Showing 1–23 of 23 results for author: Rahman, R

Life and Death of a Thin Liquid Film

Authors: Muhammad Rizwanur Rahman, Li Shen, James P. Ewen, D. M. Heyes, Daniele Dini, E. R. Smith

Abstract: Thin films, bubbles and membranes are central to numerous natural and engineering processes, i.e., in thin-film solar cells, coatings, biosensors, electrowetting displays, foams, and emulsions. Yet, the characterization and an adequate understanding of their rupture is limited by the scarcity of atomic detail. We present here the complete life-cycle of freely suspended films using non-equilibrium… ▽ More Thin films, bubbles and membranes are central to numerous natural and engineering processes, i.e., in thin-film solar cells, coatings, biosensors, electrowetting displays, foams, and emulsions. Yet, the characterization and an adequate understanding of their rupture is limited by the scarcity of atomic detail. We present here the complete life-cycle of freely suspended films using non-equilibrium molecular dynamics simulations of a simple atomic fluid free of surfactants and surface impurities, thus isolating the fundamental rupture mechanisms. Counter to the conventional notion that rupture occurs randomly, we discovered a short-term 'memory' by rewinding in time from a rupture event, extracting deterministic behaviors from apparent stochasticity. A comprehensive investigation of the key rupture-stages including both unrestrained and frustrated propagation is made - characterization of the latter leads to a first-order correction to the classical film-retraction theory. Furthermore, the highly resolved time window reveals that the different modes of the morphological development, typically characterized as heterogeneous nucleation and spinodal decomposition, continuously evolve seamlessly with time from one into the other. △ Less

Submitted 1 November, 2023; originally announced November 2023.

First-Principles Study of Large Gyrotropy in MnBi for Infrared Thermal Photonics

Authors: Md Roknuzzaman, Sathwik Bharadwaj, Yifan Wang, Chinmay Khandekar, Dan Jiao, Rajib Rahman, Zubin Jacob

Abstract: Nonreciprocal gyrotropic materials have attracted significant interest recently in material physics, nanophotonics, and topological physics. Most of the well-known nonreciprocal materials, however, only show nonreciprocity under a strong external magnetic field and within a small segment of the electromagnetic spectrum. Here, through first-principles density functional theory calculations, we show… ▽ More Nonreciprocal gyrotropic materials have attracted significant interest recently in material physics, nanophotonics, and topological physics. Most of the well-known nonreciprocal materials, however, only show nonreciprocity under a strong external magnetic field and within a small segment of the electromagnetic spectrum. Here, through first-principles density functional theory calculations, we show that due to strong spin-orbit coupling manganese-bismuth (MnBi) exhibits nonreciprocity without any external magnetic field and a large gyrotropy in a broadband long-wavelength infrared regime (LWIR). Further, we design a multi-layer structure based on MnBi to obtain a maximum degree of spin-polarized thermal emission at 7 $μ$m. The connection established here between large gyrotropy and the spin-polarized thermal emission points to a potential use of MnBi to develop spin-controlled thermal photonics platforms. △ Less

Submitted 15 June, 2023; originally announced June 2023.

Disparity in the Evolving COVID-19 Collaboration Network

Authors: Huimin Xu, Redoan Rahman, Ajay Jaiswal, Julia Fensel, Abhinav Peri, Ka-mesh Peri, Griffin M Weber, Ying Ding

