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Reconfigurable non-reciprocal wave growth in spatiotemporal modulated 1-D crystal
Authors:
Mohamed F. Hagag,
Thomas R. Jones,
Karim Seddik,
Dimitrios Peroulis
Abstract:
Nonreciprocity in space-time modulated photonic crystals has been investigated in the context of nonreciprocal propagation and polarization. Here, we investigate a reconfigurable nonreciprocal wave growth in space-time modulated crystals. Imposing an adaptable progressive phase shift between successive time-modulated cells results in blue and red shifts of the forward and backward momentum band ga…
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Nonreciprocity in space-time modulated photonic crystals has been investigated in the context of nonreciprocal propagation and polarization. Here, we investigate a reconfigurable nonreciprocal wave growth in space-time modulated crystals. Imposing an adaptable progressive phase shift between successive time-modulated cells results in blue and red shifts of the forward and backward momentum band gaps around the typical 0.5 growth normalized frequency. We applied this spatiotemporal scheme to engineering the dispersion relation of a loaded transmission line$-$a 1D periodic structure$-$in the microwave regime.
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Submitted 5 November, 2023; v1 submitted 25 October, 2023;
originally announced October 2023.
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Signal Amplification in a Time-Modulated Transmission Line and the Loss Effect
Authors:
Mohamed Hagag,
Thomas Robert Jones,
Karim Seddik,
Dimitrios Peroulis
Abstract:
We investigate and simulate signal amplification in a transmission line (TL) with time-modulated characteristic impedance Zo. Periodically varying $Z_o$ is achieved by loading TL with a sinusoidally time-modulated capacitor (TMC). For a detailed study, three models are considered: a lossless L-C TL lumped model loaded with shunt infinite quality factor (Q) TMC, a TL loaded with a shunt infinite Q…
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We investigate and simulate signal amplification in a transmission line (TL) with time-modulated characteristic impedance Zo. Periodically varying $Z_o$ is achieved by loading TL with a sinusoidally time-modulated capacitor (TMC). For a detailed study, three models are considered: a lossless L-C TL lumped model loaded with shunt infinite quality factor (Q) TMC, a TL loaded with a shunt infinite Q TMC, and finite Q TMC. By solving the eigenvalue problem in all models, dispersion diagrams (DD) are plotted with a created momentum band gap (MBG) at a modulation frequency double the signal frequency. Within MBG, only imaginary frequencies are found and correlated to MBG width and signal growth level. Using Harmonics Balance (HB) and Transient Simulation (TS), signal amplification is confirmed, and the obtained results are consistent with the DD outcomes. In the second model, the effect of TL length on amplification is investigated and explained by studying the unit cell's Bloch impedance. The loss effect is considered by adding a series resistance (Rc) to the third model's TMC (finite Q). Decreasing amplification levels, confirmed by circuit modeling, due to the increase of Rc value is explained by studying real and imaginary DDs and the attenuation constant.
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Submitted 3 November, 2023; v1 submitted 29 August, 2023;
originally announced October 2023.
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Time-Reflection of Microwaves by a Fast Optically-Controlled Time-Boundary
Authors:
Thomas R. Jones,
Alexander V. Kildishev,
Mordechai Segev,
Dimitrios Peroulis
Abstract:
When an electromagnetic (EM) wave is propagating in a medium whose properties are varied abruptly in time, the wave experiences refractions and reflections known as "time-refractions" and "time-reflections", both manifesting spectral translation as a consequence of the abrupt change of the medium and the conservation of momentum. However, while the time-refracted wave continues to propagate with t…
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When an electromagnetic (EM) wave is propagating in a medium whose properties are varied abruptly in time, the wave experiences refractions and reflections known as "time-refractions" and "time-reflections", both manifesting spectral translation as a consequence of the abrupt change of the medium and the conservation of momentum. However, while the time-refracted wave continues to propagate with the same wave-vector, the time-reflected wave is propagating backward with a conjugate phase, despite the lack of any spatial interface. Importantly, while time-refraction is always significant, observing time-reflection poses a major challenge - because it requires a large change in the medium occurring within a single cycle. For that reason, time-reflection of EM waves was observed only recently. Here, we present the observation of microwave pulses at the highest frequency ever observed (0.59 GHz), and the experimental evidence of the phase-conjugation nature of time-reflected waves. Our experiments are carried out in a periodically-loaded microstrip line with optically-controlled picosecond-switchable photodiodes. Our system paves the way to the experimental realization of Photonic Time-Crystals at GHz frequencies.
