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Analysis and Applications of a Heralded Electron Source
Authors:
Stewart A. Koppell,
John W. Simonaitis,
Maurice A. R. Krielaart,
William P. Putnam,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We argue the traditional heralding figure of merit, the Klyshko efficiency, is an insufficient statistic for characterizing performance in dose-control and dose-limited applications. Instead, we describe the…
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We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We argue the traditional heralding figure of merit, the Klyshko efficiency, is an insufficient statistic for characterizing performance in dose-control and dose-limited applications. Instead, we describe the sub-Poissonian statistics of the source using the fractional reduction in variance and the fractional increase in Fisher Information. Using these figures of merit, we discuss the engineering requirements for efficient heralding and evaluate potential applications using simple models of electron lithography, bright-field scanning transmission electron microscopy (BFSTEM), and scanning electron microscopy (SEM). We find that the advantage in each of these applications is situational, but potentially significant: dynamic control of the trade-off between write speed and shot noise in electron lithography; an order of magnitude dose reduction in BFSTEM for thin samples (e.g. 2D materials); and a doubling of dose efficiency for wall-steepness estimation in SEM.
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Submitted 26 June, 2024;
originally announced June 2024.
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On-chip sampling of optical fields with attosecond resolution
Authors:
Mina R. Bionta,
Felix Ritzkowsky,
Marco Turchetti,
Yujia Yang,
Dario Cattozzo Mor,
William P. Putnam,
Franz X. Kärtner,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improve…
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Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improvements with regard to molecular sensitivity and limits of detection compared to traditional spectroscopic methods. Despite the many scientific and technological motivations, time-domain, optical-field sampling systems operating in the visible to near-infrared spectral regions are seldom accessible, requiring large driving pulse energies, and large laser amplifier systems, bulky apparatuses, and vacuum environments. Here, we demonstrate an all-on-chip, optoelectronic device capable of sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. Our solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron bursts. These bursts are used to probe the electric field of weak optical transients. We demonstrated our devices by sampling the electric field of a ~5 fJ, broadband near-infrared ultrafast laser pulse using a ~50 pJ near-infrared driving pulse. Our sampling measurements recovered the weak optical transient as well as localized plasmonic dynamics of the emitting nanoantennas $in~situ$. This field-sampling device--with its compact footprint and low pulse-energy requirements--offers opportunities in a variety of applications, including: broadband time-domain spectroscopy in the molecular fingerprint region, time-domain analysis of nonlinear phenomena, and detailed studies of strong-field light-matter interactions.
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Submitted 13 September, 2020;
originally announced September 2020.
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Light Phase Detection with On-Chip Petahertz Electronic Networks
Authors:
Yujia Yang,
Marco Turchetti,
Praful Vasireddy,
William P. Putnam,
Oliver Karnbach,
Alberto Nardi,
Franz X. Kärtner,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Ultrafast light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. These photocurrents can be used to detect the carrier-envelope-phase (CEP) of short optical pulses, and could be utilized to create optical-frequency, petahertz (PHz) electronics for information processing. Despite recent reports on optical-field-driven photocurrents in variou…
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Ultrafast light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. These photocurrents can be used to detect the carrier-envelope-phase (CEP) of short optical pulses, and could be utilized to create optical-frequency, petahertz (PHz) electronics for information processing. Despite recent reports on optical-field-driven photocurrents in various nanoscale solid-state materials, little has been done in examining the large-scale integration of these devices. In this work, we demonstrate enhanced, on-chip CEP detection via optical-field-driven photocurrent in a monolithic array of electrically-connected plasmonic bow-tie nanoantennas that are contained within an area of hundreds of square microns. The technique is scalable and could potentially be used for shot-to-shot CEP tagging applications requiring orders of magnitude less pulse energy compared to alternative ionization-based techniques. Our results open new avenues for compact time-domain, on-chip CEP detection, and inform the development of integrated circuits for PHz electronics as well as integrated platforms for attosecond and strong-field science.
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Submitted 15 December, 2019;
originally announced December 2019.
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Antiresonance-Like Behavior in Carrier-Envelope-Phase-Sensitive Optical-Field Photoemission from Plasmonic Nanoantennas
Authors:
P. D. Keathley,
W. P. Putnam,
P. Vasireddy,
R. G. Hobbs,
Y. Yang,
K. K. Berggren,
F. X. Kaertner
Abstract:
Given the quasi-static nature of optical-field emission and the nontrivial dependence of the emission rate on the instantaneous electric field strength, the CEP-sensitive component of the emitted photocurrent is highly sensitive to the energy of the optical pulse, and should carry information about the underlying sub-cycle dynamics of electron emission. Here we examine CEP-sensitive photoemission…
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Given the quasi-static nature of optical-field emission and the nontrivial dependence of the emission rate on the instantaneous electric field strength, the CEP-sensitive component of the emitted photocurrent is highly sensitive to the energy of the optical pulse, and should carry information about the underlying sub-cycle dynamics of electron emission. Here we examine CEP-sensitive photoemission from plasmonic gold nanoantennas excited with few-cycle optical pulses of increasing energy. We observe antiresonance-like features in the CEP-sensitive photocurrent; specifically, at a critical pulse energy, we observe a sharp dip in the magnitude of the CEP-sensitive photocurrent accompanied by a sudden shift of π-radians in the phase of the photocurrent. Using a quasi-static tunneling emission model, we find that these antiresonance-like features arise due to competition between electron emission from neighboring optical half-cycles, and that they are highly sensitive to the precise shape of the driving optical waveform at the surface of the emitter. As the underlying mechanisms that produce the antiresonance-like features are a general consequence of nonlinear, field-driven photoemission, the antiresonance-like features could be used to probe sub-optical-cycle, sub-femtosecond emission processes, not only from solid-state emitters, but also from gas-phase atoms and molecules. Beyond applications in the study of ultrafast, field-driven electron physics, an understanding of these antiresonance-like features will be critical to the development of novel photocathodes for future time-domain metrology and microscopy applications that demand both attosecond temporal and nanometer spatial resolution.
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Submitted 17 October, 2018;
originally announced October 2018.
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Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures
Authors:
Phillip D. Keathley,
William P. Putnam,
Guillaume Laurent,
Luis F. Velásquez-García,
Franz X. Kärtner
Abstract:
We perform a detailed experimental and theoretical study of the transition from multiphoton to optical-field photoemission from n-doped, single-crystal silicon nanotips. Around this transition, we measure an enhanced emission rate as well as intensity-dependent structure in the photoelectron yield from the illuminated nanostructures. Numerically solving the time-dependent Schrödinger equation (TDS…
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We perform a detailed experimental and theoretical study of the transition from multiphoton to optical-field photoemission from n-doped, single-crystal silicon nanotips. Around this transition, we measure an enhanced emission rate as well as intensity-dependent structure in the photoelectron yield from the illuminated nanostructures. Numerically solving the time-dependent Schrödinger equation (TDSE), we demonstrate that the excess emission derives from the build-up of standing electronic wavepackets near the surface of the silicon, and the intensity dependent structure in this transition results from the increased ponderomotive potential and channel closing effects. By way of time-dependent perturbation theory (TDPT), we then show that the visibility of intensity dependent structure, the transition rate from multiphoton to optical-field emission, and scaling rate at high intensities are all consistent with a narrow band of ground-state energies near the conduction band dominating the emission process in silicon. These results highlight the importance of considering both coherent electron wavepacket dynamics at the emitter surface as well as the ground-state energy distribution when interpreting strong-field photoemission from solids.
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Submitted 17 August, 2017;
originally announced August 2017.