Abstract: The COVID 19 pandemic has paused many ongoing research projects and unified researchers' attention to focus on COVID 19 related issues. Our project traces 712294 scientists' publications related to COVID 19 for two years, from January 2020 to December 2021, to detect the dynamic evolution patterns of the COVID 19 collaboration network over time. By studying the collaboration network of COVID 19 sc… ▽ More The COVID 19 pandemic has paused many ongoing research projects and unified researchers' attention to focus on COVID 19 related issues. Our project traces 712294 scientists' publications related to COVID 19 for two years, from January 2020 to December 2021, to detect the dynamic evolution patterns of the COVID 19 collaboration network over time. By studying the collaboration network of COVID 19 scientists, we observe how a new scientific community has been built in preparation for a sudden shock. The number of newcomers grows incrementally, and the connectivity of the collaboration network shifts from loose to tight promptly. Even though every scientist has an equal opportunity to start a study, collaboration disparity still exists. Following the scale-free distribution, only a few top authors are highly connected with other authors. These top authors are more likely to attract newcomers and work with each other. As the collaboration network evolves, the increase rate in the probability of attracting newcomers for authors with higher degrees increases, whereas the increase rates in the likelihood of forming new links among authors with higher degrees decreases. This highlights the interesting trend that the COVID pandemic alters the research collaboration trends that star scientists are starting to collaborate more with newcomers but less with existing collaborators, which, in a certain way, reduces the collaboration disparity. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Quantifying Multiphase Flow of Aqueous Acid and Gas CO$_2$ in Deforming Porous Media Subject to Dissolution

Authors: Rafid Musabbir Rahman, Carson Kocmick, Colin Shaw, Yaofa Li

Abstract: Mineral dissolution in porous media coupled with single- or multi-phase flows is pervasive in natural and engineering systems including carbon capture and sequestration (CCS) and acid stimulation in reservoir engineering. Dissolution of minerals occurs as chemicals in the solid phase is transformed into ions in the aqueous phase, effectively modifying the physical, hydrological and geochemical pro… ▽ More Mineral dissolution in porous media coupled with single- or multi-phase flows is pervasive in natural and engineering systems including carbon capture and sequestration (CCS) and acid stimulation in reservoir engineering. Dissolution of minerals occurs as chemicals in the solid phase is transformed into ions in the aqueous phase, effectively modifying the physical, hydrological and geochemical properties of the solid matrix, and thus leading to the strong coupling between local dissolution rate and pore-scale flow. However, our fundamental understanding of this coupling effect at the pore level is still limited. In this work, mineral dissolution is studied using novel calcite-based porous micromodels under single- and multiphase conditions, with a focus on the interactions of mineral dissolution with pore flow. The microfluidic devices used in the experiments were fabricated in calcite using photolithography and wet etching. These surrogate porous media offer precise control over the structures and chemical properties and facilitate unobstructed and unaberrated optical access to the pore flow with micro-PIV methods. The preliminary results provide a unique view of the flow dynamics during mineral dissolution. Based on these pore-scale measurements, correlations between pore-scale flow and dissolution rates can be developed for several representative conditions. △ Less

Submitted 1 January, 2023; originally announced January 2023.

Comments: Preprint to be submitted to lab on a chip

Thin Film Rupture from the Atomic Scale

Authors: Muhammad Rizwanur Rahman, Li Shen, James P. Ewen, Benjamin Collard, D. M. Heyes, Daniele Dini, E. R. Smith

Abstract: The retraction of thin films, as described by the Taylor-Culick (TC) theory, is subject to widespread debate, particularly for films at the nanoscale. We use non-equilibrium molecular dynamics simulations to explore the validity of the assumptions used in continuum models, by tracking the evolution of holes in a film. By deriving a new mathematical form for the surface shape and considering a loca… ▽ More The retraction of thin films, as described by the Taylor-Culick (TC) theory, is subject to widespread debate, particularly for films at the nanoscale. We use non-equilibrium molecular dynamics simulations to explore the validity of the assumptions used in continuum models, by tracking the evolution of holes in a film. By deriving a new mathematical form for the surface shape and considering a locally varying surface tension at the front of the retracting film, we reconcile the original theory with our simulation data to recover a corrected TC speed valid at the nanoscale. △ Less

Submitted 12 December, 2022; v1 submitted 18 November, 2022; originally announced November 2022.

