-
Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Authors:
Md Golam Morshed,
Laura Rehm,
Ankit Shukla,
Yunkun Xie,
Samiran Ganguly,
Shaloo Rakheja,
Andrew D. Kent,
Avik W. Ghosh
Abstract:
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) based on low-barrier magnets (LBMs) are natural sources of TRNGs, they tend to suffer from device-to-device variability, low speed, and temperature sensi…
▽ More
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) based on low-barrier magnets (LBMs) are natural sources of TRNGs, they tend to suffer from device-to-device variability, low speed, and temperature sensitivity. Instead, medium-barrier magnets (MBMs) operated with nanosecond pulses - denoted, stochastic magnetic actuated random transducer (SMART) devices - are potentially superior candidates for such applications. We present a systematic analysis of spin-torque-driven switching of MBM-based pMTJs (Eb ~ 20 - 40 kBT) as a function of pulse duration (1 ps to 1 ms), by numerically solving their macrospin dynamics using a 1-D Fokker-Planck equation. We investigate the impact of voltage, temperature, and process variations (MTJ dimensions and material parameters) on the switching probability of the device. Our findings indicate SMART devices activated by short-duration pulses (< 1 ns) are much less sensitive to process-voltage-temperature (PVT) variations while consuming lower energy (~ fJ) than the same devices operated with longer pulses. Our results show a path toward building fast, energy-efficient, and robust TRNG hardware units for solving optimization problems.
△ Less
Submitted 28 October, 2023;
originally announced October 2023.
-
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices
Authors:
Zi**g Zhao,
Shaloo Rakheja,
Wenjuan Zhu
Abstract:
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at the device, circuit, and system levels. Reconfigurable transistors possess the capability to transform into both n-type and p-type transistors dynamically during…
▽ More
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at the device, circuit, and system levels. Reconfigurable transistors possess the capability to transform into both n-type and p-type transistors dynamically during operation. This transistor-level reconfigurability enables field-programmable logic circuits with fewer components compared to conventional circuits. However, the reconfigurability requires additional polarity control gates in the transistor and potentially impairs the gain from a smaller footprint. In this paper, vertical transistors with ambipolar MoTe2 channels are fabricated using the transfer-metal method. The efficient asymmetric electrostatic gating in source and drain contacts gives rise to different Schottky barriers at the two contacts. Consequently, the ambipolar conduction is reduced to unipolar conduction due to different Schottky barrier widths for electrons and holes. The current flow direction determines the preferred carrier type. Temperature-dependent measurements reveal the Schottky barrier-controlled conduction in the vertical transistors and confirm different Schottky barrier widths with and without electrostatic gating. Without the complexity overhead from polarity control gates, control-free vertical reconfigurable transistors promise higher logic density and lower cost in future integrated circuits.
△ Less
Submitted 15 September, 2023;
originally announced September 2023.
-
Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Authors:
Ashwin Tunga,
Zi**g Zhao,
Ankit Shukla,
Wenjuan Zhu,
Shaloo Rakheja
Abstract:
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and field-emission processes of carrier injection that occur at a Schottky contact. The numerical model is then simplified to yield an analytic equation for current versu…
▽ More
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and field-emission processes of carrier injection that occur at a Schottky contact. The numerical model is then simplified to yield an analytic equation for current versus voltage ($I$-$V$) in the SB-FET. The lateral electric field at the junction, controlling the carrier injection, is obtained by accurately modeling the electrostatics and the tunneling barrier width. Unlike previous SB-FET models that are valid for near-equilibrium conditions, this model is applicable for a broad bias range as it incorporates the pertinent physics of thermionic, thermionic field-emission, and field-emission processes from a 3D metal into a 2D semiconductor. The $I$-$V$ model is validated against the measurement data of 2-, 3-, and 4-layer ambipolar MoTe$_2$ SB-FETs fabricated in our lab, as well as the published data of unipolar 2D SB-FETs using MoS$_2$. Finally, the model's physics is tested rigorously by comparing model-generated data against TCAD simulation data.
△ Less
Submitted 10 July, 2023;
originally announced July 2023.
-
A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
Authors:
Ankit Shukla,
Laura Heller,
Md Golam Morshed,
Laura Rehm,
Avik W. Ghosh,
Andrew D. Kent,
Shaloo Rakheja
Abstract:
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with $\lesssim$ 200~Mb/s throughput and pJ/bit energy consumption. A high temper…
▽ More
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with $\lesssim$ 200~Mb/s throughput and pJ/bit energy consumption. A high temperature sensitivity, however, adversely affects their performance as a TRNG. Superparamagnetic MTJs employing low-barrier magnets (LBMs) have also been used for TRNG operation. Although LBM-based MTJs can operate at low energy, they suffer from slow dynamics, sensitivity to process variations, and low fabrication yield. In this paper, we model a TRNG based on medium-barrier magnets (MBMs) with perpendicular magnetic anisotropy. The proposed MBM-based TRNG is driven with short voltage pulses to induce ballistic, yet stochastic, magnetization switching. We show that the proposed TRNG can operate at frequencies of about 500~MHz while consuming less than 100~fJ/bit of energy. In the short-pulse ballistic limit, the switching probability of our device shows robustness to variations in temperature and material parameters relative to LBMs and HBMs. Our results suggest that MBM-based MTJs are suitable candidates for building fast and energy-efficient TRNG hardware units for probabilistic computing.
