Showing 1–7 of 7 results for author: Poehlsen, T

Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC

Authors: C. Barth, C. A. Betancourt, I. Bloch, F. Bögelspacher, W. de Boer, M. Daniels, A. Dierlamm, R. Eber, G. Eckerlin, D. Eckstein, T. Eichhorn, J. Erfle, L. Feld, E. Garutti, I. -M. Gregor, M. Guthoff, F. Hartmann, M. Hauser, U. Husemann, K. Jakobs, A. Junkes, W. Karpinski, K. Klein, S. Kuehn, H. Lacker , et al. (16 additional authors not shown)

Abstract: While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an env… ▽ More While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative "Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC" (PETTL), which was supported by the Helmholtz Alliance "Physics at the Terascale" during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R&D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements. △ Less

Submitted 28 April, 2016; originally announced April 2016.

Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

Authors: W. Adam, T. Bergauer, M. Dragicevic, M. Friedl, R. Fruehwirth, M. Hoch, J. Hrubec, M. Krammer, W. Treberspurg, W. Waltenberger, S. Alderweireldt, W. Beaumont, X. Janssen, S. Luyckx, P. Van Mechelen, N. Van Remortel, A. Van Spilbeeck, P. Barria, C. Caillol, B. Clerbaux, G. De Lentdecker, D. Dobur, L. Favart, A. Grebenyuk, Th. Lenzi , et al. (663 additional authors not shown)

Abstract: The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi… ▽ More The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Journal ref: 2016 JINST 11 P04023

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Authors: Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner, Joern Schwandt, Jiaguo Zhang

Abstract: The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses of 660 nm wavelength, which has an absorption length of 3.5 um in silicon at room temperature. The paper describes the measurement and analysis techniques used… ▽ More The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses of 660 nm wavelength, which has an absorption length of 3.5 um in silicon at room temperature. The paper describes the measurement and analysis techniques used to determine the number of electrons and holes collected. Depending on biasing history, humidity and irradiation, incomplete collection of either electrons or holes is observed. The charge losses change with time. The time constants are different for electrons and holes and increase by two orders of magnitude when reducing the relative humidity from about 80 % to less than 1 %. An attempt to interpret these results is presented. △ Less

Submitted 2 May, 2013; originally announced May 2013.

Journal ref: T. Poehlsen, et al., Nuclear Instruments and Methods In Physics Research A (2013)

Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Authors: Thomas Poehlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner, Jörn Schwandt, Jiaguo Zhang

Abstract: Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-SiO2 interface of p+n silicon strip sensors have been measured, and the charge-collection efficiency determined. The laser has been operated in burst mode, with bursts typically spaced by 1 ms, each consisting of 30 puls… ▽ More Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-SiO2 interface of p+n silicon strip sensors have been measured, and the charge-collection efficiency determined. The laser has been operated in burst mode, with bursts typically spaced by 1 ms, each consisting of 30 pulses separated by 50 ns. In a previous paper it has been reported that, depending on X-ray-radiation damage, biasing history and humidity, situations without charge losses, with hole losses, and with electron losses have been observed. In this paper we show for sensors before and after irradiation by X-rays to 1 MGy (SiO2), how the charge losses change with the number of electron-hole pairs generated by each laser pulse, and the time interval between the laser pulses. This allows us to estimate how many additional charges in the accumulation layers at the Si-SiO2 interface have to be trapped to significantly change the local electric field, as well as the time it takes that the accumulation layer and the electric field return to the steady-state situation. In addition, results are presented on the change of the pulse shape caused by the plasma effect for high charge densities deposited close to the Si-SiO2 interface. △ Less

Submitted 25 February, 2013; originally announced February 2013.

Challenges for Silicon Pixel Sensors at the European XFEL

Authors: Robert Klanner, Julian Becker, Eckhart Fretwurst, Ioana Pintilie, Thomas Poehlsen, Jörn Schwandt, Jiaguo Zhang

Abstract: A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigat… ▽ More A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL. △ Less

Submitted 20 December, 2012; originally announced December 2012.

Charge losses in segmented silicon sensors at the Si-SiO2 interface

Authors: Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner, Sergej Schuwalow, Jörn Schwandt, Jiaguo Zhang

Abstract: Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and t… ▽ More Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p+n silicon sensors is discussed. △ Less

Submitted 28 December, 2012; v1 submitted 27 July, 2012; originally announced July 2012.

Journal ref: Nuclear Instruments and Methods in Physics Research A 700 (2013) 22-39

Study of X-ray Radiation Damage in Silicon Sensors

Authors: Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner, Hanno Perrey, Ioana Pintilie, Thomas Poehlsen, Joern Schwandt

Abstract: The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed t… ▽ More The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO2 interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO2 interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements. △ Less

Submitted 4 November, 2011; originally announced November 2011.