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Purcell-Enhanced Single-Photon Emission in the Telecom C-Band
Authors:
Jochen Kaupp,
Yorick Reum,
Felix Kohr,
Johannes Michl,
Quirin Buchinger,
Adriana Wolf,
Giora Peniakov,
Tobias Huber-Loyola,
Andreas Pfenning,
Sven Höfling
Abstract:
Purcell-enhanced quantum dot single-photon emission in the telecom C-band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are embedded into a quaternary $\mathrm{In}_{0.53}\mathrm{Al}_{0.23}\mathrm{Ga}_{0.24}\mathrm{As}$ membrane structure. In a post-growth flip-chip process with subs…
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Purcell-enhanced quantum dot single-photon emission in the telecom C-band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are embedded into a quaternary $\mathrm{In}_{0.53}\mathrm{Al}_{0.23}\mathrm{Ga}_{0.24}\mathrm{As}$ membrane structure. In a post-growth flip-chip process with subsequent substrate removal and electron beam-lithography, circular Bragg grating ("bullseye") resonators are defined. Micro-photoluminescence studies of the devices at cryogenic temperatures of T = 5 K reveal individual quantum dot emission lines into a pronounced cavity mode. Time-correlated single-photon counting measurements under above-band gap excitation yield Purcell-enhanced excitonic decay times of $τ= (180 \pm 3)$ ps corresponding to a Purcell factor of $F_P = (6.7 \pm 0.6)$. Pronounced photon antibunching with a background limited $g^{(2)}(0) = (0.057 \pm 0.004)$ is observed, which demonstrates that the light originated mostly from one single quantum dot.
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Submitted 3 November, 2023;
originally announced November 2023.
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Polarized and Un-Polarized Emission from a Single Emitter in a Bullseye Resonator
Authors:
Giora Peniakov,
Quirin Buchinger,
Mohamed Helal,
Simon Betzold,
Yorick Reum,
Michele B. Rota,
Giuseppe Ronco,
Mattia Beccaceci,
Tobias M. Krieger,
Saimon F. Covre Da Silva,
Armando Rastelli,
Rinaldo Trotta,
Andreas Pfenning,
Sven Hoefling,
Tobias Huber-Loyola
Abstract:
We present polarized |S|=0.99$\pm$0.01, and unpolarized |S|=0.03$\pm$0.01 emission from a single emitter embedded in a single, cylindrically symmetric device design. We show that the polarization stems from a position offset of the single emitter with respect to the cavity center, which breaks the cylindrical symmetry, and a position-dependent coupling to the frequency degenerate eigenmodes of the…
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We present polarized |S|=0.99$\pm$0.01, and unpolarized |S|=0.03$\pm$0.01 emission from a single emitter embedded in a single, cylindrically symmetric device design. We show that the polarization stems from a position offset of the single emitter with respect to the cavity center, which breaks the cylindrical symmetry, and a position-dependent coupling to the frequency degenerate eigenmodes of the resonator structure. The experimental results are interpreted by using numerical simulations and by experimental map** of the polarization-resolved far-field emission patterns. Our findings can be generalized to any nanophotonic structure where two orthogonal eigenmodes are not fully spatially overlap**.
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Submitted 5 October, 2023; v1 submitted 11 August, 2023;
originally announced August 2023.
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Strain-free GaSb quantum dots as single-photon sources in the telecom S-band
Authors:
Johannes Michl,
Giora Peniakov,
Andreas Pfenning,
Joonas Hilska,
Abhiroop Chellu,
Andreas Bader,
Mircea Guina,
Sven Höfling,
Teemu Hakkarainen,
Tobias Huber-Loyola
Abstract:
Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with a…
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Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with an indirect to direct bandgap crossover in the telecom wavelength range. Here, we investigate the (quantum-) optical properties of GaSb quantum dots, which are fabricated by filling droplet-etched nanoholes in an aluminum-galliumantimonide (AlGaSb) matrix. We observe photoluminescence (PL) features from isolated and highly symmetric QDs that exhibit narrow linewidth in the telecom S-band and show an excitonic fine structure splitting of $ΔE=(12.0\pm0.5)μeV$. Moreover, we perform time-resolved measurements of the decay characteristics of an exciton and measure the second-order photon autocorrelation function of the charge complex to $g^{(2)}(0)=0.16\pm0.02$, revealing clear antibunching and thus proving the capability of this material platform to generate non-classical light.
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Submitted 7 May, 2023;
originally announced May 2023.
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Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes
Authors:
E. R. Cardozo de Oliveira,
A. Naranjo,
A. Pfenning,
V. Lopez-Richard,
G. E. Marques,
L. Worschech,
F. Hartmann,
S. Höfling,
M. D. Teodoro
Abstract:
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splittin…
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We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy techniques provide useful insights on the charge carrier dynamics in resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques. This approach will drive the way for develo** potentially more efficient opto-electronic resonant tunneling devices, by e.g., monitoring voltage dependent charge accumulation for improving built-in fields and hence to maximize photodetector efficiency and/or minimize optical losses.
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Submitted 29 December, 2020; v1 submitted 22 July, 2020;
originally announced July 2020.