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Submitted 3 October, 2023;
originally announced October 2023.
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A Low-Loss 1-4 GHz Optically-Controlled Silicon Plasma Switch
Authors:
Alden Fisher,
Zach Vander Missen,
Abbas Semnani,
Dimitrios Peroulis
Abstract:
This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than 20 dB across the band. The measured OFF-state isolation ranges from 27 dB at 1 GHz to 17 dB at 4 GHz. The switch comprises a single silicon chiplet excited by a…
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This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than 20 dB across the band. The measured OFF-state isolation ranges from 27 dB at 1 GHz to 17 dB at 4 GHz. The switch comprises a single silicon chiplet excited by a 915-nm laser fiber which creates electron-hole pairs, thereby exciting the ON-state silicon plasma. An optical fiber is guided through the bottom of the RF substrate to illuminate the chiplet, which bridges a 1.075-mm microstrip line gap. To the best of our knowledge, this is the lowest-loss silicon plasma switch demonstrated today.
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Submitted 20 July, 2021; v1 submitted 14 December, 2020;
originally announced December 2020.
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Plasma Switch-Based Technology for High-Speed and High-Power Impedance Tuning
Authors:
Zach Vander Missen,
Sergey Macheret,
Abbas Semnani,
Dimitrios Peroulis
Abstract:
This paper introduces a new technology for a high-speed, high-power mobile form-factor tuner utilizing gas discharge tube plasma cells as switching components. To the best of our knowledge, this represents the first plasma-enabled RF matching network. Technology development is reviewed, the fabrication and measurement of a proof-of-concept switched stub impedance tuner are presented, and technique…
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This paper introduces a new technology for a high-speed, high-power mobile form-factor tuner utilizing gas discharge tube plasma cells as switching components. To the best of our knowledge, this represents the first plasma-enabled RF matching network. Technology development is reviewed, the fabrication and measurement of a proof-of-concept switched stub impedance tuner are presented, and techniques for improvement are discussed. The proof-of-concept impedance tuner functions with a 27% bandwidth from 3 to almost 4 GHz and shows a power gain better than -2.5 dB across all switching state-frequency combinations at a 50 W input power level with spread coverage of the Smith chart. State change transient timing is measured to be on the order of 500 ns. This technology demonstration highlights the potential of miniaturized, rapidly-tunable, high-power, plasma-based RF devices.
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Submitted 19 July, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Cost-Effective Methods to Nanopattern Thermally Stable Platforms on Kapton HN Flexible Films Using Inkjet Printing Technology to Produce Printable Nitrate Sensors, Mercury Aptasensors, Protein Sensors, and Organic Thin Film Transistors
Authors:
Li Kai Lin,
Jung Ting Tsai,
Susana Diaz Amaya,
Muhammed R Oduncu,
Yifan Zhang,
Peng Yuan Huang,
Carlos Ostos,
Jacob P Schmelzel,
Raheleh Mohammadrahimi,
Pengyu Xu,
Nithin Raghunathan,
Xinghang Zhang,
Alexander Wei,
David Bahr,
Dimitrios Peroulis,
Lia A Stanciu
Abstract:
Kapton HN films, adopted worldwide due to their superior thermal durability (up to 400 °C), allow the high temperature sintering of nanoparticle based metal inks. By carefully selecting inks and Kapton substrates, outstanding thermal stability and anti-delaminating features are obtained in both aqueous and organic solutions and were applied to four novel devices: a solid state ion selective nitrat…
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Kapton HN films, adopted worldwide due to their superior thermal durability (up to 400 °C), allow the high temperature sintering of nanoparticle based metal inks. By carefully selecting inks and Kapton substrates, outstanding thermal stability and anti-delaminating features are obtained in both aqueous and organic solutions and were applied to four novel devices: a solid state ion selective nitrate sensor, an ssDNA based mercury aptasensor, a low cost protein sensor, and a long lasting organic thin film transistor (OTFT). Many experimental studies on parameter combinations were conducted during the development of the above devices. The results showed that the ion selective nitrate sensor displayed a linear sensitivity range with a limit of detection of 2 ppm. The mercury sensor exhibited a linear correlation between the RCT values and the increasing concentrations of mercury. The protein printed circuit board (PCB) sensor provided a much simpler method of protein detection. Finally, the OTFT demonstrated a stable performance with mobility values for the linear and saturation regimes, and the threshold voltage. These devices have shown their value and reveal possibilities that could be pursued.
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Submitted 13 August, 2020;
originally announced August 2020.
