled enhancement and control of these effects are also demonstrated by exploiting the spectral Fano-type resonance. The far-field manifestation of spin-directional excitation of leaky quasiguided modes, their unique interpretation through momentum domain Mueller matrix, regulation and control of the SOI effects in plasmonic-photonic crystal systems, opens up exciting avenues in spin-orbit photonic research.
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Submitted 18 April, 2022; v1 submitted 7 April, 2022;
originally announced April 2022.
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Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Authors:
Sudarshan Singh,
Subhrajit Mukherjee,
Samik Mukherjee,
Simone Assali,
Lu Luo,
Samaresh Das,
Oussama Moutanabbir,
Samit K Ray
Abstract:
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour deposition-grown high Sn-content Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell based single nanowire photodetector operating at the optical communication wavelength of 1.55 $μ$m. The…
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Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour deposition-grown high Sn-content Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell based single nanowire photodetector operating at the optical communication wavelength of 1.55 $μ$m. The atomic concentration of Sn in nanowires has been studied using X-ray photoelectron and Raman spectroscopy data. A metal-semiconductor-metal based single nanowire photodetector, fabricated via electron beam lithography process, exhibits significant room-temperature photoresponse even at zero bias. In addition to the high-crystalline quality and identical shell composition of the nanowire, the efficient collection of photogenerated carriers under an external electric field result in the superior responsivity and photoconductive gain as high as ~70.8 A/W and ~57, respectively at an applied bias of -1.0 V. The extra-ordinary performance of the fabricated photodetector demonstrates the potential of GeSn nanowires for future Si CMOS compatible on-chip optical communication device applications.
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Submitted 4 February, 2022;
originally announced February 2022.
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High Responsivity Gate Tunable UV-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed Dimensional (2D-0D) Heterostructure
Authors:
Shubhrasish Mukherjee,
Didhiti Bhattacharya,
Sumanti Patra,
Sanjukta Paul,
Rajib Kumar Mitra,
Priya Mahadevan,
Atindra Nath Pal,
Samit Kumar Ray
Abstract:
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution based processing, we demonstrate a super large (~ 0.75 mm^2), UV-Vis broadband (365-633 nm), phototransi…
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Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution based processing, we demonstrate a super large (~ 0.75 mm^2), UV-Vis broadband (365-633 nm), phototransistor made of WS_2 QDs decorated CVD graphene as active channel with extraordinary stability and durability in ambient condition (without any degradation of photocurrent till 4 months after fabrication). Here, colloidal 0D WS_2-QDs are used as the photo absorbing material and graphene acts as the conducting channel. A high photoresponsivity (3.1 x 10^2 A/W), higher detectivity (2.2 x 10^12 Jones) and low noise equivalent power (4 x 10^{-14} W/Hz^0.5) are obtained at a low bias voltage (V_{ds} = 1V) at an illumination of 365 nm with an optical power as low as 0.8 μW/cm^2, which can further be tuned by modulating the gate bias. While comparing the photocurrent between two different morphologies of WS_2 (QDs and 2D nanosheets), a significant enhancement of photocurrent is observed in case of QDs based device. Ab initio density functional theory based calculations further support our observation, revealing the role of quantum confinement for the enhanced photo response. Our work reveals a strategy towards making a scalable, cost-effective, highly performing hybrid two-dimensional (2D/0D) photo detector with graphene-WS_2 QDs, paving the way towards the next generation optoelectronic applications.
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Submitted 9 November, 2021;
originally announced November 2021.