A Non-Volatile All-Spin Non-Binary Matrix Multiplier: An Efficient Hardware Accelerator for Machine Learning

Authors: Rahnuma Rahman, Supriyo Bandyopadhyay

Abstract: We propose and analyze a compact and non-volatile nanomagnetic (all-spin) non-binary matrix multiplier performing the multiply-and-accumulate (MAC) operation using two magnetic tunnel junctions - one activated by strain to act as the multiplier, and the other activated by spin-orbit torque pulses to act as a domain wall synapse that performs the operation of the accumulator. It has two advantages… ▽ More We propose and analyze a compact and non-volatile nanomagnetic (all-spin) non-binary matrix multiplier performing the multiply-and-accumulate (MAC) operation using two magnetic tunnel junctions - one activated by strain to act as the multiplier, and the other activated by spin-orbit torque pulses to act as a domain wall synapse that performs the operation of the accumulator. It has two advantages over the usual crossbar-based electronic non-binary matrix multiplier. First, while the crossbar architecture requires N3 devices to multiply two matrices, we require only 2N2 devices. Second, our matrix multiplier is non-volatile and retains the information about the product matrix after being powered off. Here, we present an example where each MAC operation can be performed in ~5 ns and the maximum energy dissipated per operation is ~60Nmax aJ, where Nmax is the largest matrix size. This provides a very useful hardware accelerator for machine learning and artificial intelligence tasks which involve the multiplication of large matrices. The non-volatility allows the matrix multiplier to be embedded in powerful non-von-Neumann architectures, including processor-in-memory. It also allows much of the computing to be done at the edge (of internet-of-things) while reducing the need to access the cloud, thereby making artificial intelligence more resilient against cyberattacks. △ Less

Submitted 20 November, 2022; v1 submitted 11 November, 2022; originally announced November 2022.

Comments: A slightly shorter version of this article has been accepted for publication in IEEE Transactions on Electron Devices. The replacement corrects some errors in the previously uploaded version

Journal ref: IEEE Transactions on Electron Devices, 69 (12), 7120-7127 (2022)

Robustness of binary stochastic neurons implemented with low barrier nanomagnets made of dilute magnetic semiconductors

Authors: Rahnuma Rahman, Supriyo Bandyopadhyay

Abstract: Binary stochastic neurons (BSNs) are excellent hardware accelerators for machine learning. A popular platform for implementing them are low- or zero-energy barrier nanomagnets possessing in-plane magnetic anisotropy (e.g. circular disks or quasi-elliptical disks with very small eccentricity). Unfortunately, small geometric variations in the lateral shapes of such nanomagnets can produce large chan… ▽ More Binary stochastic neurons (BSNs) are excellent hardware accelerators for machine learning. A popular platform for implementing them are low- or zero-energy barrier nanomagnets possessing in-plane magnetic anisotropy (e.g. circular disks or quasi-elliptical disks with very small eccentricity). Unfortunately, small geometric variations in the lateral shapes of such nanomagnets can produce large changes in the BSN response times if the nanomagnets are made of common metallic ferromagnets (Co, Ni, Fe) with large saturation magnetization. Additionally, the response times are also very sensitive to initial conditions. Here, we show that if the nanomagnets are made of dilute magnetic semiconductors with much smaller saturation magnetization, then the variability in their response times (due to shape variations and variation in the initial condition) is drastically suppressed. This significantly reduces the device-to-device variation, which is a serious challenge for large scale neuromorphic systems. △ Less

Submitted 3 May, 2022; originally announced May 2022.

Journal ref: IEEE Magnetics Letters, 13, 4505104 (2022)

The Intrinsic Fragility of the Liquid-Vapor Interface: A Stress Network Perspective

Authors: Muhammad Rizwanur Rahman, Li Shen, James P. Ewen, Daniele Dini, E. R. Smith

