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Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy
Authors:
Tanmoy Pramanik,
Anupam Roy,
Rik Dey,
Amritesh Rai,
Samaresh Guchhait,
Hema CP Movva,
Cheng-Chih Hsieh,
Sanjay K Banerjee
Abstract:
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitativ…
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We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.
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Submitted 8 May, 2017;
originally announced May 2017.
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Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement
Authors:
Urmimala Roy,
Tanmoy Pramanik,
Leonard F. Register,
Sanjay K. Banerjee
Abstract:
Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic th…
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Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic thermal effects. WERs on the scale of 10$^{-9}$ or lower are desired. Within a macrospin approximation, WERs can be calculated analytically using the Fokker-Planck method to this point and beyond. However, dynamic micromagnetic effects within the bit can affect and lead to faster switching. Such micromagnetic effects can be addressed via numerical solution of the stochastic Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. However, determining WERs approaching 10$^{-9}$ would require well over 10$^{9}$ such independent simulations, which is infeasible. In this work, we explore calculation of WER using "rare event enhancement" (REE), an approach that has been used for Monte Carlo simulation of other systems where rare events nevertheless remain important. Using a prototype REE approach tailored to the STT-RAM switching physics, we demonstrate reliable calculation of a WER to 10$^{-9}$ with sets of only approximately 10$^{3}$ ongoing stochastic LLGS simulations, and the apparent ability to go further.
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Submitted 28 March, 2016; v1 submitted 28 March, 2016;
originally announced March 2016.
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Proposal for testing non-locality of single photons in cavities
Authors:
T. Pramanik,
S. Adhikari,
A. S. Majumdar,
D. Home
Abstract:
A scheme is formulated for testing nonlocality of single photons by considering the state of a single photon that could be located within one of two spatially separated cavities. The outcomes of four experiments on this state involving the resonant interactions of two-level atoms with these cavities and a couple of other auxiliary ones is shown to lead to a contradiction with the criterion of loca…
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A scheme is formulated for testing nonlocality of single photons by considering the state of a single photon that could be located within one of two spatially separated cavities. The outcomes of four experiments on this state involving the resonant interactions of two-level atoms with these cavities and a couple of other auxiliary ones is shown to lead to a contradiction with the criterion of locality.
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Submitted 8 November, 2011; v1 submitted 21 June, 2010;
originally announced June 2010.
