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TelePix -- A fast region of interest trigger and timing layer for the EUDET Telescopes
Authors:
Heiko Augustin,
Sebastian Dittmeier,
Jan Hammerich,
Adrian Herkert,
Lennart Huth,
David Immig,
Ivan Perić,
André Schöning,
Adriana Simancas,
Marcel Stanitzki,
Benjamin Weinläder
Abstract:
Test beam facilities are essential to study the response of novel detectors to particles. At the DESY II Test Beam facility, users can test their detectors with an electron beam with a momentum from 1-6 GeV. To track the beam particles, EUDET-style telescopes are provided in each beam area. They provide excellent spatial resolution, but the time resolution is limited by the rolling shutter archite…
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Test beam facilities are essential to study the response of novel detectors to particles. At the DESY II Test Beam facility, users can test their detectors with an electron beam with a momentum from 1-6 GeV. To track the beam particles, EUDET-style telescopes are provided in each beam area. They provide excellent spatial resolution, but the time resolution is limited by the rolling shutter architecture to a precision of approximately 230 $μ$s. Since the demand on particle rates -- and hence track multiplicities -- is increasing timing is becoming more relevant. DESY foresees several upgrades of the telescopes. TelePix is an upgrade project to provide track timestam** with a precision of better than 5 ns and a configurable region of interest to trigger the telescope readout. Small scale prototypes have been characterised in laboratory and test beam measurements. Laboratory tests with an injection corresponding to 2300 electrons show a S/N of above 20. Test beam characterization shows efficiencies of above 99% over a threshold range of more than 100 mV and time resolutions of 2.4 ns at low noise rates.
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Submitted 20 December, 2022;
originally announced December 2022.
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A Beam Monitor for Ion Beam Therapy based on HV-CMOS Pixel Detectors
Authors:
Matthias Balzer,
Alexander Dierlamm,
Felix Ehrler,
Ulrich Husemann,
Roland Koppenhöfer,
Ivan Perić,
Martin Pittermann,
Bogdan Topko,
Alena Weber,
Stephan Brons,
Jürgen Debus,
Nicole Grau,
Thomas Hansmann,
Oliver Jäkel,
Sebastian Klüter,
Jakob Naumann
Abstract:
Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation is the distinct peak in the depth dependent energy deposition, which can be exploited to accurately deposit dose in the tumor cells. To guarantee this, high accu…
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Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation is the distinct peak in the depth dependent energy deposition, which can be exploited to accurately deposit dose in the tumor cells. To guarantee this, high accuracy of monitoring and control of the particle beam is of utmost importance. Before the particle beam enters the patient, it traverses a monitoring system which has to give fast feedback to the beam control system on position and dose rate of the beam while minimally interacting with the beam. The multi-wire chambers mostly used as beam position monitor have their limitations when fast response time is required (drift time). Future developments like MRI-guided ion beam therapy pose additional challenges for the beam monitoring system like tolerance of magnetic fields and acoustic noise (vibrations). Solid-state detectors promise to overcome these limitations and the higher resolution they offer can create additional benefits. This article presents the evaluation of an HV-CMOS detector for beam monitoring, provides results from feasibility studies in a therapeutic beam and summarizes the concepts towards the final large-scale assembly and readout system.
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Submitted 11 November, 2022;
originally announced November 2022.
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Upgrading the Beam Telescopes at the DESY II Test Beam Facility
Authors:
H. Augustin,
R. Diener,
S. Dittmeier,
P. M. Freeman,
J. Hammerich,
A. Herkert,
L. Huth,
D. Immig,
U. Krämer,
N. Meyners,
I. Perić,
O. Schäfer,
A. Schöning,
A. Simancas,
M. Stanitzki,
D. Stuart,
B. Weinläder
Abstract:
The DESY II Test Beam Facility is a key infrastructure for modern high energy physics detector development, providing particles with a small momentum spread in a range from 1 to 6 GeV to user groups e.g. from the LHC experiments and Belle II as well as generic detector R&D. Beam telescopes are provided in all three test beam areas as precise tracking reference without time stam**, with triggered…
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The DESY II Test Beam Facility is a key infrastructure for modern high energy physics detector development, providing particles with a small momentum spread in a range from 1 to 6 GeV to user groups e.g. from the LHC experiments and Belle II as well as generic detector R&D. Beam telescopes are provided in all three test beam areas as precise tracking reference without time stam**, with triggered readout and a readout time of > 115 $μ$s. If the highest available rates are used, multiple particles are traversing the telescopes within one readout frame, thus creating ambiguities that cannot be resolved without additional timing layers. Several upgrades are currently investigated and tested: Firstly, a fast monolithic pixel sensor, the TelePix, to provide precise track timing and triggering on a region of interest is proposed to overcome this limitation. The TelePix is a 180 nm HV-CMOS sensor that has been developed jointly by DESY, KIT and the University of Heidelberg and designed at KIT. In this publication, the performance evaluation is presented: The difference between two amplifier designs is evaluated. A high hit detection efficiency of above 99.9 % combined with a time resolution of below 4 ns at negligible pixel noise rates is determined. Finally, the digital hit output to provide region of interest triggering is evaluated and shows a short absolute delay with respect to a traditional trigger scintillator as well as an excellent time resolution. Secondly, a fast LGAD plane has been proposed to provide a time resolution of a few 10 ps, which is foreseen to drastically improve the timing performance of the telescope. Time resolutions of below 70 ps have been determined in collaboration with the University of California, Santa Barbara.
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Submitted 23 August, 2022;
originally announced August 2022.