Abstract: The evolution of the liquid-vapour interface of a Lennard-Jones fluid is examined with molecular dynamics simulations using the intrinsic sampling method. Results suggest, in agreement with capillary wave theory, clear dam** of the density profiles as the temperature is increased. We identify a linear variation of the space-filling nature (fractal dimension) of the stress-clusters at the intrins… ▽ More The evolution of the liquid-vapour interface of a Lennard-Jones fluid is examined with molecular dynamics simulations using the intrinsic sampling method. Results suggest, in agreement with capillary wave theory, clear dam** of the density profiles as the temperature is increased. We identify a linear variation of the space-filling nature (fractal dimension) of the stress-clusters at the intrinsic surface with increasing surface tension, or equivalently, with decreasing temperature. A percolation analysis of these stress networks indicates that the stress field is more disjointed at higher temperatures. This leads to more fragile interfaces that result in a reduction in surface tension at higher temperature. △ Less

Submitted 5 April, 2022; v1 submitted 24 January, 2022; originally announced January 2022.

The Strong Sensitivity of the Characteristics of Binary Stochastic Neurons Employing Low Barrier Nanomagnets to Small Geometrical Variations

Authors: Rahnuma Rahman, Supriyo Bandyopadhyay

Abstract: Binary stochastic neurons (BSNs) are excellent activators for machine learning. An ideal platform for implementing them are low- or zero-energy-barrier nanomagnets (LBMs) possessing in-plane anisotropy (e.g. circular or slightly elliptical disks) whose fluctuating magnetization encodes a probabilistic (p-) bit. Here, we show that such a BSN's activation function, the pinning current (which pins th… ▽ More Binary stochastic neurons (BSNs) are excellent activators for machine learning. An ideal platform for implementing them are low- or zero-energy-barrier nanomagnets (LBMs) possessing in-plane anisotropy (e.g. circular or slightly elliptical disks) whose fluctuating magnetization encodes a probabilistic (p-) bit. Here, we show that such a BSN's activation function, the pinning current (which pins the output to a particular binary state), and the response time - all exhibit strong sensitivity to very slight geometric variations in the LBM's cross section. A mere 1% change in the diameter of a circular nanomagnet in any arbitrary direction can alter the response time by a factor of ~4 at room temperature and a 10% change can alter the pinning current by a factor of ~2. All this causes large device-to-device variation which is detrimental to integration. We also show that the energy dissipation is lowered but the response time is increased by replacing a circular cross-section with a slightly elliptical one and then encoding the p-bit in the magnetization component along the major axis. Encoding the p-bit in the magnetization component along the minor axis has the opposite effect. The energy-delay-product, however, is relatively independent of whether the cross-section is a circle or an ellipse and which magnetization component encodes the p-bit in the case of the ellipse. △ Less

Submitted 26 February, 2023; v1 submitted 9 August, 2021; originally announced August 2021.

Comments: This is the accepted version of an article in IEEE Transactions on Nanotechnology

An observable effect of spin inertia in slow magneto-dynamics: Increase of the switching error rates in nanoscale ferromagnets

Authors: Rahnuma Rahman, Supriyo Bandyopadhyay

Abstract: The Landau-Lifshitz-Gilbert (LLG) equation, used to model magneto-dynamics in ferromagnets, tacitly assumes that the angular momentum associated with spin precession can relax instantaneously when the real or effective magnetic field causing the precession is turned off. This neglect of "spin inertia" is unphysical and would violate energy conservation. Recently, the LLG equation was modified to a… ▽ More The Landau-Lifshitz-Gilbert (LLG) equation, used to model magneto-dynamics in ferromagnets, tacitly assumes that the angular momentum associated with spin precession can relax instantaneously when the real or effective magnetic field causing the precession is turned off. This neglect of "spin inertia" is unphysical and would violate energy conservation. Recently, the LLG equation was modified to account for inertia effects. The consensus, however, seems to be that such effects would be unimportant in slow magneto-dynamics that take place over time scales much longer that the relaxation time of the angular momentum, which is typically few fs to perhaps ~100 ps in ferromagnets. Here, we show that there is at least one very serious and observable effect of spin inertia even in slow magneto-dynamics. It involves the switching error probability associated with flip** the magnetization of a nanoscale ferromagnet with an external agent, such as a magnetic field. The switching may take ~ns to complete when the field strength is close to the threshold value for switching, which is much longer than the angular momentum relaxation time, and yet the effect of spin inertia is felt in the switching error probability. This is because the ultimate fate of a switching trajectory, i.e. whether it results in success or failure, is influenced by what happens in the first few ps of the switching action when nutational dynamics due to spin inertia holds sway. Spin inertia increases the error probability, which makes the switching more error-prone. This has vital technological significance because it relates to the reliability of magnetic logic and memory. △ Less

Submitted 25 June, 2021; originally announced June 2021.