△ Less
Submitted 18 April, 2023;
originally announced April 2023.
-
Switching time of spin-torque-driven magnetization in biaxial ferromagnets
Authors:
Ankit Shukla,
Arun Parthasarathy,
Shaloo Rakheja
Abstract:
We analytically model the magnetization switching time of a biaxial ferromagnet driven by an antidam**-like spin torque. The macrospin magnetization dynamics is mapped to an energy-flow equation, wherein a rational-function approximation of the elliptic integrals for moderate spin current and small dam** results in a closed-form expression of the switching time. Randomness in the initial angle…
▽ More
We analytically model the magnetization switching time of a biaxial ferromagnet driven by an antidam**-like spin torque. The macrospin magnetization dynamics is mapped to an energy-flow equation, wherein a rational-function approximation of the elliptic integrals for moderate spin current and small dam** results in a closed-form expression of the switching time. Randomness in the initial angle of magnetization gives the distribution function of the switching time. The analytic model conforms to the results obtained from Monte Carlo simulation for a broad range of material parameters. Our results can ameliorate design and benchmarking of in-plane spin torque magnetic memory by obviating expensive numerical computation.
△ Less
Submitted 17 March, 2020; v1 submitted 9 January, 2020;
originally announced January 2020.
-
Precessional spin-torque dynamics in biaxial antiferromagnets
Authors:
Arun Parthasarathy,
Egecan Cogulu,
Andrew D. Kent,
Shaloo Rakheja
Abstract:
The Néel order of an antiferromagnet subject to a spin torque can undergo precession in a circular orbit about any chosen axis. To orient and stabilize the motion against the effects of magnetic anisotropy, the spin polarization should have components in-plane and normal to the plane of the orbit, where the latter must exceed a threshold. For biaxial antiferromagnets, the precessional motion is de…
▽ More
The Néel order of an antiferromagnet subject to a spin torque can undergo precession in a circular orbit about any chosen axis. To orient and stabilize the motion against the effects of magnetic anisotropy, the spin polarization should have components in-plane and normal to the plane of the orbit, where the latter must exceed a threshold. For biaxial antiferromagnets, the precessional motion is described by the equation for a damped-driven pendulum, which has hysteresis a function of the spin current with a critical value where the period diverges. The fundamental frequency of the motion varies inversely with the dam**, and as $(x^p-1)^{1/p}$ with the drive-to-criticality ratio $x$ and the parameter $p>2$. An approximate closed-form result for the threshold spin current is presented, which depends on the minimum cutoff frequency the orbit can support. Precession about the hard axis has zero cutoff frequency and the lowest threshold, while the easy axis has the highest cutoff. A device setup is proposed for electrical control and detection of the dynamics, which is promising to demonstrate a tunable terahertz nano-oscillator.
△ Less
Submitted 13 October, 2020; v1 submitted 1 November, 2019;
originally announced November 2019.
-
Phenomenological description of the dynamics of bipartite antiferromagnets in the limit of strong exchange
Authors:
Arun Parthasarathy,
Shaloo Rakheja
Abstract:
The equation of motion of the staggered order parameter is derived in a step-by-step manner from the coupled Landau-Lifshitz-Gilbert dynamics of bipartite spin moments in the limit of strong antiferromagnetic exchange coupling.
The equation of motion of the staggered order parameter is derived in a step-by-step manner from the coupled Landau-Lifshitz-Gilbert dynamics of bipartite spin moments in the limit of strong antiferromagnetic exchange coupling.
△ Less
Submitted 1 May, 2019; v1 submitted 6 April, 2019;
originally announced April 2019.
-
Dynamics of Magnetoelectric Reversal of Antiferromagnetic Domain
Authors:
Arun Parthasarathy,
Shaloo Rakheja
Abstract:
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may decompose into local multi-domain switching events. In thin films of Cr2O3, the magnetoelectric coercivity and the switching speed found from experiments are co…
▽ More
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may decompose into local multi-domain switching events. In thin films of Cr2O3, the magnetoelectric coercivity and the switching speed found from experiments are considerably lower than expected from magnetic anisotropy, similar to Brown's paradox in ferromagnetic materials. Multi-domain effects originate because antiferromagnetic domain walls are metastably pinned by lattice defects, not due to reduction of magnetostatic energy, which is negligible. This paper theoretically analyzes domain reversal in thin-film magnetoelectric antiferromagnets in the form of nucleation, domain wall propagation, and coherent rotation. The timescales of reversal mechanisms are modeled as a function of applied magnetoelectric pressure. The theory is assessed with reference to latest experimental works on magnetoelectric switching of thin-film Cr2O3: domain wall propagation is found to be dominant and responsible for switching in the experiments. The results bear implications in the energy-delay performance of ME memory devices utilizing antiferromagnetic insulators, which are prospective for nonvolatile technology.