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X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide
Authors:
Fabricio Alcalde Bessia,
José Lipovetzky,
Ivan Perić
Abstract:
This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chi…
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This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chip, BUSARD-A, takes advantage of this buried diffusion as an ionizing particle sensor. It includes a small array of 13$\times$13 pixels, with a pitch of $80\,μ$m, and each pixel has one buried diffusion with a charge amplifier, discriminator with offset tuning and digital processing. The detector has several operation modes including particle counting and Time-over-Threshold (ToT). An initial X-ray characterization of the detector was carried out, obtaining several pulse height and ToT spectra, which then were used to perform the energy calibration of the device. The Molybdenum $\mathbf{K_α}$ emission was measured with a standard deviation of $127\,e^{-}$ of ENC by using the analog pulse output, and with $276\,e^{-}$ of ENC by using the ToT digital output. The resolution in ToT mode is dominated by the pixel-to-pixel variation.
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Submitted 6 December, 2021;
originally announced December 2021.
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The Mu3e experiment: Toward the construction of an HV-MAPS vertex detector
Authors:
Thomas Rudzki,
Heiko Augustin,
Marin Deflorin,
Sebastian Dittmeier,
Florian Frauen,
David Maximilian Immig,
Dohun Kim,
Frank Meier Aeschbacher,
Annie Meneses González,
Marius Menzel,
Ivan Perić,
Sebastian Preuß,
André Schöning,
Luigi Vigani,
Alena Weber,
Benjamin Weinläder
Abstract:
The Mu3e experiment searches for the lepton flavor violating decay $μ^+~\rightarrow~e^+~e^+~e^-$ with an ultimate aimed sensitivity of 1 event in $10^{16}$ decays. This goal can only be achieved by reducing the material budget per tracking layer to $X/X_0 \approx 0.1 \%$. High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) which are thinned to $50\ μm$ serve as sensors. Gaseous helium is chosen…
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The Mu3e experiment searches for the lepton flavor violating decay $μ^+~\rightarrow~e^+~e^+~e^-$ with an ultimate aimed sensitivity of 1 event in $10^{16}$ decays. This goal can only be achieved by reducing the material budget per tracking layer to $X/X_0 \approx 0.1 \%$. High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) which are thinned to $50\ μm$ serve as sensors. Gaseous helium is chosen as coolant.
Results of recent studies related to the sensor prototypes, the helium cooling, and module prototy** are presented. The recent chip submission MuPix10 has proven its functionality regarding efficiency and time resolution. The helium cooling system for the inner tracker could be verified using a full-scale prototype. A complete prototype equipped with MuPix10 chips will be tested inside the Mu3e magnet in summer 2021.
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Submitted 7 June, 2021;
originally announced June 2021.
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MuPix10: First Results from the Final Design
Authors:
Heiko Augustin,
Niklaus Berger,
Sebastian Dittmeier,
David Maximilian Immig,
Dohun Kim,
Lukas Mandok,
Annie Meneses Gonzalez,
Marius Menzel,
Lars Olivier Sebastian Noehte,
Ivan Perić,
Alexander Schmidt,
André Schöning,
Luigi Vigani,
Alena Weber,
Benjamin Weinläder
Abstract:
Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{μm}^2$. Hits are read out u…
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Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{μm}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.
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Submitted 11 December, 2020; v1 submitted 10 December, 2020;
originally announced December 2020.
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Technical design of the phase I Mu3e experiment
Authors:
K. Arndt,
H. Augustin,
P. Baesso,
N. Berger,
F. Berg,
C. Betancourt,
D. Bortoletto,
A. Bravar,
K. Briggl,
D. vom Bruch,
A. Buonaura,
F. Cadoux,
C. Chavez Barajas,
H. Chen,
K. Clark,
P. Cooke,
S. Corrodi,
A. Damyanova,
Y. Demets,
S. Dittmeier,
P. Eckert,
F. Ehrler,
D. Fahrni,
S. Gagneur,
L. Gerritzen
, et al. (80 additional authors not shown)
Abstract:
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $μ\rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of $2\cdot 10^{-15}$. We present an overview of all aspects of the technical design and expected performance of the p…
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The Mu3e experiment aims to find or exclude the lepton flavour violating decay $μ\rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of $2\cdot 10^{-15}$. We present an overview of all aspects of the technical design and expected performance of the phase~I Mu3e detector. The high rate of up to $10^{8}$ muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements.
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Submitted 26 August, 2021; v1 submitted 24 September, 2020;
originally announced September 2020.
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MuPix and ATLASPix -- Architectures and Results
Authors:
A. Schöning,
J. Anders,
H. Augustin,
M. Benoit,
N. Berger,
S. Dittmeier,
F. Ehrler,
A. Fehr,
T. Golling,
S. Gonzalez Sevilla,
J. Hammerich,
A. Herkert,
L. Huth,
G. Iacobucci,
D. Immig,
M. Kiehn,
J. Kröger,
F. Meier,
A. Meneses Gonzalez,
A. Miucci,
L. O. S. Noehte,
I. Peric,
M. Prathapan,
T. Rudzki,
R. Schimassek
, et al. (7 additional authors not shown)
Abstract:
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being dev…
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High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being developed for LHC applications with a triggered readout. Both variants have a fully monolithic design including state machines, clock circuitries and serial drivers. Several prototypes and design variants were characterised in the lab and in testbeam campaigns to measure efficiencies, noise, time resolution and radiation tolerance. Results from recent MuPix and ATLASPix prototypes are presented and prospects for future improvements are discussed.
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Submitted 17 February, 2020;
originally announced February 2020.
