On Determining Dead Layer and Detector Thicknesses for a Position-Sensitive Silicon Detector
Authors:
J. Manfredi,
Jenny Lee,
W. G. Lynch,
C. Y. Niu,
M. B. Tsang,
C. Anderson,
J. Barney,
K. W. Brown,
Z. Chajecki,
K. P. Chan,
G. Chen,
J. Estee,
Z. Li,
C. Pruitt,
A. M. Rogers,
A. Sanetullaev,
H. Setiawan,
R. Showalter,
C. Y. Tsang,
J. R. Winkelbauer,
Z. Xiao,
Z. Xu
Abstract:
In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted f…
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In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a $^{212}$Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.
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Submitted 18 January, 2018;
originally announced January 2018.