Comments: Invited paper accepted for publication in J. Phys: Condens. Matter

Journal ref: Journal of Physics: Condensed Matter, 33, 355801 (2021)

Electron g-factor engineering for non-reciprocal spin photonics

Authors: Parijat Sengupta, Chinmay Khandekar, Todd Van Mechelen, Rajib Rahman, Zubin Jacob

Abstract: We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron garnets. In this work, we present an alternative paradigm that allows tunability and reconfigurability of the non-reciprocity through spintronic approaches. The propo… ▽ More We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron garnets. In this work, we present an alternative paradigm that allows tunability and reconfigurability of the non-reciprocity through spintronic approaches. The proposed design uses the high-spin-orbit coupling of a narrow-band gap semiconductor (InSb) with ferromagnetic dopants. A combination of the intrinsic and a gate-applied electric field gives rise to a strong external Rashba spin-orbit coupling (RSOC) in a magnetically doped InSb film. The RSOC which is gate alterable is shown to adjust the magnetic permeability tensor via the electron g-factor of the medium. We use electronic band structure calculations (k$\cdot$p theory) to show the gate-adjustable RSOC manifest itself in the non-reciprocal coefficient of photon fields via shifts in the Kerr and Faraday rotations. In addition, we show that photon spin properties of dipolar emitters placed in the vicinity of a non-reciprocal electromagnetic environment is distinct from reciprocal counterparts. The Purcell factor (F$_{p}$) of a spin-polarized emitter (right-handed circular dipole) is significantly enhanced due to a larger g-factor while a left-handed dipole remains essentially unaffected. Our work can lead to electron spin controlled reconfigurable non-reciprocal photonic devices. △ Less

Submitted 24 August, 2019; v1 submitted 18 August, 2019; originally announced August 2019.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 101, 035412 (2020)

Double emulsion drop evaporation and resurfacing of daughter droplet

Authors: Muhammad Rizwanur Rahman, Prashant R. Waghmare

Abstract: In this study, we present experimental and theoretical analyses of double emulsion drop evaporation. After the apparent completion of evaporation of the inner phase of a double emulsion drop, surprisingly, a resurfacing of a daughter droplet is observed. We further investigated to hypothesize this phenomenon which allowed us to obtain a prolonged fixed contact line evaporation for a single phase d… ▽ More In this study, we present experimental and theoretical analyses of double emulsion drop evaporation. After the apparent completion of evaporation of the inner phase of a double emulsion drop, surprisingly, a resurfacing of a daughter droplet is observed. We further investigated to hypothesize this phenomenon which allowed us to obtain a prolonged fixed contact line evaporation for a single phase drop along with similar occurrence of resurfacing as of the double emulsion drops. △ Less

Submitted 24 October, 2018; originally announced October 2018.

Comments: 11 Pages, 6 Figures, Journal paper

Channel thickness optimization for ultra thin and 2D chemically doped TFETs

Authors: Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh, Rajib Rahman, Gerhard Klimeck, Joerg Appenzeller

Abstract: 2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operation. The ideal device is characterized by a minimized tunneling distance. However, devices with the thinnest possible body do not necessarily provide… ▽ More 2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operation. The ideal device is characterized by a minimized tunneling distance. However, devices with the thinnest possible body do not necessarily provide the best performance. For example, reducing the channel thickness increases the depletion width in the source which can be a significant part of the total tunneling distance. Hence, it is important to determine the optimum channel thickness for each channel material individually. In this work, we study the optimum channel thickness for three channel materials: WSe$_{2}$, Black Phosphorus (BP), and InAs using full-band self-consistent quantum transport simulations. To identify the ideal channel thickness for each material at a specific do** density, a new analytic model is proposed and benchmarked against the numerical simulations. △ Less

Submitted 29 April, 2018; originally announced April 2018.