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Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC
Authors:
M. Barbero,
P. Barrillon,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
J. Dingfelder,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
F. Hügging,
H. Krüger,
K. Moustakas,
A. Ouraou,
P. Pangaud,
I. Peric,
D-L. Pohl,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.
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Submitted 25 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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Performance of the large scale HV-CMOS pixel sensor MuPix8
Authors:
H. Augustin,
N. Berger,
C. Blattgerste,
S. Dittmeier,
F. Ehrler,
C Grzesik,
J. Hammerich. A. Herkert,
L. Huth,
D. Immig,
A. Kozlinskiy,
M. Köppel,
J. Kröger,
F. Meier,
A. Meneses Gonzales,
M. Müller,
L. Noehte,
I. Perić,
M. Prathapan,
T. Rudzki,
R. Schimassek,
A. Schöning,
I. Sorokin,
F. Stieler,
A. Tyukin,
T. Wagner
, et al. (4 additional authors not shown)
Abstract:
The Mu3e experiment is searching for the charged lepton flavour violating decay $ μ^+\rightarrow e^+ e^- e^+ $, aiming for an ultimate sensitivity of one in $10^{16}$ decays. In an environment of up to $10^9$ muon decays per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers o…
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The Mu3e experiment is searching for the charged lepton flavour violating decay $ μ^+\rightarrow e^+ e^- e^+ $, aiming for an ultimate sensitivity of one in $10^{16}$ decays. In an environment of up to $10^9$ muon decays per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers of $50\, μ\text{m}$ thin High Voltage Monolithic Active Pixel Sensors (HV-MAPS) placed in a $1\,\text{T}$ magnetic field. The measurement of the trajectories of the decay particles allows for a precise vertex and momentum reconstruction. Additional layers of fast scintillating fibre and tile detectors provide sub-nanosecond time resolution. The MuPix8 chip is the first large scale prototype, proving the scalability of the HV-MAPS technology. It is produced in the AMS aH18 $180\, \text{nm}$ HV-CMOS process. It consists of three sub-matrices, each providing an untriggered datastream of more than $10\,\text{MHits}/\text{s}$. The latest results from laboratory and testbeam characterisation are presented, showing an excellent performance with efficiencies $>99.6\,\text{\%}$ and a time resolution better than $10\, \text{ns}$ achieved with time walk correction.
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Submitted 22 May, 2019;
originally announced May 2019.
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Detector Technologies for CLIC
Authors:
A. C. Abusleme Hoffman,
G. Parès,
T. Fritzsch,
M. Rothermund,
H. Jansen,
K. Krüger,
F. Sefkow,
A. Velyka,
J. Schwandt,
I. Perić,
L. Emberger,
C. Graf,
A. Macchiolo,
F. Simon,
M. Szalay,
N. van der Kolk,
H. Abramowicz,
Y. Benhammou,
O. Borysov,
M. Borysova,
A. Joffe,
S. Kananov,
A. Levy,
I. Levy,
G. Eigen
, et al. (107 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Stan…
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The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.
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Submitted 7 May, 2019;
originally announced May 2019.
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Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation
Authors:
D M S Sultan,
Sergio Gonzalez Sevilla,
Didier Ferrere,
Giuseppe Iacobucci,
Ettore Zaffaroni,
Winnie Wong,
Mateus Vicente Barrero Pinto,
Moritz Kiehn,
Mridula Prathapan,
Felix Ehrler,
Ivan Peric,
Antonio Miucci,
John Kenneth Anders,
Armin Fehr,
Michele Weber,
Andre Schoening,
Adrian Herkert,
Heiko Augustin,
Mathieu Benoit
Abstract:
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor te…
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In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trap** effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective do** concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.
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Submitted 28 May, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
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Tracking performance and simulation of capacitively coupled pixel detectors for the CLIC vertex detector
Authors:
N. Alipour~Tehrani,
M. Benoit,
M. Buckland,
D. Dannheim,
A. Fiergolski,
S. Green,
D. Hynds,
I. Kremastiotis,
S. Kulis,
M. Munker,
A. Nürnberg,
I. Peric,
M. Petric,
E. Sicking,
M. Vicente
Abstract:
In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performa…
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In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6 $μ$m. The measured charge collection characterstics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current-voltage characteristics of the device, and have been further used to make predictions about future device designs.
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Submitted 28 January, 2019;
originally announced January 2019.
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The Compact Linear Collider (CLIC) - 2018 Summary Report
Authors:
The CLIC,
CLICdp collaborations,
:,
T. K. Charles,
P. J. Giansiracusa,
T. G. Lucas,
R. P. Rassool,
M. Volpi,
C. Balazs,
K. Afanaciev,
V. Makarenko,
A. Patapenka,
I. Zhuk,
C. Collette,
M. J. Boland,
A. C. Abusleme Hoffman,
M. A. Diaz,
F. Garay,
Y. Chi,
X. He,
G. Pei,
S. Pei,
G. Shu,
X. Wang,
J. Zhang
, et al. (671 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the…
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The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the detector. CLIC is foreseen to be built and operated in stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. CLIC uses a two-beam acceleration scheme, in which 12 GHz accelerating structures are powered via a high-current drive beam. For the first stage, an alternative with X-band klystron powering is also considered. CLIC accelerator optimisation, technical developments and system tests have resulted in an increased energy efficiency (power around 170 MW) for the 380 GeV stage, together with a reduced cost estimate at the level of 6 billion CHF. The detector concept has been refined using improved software tools. Significant progress has been made on detector technology developments for the tracking and calorimetry systems. A wide range of CLIC physics studies has been conducted, both through full detector simulations and parametric studies, together providing a broad overview of the CLIC physics potential. Each of the three energy stages adds cornerstones of the full CLIC physics programme, such as Higgs width and couplings, top-quark properties, Higgs self-coupling, direct searches, and many precision electroweak measurements. The interpretation of the combined results gives crucial and accurate insight into new physics, largely complementary to LHC and HL-LHC. The construction of the first CLIC energy stage could start by 2026. First beams would be available by 2035, marking the beginning of a broad CLIC physics programme spanning 25-30 years.
