Investigation of the burst phenomenon in SiPMs at liquid nitrogen temperature
Authors:
Marco Guarise,
Mirco Andreotti,
Anna Balboni,
Roberto Calabrese,
Denise Casazza,
Angelo Cotta Ramusino,
Annalea Corallo,
Stefano Chiozzi,
Riccardo D'Amico,
Massimiliano Fiorini,
Tommaso Giammaria,
Eleonora Luppi,
Lorenzo Pierini,
Luca Tomassetti
Abstract:
Burst effect of Silicon Photomultiplier (SiPM) at cryogenic temperatures have been discovered few years ago looking at the dark count rate of SiPMs at liquid nitrogen temperatures. Bursts are trains of single signals that happen randomly and are clearly distinguishable from the primary DCR and correlated noise because of their particular time distribution. In this article we describe a detailed st…
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Burst effect of Silicon Photomultiplier (SiPM) at cryogenic temperatures have been discovered few years ago looking at the dark count rate of SiPMs at liquid nitrogen temperatures. Bursts are trains of single signals that happen randomly and are clearly distinguishable from the primary DCR and correlated noise because of their particular time distribution. In this article we describe a detailed study related to both the external causes that triggers bursts and to the phenomenon, internal to the sensor, that produces this dark signals. We related the burst occurrence to the luminescence produced by some trap** centers in the SiPMs when they are excited by ionizing radiation that im**es on the sensor.
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Submitted 24 May, 2024;
originally announced May 2024.