△ Less
Submitted 19 February, 2019; v1 submitted 30 December, 2018;
originally announced December 2018.
-
An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
Authors:
Elahe Yarmoghaddam,
Nazila Haratipour,
Steven J. Koester,
Shaloo Rakheja
Abstract:
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both hole and electron charges for ambipolar transport characteristics. The model comprehends the in-plane band-structure anisotropy in BP, as well as…
▽ More
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both hole and electron charges for ambipolar transport characteristics. The model comprehends the in-plane band-structure anisotropy in BP, as well as the asymmetry in electron and hole current conduction characteristics. The model also includes the effect of Schottky-type source/drain contact resistances, which are voltage-dependent and can significantly limit current conduction in the on-state in BP FETs. Model parameters are extracted using measured data of back-gated BP transistors with gate lengths of 1000 nm and 300 nm with BP thickness of 7.3 nm and 8.1 nm, and for the temperature range of 180 K to 298 K. Compared to previous BP models that are validated only for room-temperature and near-equilibrium bias conditions (low drain-source voltage), we demonstrate excellent agreement between the data and model over a broad range of bias and temperature values. The model is also validated against numerical TCAD data of top-gated BP transistors with a channel length of 300 nm. The model is implemented in Verilog-A and the capability of the model to handle both dc and transient circuit simulations is demonstrated using SPECTRE. The model not only provides a physical insight into technology-device interaction in BP transistors, but can also be used to design and optimize BP-based circuits using a standard hierarchical circuit simulator.
△ Less
Submitted 13 November, 2018; v1 submitted 9 November, 2018;
originally announced November 2018.
-
Reversal Time of Jump-Noise Dynamics for Large Nucleation
Authors:
Arun Parthasarathy,
Shaloo Rakheja
Abstract:
The jump-noise is a phenomenological stochastic process used to model the thermal fluctuation of magnetization in nanomagnets. In this work, the large nucleation regime of jump-noise dynamics is studied, and its reversal time is characterized from Monte Carlo simulations and analysis. Results show that the reversal time of jump-noise dynamics for large nucleation is asymptotically equal to the tim…
▽ More
The jump-noise is a phenomenological stochastic process used to model the thermal fluctuation of magnetization in nanomagnets. In this work, the large nucleation regime of jump-noise dynamics is studied, and its reversal time is characterized from Monte Carlo simulations and analysis. Results show that the reversal time of jump-noise dynamics for large nucleation is asymptotically equal to the time constant associated with a single jump-noise scattering event from the energy minimum in the energy landscape of the magnetization. The reversal time for large nucleation depends linearly on the height of the energy barrier for large barriers. The significance of the large nucleation regime of jump-noise dynamics to phenomenologically explain the magnetoelectric switching of antiferromagnetic order parameter is also prospected.
△ Less
Submitted 25 July, 2018;
originally announced July 2018.
-
Voltage-Controlled Topological-Spin Switch for Ultra-Low-Energy Computing--Performance Modeling and Benchmarking
Authors:
Shaloo Rakheja,
Michael E. Flattè,
Andrew D. Kent
Abstract:
A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operations with sub-10 aJ energy-per-bit and energy-delay product on the order of $10^{-27}$ Js. The device uses a topological insulator (TI), which has the highest efficiency of conversion of electric field to spin torque yet…
▽ More
A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operations with sub-10 aJ energy-per-bit and energy-delay product on the order of $10^{-27}$ Js. The device uses a topological insulator (TI), which has the highest efficiency of conversion of electric field to spin torque yet observed at room temperature, and a low-moment magnetic insulator (MI) that can respond rapidly to a given spin torque. We present the theory of operation of vTOPSS, develop analytic models of its performance metrics, elucidate performance scaling with dimensions and voltage, and benchmark vTOPSS against existing spin-based and CMOS devices. Compared to existing spin-based devices, such as all-spin logic and charge-spin logic, vTOPSS offers 100$\times$ lower energy dissipation and (40-100)$\times$ lower energy-delay product. With experimental advances and improved material properties, we show that the energy-delay product of vTOPSS can be lowered to $10^{-29}$ Js, competitive against existing CMOS technology. Finally, we establish that interconnect issues that dominate the performance in CMOS logic are relatively less significant for vTOPSS, implying that highly resistive materials can indeed be used to interconnect vTOPSS devices.
△ Less
Submitted 21 February, 2018;
originally announced February 2018.