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Submitted 6 May, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
Authors:
S. Terzo,
M. Benoit,
E. Cavallaro,
R. Casanova,
F. A. Di Bello,
F. Förster,
S. Grinstein,
G. Iacobucci,
I. Perić,
C. Puigdengoles,
M. Vicente Barrero Pinto,
E. Vilella Figueras
Abstract:
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC.…
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Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut für Technologie (KIT), Institut de Física d'Altes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$Ω$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V.
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Submitted 30 January, 2019; v1 submitted 19 November, 2018;
originally announced November 2018.
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A novel detector system for KATRIN to search for keV-scale sterile neutrinos
Authors:
Susanne Mertens,
Antonio Alborini,
Konrad Altenmüller,
Tobias Bode,
Luca Bombelli,
Tim Brunst,
Marco Carminati,
David Fink,
Carlo Fiorini,
Thibaut Houdy,
Anton Huber,
Marc Korzeczek,
Thierry Lasserre,
Peter Lechner,
Michele Manotti,
Ivan Peric,
David C. Radford,
Daniel Siegmann,
Martin Slezák,
Kathrin Valerius,
Joachim Wolf,
Sascha Wüstling
Abstract:
Sterile neutrinos are a minimal extension of the Standard Model of Particle Physics. If their mass is in the kilo-electron-volt regime, they are viable dark matter candidates. One way to search for sterile neutrinos in a laboratory-based experiment is via tritium-beta decay, where the new neutrino mass eigenstate would manifest itself as a kink-like distortion of the $β$-decay spectrum. The object…
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Sterile neutrinos are a minimal extension of the Standard Model of Particle Physics. If their mass is in the kilo-electron-volt regime, they are viable dark matter candidates. One way to search for sterile neutrinos in a laboratory-based experiment is via tritium-beta decay, where the new neutrino mass eigenstate would manifest itself as a kink-like distortion of the $β$-decay spectrum. The objective of the TRISTAN project is to extend the KATRIN setup with a new multi-pixel silicon drift detector system to search for a keV-scale sterile neutrino signal. In this paper we describe the requirements of such a new detector, and present first characterization measurement results obtained with a 7-pixel prototype system.
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Submitted 15 October, 2018;
originally announced October 2018.
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
Authors:
John Anders,
Mathieu Benoit,
Saverio Braccini,
Raimon Casanova,
Hucheng Chen,
Kai Chen,
Francesco Armando di Bello,
Armin Fehr,
Didier Ferrere,
Dean Forshaw,
Tobias Golling,
Sergio Gonzalez-Sevilla,
Giuseppe Iacobucci,
Moritz Kiehn,
Francesco Lanni,
Hongbin Liu,
Lingxin Meng,
Claudia Merlassino,
Antonio Miucci,
Marzio Nessi,
Ivan Perić,
Marco Rimoldi,
D M S Sultan,
Mateus Vincente Barreto Pinto,
Eva Vilella
, et al. (4 additional authors not shown)
Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
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Submitted 25 July, 2018;
originally announced July 2018.
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Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
Authors:
Moritz Kiehn,
Francesco Armando Di Bello,
Mathieu Benoit,
Raimon Casanova Mohr,
Hucheng Chen,
Kai Chen,
Sultan D. M. S.,
Felix Ehrler,
Didier Ferrere,
Dylan Frizell,
Sergio Gonzalez Sevilla,
Giuseppe Iacobucci,
Francesco Lanni,
Hongbin Liu,
Claudia Merlassino,
Jessica Metcalfe,
Antonio Miucci,
Ivan Peric,
Mridula Prathapan,
Rudolf Schimassek,
Mateus Vicente Barreto,
Thomas Weston,
Eva Vilella Figueras,
Alena Weber,
Michele Weber
, et al. (5 additional authors not shown)
Abstract:
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achie…
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Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}~\text{n}_\text{eq}/\text{cm}^2$ and detection efficiencies above $99.5~\%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
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Submitted 8 June, 2020; v1 submitted 16 July, 2018;
originally announced July 2018.
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Efficiency and timing performance of the MuPix7 high-voltage monolithic active pixel sensor
Authors:
Heiko Augustin,
Niklaus Berger,
Sebastian Dittmeier,
Carsten Grzesik,
Jan Hammerich,
Ulrich Hartenstein,
Qinhua Huang,
Lennart Huth,
David Maximilian Immig,
Moritz Kiehn,
Alexandr Kozlinskiy,
Frank Meier Aeschbacher,
Annie Meneses González,
Ivan Perić,
Ann-Kathrin Perrevoort,
André Schöning,
Shruti Shrestha,
Dorothea vom Bruch,
Frederik Wauters,
Dirk Wiedner
Abstract:
The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link. Using data taken at the DESY electron test beam, we demonstrate an efficiency of 99.3% and a time resolution of 14 ns. The efficiency and time resolution are studied with sub-pixel resol…
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The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link. Using data taken at the DESY electron test beam, we demonstrate an efficiency of 99.3% and a time resolution of 14 ns. The efficiency and time resolution are studied with sub-pixel resolution and reproduced in simulations.
