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Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation
Authors:
Dong Pu,
Muhammad Abid Anwar,
Jiachao Zhou,
Renwei Mao,
Xin Pan,
Jian Chai,
Feng Tian,
Hua Wang,
Huan Hu,
Yang Xu
Abstract:
Graphene-silicon Schottky junction (GSJ) which has the potential for large-scale manufacturing and integration can bring new opportunities to Schottky solar cells for photovoltaic (PV) power conversion. However, the essential power conversion limitation for these devices lies in the small open-circuit voltage ($V_{oc}$), which depends on the Schottky barrier height (SBH). In this study, we introdu…
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Graphene-silicon Schottky junction (GSJ) which has the potential for large-scale manufacturing and integration can bring new opportunities to Schottky solar cells for photovoltaic (PV) power conversion. However, the essential power conversion limitation for these devices lies in the small open-circuit voltage ($V_{oc}$), which depends on the Schottky barrier height (SBH). In this study, we introduce an electromechanical method based on the flexoelectric effect to enhance the PV efficiency in GSJ. By atomic force microscope (AFM) tip-based indentation and in situ current measurement, the current-voltage (I-V) responses under flexoelectric strain gradient are obtained. The $V_{oc}$ is observed to increase for up to 20$\%$, leading to an evident improvement of the power conversion efficiency. Our studies suggest that strain gradient may offer unprecedented opportunities for the development of GSJ based flexo-photovoltaic applications.
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Submitted 9 January, 2023;
originally announced January 2023.
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Charge Crowding in Graphene-Silicon Diodes
Authors:
Muhammad Abid Anwar,
Munir Ali,
Dong Pu,
Srikrishna Chanakya Bodepudi,
Xinyu Zhu,
Xin Pan,
Jianhang Lv,
Khurram Shehzad,
Xiaochen Wang,
Ali Imran,
Yuda Zhao,
Shurong Dong,
Yang Xu,
Bin Yu,
Huan Hu
Abstract:
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic pr…
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The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic properties of graphene-metal contacts, paying particular attention to the nature of the contact failure mechanism under high electrical stress. According to our findings, severe current crowding (CC) effects in highly conductive electrical contact significantly affect device failure that can be reduced by spatially varying the contact properties and geometry. The impact of electrical breakdown on material degradation is systematically analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray spectroscopies. Our devices withstand high electrostatic discharge spikes over a longer period, manifesting high robustness and operational stability. This research paves the way towards a highly robust and reliable graphene/Si heterostructure in futuristic on-chip integration in dynamic switching. The methods we employed here can be extended for other nanoscale electronic devices based on 2D-3D interfaces
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Submitted 7 November, 2022;
originally announced November 2022.
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Ultrasensitive charge detection utilizing coupled nonlinear micromechanical resonators
Authors:
Xuefeng Wang,
Dong Pu,
Ronghua Huan,
Xueyong Wei,
Weiqiu Zhu
Abstract:
Since the discovery of electrons, an accurate detection of electrical charges has been the dream of scientific community. Due to some remarkable advantages, micro/nano-electromechanical systems (M/NEMS) based resonators have been used to design electrometers with exquisite sensitivity and resolution. Inevitably, some limits including requisite ultra-low environmental temperature, complicated reson…
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Since the discovery of electrons, an accurate detection of electrical charges has been the dream of scientific community. Due to some remarkable advantages, micro/nano-electromechanical systems (M/NEMS) based resonators have been used to design electrometers with exquisite sensitivity and resolution. Inevitably, some limits including requisite ultra-low environmental temperature, complicated resonator structure and measurement circuit, required linear dynamic response, will cause a gap with respect to practical application. Here, we demonstrate a novel ultra-sensitive charge detection based on the linear dependence of peak frequency drift on the coupling voltage variation of two coupled nonlinear micromechanical resonators. We achieved ultra-high resolution of 2.051E-3 fC (about 13 electrons) of charge detection at the room temperature. We also show an extra application of this device for weak and ultra-low-frequency (ULF) signal detection. Our findings provide a simple strategy for measuring electron charges in an extreme accuracy and develo** electrometers in smaller sizes.
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Submitted 19 July, 2019;
originally announced July 2019.
