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Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications
Authors:
A. Doblas,
D. Flores,
S. Hidalgo,
N. Moffat,
G. Pellegrini,
D. Quirion,
J. Villegas,
D. Maneuski,
M. Ruat,
P. Fajardo
Abstract:
LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area betw…
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LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by develo** a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation.
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Submitted 1 June, 2022; v1 submitted 3 February, 2022;
originally announced February 2022.
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Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications
Authors:
E. Currás,
M. Carulla,
M. Centis Vignali,
J. Duarte-Campderros,
M. Fernández,
D. Flores,
A. García,
G. Gómez,
J. González,
S. Hidalgo,
R. Jaramillo,
A. Merlos,
M. Moll,
G. Pellegrini,
D. Quirion,
I. Vila
Abstract:
Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. B…
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Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.
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Submitted 3 April, 2019;
originally announced April 2019.
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Performance of Irradiated RD53A 3D Pixel Sensors
Authors:
S. Terzo,
M. Chmeissani,
G. Giannini,
S. Grinstein,
M. Manna,
G. Pellegrini,
D. Quirion,
D. Vazquez Furelos
Abstract:
The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of $\mathrm{50 \times 50~μm^{2}}$ and $\mathrm{25 \times 100~μm^{2}}$ compatible with the first prototype ASIC for th…
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The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of $\mathrm{50 \times 50~μm^{2}}$ and $\mathrm{25 \times 100~μm^{2}}$ compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to $\mathrm{5 \times 10^{15}~n_{eq}/cm^{2}}$. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.
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Submitted 22 March, 2019; v1 submitted 12 March, 2019;
originally announced March 2019.
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Timing performance of small cell 3D silicon detectors
Authors:
G. Kramberger,
V. Cindro,
D. Flores,
S. Hidalgo,
B. Hiti,
M. Manna,
I. Mandić,
M. Mikuž,
D. Quirion,
G. Pellegrini,
M. Zavrtanik
Abstract:
A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant cont…
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A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50x50 um2 cell at 150 V and -20C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.
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Submitted 15 January, 2019; v1 submitted 8 January, 2019;
originally announced January 2019.
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First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC
Authors:
E. Currás,
J. Duarte-Campderrós,
M. Fernández,
A. García,
G. Gómez,
J. González,
R. Jaramillo,
D. Moya,
I. Vila,
S. Hidalgo,
M. Manna,
G. Pellegrini,
D. Quirion,
D. Pitzl,
A. Ebrahimi,
T. Rohe,
S. Wiederkehr
Abstract:
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including effic…
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A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
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Submitted 4 June, 2018;
originally announced June 2018.
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Radiation hardness of small-pitch 3D pixel sensors up to a fluence of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$
Authors:
J. Lange,
G. Giannini,
S. Grinstein,
M. Manna,
G. Pellegrini,
D. Quirion,
S. Terzo,
D. Vázquez Furelos
Abstract:
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of $3\times10^{16}$ n…
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Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 50$\times$50 $μ$m$^{2}$ devices has been measured in the laboratory and beam tests at CERN SPS. A high charge collected and a high hit efficiency of 98% were found up to the highest fluence. The bias voltage to reach the target efficiency of 97% at perpendicular beam incidence was found to be about 100 V at $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$ and 150 V at $2.8\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, significantly lower than for the previous IBL 3D generation with larger inter-electrode distance and than for planar sensors. The power dissipation at -25$^{\circ}$C and $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$ was found to be 13 mW/cm$^2$. Hence, 3D pixel detectors demonstrated superior radiation hardness and were chosen as the baseline for the inner layer of the ATLAS HL-LHC pixel detector upgrade.
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Submitted 17 September, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Beam test measurements of Low Gain Avalanche Detector single pads and arrays for the ATLAS High Granularity Timing Detector
Authors:
C. Allaire,
J. Benitez,
M. Bomben,
G. Calderini,
M. Carulla,
E. Cavallaro,
A. Falou,
D. Flores,
P. Freeman,
Z. Galloway,
E. L. Gkougkousis,
H. Grabas,
S. Grinstein,
B. Gruey,
S. Guindon,
A. M. Henriques Correia,
S. Hidalgo,
A. Kastanas,
C. Labitan,
D. Lacour,
J. Lange,
F. Lanni,
B. Lenzi,
Z. Luce,
N. Makovec
, et al. (19 additional authors not shown)
Abstract:
For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sen…
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For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3x1.3 mm2 and arrays with 2x2 pads with a surface area of 2x2 mm^2 or 3x3 mm^2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in Autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few μm. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3x1.3 mm^2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfill the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.