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One-pot Liquid-Phase Synthesis of MoS$_2$-WS$_2$ van der Waals Heterostructures for Broadband Photodetection
Authors:
Shaona Bose,
Subhrajit Mukherjee,
Subhajit Jana,
Sanjeev Kumar Srivastava,
Samit Kumar Ray
Abstract:
Two dimensional (2D) van der Waals heterostructures (vdWHs) have their unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics at a reduced cost. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices. In the present work, we have demonstrated a rapid…
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Two dimensional (2D) van der Waals heterostructures (vdWHs) have their unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics at a reduced cost. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices. In the present work, we have demonstrated a rapid yet simple, impurity free and highly efficient sonication-assisted chemical exfoliation approach to synthesize hybrid vdWHs based on 2D molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$), with high yield. Microscopic and spectroscopic studies have confirmed the successful exfoliation of layered 2D materials and formation of their hybrid heterostructure. The co-existence of 2D MoS2 and WS2 in the vdW hybrid is established by optical absorption and Raman shift measurements along with their chemical stiochiometry determined by X-ray photoelectron spectroscopy. The spectral response of the vdWH/Si (2D/3D) heterojunction photodetector fabricated using the as-synthesized material is found to show superior broadband photoresponse compared to that shown by the individual 2D MoS$_2$ and WS$_2$ based devices. The peak responsivity is found to be ~2.15 A/W at a wavelength of ~560 nm for an applied bias of -5 V. The ease of fabrication and superior performance of the chemically synthesized vdWH-based devices have revealed their potential use for large area optoelectronic applications on Si compatible CMOS platforms.
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Submitted 27 July, 2021;
originally announced August 2021.
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Real-time observation of spin-resolved plexcitons between metal plasmons and excitons of WS$_2$
Authors:
Rup Kumar Chowdhury,
Prasanta Kumar Datta,
Shivakiran Bhaktha BN,
Samit Kumar Ray
Abstract:
Strong light-matter interactions between resonantly coupled metal plasmons and spin decoupled bright excitons from two dimensional (2D) transition metal dichalcogenides (TMDs) can produce discrete spin-resolved exciton-plasmon polariton (plexciton). A few efforts have been made to perceive the spin induced exciton-polaritons in nanocavities at cryogenic conditions, however, successful realization…
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Strong light-matter interactions between resonantly coupled metal plasmons and spin decoupled bright excitons from two dimensional (2D) transition metal dichalcogenides (TMDs) can produce discrete spin-resolved exciton-plasmon polariton (plexciton). A few efforts have been made to perceive the spin induced exciton-polaritons in nanocavities at cryogenic conditions, however, successful realization of spin-resolved plexciton in time-domain is still lacking. Here, we are able to identify both the spin-resolved plexcitons discretely at room temperature and investigate their ultrafast temporal dynamics in size-tunable $Au-WS_{2}$ hybrid nanostructures using femtosecond pump-probe spectroscopy technique. Furthermore, we attribute that zero detuning between the excitons and plasmons is achieved at $\sim$7.0 ps along with transient Rabi-splitting energy exceeding $\sim$250 meV for both the spin-plexcitons, validating the strong-coupling conditions of polariton formation. Realization of these novel spin-plexcitons in the metal-TMDs platform is, therefore, interesting for both fundamental understanding and their possible futuristic applications in quantum photonics operating at room temperature.
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Submitted 11 September, 2019;
originally announced September 2019.
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Controlling Fano resonance using the Geometrical Phase of light in spatially tailored waveguided plasmonic crystals
Authors:
Subir K. Ray,
Ankit K. Singh,
Ajmal,
Shubham Chandel,
Partha Mitra,
Nirmalya Ghosh
Abstract:
Fano resonance exhibiting an asymmetric spectral line shape is a universal phenomenon observed in diverse physical systems. Here we experimentally establish a direct link between the spectral asymmetry parameter and a physically realizable phase factor of interference between a continuum and a discrete mode that leads to Fano resonance. Using a specially designed metamaterial, namely waveguided pl…
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Fano resonance exhibiting an asymmetric spectral line shape is a universal phenomenon observed in diverse physical systems. Here we experimentally establish a direct link between the spectral asymmetry parameter and a physically realizable phase factor of interference between a continuum and a discrete mode that leads to Fano resonance. Using a specially designed metamaterial, namely waveguided plasmonic crystal with a spatially varying orientation axis of plasmonic grating, we demonstrate control on the spectral asymmetry of the Fano resonance through changes in the geometric phase of polarized light. In this scenario, the changes in the geometric phase for input left, and right circular polarized light arises due to varying orientation angle of the grating axis. The systematic changes in the geometric phase and the resulting q-parameter of Fano resonance is interpreted by an appropriate theoretical model connecting the two physical entities. The demonstrated control over the spectral line shape of Fano resonance achieved by tailoring geometric phase may open up novel routes for polarization-based photonic applications.
