Showing 1–13 of 13 results for author: Pintilie, I

Impact of interface defects on the band alignment and performance of TiO$_2$/MAPI/Cu$_2$O perovskite solar cells

Authors: Nicolae Filipoiu, Marina Cuzminschi, Calin-Andrei Pantis-Simut, Kristinn Torfason, Rachel Elizabeth Brophy, Andrei Manolescu, Roxana E. Patru, Cristina Besleaga, George E. Stan, Ioana Pintilie, George Alexandru Nemnes

Abstract: Optimizing the interfaces in perovskite solar cells (PSCs) is essential for enhancing their performance, improving their stability, and making them commercially viable for large-scale deployment in solar energy harvesting applications. Point defects, like vacancies, have a dual role, as they can inherently provide a proper do**, but they can also reduce the collected current by trap-assisted rec… ▽ More Optimizing the interfaces in perovskite solar cells (PSCs) is essential for enhancing their performance, improving their stability, and making them commercially viable for large-scale deployment in solar energy harvesting applications. Point defects, like vacancies, have a dual role, as they can inherently provide a proper do**, but they can also reduce the collected current by trap-assisted recombination. Moreover, they can play an active role in ion migration. Using {\it ab initio} density functional theory (DFT) calculations we investigate the changes in the band alignment induced by interfacial vacancy defects in a TiO$_2$/MAPI/Cu$_2$O based PSC. Depending on the type of the vacancy (Ti, Cu, O, Pb, I) in the oxide and perovskite materials, additional do** is superimposed on the already existing background. Their effect on the performance of the PSCs becomes visible, as shown by SCAPS simulations. The most significant impact is observed for $p$ type do** of TiO$_2$ and $n$ type do** of Cu$_2$O, while the effective do** of the perovskite layer affects one of the two interfaces. We discuss these results based on modification of the band structure near the active interfaces and provide further insights concerning the optimization of electron and hole collection. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Comments: 7 pages, 8 figures, 4 sections, 44 references

Electron transporting bilayers for perovskite solar cells: spray coating deposition of c-TiO2/m-SnO2-quantum dots

Authors: Anca G. Mirea, Ioana D. Vlaicu, Sarah Derbali, Florentina Neatu, Andrei G. Tomulescu, Cristina Besleaga, Monica Enculescu, Andrei C. Kuncser, Alexandra C. Iacoban, Nicolae Filipoiu, Marina Cuzminschi, George A. Nemnes, Andrei Manolescu, Mihaela Florea, Ioana Pintilie

Abstract: Herein we present a comparative study among different mesoporous electron transporter layers (ETLs), namely nanometric m-TiO2, m-SnO2 and m-SnO2 quantum dots (QDs), deposited by spray coating method. The experimental data correlated with the photovoltaic parameters indicate that the SnO2 mesoporous layer obtained from the spray deposition of the in-house prepared QDs solution is the best candidate… ▽ More Herein we present a comparative study among different mesoporous electron transporter layers (ETLs), namely nanometric m-TiO2, m-SnO2 and m-SnO2 quantum dots (QDs), deposited by spray coating method. The experimental data correlated with the photovoltaic parameters indicate that the SnO2 mesoporous layer obtained from the spray deposition of the in-house prepared QDs solution is the best candidate between the three used mesoporous ETLs. The use of the in-house prepared SnO2 QDs solution presents smaller agglomerates composed of 3 nm NPs resulting in the formation of a thinner, more uniform, and compact mesoporous ETL, compared with the other two ETL solutions. The formamidinium-methylamonium-potassium (FAMA@10K) perovskite deposited on this m-SnO2 QDs ETL presents a lower RMS, more uniformity and, a higher amount of PbI2. Interestingly, this higher concentration for PbI2 seems to enhance the performance of the perovskite solar cells (PSC), compared to the other two mesoporous ETLs. Our work reveals that SnO2 QDs solution can be easily produced in the laboratory and it is more suited for the deposition of the mesoporous ETL when choosing a FAMA@10K configuration perovskite solar cell with power conversion efficiency (PCE) higher than 10%. △ Less

Submitted 1 July, 2024; v1 submitted 26 June, 2024; originally announced June 2024.