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Submitted 30 June, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
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The P2 Experiment - A future high-precision measurement of the electroweak mixing angle at low momentum transfer
Authors:
Dominik Becker,
Razvan Bucoveanu,
Carsten Grzesik,
Ruth Kempf,
Kathrin Imai,
Matthias Molitor,
Alexey Tyukin,
Marco Zimmermann,
David Armstrong,
Kurt Aulenbacher,
Sebastian Baunack,
Rakitha Beminiwattha,
Niklaus Berger,
Peter Bernhard,
Andrea Brogna,
Luigi Capozza,
Silviu Covrig Dusa,
Wouter Deconinck,
Jürgen Diefenbach,
Jens Erler,
Ciprian Gal,
Boris Gläser,
Boxing Gou,
Wolfgang Gradl,
Michael Gericke
, et al. (20 additional authors not shown)
Abstract:
This article describes the future P2 parity-violating electron scattering facility at the upcoming MESA accelerator in Mainz. The physics program of the facility comprises indirect, high precision search for physics beyond the Standard Model, measurement of the neutron distribution in nuclear physics, single-spin asymmetries stemming from two-photon exchange and a possible future extension to the…
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This article describes the future P2 parity-violating electron scattering facility at the upcoming MESA accelerator in Mainz. The physics program of the facility comprises indirect, high precision search for physics beyond the Standard Model, measurement of the neutron distribution in nuclear physics, single-spin asymmetries stemming from two-photon exchange and a possible future extension to the measurement of hadronic parity violation. The first measurement of the P2 experiment aims for a high precision determination of the weak mixing angle to a precision of 0.14% at a four-momentum transfer of Q^2 = 4.5 10^{-3} GeV^2. The accuracy is comparable to existing measurements at the Z pole. It comprises a sensitive test of the standard model up to a mass scale of 50 TeV, extendable to 70 TeV. This requires a measurement of the parity violating cross section asymmetry -39.94 10^{-9} in the elastic electron-proton scattering with a total accuracy of 0.56 10^-9 (1.4 %) in 10,000 h of 150 \micro A polarized electron beam im**ing on a 60 cm liquid H_2 target allowing for an extraction of the weak charge of the proton which is directly connected to the weak mixing angle. Contributions from gamma Z-box graphs become small at the small beam energy of 155 MeV. The size of the asymmetry is the smallest asymmetry ever measured in electron scattering with an unprecedented goal for the accuracy. We report here on the conceptual design of the P2 spectrometer, its Cherenkov detectors, the integrating read-out electronics as well as the ultra-thin, fast tracking detectors. There has been substantial theory work done in preparation of the determination of the weak mixing angle. The further physics program in particle and nuclear physics is described as well.
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Submitted 14 March, 2018; v1 submitted 13 February, 2018;
originally announced February 2018.
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
Authors:
M. Benoit,
S. Braccini,
R. Casanova,
E. Cavallaro,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
D. Frizzell,
T. Golling,
S. Gonzalez-Sevilla,
S. Grinstein,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
J. Metcalfe,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Perić,
M. Rimoldi
, et al. (12 additional authors not shown)
Abstract:
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning fr…
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In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
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Submitted 3 December, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
Authors:
H. Augustin,
N. Berger,
S. Dittmeier,
J. Hammerich,
A. Herkert,
L. Huth,
D. Immig,
J. Kröger,
F. Meier,
I. Perić,
A. -K. Perrevoort,
A. Schöning,
D. vom Bruch,
D. Wiedner
Abstract:
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor…
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High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to $5.0\cdot10^{15}{\,\rm{n}_{\rm{eq}}/cm^2}$) and protons (up to $7.8\cdot 10^{15} \,\rm{protons}/cm^2$) and compare the performance with non-irradiated sensors. Efficiencies well above 90 % at noise rates below 200 Hz per pixel are measured. A time resolution better than 22 ns is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.
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Submitted 5 June, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
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Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector
Authors:
I. Kremastiotis,
R. Ballabriga,
M. Campbell,
D. Dannheim,
A. Fiergolski,
D. Hynds,
S. Kulis,
I. Peric
Abstract:
The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial $180$ nm HV-CMOS process and co…
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The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial $180$ nm HV-CMOS process and contains a matrix of $128\times128$ square pixels with $25$ $μ$m pitch. First prototypes have been produced with a standard resistivity of $\sim20$ $Ω$cm for the substrate and tested in standalone mode. The results show a rise time of $\sim20$ ns, charge gain of $190$ mV/ke$^{-}$ and $\sim40$ e$^{-}$ RMS noise for a power consumption of $4.8$ $μ$W/pixel. The main design aspects, as well as standalone measurement results, are presented.
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Submitted 8 August, 2017; v1 submitted 14 June, 2017;
originally announced June 2017.
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Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments
Authors:
Stefano Terzo,
Emanuele Cavallaro,
Raimon Casanova,
Francesco Di Bello,
Fabian Förster,
Sebastian Grinstein,
Ivan Períc,
Carles Puigdengoles,
Branislav Ristic,
Mateus Vicente Barrero Pinto,
Eva Vilella
Abstract:
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detec…
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An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. For this purpose the H35DEMO, a large area HV-CMOS demonstrator chip, was designed by KIT, IFAE and University of Liverpool, and produced in AMS 350 nm CMOS technology. It consists of four pixel matrices and additional test structures. Two of the matrices include amplifiers and discriminator stages and are thus designed to be operated as monolithic detectors. In these devices the signal is mainly produced by charge drift in a small depleted volume obtained by applying a bias voltage of the order of 100 V. Moreover, to enhance the radiation hardness of the chip, this technology allows to enclose the electronics in the same deep N-WELLs which are also used as collecting electrodes. In this contribution the characterisation of H35DEMO chips and results of the very first beam test measurements of the monolithic CMOS matrices with high energetic pions at CERN SPS will be presented.