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Submitted 9 August, 2018; v1 submitted 2 April, 2018;
originally announced April 2018.
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Radiation Hardness of Thin Low Gain Avalanche Detectors
Authors:
G. Kramberger,
M. Carulla,
E. Cavallaro,
V. Cindro,
D. Flores,
Z. Galloway,
S. Grinstein,
S. Hidalgo,
V. Fadeyev,
J. Lange,
I. Mandic,
G. Medin,
A. Merlos,
F. McKinney-Martinez,
M. Mikuz,
D. Quirion,
G. Pellegrini,
M. Petek,
H. F-W. Sadrozinski,
A. Seiden,
M. Zavrtanik
Abstract:
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate do** of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations.…
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Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate do** of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer do** profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.
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Submitted 16 November, 2017;
originally announced November 2017.
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Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences
Authors:
J. Lange,
S. Grinstein,
M. Manna,
G. Pellegrini,
D. Quirion,
S. Terzo,
D. Vázquez Furelos
Abstract:
A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97%…
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A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.
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Submitted 4 July, 2017;
originally announced July 2017.
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Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$
Authors:
J. Lange,
M. Carulla,
E. Cavallaro,
L. Chytka,
P. M. Davis,
D. Flores,
F. Förster,
S. Grinstein,
S. Hidalgo,
T. Komarek,
G. Kramberger,
I. Mandić,
A. Merlos,
L. Nozka,
G. Pellegrini,
D. Quirion,
T. Sykora
Abstract:
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions.
LGADs with an active thickness of about 45 $μ$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests f…
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Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions.
LGADs with an active thickness of about 45 $μ$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to $10^{15}$ n$_{eq}$/cm$^2$.
The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of $3\times10^{14}$ n$_{eq}$/cm$^2$, similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At $10^{15}$ n$_{eq}$/cm$^2$, the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.
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Submitted 6 May, 2017; v1 submitted 27 March, 2017;
originally announced March 2017.
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Ultra Thin 3D Silicon Detector for Plasma Diagnostics at the ITER Tokamak
Authors:
F. Garcia,
G. Pellegrini,
M. Lozano,
J. P. Balbuena,
C. Fleta,
C. Guardiola,
D. Quirion
Abstract:
An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs…
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An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal to background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 microns, to detect the lowest energetic ions to 20 microns for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented
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Submitted 16 December, 2016;
originally announced January 2017.
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Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments
Authors:
Nils Flaschel,
Dario Ariza,
Sergio Diez,
Marta Gerboles,
Ingrid-Maria Gregor,
Xavier Jorda,
Roser Mas,
David Quirion,
Kerstin Tackmann,
Miguel Ullan
Abstract:
Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today`s prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micr…
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Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today`s prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.
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Submitted 9 May, 2017; v1 submitted 16 November, 2016;
originally announced November 2016.
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Module production of the one-arm AFP 3D pixel tracker
Authors:
S. Grinstein,
E. Cavallaro,
M. Chmeissani,
O. Dorholt,
F. Foerster,
J. Lange,
I. Lopez Paz,
M. Manna,
G. Pellegrini,
D. Quirion,
M. Rijssenbeek,
O. Rohne,
B. Stugu
Abstract:
The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions. AFP will consist of a tracking detector, to measure the momentum of the protons, and a time of flight system to reduce the background from multiple proton-proton interactions. Following an extensive qualification period, 3D silicon pixel sensors were selected fo…
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The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions. AFP will consist of a tracking detector, to measure the momentum of the protons, and a time of flight system to reduce the background from multiple proton-proton interactions. Following an extensive qualification period, 3D silicon pixel sensors were selected for the AFP tracker. The sensors were produced at CNM (Barcelona) during 2014. The tracker module assembly and quality control was performed at IFAE during 2015. The assembly of the first AFP arm and the following installation in the LHC tunnel took place in February 2016. This paper reviews the fabrication process of the AFP tracker focusing on the pixel modules.
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Submitted 19 December, 2016; v1 submitted 3 November, 2016;
originally announced November 2016.