Switching Mechanism and the Scalability of vertical-TFETs

Authors: Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan, Gerhard Klimeck, Rajib Rahman

Abstract: In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region, where the materials are n… ▽ More In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region, where the materials are not stacked over is found to be critical for turning off the v-TFET. This extension region makes the scaling of v-TFETs challenging. In addition, due to the presence of both positive and negative charges inside the channel, v-TFETs also exhibit negative capacitance. As a result, v-TFETs have good energy-delay products and are one of the promising candidates for low power applications. △ Less

Submitted 3 December, 2017; v1 submitted 6 November, 2017; originally announced November 2017.

Comments: didn't reach to co-author agreement

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Authors: Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd L. C. Hollenberg

Abstract: The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel do** in ultra-scaled transistors to quantum inf… ▽ More The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel do** in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications. △ Less

Submitted 11 January, 2016; originally announced January 2016.

Journal ref: Nature Nanotechnology 11, 763 (2016)

Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon

Authors: Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C. L. Hollenberg

Abstract: Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fie… ▽ More Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric field dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multi-qubit architectures, based on both strain-only as well as hybrid (strain+field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and/or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. Whilst faster gate operations are realisable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. B 91, 245209, 2015

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Authors: Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman, Joerg Appenzeller

Abstract: In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate… ▽ More In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain do** level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices. △ Less

Submitted 19 June, 2015; v1 submitted 5 February, 2015; originally announced February 2015.

Comments: 7 pages, 8 figures. The revised version is uploaded

Journal ref: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 12-18 (2015)

Evaluation of Electric and Magnetic Fields Distribution and SAR Induced in 3D Models of Water Containers by Radiofrequency Radiation and Their Relationship to the Non-Thermal Effects of Microwaves

Authors: Maher A. A. Abdelsamie, Russly b Abdul Rahman, Shuhaimi Mustafa, M. M. Isa, Dzulkifly Hashim

Abstract: The research works on the biological effects of electromagnetic (EM) radiation have increased globally. Computer simulation models were developed to assess exposure of square, rectangular, pyramidal, and cylindrical water containers to microwave radiation at 300, 900, and 2,400 MHz. The development of the models included determination of EM field distribution and the resulting specific absorption… ▽ More The research works on the biological effects of electromagnetic (EM) radiation have increased globally. Computer simulation models were developed to assess exposure of square, rectangular, pyramidal, and cylindrical water containers to microwave radiation at 300, 900, and 2,400 MHz. The development of the models included determination of EM field distribution and the resulting specific absorption rate (SAR) in the stored water. These models employed CST STUDIO SUITE 2014 package to solve EM field equations by applying the finite-difference time-domain (FDTD) method. The effect of frequency, packaging shape, and polarization on SAR induced in water was determined. High electric field and point SAR were obtained over the whole azimuth and elevation angles range in the pyramidal container model. The highest values of SAR were induced in water at the sharp edges of the four water container models. The order of the effect on total SAR and maximum point SAR is cylindrical < square < rectangular < pyramidal model at 300, 900, and 2,400 MHz for both vertical and horizontal polarizations. It can be concluded that the variation in the packaging shape of the containers, polarization, irradiation geometry, and frequency. In addition, the sharp edges of the container models significantly affect the calculation and distribution of electric and magnetic fields and SAR values induced in the stored water, which in turn could cause variations in the non-thermal effects of the electromagnetic fields in the stored water. △ Less

Submitted 3 January, 2017; v1 submitted 5 October, 2014; originally announced October 2014.