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Submitted 15 May, 2017;
originally announced May 2017.
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Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment
Authors:
Toko Hirono,
Marlon Barbero,
Patrick Breugnon,
Stéphanie Godiot,
Tomasz Hemperek,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Perić,
David-Leon Pohl,
Alexandre Rozanov,
Piotr Rymaszewski,
Norbert Wermes
Abstract:
Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS…
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Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 kΩcm that was thinned to 100 μm. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively.
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Submitted 9 December, 2016;
originally announced December 2016.
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The MuPix Telescope: A Thin, high Rate Tracking Telescope
Authors:
H. Augustin,
N. Berger,
S. Dittmeier,
C. Grzesik,
J. Hammerich,
Q. Huang,
L. Huth,
M. Kiehn,
A. Kozlinskiy,
F. Meier,
I. Perić,
A. -K. Perrevoort,
A. Schöning,
D. vom Bruch,
F. Wauters,
D. Wiedner
Abstract:
The MuPix Telescope is a particle tracking telescope, optimized for tracking low momentum particles and high rates. It is based on the novel High-Voltage Monolithic Active Pixel Sensors (HV-MAPS), designed for the Mu3e tracking detector. The telescope represents a first application of the HV-MAPS technology and also serves as test bed of the Mu3e readout chain. The telescope consists of up to eigh…
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The MuPix Telescope is a particle tracking telescope, optimized for tracking low momentum particles and high rates. It is based on the novel High-Voltage Monolithic Active Pixel Sensors (HV-MAPS), designed for the Mu3e tracking detector. The telescope represents a first application of the HV-MAPS technology and also serves as test bed of the Mu3e readout chain. The telescope consists of up to eight layers of the newest prototypes, the MuPix7 sensors, which send data self-triggered via fast serial links to FPGAs, where the data is time-ordered and sent to the PC. A particle hit rate of 1 MHz per layer could be processed. Online tracking is performed with a subset of the incoming data. The general concept of the telescope, chip architecture, readout concept and online reconstruction are described. The performance of the sensor and of the telescope during test beam measurements are presented.
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Submitted 9 November, 2016;
originally announced November 2016.
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
Authors:
M. Benoit,
S. Braccini,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber
, et al. (4 additional authors not shown)
Abstract:
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the am…
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HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\,$V. The sample irradiated to a fluence of $1\cdot 10^{15}$ n$_\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
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Submitted 28 November, 2017; v1 submitted 8 November, 2016;
originally announced November 2016.
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MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e
Authors:
H. Augustin,
N. Berger,
S. Dittmeier,
J. Hammerich,
U. Hartenstein,
Q. Huang,
L. Huth,
D. Immig,
A. Kozlinskiy,
F. Meier Aeschbacher,
I. Perić,
A. -K. Perrevoort,
A. Schöning,
S. Shrestha,
I. Sorokin,
A. Tyukin,
D. vom Bruch,
F. Wauters,
D. Wiedner,
M. Zimmermann
Abstract:
The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 μm. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 μm^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian…
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The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 μm. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 μm^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.
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Submitted 10 October, 2016; v1 submitted 7 October, 2016;
originally announced October 2016.
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Updated baseline for a staged Compact Linear Collider
Authors:
The CLIC,
CLICdp collaborations,
:,
M. J. Boland,
U. Felzmann,
P. J. Giansiracusa,
T. G. Lucas,
R. P. Rassool,
C. Balazs,
T. K. Charles,
K. Afanaciev,
I. Emeliantchik,
A. Ignatenko,
V. Makarenko,
N. Shumeiko,
A. Patapenka,
I. Zhuk,
A. C. Abusleme Hoffman,
M. A. Diaz Gutierrez,
M. Vogel Gonzalez,
Y. Chi,
X. He,
G. Pei,
S. Pei,
G. Shu
, et al. (493 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a multi-TeV high-luminosity linear e+e- collider under development. For an optimal exploitation of its physics potential, CLIC is foreseen to be built and operated in a staged approach with three centre-of-mass energy stages ranging from a few hundred GeV up to 3 TeV. The first stage will focus on precision Standard Model physics, in particular Higgs and top-q…
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The Compact Linear Collider (CLIC) is a multi-TeV high-luminosity linear e+e- collider under development. For an optimal exploitation of its physics potential, CLIC is foreseen to be built and operated in a staged approach with three centre-of-mass energy stages ranging from a few hundred GeV up to 3 TeV. The first stage will focus on precision Standard Model physics, in particular Higgs and top-quark measurements. Subsequent stages will focus on measurements of rare Higgs processes, as well as searches for new physics processes and precision measurements of new states, e.g. states previously discovered at LHC or at CLIC itself. In the 2012 CLIC Conceptual Design Report, a fully optimised 3 TeV collider was presented, while the proposed lower energy stages were not studied to the same level of detail. This report presents an updated baseline staging scenario for CLIC. The scenario is the result of a comprehensive study addressing the performance, cost and power of the CLIC accelerator complex as a function of centre-of-mass energy and it targets optimal physics output based on the current physics landscape. The optimised staging scenario foresees three main centre-of-mass energy stages at 380 GeV, 1.5 TeV and 3 TeV for a full CLIC programme spanning 22 years. For the first stage, an alternative to the CLIC drive beam scheme is presented in which the main linac power is produced using X-band klystrons.
