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Controlling light emission by engineering atomic geometries in silicon photonics
Authors:
Arindam Nandi,
Xiaodong Jiang,
Dongmin Pak,
Daniel Perry,
Kyunghun Han,
Edward S Bielejec,
Yi Xuan,
Mahdi Hosseini
Abstract:
By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of…
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By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of light emission to the atomic positions and lattice spacing and also observe Fano interference between resonant modes in the system.
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Submitted 12 March, 2020; v1 submitted 24 February, 2019;
originally announced February 2019.
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Ion Implantation for Deterministic Single Atom Devices
Authors:
J. L. Pacheco,
M. Singh,
D. L. Perry,
J. R. Wendt,
G. Ten Eyck,
R. P. Manginell,
T. Pluym,
D. R. Luhman,
M. P. Lilly,
M. S. Carroll,
E. Bielejec
Abstract:
We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device…
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We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
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Submitted 2 November, 2017;
originally announced November 2017.
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Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
Authors:
J. L. Pacheco,
D. L. Perry,
D. R. Hughart,
M. Marinella,
E. Bielejec
Abstract:
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a C…
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We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.
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Submitted 25 October, 2017;
originally announced October 2017.
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A bright nanowire single photon source based on SiV centers in diamond
Authors:
L. Marseglia,
K. Saha,
A. Ajoy,
T. Schröder,
D. Englund,
F. Jelezko,
R. Walsworth,
J. L. Pacheco,
D. L. Perry,
E. S. Bielejec,
P. Cappellaro
Abstract:
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon…
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The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.
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Submitted 18 August, 2017;
originally announced August 2017.
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A New Approach toward Transition State Spectroscopy
Authors:
Kirill Prozument,
Rachel Glyn Shaver,
Monika A. Ciuba,
John S. Muenter,
G. Barratt Park,
John F. Stanton,
Hua Guo,
Bryan M. Wong,
David S. Perry,
Robert W. Field
Abstract:
Chirped-Pulse millimetre-Wave (CPmmW) rotational spectroscopy provides a new class of information about photolysis transition state(s). Measured intensities in rotational spectra determine species-isomer-vibrational populations, provided that rotational populations can be thermalized. The formation and detection of S0 vinylidene is discussed in the limits of low and high initial rotational excitat…
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Chirped-Pulse millimetre-Wave (CPmmW) rotational spectroscopy provides a new class of information about photolysis transition state(s). Measured intensities in rotational spectra determine species-isomer-vibrational populations, provided that rotational populations can be thermalized. The formation and detection of S0 vinylidene is discussed in the limits of low and high initial rotational excitation. CPmmW spectra of 193 nm photolysis of Vinyl Cyanide (Acrylonitrile) contain J=0-1 transitions in more than 20 vibrational levels of HCN, HNC, but no transitions in vinylidene or highly excited local-bender vibrational levels of acetylene. Reasons for the non-observation of the vinylidene co-product of HCN are discussed.
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Submitted 22 December, 2013;
originally announced December 2013.
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Modeling Agglomeration of Dust Particles in Plasma
Authors:
Lorin S. Matthews,
Victor Land,
Qianyu Ma,
Jonathan D. Perry,
Truell W. Hyde
Abstract:
The charge on an aggregate immersed in a plasma environment distributes itself over the aggregate's surface; this can be approximated theoretically by assuming a multipole distribution. The dipole-dipole (or higher order) charge interactions between fractal aggregates lead to rotations of the grains as they interact. Other properties of the dust grains also influence the agglomeration process, suc…
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The charge on an aggregate immersed in a plasma environment distributes itself over the aggregate's surface; this can be approximated theoretically by assuming a multipole distribution. The dipole-dipole (or higher order) charge interactions between fractal aggregates lead to rotations of the grains as they interact. Other properties of the dust grains also influence the agglomeration process, such as the monomer shape (spherical or ellipsoidal) or the presence of magnetic material. Finally, the plasma and grain properties also determine the morphology of the resultant aggregates. Porous and fluffy aggregates are more strongly coupled to the gas, leading to reduced collisional velocities, and greater collisional cross sections. These factors in turn can determine the growth rate of the aggregates and evolution of the dust cloud. This paper gives an overview of the numerical and experimental methods used to study dust agglomeration at CASPER and highlights some recent results.
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Submitted 31 October, 2011;
originally announced November 2011.