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3D sensors for the HL-LHC
Authors:
D. Vázquez Furelos,
M. Carulla,
E. Cavallaro,
F. Förster,
S. Grinstein,
J. Lange,
I. López Paz,
M. Manna,
G. Pellegrini,
D. Quirion,
S. Terzo
Abstract:
In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promi…
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In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promising candidates for the innermost layers of the Pixel detector due to their excellent radiation hardness at low operation voltages and low power dissipation at moderate temperatures. Recent developments of 3D sensors for the HL-LHC are presented.
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Submitted 27 October, 2016;
originally announced October 2016.
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3D silicon pixel detectors for the High-Luminosity LHC
Authors:
J. Lange,
M. Carulla Areste,
E. Cavallaro,
F. Förster,
S. Grinstein,
I. López Paz,
M. Manna,
G. Pellegrini,
D. Quirion,
S. Terzo,
D. Vázquez Furelos
Abstract:
3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are based on 50x250 um2 large pixels connected to the FE-I4 readout chip. Detectors of this generation were irradiated to HL-LHC fluences and demonstrated excellen…
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3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are based on 50x250 um2 large pixels connected to the FE-I4 readout chip. Detectors of this generation were irradiated to HL-LHC fluences and demonstrated excellent radiation hardness with operational voltages as low as 180 V and power dissipation of 12--15 mW/cm2 at a fluence of about 1e16 neq/cm2, measured at -25 degree C. Moreover, to cope with the higher occupancies expected at the HL-LHC, a first run of a new generation of 3D detectors designed for the HL-LHC was produced at CNM with small pixel sizes of 50x50 and 25x100 um2, matched to the FE-I4 chip. They demonstrated a good performance in the laboratory and in beam tests with hit efficiencies of about 97% at already 1--2V before irradiation.
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Submitted 16 November, 2016; v1 submitted 24 October, 2016;
originally announced October 2016.
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Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
Authors:
N. Cartiglia,
A. Staiano,
V. Sola,
R. Arcidiacono,
R. Cirio,
F. Cenna,
M. Ferrero,
V. Monaco,
R. Mulargia,
M. Obertino,
F. Ravera,
R. Sacchi,
A. Bellora,
S. Durando,
M. Mandurrino,
N. Minafra,
V. Fadeyev,
P. Freeman,
Z. Galloway,
E. Gkougkousis,
H. Grabas,
B. Gruey,
C. A. Labitan,
R. Losakul,
Z. Luce
, et al. (18 additional authors not shown)
Abstract:
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th…
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In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
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Submitted 3 January, 2017; v1 submitted 30 August, 2016;
originally announced August 2016.
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Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
Authors:
Marta Baselga,
Giulio Pellegrini,
David Quirion
Abstract:
The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations…
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The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large $η$ angles.
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Submitted 28 June, 2016;
originally announced June 2016.
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Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications
Authors:
G. Pellegrini,
M. Baselga,
M. Carulla,
V. Fadeyev,
P. Fernandez-Martinez,
M. Fernandez-Garcia,
D. Flores,
Z. Galloway,
C. Gallrapp,
S. Hidalgo,
Z. Liang,
A. Merlos,
M. Moll,
D. Quirion,
H. Sadrozinski,
M. Stricker,
I. Vila
Abstract:
This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The mult…
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This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the do** profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.
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Submitted 23 November, 2015;
originally announced November 2015.
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Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker
Authors:
Pablo Fernandez-Martinez,
Miguel Ullan,
David Flores,
Salvador Hidalgo,
David Quirion,
David Lynn
Abstract:
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakd…
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This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakdown voltages to meet the specific requirements of the system. In addition, a set of parameter values has been extracted from the simulated curves to implement a SPICE model of the proposed V-JFET transistor. As these devices are expected to operate under very high radiation conditions during the whole experiment life-time, a study of the radiation damage effects and the expected degradation on the device performance is also presented at the end of the paper.
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Submitted 2 November, 2015;
originally announced November 2015.
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Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors
Authors:
Pablo Fernandez-Martinez,
David Flores,
Salvador Hidalgo,
Virginia Greco,
Angel Merlos,
Giulio Pellegrini,
David Quirion
Abstract:
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a carefu…
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Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects when optimising the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.
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Submitted 29 October, 2015;
originally announced October 2015.
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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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First investigation of a novel 2D position-sensitive semiconductor detector concept
Authors:
D. Bassignana,
M. Fernandez,
R. Jaramillo,
M. Lozano,
F. J. Munoz,
G. Pellegrini,
D. Quirion,
I. Vila
Abstract:
This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Ne…
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This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.
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Submitted 3 February, 2012; v1 submitted 27 June, 2011;
originally announced June 2011.