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Submitted 27 March, 2017; v1 submitted 26 August, 2016;
originally announced August 2016.
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The MuPix System-on-Chip for the Mu3e Experiment
Authors:
Heiko Augustin,
Niklaus Berger,
Sebastian Dittmeier,
Carsten Grzesik,
Jan Hammerich,
Qinhua Huang,
Lennart Huth,
Moritz Kiehn,
Alexandr Kozlinskiy,
Frank Meier Aeschbacher,
Ivan Perić,
Ann-Kathrin Perrevoort,
André Schöning,
Shruti Shrestha,
Dorothea vom Bruch,
Frederik Wauters,
Dirk Wiedner
Abstract:
Mu3e is a novel experiment searching for charged lepton flavor violation in the rare decay $μ^+ \rightarrow e^+e^-e^+$. Decay vertex position, decay time and particle momenta have to be precisely measured in order to reject both accidental and physics background. A silicon pixel tracker based on $50\,μ$m thin high voltage monolithic active pixel sensors (HV-MAPS) in a 1 T solenoidal magnetic field…
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Mu3e is a novel experiment searching for charged lepton flavor violation in the rare decay $μ^+ \rightarrow e^+e^-e^+$. Decay vertex position, decay time and particle momenta have to be precisely measured in order to reject both accidental and physics background. A silicon pixel tracker based on $50\,μ$m thin high voltage monolithic active pixel sensors (HV-MAPS) in a 1 T solenoidal magnetic field provides precise vertex and momentum information. The MuPix chip combines pixel sensor cells with integrated analog electronics and a periphery with a complete digital readout. The MuPix7 is the first HV-MAPS prototype implementing all functionalities of the final sensor including a readout state machine and high speed serialization with 1.25 Gbit/s data output, allowing for a streaming readout in parallel to the data taking. The observed efficiency of the MuPix7 chip including the full readout system is $\geq99\%$ in a high rate test beam.
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Submitted 14 October, 2016; v1 submitted 29 March, 2016;
originally announced March 2016.
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Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade
Authors:
H. Liu,
M. Benoit,
H. Chen,
K. Chen,
F. A. Di Bello,
G. Iacobucci,
F. Lanni,
I. Peric,
B. Ristic,
M. Vicente Barreto Pinto,
W. Wu,
L. Xu,
G. **
Abstract:
High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes fi…
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High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in the testbeam of the HV-CMOS sensor CCPDv4 at CERN. Preliminary results have shown that the test system is very versatile. Further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.
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Submitted 17 October, 2016; v1 submitted 25 March, 2016;
originally announced March 2016.
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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Authors:
M. Benoit,
J. Bilbao de Mendizabal,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
F. Lanni,
H. Liu,
F. Meloni,
L. Meng,
A. Miucci,
D. Muenstermann,
M. Nessi,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber,
W. Wu,
L. Xu
Abstract:
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of track…
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Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
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Submitted 30 June, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.
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Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Patrick Breugnon,
Stépahnie Godiot,
Laura Gonella,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Peric,
Alexandre Rozanov,
Anqing Wang,
Norbert Wermes
Abstract:
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prot…
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The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
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Submitted 4 January, 2016;
originally announced January 2016.
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A Tracker for the Mu3e Experiment based on High-Voltage Monolithic Active Pixel Sensors
Authors:
Niklaus Berger,
Heiko Augustin,
Sebastian Bachmann,
Moritz Kiehn,
Ivan Perić,
Ann-Kathrin Perrevoort,
Raphael Philipp,
André Schöning,
Kevin Stumpf,
Dirk Wiedner,
Bernd Windelband,
Marco Zimmermann
Abstract:
The Mu3e experiment searches for the lepton flavour violating decay mu+ -> e+e-e+, aiming for a branching fraction sensitivity of 10^-16. This requires an excellent momentum resolution for low energy electrons, high rate capability and a large acceptance. In order to minimize multiple scattering, the amount of material has to be as small as possible. These challenges can be met with a tracker buil…
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The Mu3e experiment searches for the lepton flavour violating decay mu+ -> e+e-e+, aiming for a branching fraction sensitivity of 10^-16. This requires an excellent momentum resolution for low energy electrons, high rate capability and a large acceptance. In order to minimize multiple scattering, the amount of material has to be as small as possible. These challenges can be met with a tracker built from high-voltage monolithic active pixel sensors (HV-MAPS), which can be thinned to 50 um and which incorporate the complete read-out electronics on the sensor chip. To further minimise material, the sensors are supported by a mechanical structure built from 25 um thick Kapton foil and cooled with gaseous helium.
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Submitted 30 September, 2013;
originally announced September 2013.
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Research Proposal for an Experiment to Search for the Decay μ -> eee
Authors:
A. Blondel,
A. Bravar,
M. Pohl,
S. Bachmann,
N. Berger,
M. Kiehn,
A. Schöning,
D. Wiedner,
B. Windelband,
P. Eckert,
H. -C. Schultz-Coulon,
W. Shen,
P. Fischer,
I. Perić,
M. Hildebrandt,
P. -R. Kettle,
A. Papa,
S. Ritt,
A. Stoykov,
G. Dissertori,
C. Grab,
R. Wallny,
R. Gredig,
P. Robmann,
U. Straumann
Abstract:
We propose an experiment (Mu3e) to search for the lepton flavour violating decay mu+ -> e+e-e+. We aim for an ultimate sensitivity of one in 10^16 mu-decays, four orders of magnitude better than previous searches. This sensitivity is made possible by exploiting modern silicon pixel detectors providing high spatial resolution and hodoscopes using scintillating fibres and tiles providing precise tim…
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We propose an experiment (Mu3e) to search for the lepton flavour violating decay mu+ -> e+e-e+. We aim for an ultimate sensitivity of one in 10^16 mu-decays, four orders of magnitude better than previous searches. This sensitivity is made possible by exploiting modern silicon pixel detectors providing high spatial resolution and hodoscopes using scintillating fibres and tiles providing precise timing information at high particle rates.