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Submitted 5 May, 2019;
originally announced May 2019.
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Solution Processed CMOS compatible Carbon Nano-dots Based Heterojunction for Enhanced UV Detector
Authors:
Rishi Maiti,
Subhrajit Mukherjee,
Tamal Dey,
Samit K Ray
Abstract:
Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the fabrication of solution processed Carbon nano-dots (CNDs)/n-Si heterojunction showing broadband spectral response with a peak responsivity of ~ 1.25 A/W in UV (~30…
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Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the fabrication of solution processed Carbon nano-dots (CNDs)/n-Si heterojunction showing broadband spectral response with a peak responsivity of ~ 1.25 A/W in UV (~300 nm) wavelength. The surface topography and chemical information of synthesized CNDs via a facile synthesis route have been characterized showing the presence of surface chemical states resulting broad optical emission. The CNDs/n-Si photo diodes exhibit very low dark current (~500 pA), excellent rectification ratio (~5*10^3), and very good photo-modulation in UV region. Given the solution-processing capability of the devices and extraordinary optical properties of CNDs, the use of CNDs will open up unique opportunities for future high-performance, low-cost DUV photo detectors.
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Submitted 24 July, 2018;
originally announced July 2018.
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Weak value amplification using asymmetric spectral response of Fano resonance as a natural pointer
Authors:
Ankit K. Singh,
Subir K. Ray,
Shubham Chandel,
Simonty Pal,
Angad Gupta,
P. Mitra,
N. Ghosh
Abstract:
Weak measurement enables faithful amplification and high precision measurement of small physical parameters and is under intensive investigation as an effective tool in metrology and for addressing foundational questions in quantum mechanics. Most of the experimental reports on weak measurements till date have employed external symmetric Gaussian pointers. Here, we demonstrate its universal nature…
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Weak measurement enables faithful amplification and high precision measurement of small physical parameters and is under intensive investigation as an effective tool in metrology and for addressing foundational questions in quantum mechanics. Most of the experimental reports on weak measurements till date have employed external symmetric Gaussian pointers. Here, we demonstrate its universal nature in a system involving asymmetric spectral response of Fano resonance as the pointer arising naturally in precisely designed metamaterials, namely, waveguided plasmonic crystals. The weak coupling arises due to a tiny shift in the asymmetric spectral response between two orthogonal linear polarizations. By choosing the pre- and post-selected polarization states to be nearly mutually orthogonal, we observe both real and imaginary weak value amplifications manifested as spectacular shift of the peak frequency of Fano resonance and narrowing (or broadening) of the resonance line width, respectively. Weak value amplification using asymmetric Fano spectral response broadens the domain of applicability of weak measurements using natural spectral line shapes as pointer in wide range of physical systems.
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Submitted 26 September, 2017;
originally announced September 2017.
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Polarization-tailored Fano interference in plasmonic crystals: A Mueller matrix model of anisotropic Fano resonance
Authors:
S. K. Ray,
S. Chandel,
A. K. Singh,
A. Kumar,
A. Mandal. S. Misra,
P. Mitra,
N. Ghosh
Abstract:
We present a simple yet elegant Mueller matrix approach for controlling the Fano interference effect and engineering the resulting asymmetric spectral line shape in anisotropic optical system. The approach is founded on a generalized model of anisotropic Fano resonance, which relates the spectral asymmetry to two physically meaningful and experimentally accessible parameters of interference, namel…
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We present a simple yet elegant Mueller matrix approach for controlling the Fano interference effect and engineering the resulting asymmetric spectral line shape in anisotropic optical system. The approach is founded on a generalized model of anisotropic Fano resonance, which relates the spectral asymmetry to two physically meaningful and experimentally accessible parameters of interference, namely, the Fano phase shift and the relative amplitudes of the interfering modes. The differences in these parameters between orthogonal linear polarizations in an anisotropic system are exploited to desirably tune the Fano spectral asymmetry using pre- and post-selection of optimized polarization states. Experimental control on the Fano phase and the relative amplitude parameters and resulting tuning of spectral asymmetry is demonstrated in waveguided plasmonic crystals using Mueller matrix-based polarization analysis. The approach enabled tailoring of several exotic regimes of Fano resonance including the complete reversal of the spectral asymmetry. The demonstrated control and the ensuing large tunability of Fano resonance in anisotropic systems shows potential for Fano resonance-based applications involving control and manipulation of electromagnetic waves at the nano scale.