Comments: 45 pages, 18 figures, 10 tables. There is an update in the introduction and discussion parts of this version includes explanation about possible Mechanism for Non-thermal Effects of Microwaves

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Authors: Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit Voisin, Sven Rogge, Gerhard Klimeck, Lloyd L. C. Hollenberg

Abstract: Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric scr… ▽ More Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter ($η_2$) from -1.3 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the static dielectric screening to -1.72 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of $η_2$ to -1.87 $\times$ 10$^{-3} μ$m$^2$/V$^2$, resulting in an excellent agreement of theory with the experimentally measured value of -1.9 $\pm$ 0.2 $\times$ 10$^{-3} μ$m$^2$/V$^2$. Based on our direct comparison of the calculations with the experiment, we conclude that the previously ignored non-static dielectric screening of the donor potential and the lattice strain significantly influence the donor wave function charge density and thereby leads to a better agreement with the available experimental data sets. △ Less

Submitted 7 October, 2014; originally announced October 2014.

Comments: 8 pages, 3 figures

Journal ref: J. Phys.: Condens. Matter 27, 154207, 2015

Evaluation of electric and magnetic fields distribution and SAR induced in 3D models of water containers by radiofrequency radiation using FDTD and FEM simulation techniques

Authors: Maher A. A. Abdelsamie, Russly b Abdul Rahman, Shuhaimi Mustafa, Dzulkifly Hashim

Abstract: In this study, two software packages using different numerical techniques FEKO 6.3 with Finite-Element Method (FEM) and XFDTD 7 with Finite Difference Time Domain Method (FDTD) were used to assess exposure of 3D models of square, rectangular, and pyramidal shaped water containers to electromagnetic waves at 300, 900, and 2400 MHz frequencies. Using the FEM simulation technique, the peak electric f… ▽ More In this study, two software packages using different numerical techniques FEKO 6.3 with Finite-Element Method (FEM) and XFDTD 7 with Finite Difference Time Domain Method (FDTD) were used to assess exposure of 3D models of square, rectangular, and pyramidal shaped water containers to electromagnetic waves at 300, 900, and 2400 MHz frequencies. Using the FEM simulation technique, the peak electric field of 25, 4.5, and 2 V/m at 300 MHz and 15.75, 1.5, and 1.75 V/m at 900 MHz were observed in pyramidal, rectangular, and square shaped 3D container models, respectively. The FDTD simulation method confirmed a peak electric field of 12.782, 10.907, and 10.625 V/m at 2400 MHz in the pyramidal, square, and rectangular shaped 3D models, respectively. The study demonstrated an exceptionally high level of electric field in the water in the two identical pyramid shaped 3D models analyzed using the two different simulation techniques. Both FEM and FDTD simulation techniques indicated variations in the distribution of electric, magnetic fields, and specific absorption rate of water stored inside the 3D container models. The study successfully demonstrated that shape and dimensions of 3D models significantly influence the electric and magnetic fields inside packaged materials; thus, specific absorption rates in the stored water vary according to the shape and dimensions of the packaging materials. △ Less

Submitted 10 June, 2014; originally announced June 2014.

Comments: 22 pages, 30 figures and 2 tables

Journal ref: Journal of Electromagnetic Analysis and Applications, 6, 213-232. (2014)