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Submitted 25 January, 2013;
originally announced January 2013.
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
Authors:
O. Alonso,
R. Casanova,
A. Dieguez,
J. Dingfelder,
T. Hemperek,
T. Kishishita amd T. Kleinohl,
M. Koch,
H. Krueger,
M. Lemarenko,
F. Luetticke,
C. Marinas,
M. Schnell,
N. Wermes,
A. Campbell,
T. Ferber,
C. Kleinwort,
C. Niebuhr,
Y. Soloviev,
M. Steder,
R. Volkenborn,
S. Yaschenko,
P. Fischer,
C. Kreidl,
I. Peric,
J. Knopf
, et al. (62 additional authors not shown)
Abstract:
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a senso…
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.
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Submitted 10 December, 2012;
originally announced December 2012.
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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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Belle II Technical Design Report
Authors:
T. Abe,
I. Adachi,
K. Adamczyk,
S. Ahn,
H. Aihara,
K. Akai,
M. Aloi,
L. Andricek,
K. Aoki,
Y. Arai,
A. Arefiev,
K. Arinstein,
Y. Arita,
D. M. Asner,
V. Aulchenko,
T. Aushev,
T. Aziz,
A. M. Bakich,
V. Balagura,
Y. Ban,
E. Barberio,
T. Barvich,
K. Belous,
T. Bergauer,
V. Bhardwaj
, et al. (387 additional authors not shown)
Abstract:
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been pr…
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The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.
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Submitted 1 November, 2010;
originally announced November 2010.
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CIX - A Detector for Spectral Enhanced X-ray Imaging by Simultaneous Counting and Integrating
Authors:
H. Krüger,
J. Fink,
E. Kraft,
N. Wermes,
P. Fischer,
I. Peric,
C. Herrmann,
M. Overdick,
W. Rütten
Abstract:
A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different direct converting sensor materials (CdZnTe and CdTe) bump bonded to its 8x8 pixel matrix. Photon counting devices give excellent results for low to medium X-ray f…
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A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different direct converting sensor materials (CdZnTe and CdTe) bump bonded to its 8x8 pixel matrix. Photon counting devices give excellent results for low to medium X-ray fluxes but saturate at high rates while charge integration allows the detection of very high fluxes but is limited at low rates by the finite signal to noise ratio. The combination of both signal processing concepts therefore extends the resolvable dynamic range of the X-ray detector. In addition, for a large region of the dynamic range, where counter and integrator operate simultaneously, the mean energy of the detected X-ray spectrum can be calculated. This spectral information can be used to enhance the contrast of the X-ray image. The advantages of the counting and integrating signal processing concept and the performance of the imaging system will be reviewed. The properties of the system with respect to dynamic range and sensor response will be discussed and examples of imaging with additional spectral information will be presented.
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Submitted 15 February, 2008;
originally announced February 2008.
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Status of a DEPFET pixel system for the ILC vertex detector
Authors:
M. Trimpl,
M. Koch,
R. Kohrs,
H. Krueger,
P. Lodomez,
L. Reuen,
C. Sandow,
E. v. Toerne,
J. J. Velthuis,
N. Wermes,
L. Andricek,
H. G. Moser,
R. H. Richter,
G. Lutz,
F. Giesen,
P. Fischer,
I. Peric
Abstract:
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micro…
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We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100 e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6 to 40keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.
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Submitted 6 December, 2006; v1 submitted 13 June, 2006;
originally announced June 2006.
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New Results on DEPFET Pixel Detectors for Radiation Imaging and High Energy Particle Detection
Authors:
N. Wermes,
L. Andricek,
P. Fischer,
M. Haerter,
K. Heinzinger,
S. Herrmann,
M. Karagounis,
R. Kohrs,
H. Krueger,
G. Lutz,
P. Lechner,
I. Peric,
M. Porro,
R. H. Richter,
G. Schaller,
M. Schnecke-Radau,
F. Schopper,
H. Soltau,
L. Strueder,
M. Trimpl,
J. Ulrici,
J. Treis
Abstract:
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full DEPFET pixel matrices have been built and operated for autoradiographical imaging with imaging resolutions of 4.3 +- 0.8 um at 22 keV. For applications in low…
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DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full DEPFET pixel matrices have been built and operated for autoradiographical imaging with imaging resolutions of 4.3 +- 0.8 um at 22 keV. For applications in low energy X-ray astronomy the high energy resolution of DEPFET detectors is attractive. For particle physics, DEPFET pixels are interesting as low material detectors with high spatial resolution. For a Linear Collider detector the readout must be very fast. New readout chips have been designed and produced for the development of a DEPFET module for a pixel detector at the proposed TESLA collider (520x4000 pixels) with 50 MHz line rate and 25 kHz frame rate. The circuitry contains current memory cells and current hit scanners for fast pedestal subtraction and sparsified readout. The imaging performance of DEPFET devices as well as present achievements towards a DEPFET vertex detector for a Linear Collider are presented.
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Submitted 22 December, 2003;
originally announced December 2003.