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Submitted 19 September, 2016;
originally announced September 2016.
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Transverse spin and transverse momentum in scattering of plane waves
Authors:
Sudipta Saha,
Ankit K. Singh,
Subir K. Ray,
Ayan Banerjee,
Subhasish Dutta Gupta,
Nirmalya Ghosh
Abstract:
We study the near field to the far field evolution of spin angular momentum (SAM) density and the Poynting vector of the scattered waves from spherical scatterers. The results show that at the near field, the SAM density and the Poynting vector are dominated by their transverse components. While the former (transverse SAM) is independent of the helicity of the incident circular polarization state,…
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We study the near field to the far field evolution of spin angular momentum (SAM) density and the Poynting vector of the scattered waves from spherical scatterers. The results show that at the near field, the SAM density and the Poynting vector are dominated by their transverse components. While the former (transverse SAM) is independent of the helicity of the incident circular polarization state, the latter (transverse Poynting vector) depends upon the polarization state. It is further demonstrated that the magnitudes and the spatial extent of the transverse SAM and the transverse momentum components can be controllably enhanced by exploiting the interference of the transverse electric and transverse magnetic scattering modes.
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Submitted 6 June, 2016; v1 submitted 3 June, 2016;
originally announced June 2016.
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Complete polarization characterization of single plasmonic nanoparticle enabled by a novel Dark-field Mueller matrix spectroscopy system
Authors:
Shubham Chandel,
Jalpa Soni,
Subir K. Ray,
Anwesh Das,
Anirudha Ghosh,
Satyabrata Raj,
Nirmalya Ghosh
Abstract:
Information on the polarization properties of scattered light from plasmonic systems are of paramount importance due to fundamental interest and potential applications. However, such studies are severely compromised due to the experimental difficulties in recording full polarization response of plasmonic nanostructures. Here, we report on a novel Mueller matrix spectroscopic system capable of acqu…
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Information on the polarization properties of scattered light from plasmonic systems are of paramount importance due to fundamental interest and potential applications. However, such studies are severely compromised due to the experimental difficulties in recording full polarization response of plasmonic nanostructures. Here, we report on a novel Mueller matrix spectroscopic system capable of acquiring complete polarization information from single isolated plasmonic nanoparticle/nanostructure. The outstanding issues pertaining to reliable measurements of full 4X4 spectroscopic scattering Mueller matrices from single nanoparticle/nanostructures are overcome by integrating an efficient Mueller matrix measurement scheme and a robust calibration method with a dark-field microscopic spectroscopy arrangement.The spectral polarization responses of the required polarization state generator, analyzer units, the imaging and the detection systemsare taken care off by eigenvalue calibration, thus enabling recording of the spectral polarization response (Mueller matrix) exclusively of the plasmonic system. Feasibility of quantitative Mueller matrix polarimetryand its potential utility is illustrated on a simple plasmonic system, that of gold nanorods. The demonstrated novel ability to record full polarization information over a broad wavelength range and to quantify the intrinsic plasmon polarimetry characteristics via Mueller matrix inverse analysis should lead to a novel route towards quantitative understanding, analysis / interpretation of a number of intricate plasmonic effects and may also prove useful towards development of polarization-controlled novel sensing schemes.
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Submitted 11 November, 2015;
originally announced November 2015.
