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Eu$^{2+}$: a suitable substituent for Pb$^{2+}$ in CsPbX$_3$ perovskite nanocrystals?
Authors:
Firoz Alam,
K. David Wegner,
Stephanie Pouget,
Lucia Amidani,
Kristina Kvashnina,
Dmitry Aldakov,
Peter Reiss
Abstract:
Eu$^{2+}$ is used to replace toxic Pb$^{2+}$ in metal halide perovskite nanocrystals (NCs). The synthesis implies injection of cesium oleate into a solution of europium (II) bromide at an experimentally determined optimum temperature of 130C and a reaction time of 60s. Structural analysis indicates the formation of spherical CsEuBr$_3$ nanoparticles with a mean size of 43nm. Using EuI$_2$ instead…
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Eu$^{2+}$ is used to replace toxic Pb$^{2+}$ in metal halide perovskite nanocrystals (NCs). The synthesis implies injection of cesium oleate into a solution of europium (II) bromide at an experimentally determined optimum temperature of 130C and a reaction time of 60s. Structural analysis indicates the formation of spherical CsEuBr$_3$ nanoparticles with a mean size of 43nm. Using EuI$_2$ instead of EuBr$_2$ leads to the formation of 18nm CsI nanoparticles, while EuCl$_2$ does not show any reaction with cesium oleate forming 80nm EuCl2 nanoparticles. The obtained CsEuBr3 NCs exhibit bright blue emission at 413nm (FWHM 30 nm) with a room temperature photoluminescence quantum yield of 39%. The emission originates from the Laporte-allowed 4f7-4f65d1 transition of Eu$^{2+}$ and shows a PL decay time of 263ns. The long-term stability of the optical properties is observed, making inorganic lead-free CsEuBr$_3$ NCs promising deep blue emitters for optoelectronics.
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Submitted 15 October, 2020;
originally announced October 2020.
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Stratigraphic and sedimentologic framework for tephras in the Wilson Creek Formation, Mono Basin, California, USA
Authors:
Qingyuan Yang,
Marcus Bursik,
Solène Pouget
Abstract:
Numerous tephra layers occur within the late Pleistocene Wilson Creek Formation, where they are interbedded with lacustrine deposits of Lake Russell, the ancestor of present-day Mono Lake. Most of the tephra layers are rhyolitic in composition, and were produced from the Mono Craters. We present detailed stratigraphy and sedimentology of the tephra layers, sampled at twelve outcrops near the shore…
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Numerous tephra layers occur within the late Pleistocene Wilson Creek Formation, where they are interbedded with lacustrine deposits of Lake Russell, the ancestor of present-day Mono Lake. Most of the tephra layers are rhyolitic in composition, and were produced from the Mono Craters. We present detailed stratigraphy and sedimentology of the tephra layers, sampled at twelve outcrops near the shoreline of Mono Lake and the Mono Craters, and implement grain size, componentry, and surface morphology analysis to characterize their physical properties. Sub-unit correlation is proposed for certain tephra units. Noticeable features of the tephras, such as the occurrence of low-density rounded or highly vesicular pumice within certain sub-units, are highlighted. The abundant obsidian, lithics, and ostracods within many sub-units suggest that the associated eruption pulses involved water-magma interaction.
Eruptions from the Mono Craters during the late Pleistocene were consistent neither in frequency nor volume. The Mono Craters were most active during the eruption of tephras in Sequences C ($\sim$42.5-39.4 ka) and A ($\sim$14.1-12.9 ka), and Pleistocene volcanic activity reached its peak during the eruption of tephra layer C11. Detailed interpretation of tephra layer B7 and tephras in Sequence A is given. Tephras in Sequence B ($\sim$26.2-23.1 ka) may have had their vents located in the southern half of the Mono Craters, or are smaller in volume (except for B7), compared to the other tephras in the Wilson Creek Formation. Vents for tephra layers A4, A3, and A1 are located near the northern end of the Mono Craters. The stratigraphy of tephra layers B7 and A1 suggests an unstable depositional environment, which can be used to help constrain the water-level history of Lake Russell during the late Pleistocene.
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Submitted 18 February, 2019; v1 submitted 7 June, 2018;
originally announced June 2018.
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Epitaxial electrical contact to graphene on SiC
Authors:
T. Le Quang,
L. Huder,
F. Lipp Bregolin,
A. Artaud,
H. Okuno,
S. Pouget,
N. Mollard,
G. Lapertot,
A. G. M Jansen,
F. Lefloch,
E. F. C Driessen,
C. Chapelier,
V. T. Renard
Abstract:
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a…
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Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.
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Submitted 11 July, 2017; v1 submitted 17 May, 2017;
originally announced May 2017.
