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Quantitative characterization of amyloid deposits in murine models of alzheimer disease by phase-contrast x-ray imaging
Authors:
A. Politano,
L. Massimi,
N. Pieroni1,
F. Palermo,
A. Sanna,
M. Fratini,
I. Bukreeva,
C. Balducci,
A. Cedola
Abstract:
Alzheimer's is a neurodegenerative disease that is the most common form of dementia, but there is still no definitive cure for this disease. The noninvasive X-ray Phase Contrast Tomography (XPCT) imaging technique was used to study brain tissues in mouse models of Alzheimer's disease, AP-PS1 and APP23. The XPCT technique enabled high-resolution imaging of brain tissues, distinguishing between diff…
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Alzheimer's is a neurodegenerative disease that is the most common form of dementia, but there is still no definitive cure for this disease. The noninvasive X-ray Phase Contrast Tomography (XPCT) imaging technique was used to study brain tissues in mouse models of Alzheimer's disease, AP-PS1 and APP23. The XPCT technique enabled high-resolution imaging of brain tissues, distinguishing between different brain structures, such as amyloid deposits and neuronal cells. In addition, the XPCT technique provided detailed information on the distribution and morphology of amyloid deposits in AP-PS1 and APP23 mice putting in evidence the differences between these two models. This work demonstrates the effectiveness of this technique in supporting Alzheimer's studies and evaluating new therapeutic strategies.
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Submitted 6 June, 2023;
originally announced June 2023.
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Collective plasmonic modes in the chiral multifold fermionic material CoSi
Authors:
Debasis Dutta,
Barun Ghosh,
Bahadur Singh,
Hsin Lin,
Antonio Politano,
Arun Bansil,
Amit Agarwal
Abstract:
Plasmonics in topological semimetals offers exciting opportunities for fundamental physics exploration as well as for technological applications. Here, we investigate plasmons in the exemplar chiral crystal CoSi, which hosts a variety of multifold fermionic excitations. We show that CoSi hosts two distinct plasmon modes in the infrared regime at 0.1 eV and 1.1 eV in the long-wavelength limit. The…
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Plasmonics in topological semimetals offers exciting opportunities for fundamental physics exploration as well as for technological applications. Here, we investigate plasmons in the exemplar chiral crystal CoSi, which hosts a variety of multifold fermionic excitations. We show that CoSi hosts two distinct plasmon modes in the infrared regime at 0.1 eV and 1.1 eV in the long-wavelength limit. The 0.1 eV plasmon is found to be highly dispersive, and originates from intraband collective oscillations associated with a double spin-1 excitation, while the 1.1 eV plasmon is dispersionless and it involves interband correlations. Both plasmon modes lie outside the particle-hole continuum and possess long lifetime. Our study indicates that the CoSi class of materials will provide an interesting materials platform for exploring fundamental and technological aspects of topological plasmonics.
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Submitted 25 February, 2022;
originally announced February 2022.
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Photonic Topological Transitions and Epsilon-Near-Zero Surface Plasmons in Type-II Dirac Semimetal NiTe$_2$
Authors:
Carlo Rizza,
Debasis Dutta,
Barun Ghosh,
Francesca Alessandro,
Chia-Nung Kuo,
Chin Shan Lue,
Lorenzo S. Caputi,
Arun Bansil,
Amit Agarwal,
Antonio Politano,
Anna Cupolillo
Abstract:
Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac sem…
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Compared to artificial metamaterials, where nano-fabrication complexities and finite-size inclusions can hamper the desired electromagnetic response, several natural materials like van der Waals crystals hold great promise for designing efficient nanophotonic devices in the optical range. Here, we investigate the unusual optical response of NiTe$_2$, a van der Waals crystal and a type-II Dirac semimetal hosting Lorentz-violating Dirac fermions. By {\it ab~initio~} density functional theory modeling, we show that NiTe$_2$ harbors multiple topological photonic regimes for evanescent waves (such as surface plasmons) across the near-infrared and optical range. By electron energy-loss experiments, we identify surface plasmon resonances near the photonic topological transition points at the epsilon-near-zero (ENZ) frequencies $\approx 0.79$, $1.64$, and $2.22$ eV. Driven by the extreme crystal anisotropy and the presence of Lorentz-violating Dirac fermions, the experimental evidence of ENZ surface plasmon resonances confirm the non-trivial photonic and electronic topology of NiTe$_2$. Our study paves the way for realizing devices for light manipulation at the deep-subwavelength scales based on electronic and photonic topological physics for nanophotonics, optoelectronics, imaging, and biosensing applications.
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Submitted 5 October, 2021;
originally announced October 2021.
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Optoelectronic devices, plasmonics and photonics with topological insulators
Authors:
Antonio Politano,
Leonardo Viti,
Miriam S. Vitiello
Abstract:
Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge applica…
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Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from Terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications and the challenges of the emerging fields of topological photonics and thermoplasmonics are discussed.
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Submitted 1 April, 2019;
originally announced April 2019.
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Black phosphorus nanodevices at terahertz frequencies: photodetectors and future challenges
Authors:
Leonardo Viti,
Antonio Politano,
Miriam Serena Vitiello
Abstract:
The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its trans…
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The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its transport via electrical gating and direct band-gap, that can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor (FET), a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies.
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Submitted 14 March, 2019;
originally announced March 2019.
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Near-field terahertz probes with room-temperature nanodetectors for subwavelength resolution imaging
Authors:
Oleg Mitrofanov,
Leonardo Viti,
Enrico Dardanis,
Maria Caterina Giordano,
Daniele Ercolani,
Antonio Politano,
Lucia Sorba,
Miriam S. Vitiello
Abstract:
Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally lim…
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Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally limited by the wave nature of light. Here, we conceive a novel architecture that exploits inherently strong evanescent THz field arising within the aperture to mitigate the problem of vanishing transmission. The sub-wavelength aperture is originally coupled to asymmetric electrodes, which activate the thermo-electric THz detection mechanism in a transistor channel made of flakes of black-phosphorus or InAs nanowires. The proposed novel THz near-field probes enable room-temperature sub-wavelength resolution coherent imaging with a 3.4 THz quantum cascade laser, paving the way to compact and versatile THz imaging systems and promising to bridge the gap in spatial resolution from the nanoscale to the diffraction limit.
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Submitted 14 March, 2019;
originally announced March 2019.
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Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes
Authors:
Leonardo Viti,
Antonio Politano,
Kai Zhang,
Miriam Serena Vitiello
Abstract:
Chemical do** of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A…
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Chemical do** of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A room-temperature responsivity of 3 V/W was observed, with a noise-equivalent power of 7 nWHz-1/2 at 3.4 THz, comparable with the state-of-the-art room-temperature photodetectors operating at the same frequency. Therefore, the inclusion of Se dopants in the growth process of black phosphorus crystals enables the optimization of the transport and optical performances of FETs in the far-infrared with a high potential for the development of BP-based electro-optical devices. We also demonstrate that the flake thickness can be tuned according to the target application. Specifically, thicker flakes (>80 nm) are suitable for applications in which high mobility and high speed are essential, thinner flakes (<10 nm) are more appropriate for applications requiring high on/off ratios, while THz photodetection is optimal with flakes 30-40 nm thick, due to the larger carrier density tunability.
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Submitted 6 March, 2019;
originally announced March 2019.