Comments: 20 pages, 14 figures, 6 sections

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

Authors: Chuan Liao, Eckhart Fretwurst, Erika Garutti, Joern Schwandt, Ioana Pintilie, Anja Himmerlich, Michael Moll, Yana Gurimskaya, Zheng Li

Abstract: In this work, the effects of $^\text{60}$Co $γ$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) and microscopic (Thermally Stimulated Current~(TSC)) measurements were conducted to characterize the radiation-induced changes. The investigated diodes were manu… ▽ More In this work, the effects of $^\text{60}$Co $γ$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) and microscopic (Thermally Stimulated Current~(TSC)) measurements were conducted to characterize the radiation-induced changes. The investigated diodes were manufactured on high resistivity $p$-type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: $p$-stop and $p$-spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation-induced defects, including the boron interstitial and oxygen interstitial (B$_\text{i}$O$_\text{i}$) complex, the carbon interstitial and oxygen interstitial C$_\text{i}$O$_\text{i}$ defect, the H40K, and the so-called I$_\text{P}^*$. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of \SI{80}{\celsius} to \SI{300}{\celsius}. These annealing processes were carried out on diodes irradiated with doses of 1 and \SI{2}{\mega Gy} and the corresponding TSC spectra were analysed. Furthermore, in order to investigate the unexpected results observed in the $C$-$V$ measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature. △ Less

Submitted 27 June, 2023; originally announced June 2023.

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

Authors: Chuan Liao, Eckhart Fretwurst, Erika Garutti, Joern Schwandt, Leonid Makarenko, Ioana Pintilie, Lucian Dragos Filip, Anja Himmerlich, Michael Moll, Yana Gurimskaya, Zheng Li

Abstract: This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$Ω\cdot$cm… ▽ More This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$Ω\cdot$cm were irradiated with fluence values between \SI{1e15}{\per\square\centi\meter} and \SI{6e15}{\per\square\centi\meter}. Such diodes cannot be fully depleted and thus the accurate evaluation of defect concentrations and properties (activation energy, capture cross-section, concentration) from Thermally Stimulated Currents (TSC) experiments alone is not possible. In this study we demonstrate that by performing Thermally Stimulated Capacitance (TS-Cap) experiments in similar conditions to TSC measurements and develo** theoretical models for simulating both types of B$_\text{i}$O$_\text{i}$ signals generated in TSC and TS-Cap measurements, accurate evaluations can be performed. The changes of the position-dependent electric field, the effective space charge density $N_\text{eff}$ profile as well as the occupation of the B$_\text{i}$O$_\text{i}$ defect during the electric field dependent electron emission, are simulated as a function of temperature. The macroscopic properties (leakage current and $N_\text{eff}$) extracted from current-voltage and capacitance-voltage measurements at \SI{20}{\celsius} are also presented and discussed △ Less

Submitted 26 June, 2023; originally announced June 2023.

Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors

Authors: Anja Himmerlich, Nuria Castello-Mor, Esteban Curras Rivera, Yana Gurimskaya, Vendula Maulerova-Subert, Michael Moll, Ioana Pintilie, Eckhart Fretwurst, Chuan Liao, Jorn Schwandt

Abstract: High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect… ▽ More High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. In this paper we present defect-spectroscopy measurements (Deep-Level Transient Spectroscopy and Thermally Stimulated Current technique) on neutron irradiated p-type silicon pad diodes of different resistivity as well as LGADs irradiated at fluences up to 1 x 10^15 neq/cm2. Thereby we show that while for the silicon pad diodes irradiated with electrons, neutrons or protons the determination of defect electronic properties and defect introduction rates is straightforward, DLTS and TSC measurements on LGADs are strongly influenced by the impact of the gain layer. It is shown that the measurability of the capacitance of the gain layer shows a strong frequency and temperature dependence leading to a capacitance drop in DLTS and non-reliable measurement results. With TSC defects formed in the LGADs can be very nicely observed and compared to the defects formed in the silicon pad diodes. However the exact assignment of defects to the gain layer or bulk region remains challenging and the charge amplification effect of the LGADs impacts the exact determination of defect concentrations. Additionally, we will demonstrate that depending on the TSC measurement conditions defect induced residual internal electric fields are built up in the irradiated LGADs that are influencing the current signal of carriers emitted from the defect states. △ Less

Submitted 15 September, 2022; originally announced September 2022.