Molecular Dynamics Simulation of Cross-linked Graphene-Epoxy Nanocomposites

Authors: R. Rahman, A. Haque

Abstract: This paper focuses on molecular dynamics (MD) modeling of graphene reinforced cross-linked epoxy (Gr-Ep) nanocomposite. The goal is to study the influence of geometry, and concentration of reinforcing nanographene sheet (NGS) on interfacial properties and elastic constants such as bulk Young's modulus, and shear modulus of Gr-Ep nanocomposites. The most typical cross-linked configuration was obtai… ▽ More This paper focuses on molecular dynamics (MD) modeling of graphene reinforced cross-linked epoxy (Gr-Ep) nanocomposite. The goal is to study the influence of geometry, and concentration of reinforcing nanographene sheet (NGS) on interfacial properties and elastic constants such as bulk Young's modulus, and shear modulus of Gr-Ep nanocomposites. The most typical cross-linked configuration was obtained in order to use in further simulations. The mechanical properties of this cross-linked structure were determined using MD simulations and the results were verified with those available in literatures. Graphene with different aspect ratios and concentrations (1%, 3% and 5%) were considered in order to construct amorphous unit cells of Gr-Ep nanocomposites. The Gr-Ep nanocomposites system undergoes NVT (constant number of atoms, volume and temperature) and NPT (constant number of atoms, pressure and temperature) ensemble with applied uniform strain field during MD simulation to obtain bulk Young's modulus and shear modulus. The stress-strain response was also evaluated for both amorphous and crystalline unit cells of Gr-Ep system under uni-axial deformation. The cohesive and pullout force vs. displacement response were determined for graphenes with different size. Hence as primary goal of this work, a parametric study using MD simulation was conducted for characterizing interfacial properties and elastic constants with different NGS aspect rations and volume fractions. The MD simulation results show reasonable agreement with available published data in the literature. △ Less

Submitted 10 July, 2012; v1 submitted 13 August, 2011; originally announced August 2011.

Comments: Further Revision and modification in the manuscript

Electron paramagnetic resonance study of ErSc2NC80

Authors: Rizvi Rahman, Archana Tiwari, Geraldine Dantelle, John J. L. Morton, Kyriakos Porfyrakis, Arzhang Ardavan, Klaus-Peter Dinse, G. Andrew D. Briggs

Abstract: We present an electron paramagnetic resonance (EPR) study of ErSc2N@C80 fullerene in which there are two Er3+ sites corresponding to two different configurations of the ErSc2N cluster inside the C80 cage. For each configuration, the EPR spectrum is characterized by a strong anisotropy of the g factors (gx,y = 2.9, gz = 13.0 and gx,y = 5.3, gz = 10.9). Illumination within the cage absorption range… ▽ More We present an electron paramagnetic resonance (EPR) study of ErSc2N@C80 fullerene in which there are two Er3+ sites corresponding to two different configurations of the ErSc2N cluster inside the C80 cage. For each configuration, the EPR spectrum is characterized by a strong anisotropy of the g factors (gx,y = 2.9, gz = 13.0 and gx,y = 5.3, gz = 10.9). Illumination within the cage absorption range (<600 nm) induces a rearrangement of the ErSc2N cluster inside the cage. We follow the temporal dependence of this rearrangement phenomenologically under various conditions. △ Less

Submitted 23 April, 2010; v1 submitted 22 April, 2010; originally announced April 2010.

Comments: 7 pages, 7 figures

Multimillion Atom Simulations with NEMO 3-D

Authors: Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin, Gerhard Klimeck

Abstract: The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representa… ▽ More The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representation of the underlying material become important. The variety of geometries, materials, and do** configurations in semiconductor devices at the nanoscale suggests that a general nanoelectronic modeling tool is needed. The Nanoelectronic Modeling tool (NEMO 3-D) has been developed to address these needs. Based on the atomistic valence-force field (VFF) method and a variety of nearest-neighbor tight-binding models, NEMO 3-D enables the computation of strain for over 64 million atoms and of electronic structure for over 52 million atoms, corresponding to volumes of (110nmx110nmx110nm) and (101nmx101nmx101nm), respectively. This article discusses the theoretical models, essential algorithmic and computational components, and optimization methods that have been used in the development and the deployment of NEMO 3-D. Also, successful applications of NEMO 3-D are demonstrated in the atomistic calculation of single-particle electronic states of (1) self-assembled quantum dots including long-range strain and piezoelectricity; (2) stacked quantum dots ; (3) Phosphorus impurities in Silicon used in quantum computation; (4) Si on SiGe quantum wells (QWs); and (5) SiGe nanowires. △ Less

Submitted 13 January, 2009; originally announced January 2009.

Comments: 35 pages; 37 figures