The hysteresis-free behavior of perovskite solar cells from the perspective of the measurement conditions

Authors: George Alexandru Nemnes, Cristina Besleaga, Andrei Gabriel Tomulescu, Lucia Nicoleta Leonat, Viorica Stancu, Mihaela Florea, Andrei Manolescu, Ioana Pintilie

Abstract: We investigate in how far the hysteresis-free behavior of perovskite solar cells can be reproduced using particular pre-conditioning and measurement conditions. As there are currently more and more reports of perovskite solar cells without J-V hysteresis it is crucial to distinguish between genuine performance improvements and measurement artifacts. We focus on two of the parameters that influence… ▽ More We investigate in how far the hysteresis-free behavior of perovskite solar cells can be reproduced using particular pre-conditioning and measurement conditions. As there are currently more and more reports of perovskite solar cells without J-V hysteresis it is crucial to distinguish between genuine performance improvements and measurement artifacts. We focus on two of the parameters that influence the dynamic J-V scans, namely the bias scan rate and and the bias poling voltage, and point out measurement conditions for achieving a hysteresis-free behavior. In this context we discuss the suitability of defining a hysteresis index (HI) for the characterization of dynamic J-V scans. Using HI, aging effects are also investigated, establishing a potential connection between the sample degradation and the variation of the maximal hysteresis on one hand, and relaxation time scale of the slow process, on the other hand. Pre-poling induced recombinations effects are identified. In addition, our analysis based on sample pre-biasing reveals potential indication regarding two types of slow processes, with two different relaxation time scales, which provides further insight regarding ionic migration. △ Less

Submitted 21 February, 2019; v1 submitted 10 December, 2018; originally announced December 2018.

Comments: 11 pages, 11 figures

Journal ref: Journal of Materials Chemistry C 2019

Study of point- and cluster-defects in radiation-damaged silicon

Authors: Elena M. Donegani, Eckhart Fretwurst, Erika Garutti, Robert Klanner, Gunnar Lindstroem, Ioana Pintilie, Roxana Radu, Joern Schwandt

Abstract: Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few $10^{14}$ cm$^{-2}$ and energies between 3.5 and 27 MeV for isochronal annealing betwe… ▽ More Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few $10^{14}$ cm$^{-2}$ and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280°C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occupied traps. The dfference of ionisation energy of an isolated point defect and a fully occupied cluster, $ΔE_a$, is extracted from the TSC data. For the VOi (vacancy-oxygen interstitial) defect $ΔE_a = 0$ is found, which cofirms that it is a point defect, and validates the method for point defects. For clusters made of deep acceptors the $ΔE_a$ values for different defects are determined after annealing at 80°C as a function of electron energy, and for the irradiation with 15 MeV electrons as a function of annealing temperature. For the irradiation with 3.5 MeV electrons the value $ΔE_a = 0$ is found, whereas for the electron energies of 6 to 27 MeV $ΔE_a > 0$. This agrees with the expected threshold of about 5 MeV for cluster formation by electrons. The $ΔE_a$ values determined as a function of annealing temperature show that the annealing rate is different for different defects. A naive diffusion model is used to estimate the temperature dependencies of the diffusion of the defects in the clusters. △ Less

Submitted 19 March, 2018; originally announced March 2018.

Comments: 13 pages, 12 figures, 4 tables

Challenges for Silicon Pixel Sensors at the European XFEL

Authors: Robert Klanner, Julian Becker, Eckhart Fretwurst, Ioana Pintilie, Thomas Poehlsen, Jörn Schwandt, Jiaguo Zhang

Abstract: A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigat… ▽ More A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL. △ Less

Submitted 20 December, 2012; originally announced December 2012.

Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL

Authors: Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner, Ioana Pintilie, Joern Schwandt, Monica Turcato

Abstract: Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations <100> and <111> produced by two vendors, CiS and Hamamatsu, have been irradiated w… ▽ More Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations <100> and <111> produced by two vendors, CiS and Hamamatsu, have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron light source. Using capacitance/conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the surface densities of oxide charges and interface traps at the Si-SiO2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the surface density of oxide charges and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the surface density of oxide charges and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO2 to the Si-SiO2 interface. Finally, annealing studies have been performed at 60 and 80 degree C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy and the annealing kinetics of oxide charges and surface current determined. △ Less

Submitted 9 November, 2012; v1 submitted 1 October, 2012; originally announced October 2012.

Comments: 10 pages, 6 figures, 3 tables

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Authors: J. Schwandt, E. Fretwurst, R. Klanner, I. Pintilie, J. Zhang

Abstract: The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists… ▽ More The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists of a pixel array with readout ASICs bump-bonded to a silicon sensor with pixels of 200 μm \times 200 μm. The particular requirements for the detector are a high dynamic range (0, 1 up to 10E5 12 keV photons/XFEL-pulse), a fast read-out and radiation tolerance up to doses of 1 GGy of 12 keV X-rays for 3 years of operation. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the SiO2 layer and interface traps at the Si-SiO2 interface will build up. As function of the 12 keV X-ray dose the microscopic defects in test structures and the macro- scopic electrical properties of segmented sensors have been investigated. From the test structures the oxide charge density, the density of interface traps and their properties as function of dose have been determined. It is found that both saturate (and even decrease) for doses above a few MGy. For segmented sensors surface damage introduced by the X-rays increases the full depletion voltage, the surface leakage current and the inter-pixel capacitance. In addition an electron accumulation layer forms at the Si-SiO2 interface which increases with dose and decreases with applied voltage. Using TCAD simulations with the dose dependent damage parameters obtained from the test struc- tures the results of the measurements can be reproduced. This allows the optimization of the sensor design for the XFEL requirements. △ Less

Submitted 21 November, 2011; originally announced November 2011.

Study of X-ray Radiation Damage in Silicon Sensors

Authors: Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner, Hanno Perrey, Ioana Pintilie, Thomas Poehlsen, Joern Schwandt

Abstract: The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed t… ▽ More The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO2 interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO2 interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements. △ Less

Submitted 4 November, 2011; originally announced November 2011.

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Authors: Jiaguo Zhang, Ioana Pintilie, Eckhart Fretwurst, Robert Klanner, Hanno Perrey, Joern Schwandt

Abstract: Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiat… ▽ More Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO_2 layer and of the Si-SiO_2 interface using MOS capacitors manufactured on high resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, have been studied. Measurements of Capacitance/Conductance-Voltage (C/G-V) at different frequencies, as well as Thermal Dielectric Relaxation Current (TDRC) have been performed. The data can be described by a radiation dependent oxide charge density and three dominant radiation-induced interface states with Gaussian-like energy distributions in the silicon band gap. It is found that the densities of the fixed oxide charges and of the three interface states increase up to dose values of approximately 10 MGy and then saturate or even decrease. The shapes and the frequency dependences of the C/G-V measurements can be quantitatively described by a simple model using the parameters extracted from the TDRC measurements. △ Less

Submitted 10 January, 2012; v1 submitted 29 July, 2011; originally announced July 2011.

Comments: 14 pages and 7 figures

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

Authors: E. Fretwurst, G. Lindstrom, I. Pintilie, J. Stahl

Abstract: The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are… ▽ More The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage including also defects introduced either by processing steps or being inherent to the as grown silicon. However the focus is on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work. △ Less

Submitted 4 December, 2002; v1 submitted 28 November, 2002; originally announced November 2002.

Comments: 35 pages, 41 figures, To be published in Nuclear Instruments and Methods A

Report number: DESY 02-199